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onsemi NSVBAS116LT3G
- Part No.:
- NSVBAS116LT3G
- Manufacturer:
- onsemi
- Category:
- Single Diodes
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
NSVBAS116LT3G.pdf
- Description:
- DIODE GEN PURP 75V 200MA SOT23-3
- Quantity:
- Payment:
- Shipping:
Inventory:11,537
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Product details
Overview
NSVBAS116LT3G from onsemi is an automotive-grade SOT-23 packaged silicon switching diode with 75 V reverse voltage rating, 200 mA peak forward current, 3.0 ns reverse recovery time, and 2.0 pF junction capacitance at 0 V - used in high-speed signal routing and low-leakage bias networks in engine control units and ADAS sensor interfaces.
For engineers reviewing the NSVBAS116LT3G datasheet, pinout, applications, or equivalent options, key selection criteria include reverse leakage at 150°C (≤80 nA), forward voltage at 150 mA (≤1250 mV), thermal resistance on FR-5 board (556°C/W), AEC-Q101 qualification, and Pb-free SOT-23 packaging for under-hood automotive use.
Technical Context
This diode operates as a medium-speed unidirectional switch in clamping, protection, and sampling circuits where low capacitance and fast turn-off are required. Its 3.0 ns trr and 2.0 pF CD support >100 MHz signal integrity in timing-critical paths.
The device is rated for continuous operation from −55°C to +150°C with ≤5.0 nA reverse leakage at 75 V and 25°C, rising to ≤80 nA at 150°C - enabling stable biasing in high-temperature powertrain modules.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Voltage (VR) | 75 Vdc - supports 48 V and 12 V automotive bus transient suppression without breakdown |
| Reverse Recovery Time (trr) | 3.0 ns - enables clean switching in >100 MHz clock distribution and RF detector circuits |
| Junction Capacitance (CD) | 2.0 pF at 0 V - minimizes signal loading in high-frequency analog front-ends |
| Forward Voltage (VF) | 1250 mV at 150 mA - ensures predictable conduction loss in low-duty-cycle pulse applications |
| Leakage Current (IR) | 80 nA at 75 V, 150°C - maintains accuracy in precision reference and sensor bias networks |
| Thermal Resistance (RJA) | 556°C/W on FR-5 board - defines derating slope (1.8 mW/°C) for PCB-level thermal design |
Pinout & Package
SOT-23 (TO-236) package, 3-terminal surface-mount device with standard pin assignment: Pin 1 = Anode, Pin 2 = Cathode, Pin 3 = Not connected (NC) - verified per onsemi Case 318 Style 8 marking diagram and mechanical drawings.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Anode | Forward current entry point; connects to source-side of switched path |
| Pin 2 | Cathode | Forward current exit and reverse voltage reference node; ties to ground or return rail |
| Pin 3 | Not Connected | No internal bond; must remain floating or grounded per layout best practice to avoid parasitic coupling |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive powertrain and chassis systems requiring PPAP documentation and zero-defect reliability |
| Low leakage at high temperature | ≤80 nA IR at 150°C enables stable operation in under-hood ECU environments |
| Pb-free, Halogen-free, RoHS-compliant | Meets global automotive environmental compliance mandates including ELV and IMDS reporting |
| Fast reverse recovery | 3.0 ns trr supports clean edge transitions in PWM gate drive snubbers and ADC sample-and-hold clamps |
Applications
| Engine Control Unit (ECU) Input Protection | ADAS Camera Sensor Bias Network |
|---|---|
Use Scenario: Protects microcontroller GPIO inputs from load-dump transients and inductive kickback in 12 V powertrain subsystems. IC Role / Device Role / Timing Role: Fast-switching clamp diode placed between input pin and battery rail to shunt overvoltage spikes. Use Value: 75 V VR rating and 3.0 ns trr prevent latch-up during ISO 7637-2 Pulse 5a events while minimizing signal distortion. | Use Scenario: Provides stable DC bias to CMOS image sensor photodiode arrays operating at 150°C ambient. IC Role / Device Role / Timing Role: Low-leakage series bias element in constant-current mirror configuration. Use Value: ≤80 nA IR at 150°C avoids drift in pixel dark-current compensation circuits. |
| Automotive Infotainment RF Detector | Electric Power Steering (EPS) PWM Snubber |
Use Scenario: Rectifies RF envelope signals in AM/FM diversity receiver front-ends within head unit modules. IC Role / Device Role / Timing Role: High-frequency demodulation diode in peak-detector topology. Use Value: 2.0 pF CD and 3.0 ns trr preserve signal fidelity up to 200 MHz without phase skew. | Use Scenario: Suppresses voltage overshoot across MOSFET switches in EPS motor phase-leg drivers. IC Role / Device Role / Timing Role: Fast-recovery snubbing diode in RCD clamp network. Use Value: Sub-5 ns trr limits energy dissipation during 20 kHz PWM commutation, reducing thermal stress on gate drivers. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar switching diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BAS116LT1G | Same die, 3,000-unit 7-inch tape reel vs. 10,000-unit 13-inch reel; identical electrical specs and AEC-Q101 status | Preferred for low-volume prototyping and small-batch validation builds | Select when production volume <50k units/year or when reel change frequency must be minimized |
| NSVBAS21LT3G | Higher VR (250 V), slower trr (50 ns), higher VF (1.25 V @ 100 mA); same SOT-23 package and AEC-Q101 rating | Better suited for 48 V battery system surge clamping but unsuitable for >10 MHz signal paths | Choose only when reverse voltage margin >150 V is mandatory and speed is secondary |
Compared with BAS116LT1G, NSVBAS116LT3G offers identical performance in a higher-volume tape format; versus NSVBAS21LT3G, it delivers 16× faster recovery and 3.3× lower capacitance at the cost of 3.3× lower reverse voltage - making it optimal for high-frequency automotive signal conditioning rather than high-voltage power protection.
Availability
NSVBAS116LT3G is available at Aetrix Electronics and suitable for engine control units, ADAS camera modules, infotainment RF receivers, and electric power steering systems requiring stable component supply with full automotive traceability.
Supply support for NSVBAS116LT3G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (Semiconductor Components Industries, LLC) is a global supplier of energy-efficient semiconductor solutions focused on automotive, industrial, cloud, and IoT applications.
The BAS116L family is designed specifically for high-reliability automotive signal switching - emphasizing low leakage, fast recovery, and AEC-Q101 compliance in compact SOT-23 packaging.
FAQ
What is the maximum operating temperature for NSVBAS116LT3G?
The NSVBAS116LT3G has a specified junction and storage temperature range of −55°C to +150°C. It is fully characterized for leakage current and forward voltage up to 150°C, and its AEC-Q101 qualification confirms suitability for under-hood automotive environments where sustained 150°C operation occurs. Derating of power dissipation begins above 25°C per the 1.8 mW/°C slope on FR-5 board.
Is NSVBAS116LT3G pin-compatible with BAS116LT1G?
Yes, NSVBAS116LT3G is pin-compatible with BAS116LT1G - both use identical SOT-23 (Case 318) packaging with matching pin 1 (anode), pin 2 (cathode), and pin 3 (NC) assignments. The only difference is tape-and-reel packaging: NSVBAS116LT3G ships in 10,000-unit 13-inch reels, while BAS116LT1G uses 3,000-unit 7-inch reels. Electrical and thermal specifications are identical.
Does NSVBAS116LT3G meet AEC-Q101 requirements?
Yes, NSVBAS116LT3G is explicitly AEC-Q101 qualified and PPAP capable, as confirmed in the official onsemi datasheet revision 13 (June 2023). The "NSV" prefix denotes automotive-grade screening, including stress testing for temperature cycling, humidity bias, and high-temperature operating life - making NSVBAS116LT3G suitable for safety-critical powertrain and chassis applications.
What is the reverse leakage current of NSVBAS116LT3G at 75 V and 150°C?
The NSVBAS116LT3G exhibits a maximum reverse leakage current of 80 nA when biased at 75 Vdc and operated at 150°C, as specified in the Electrical Characteristics table. This value is critical for maintaining accuracy in high-temperature bias networks such as those found in exhaust gas recirculation (EGR) sensors and turbocharger pressure transducers.
Can NSVBAS116LT3G be used in RF detector circuits?
Yes, NSVBAS116LT3G is suitable for RF detector applications due to its 2.0 pF junction capacitance at 0 V and 3.0 ns reverse recovery time - parameters validated in onsemi's typical characteristics curves (Figures 1–4). These values support reliable envelope detection up to 200 MHz in automotive infotainment AM/FM tuners, provided layout minimizes parasitic inductance and grounding is optimized.
NSVBAS116LT3G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 75 V
- Current - Average Rectified (Io):
- 200mA
- Voltage - Forward (Vf) (Max) @ If:
- 1.25 V @ 150 mA
- Speed:
- Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr):
- 3 µs
- Current - Reverse Leakage @ Vr:
- 5 nA @ 75 V
- Capacitance @ Vr, F:
- -
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23-3 (TO-236)
- Operating Temperature - Junction:
- -55°C ~ 150°C
NSVBAS116LT3G FAQ
1.How can I place an order for NSVBAS116LT3G through Aetrix?
Please submit a Request for Quotation (RFQ) for NSVBAS116LT3G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for NSVBAS116LT3G reliable?
The price and inventory of NSVBAS116LT3G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NSVBAS116LT3G is usually 5 days.
3.What payment methods are accepted for NSVBAS116LT3G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NSVBAS116LT3G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for NSVBAS116LT3G?
NSVBAS116LT3G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your NSVBAS116LT3G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for NSVBAS116LT3G?
For technical support, including NSVBAS116LT3G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NSVBAS116LT3G requirements.
6.How does Aetrix verify that NSVBAS116LT3G is sourced from the original manufacturer or authorized distributors?
All NSVBAS116LT3G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NSVBAS116LT3G meets industry standards.
7.What is the process for return or replacement of NSVBAS116LT3G?
All NSVBAS116LT3G units undergo pre-shipment inspection (PSI). If there is an issue with NSVBAS116LT3G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The NSVBAS116LT3G part is unused and in its original packaging.
Return procedure for NSVBAS116LT3G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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