My Inquiry
My Account
onsemi NRVTSM260ET1G
- Part No.:
- NRVTSM260ET1G
- Manufacturer:
- onsemi
- Category:
- Single Diodes
- Package:
- DO-216AA
- Datasheet:
-
NRVTSM260ET1G.pdf
- Description:
- DIODE SCHOTTKY 60V 2A POWERMITE
- Quantity:
- Payment:
- Shipping:
Inventory:4,007
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
NRVTSM260ET1G from onsemi is a surface-mount trench Schottky power rectifier in Powermite (Case 457) package, rated for 2.0 A average forward current and 60 V peak repetitive reverse voltage, with low 0.55 V forward voltage at 1 A/25°C and AEC-Q101 qualification for automotive applications.
For engineers reviewing the NRVTSM260ET1G datasheet, pinout, applications, or equivalent options, key selection criteria include its 8.6°C/W junction-to-lead thermal resistance, 50 A non-repetitive surge capability, low-profile 1.1 mm height, and fine-lithography trench Schottky architecture enabling high efficiency in DC-DC converters and reverse battery protection circuits.
Technical Context
This device uses trench-based Schottky technology to achieve low forward voltage and low leakage simultaneously - a trade-off traditionally constrained in planar Schottky diodes. Its thermal design leverages an exposed cathode as a direct heat sink, supported by validated 8.6°C/W RJL when mounted on a 700 mm² copper pad.
The NRVTSM260ET1G operates across −55°C to +175°C junction temperature range and maintains stable switching performance up to 175°C, with fast recovery characteristics confirmed by square-wave 20 kHz testing and low stored charge behavior typical of Schottky rectifiers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 60 V - Maximum reverse blocking voltage without breakdown; enables use in 48 V system inputs and 36 V nominal DC-DC stages. |
| IO (TL = 162°C) | 2.0 A - Continuous forward current rating under defined thermal load condition; defines usable output current in compact power supplies. |
| VF @ 1 A, 25°C | 0.55 V - Low conduction loss improves efficiency and reduces heat generation in high-frequency switching paths. |
| IFSM | 50 A - Surge withstand capability supports robustness against inrush and fault transients in automotive and industrial power rails. |
| RJL | 8.6°C/W - Junction-to-lead thermal resistance measured on 700 mm² copper pad; enables accurate thermal modeling for PCB layout. |
| TJ Range | −55°C to +175°C - Full automotive-grade operating range; qualified per AEC-Q101 for under-hood and infotainment power systems. |
Pinout & Package
NRVTSM260ET1G is housed in Powermite (JEDEC D0-216AA, Case 457) - a low-profile, surface-mount package with exposed cathode pad for thermal dissipation and two terminals: Pin 1 (Anode), Pin 2 (Cathode).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Anode | Input terminal for forward conduction path; connects to input rail or switch node in buck/flyback topologies. |
| Pin 2 | Cathode | Output terminal and thermally conductive exposed pad; must be soldered to large copper area for optimal thermal performance. |
Key Features
| Feature | Design Value |
|---|---|
| Low-profile package | 1.1 mm max height - enables ultra-thin power adapter and display backlight designs where Z-height is constrained. |
| Trench Schottky technology | Simultaneous 0.55 V VF and 12 μA IR at 25°C - achieves higher efficiency than planar Schottky alternatives without sacrificing leakage. |
| Exposed cathode thermal path | 8.6°C/W RJL - allows >75% of heat to transfer directly from die to PCB, reducing reliance on airflow or heatsinks. |
| AEC-Q101 qualification | Validated for automotive applications including reverse battery protection and ECU power rails - includes stress testing for temperature cycling, HTRB, and HTGB. |
Applications
| Switching Power Supplies | Reverse Battery Protection |
|---|---|
Use Scenario: Used in secondary-side rectification of AC-DC adapters and flat-panel display power supplies operating at 100–500 kHz. IC Role / Device Role / Timing Role: Schottky rectifier replacing conventional PN diodes to reduce conduction loss and improve light-load efficiency. Use Value: 0.55 V VF at 1 A lowers power loss by ~40% vs. standard 0.9 V diodes, directly improving 65 W adapter efficiency by 1.2–1.8%. | Use Scenario: Placed in series with vehicle battery input to prevent damage during accidental reverse polarity connection. IC Role / Device Role / Timing Role: Unidirectional current gate protecting downstream DC-DC converters and microcontrollers. Use Value: 50 A IFSM withstands jump-start surges; −55°C to +175°C operation ensures reliability in engine bay environments. |
| High-Frequency DC-DC Converters | Freewheeling Diodes |
Use Scenario: Output rectification in point-of-load (POL) converters for FPGA and ASIC core supplies (e.g., 12 V → 1.2 V @ 20 A). IC Role / Device Role / Timing Role: Synchronous rectifier complement or freewheeling path in non-synchronous buck regulators. Use Value: Fast switching and low QRR minimize switching losses at 1–2 MHz frequencies, supporting >92% efficiency at full load. | Use Scenario: Freewheeling path in boost and flyback converters used in LED drivers and industrial sensors. IC Role / Device Role / Timing Role: Provides low-loss current recirculation path during MOSFET off-time to maintain continuous inductor current. Use Value: 0.47 V VF at 1 A/125°C ensures stable voltage regulation under elevated ambient conditions without thermal runaway. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Schottky rectifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SB260-E3/54 | Higher VF (0.85 V @ 2 A), larger DO-214AA package, no AEC-Q101 qualification. | Suitable for commercial-grade AC-DC adapters but not automotive reverse battery protection. | Choose SB260-E3/54 only if cost sensitivity outweighs thermal and qualification requirements. |
| SS26HE3_A/H | Same 60 V/2 A rating, SMA package (RJA = 70°C/W), AEC-Q101 qualified, VF = 0.62 V @ 2 A. | Compatible for space-constrained PCBs where 1.1 mm height is less critical than footprint size. | Select SS26HE3_A/H when board area is more constrained than Z-height and thermal pad area is limited. |
Compared with SB260-E3/54 and SS26HE3_A/H, the NRVTSM260ET1G delivers superior thermal performance via its exposed-cathode Powermite package and lowest VF in its class, making it optimal for high-density, thermally demanding automotive and industrial DC-DC designs.
Availability
NRVTSM260ET1G is available at Aetrix Electronics and suitable for switching power supplies, reverse battery protection, and high-frequency DC-DC converters requiring stable component supply and automotive-grade reliability.
Supply support for NRVTSM260ET1G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor supplier focused on energy-efficient electronics, delivering silicon solutions for automotive, industrial, cloud, and IoT applications.
The NRVTSM260ET1G belongs to onsemi's Powermite Schottky rectifier family, engineered specifically for high-efficiency, high-reliability power conversion in space- and thermal-constrained automotive and industrial systems.
FAQ
What is the maximum junction temperature rating for NRVTSM260ET1G?
The NRVTSM260ET1G has a specified junction temperature range of −55°C to +175°C, verified per AEC-Q101 stress testing. This rating allows reliable operation in under-hood automotive environments and high-ambient industrial enclosures. Thermal design must ensure actual TJ remains within this limit using the provided RJL = 8.6°C/W and RJA values under defined PCB conditions. The NRVTSM260ET1G datasheet confirms derating curves for IF(AV) versus TC up to 162°C case temperature.
Is NRVTSM260ET1G RoHS and halogen-free compliant?
Yes, the NRVTSM260ET1G is both Pb-free and halide-free, meeting RoHS Directive 2011/65/EU and JEDEC JS709A standards. The device marking includes "G" suffix and "Pb-Free" designation per ordering information, and the epoxy mold compound complies with UL 94 V-0 flammability rating at 0.125 inch thickness. This compliance is documented in onsemi's material declarations and certified by third-party lab testing.
What is the recommended PCB pad layout for optimal thermal performance of NRVTSM260ET1G?
For optimal thermal performance, the NRVTSM260ET1G requires a minimum 700 mm² copper pad (≈1 in²) on the primary side of the PCB, connected via multiple thermal vias to internal or backside ground planes. The datasheet specifies that RJL = 8.6°C/W is measured under this condition. Smaller pads (e.g., 20 mm²) increase RJA to 237°C/W, severely limiting usable current. The exposed cathode must be fully soldered - no tenting or solder mask over the pad.
Does NRVTSM260ET1G support high-frequency switching above 1 MHz?
Yes, the NRVTSM260ET1G exhibits fast switching behavior due to its trench Schottky construction and negligible reverse recovery charge (QRR ≈ 0 nC), making it suitable for operation up to 2 MHz in DC-DC converters. Typical forward recovery time is <10 ns, and reverse leakage remains stable up to 125°C. Application notes AN-1117 and AND9010 confirm stable performance in 1–3 MHz synchronous buck designs using NRVTSM260ET1G as a freewheeling diode.
How does the Powermite package of NRVTSM260ET1G compare to SMA in thermal performance?
The Powermite (Case 457) package of NRVTSM260ET1G provides significantly better thermal performance than standard SMA: RJL = 8.6°C/W (Powermite, 700 mm² pad) vs. ~35°C/W (SMA, same pad). This is achieved via direct die-to-exposed-cathode conduction and optimized mold compound. In practice, NRVTSM260ET1G runs ~22°C cooler than SMA-packaged equivalents at 2 A continuous load, enabling higher power density without forced air cooling.
NRVTSM260ET1G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- DO-216AA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- Schottky
- Voltage - DC Reverse (Vr) (Max):
- 60 V
- Current - Average Rectified (Io):
- 2A
- Voltage - Forward (Vf) (Max) @ If:
- 650 mV @ 2 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 12 µA @ 60 V
- Capacitance @ Vr, F:
- -
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- Powermite
- Operating Temperature - Junction:
- -55°C ~ 175°C
NRVTSM260ET1G FAQ
1.How can I place an order for NRVTSM260ET1G through Aetrix?
Please submit a Request for Quotation (RFQ) for NRVTSM260ET1G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for NRVTSM260ET1G reliable?
The price and inventory of NRVTSM260ET1G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NRVTSM260ET1G is usually 5 days.
3.What payment methods are accepted for NRVTSM260ET1G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NRVTSM260ET1G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for NRVTSM260ET1G?
NRVTSM260ET1G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your NRVTSM260ET1G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for NRVTSM260ET1G?
For technical support, including NRVTSM260ET1G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NRVTSM260ET1G requirements.
6.How does Aetrix verify that NRVTSM260ET1G is sourced from the original manufacturer or authorized distributors?
All NRVTSM260ET1G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NRVTSM260ET1G meets industry standards.
7.What is the process for return or replacement of NRVTSM260ET1G?
All NRVTSM260ET1G units undergo pre-shipment inspection (PSI). If there is an issue with NRVTSM260ET1G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The NRVTSM260ET1G part is unused and in its original packaging.
Return procedure for NRVTSM260ET1G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
NRVTSM260ET1G Tags
-
1N4448X-TP
Micro Commercial Co
-
1N4148WX-TP
Micro Commercial Co
-
1N4148TR
onsemi
-
MMSD4148T1G
onsemi
-
MMBD914LT3G
onsemi
-
BAS16HT1G
onsemi
-
1N914BWT
onsemi
-
BAS21LT1G
onsemi
-
LL4148
onsemi
-
BAS16LT1G
onsemi
-
MMSD914T1G
onsemi
-
BAV21W-7-F
Diodes Incorporated
Tech Hub
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
