Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Diodes > Rectifiers > Single Diodes

onsemi NSVBAS20LT3G

Name: NSVBAS20LT3G
Brand: onsemi
SKU: NSVBAS20LT3G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: NSVBAS20LT3G

Manufacturer:: onsemi

Category:: Single Diodes

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: NSVBAS20LT3G.pdf

Description:: DIODE GP 200V 200MA SOT23-3

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:8,550

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

NSVBAS20LT3G from onsemi is an AEC-Q101 qualified high-voltage switching diode in SOT-23 package, rated for 200 V repetitive peak reverse voltage (V_RRM), 200 mA continuous forward current (I_F), and 50 ns reverse recovery time (t_rr). It serves as a fast, low-capacitance rectifier or signal routing switch in automotive power management and industrial sensor interface circuits.

For engineers reviewing the NSVBAS20LT3G datasheet, pinout, applications, or equivalent options, key selection criteria include its 200 V blocking capability, 5.0 pF junction capacitance at 0 V, 1.25 V forward voltage at 200 mA, AEC-Q101 qualification, and Pb-free SOT-23 footprint compatibility with space-constrained automotive ECUs.

Technical Context

This diode employs a planar epitaxial silicon structure optimized for high-speed switching under high reverse-bias stress. Its 200 V V_RRM rating enables use in 24 V and 48 V automotive supply rail clamping and flyback snubbing, while the 50 ns t_rr supports operation up to several MHz in pulse-width modulated signal paths.

Thermal performance is defined for FR-5 board mounting: 225 mW power dissipation at 25 °C ambient, derating linearly at 1.8 mW/°C above that temperature, with a junction-to-ambient thermal resistance (R_JA) of 556 °C/W - critical for sustained conduction in engine control modules.

Key Specifications

Parameter	Value and Actual Design Meaning
V_RRM	200 Vdc - supports reliable blocking in 24 V automotive systems with transient overvoltage margin
I_F	200 mAdc - sufficient for signal-level switching and low-power supply rail steering
t_rr	50 ns - enables clean edge transitions in digital logic interface and PWM timing circuits
C_D	5.0 pF at 0 V, 1 MHz - minimizes capacitive loading in high-frequency signal routing paths
V_F	1.25 V at 200 mAdc - balances conduction loss and thermal rise in compact PCB layouts
I_R	0.1 μA at 150 °C, 150 Vdc - ensures low leakage in hot under-hood environments
T_J, T_stg	−55 to +150 °C - meets extended temperature requirements for engine bay and transmission control units

Pinout & Package

SOT-23 (TO-236) package, 2.90 × 1.30 × 1.00 mm body, 1.90 mm lead pitch, case 318, style 8 - surface-mountable, JEDEC-compliant, RoHS/Pb-free.

Pin/Terminal	Circuit Role	Design Meaning
1	Anode	Forward current entry point; connects to source-side of switched path or positive rail
2	No Connection	Internally unconnected; must remain floating - no PCB trace or pad required
3	Cathode	Forward current exit point; ties to load, ground, or return path; polarity-sensitive for reverse blocking

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive-grade reliability including temperature cycling, HTRB, and ESD robustness per JESD47
Pb-free / RoHS compliant	Meets EU RoHS Directive 2011/65/EU and halogen-free/BFR-free requirements for end-of-life compliance
Low reverse recovery charge (Q_rr)	Enables reduced switching losses and lower EMI in high-frequency DC-DC feedback loops
High junction temperature rating	150 °C max operating junction temperature supports placement near heat-generating components
Small outline footprint	SOT-23 package allows dense layout in space-constrained ADAS camera modules and battery management sensors

Applications

Automotive Engine Control Unit (ECU)	Industrial Sensor Signal Conditioning
Use Scenario: Clamping inductive kickback from solenoid drivers during valve actuation in 12 V/24 V engine management systems. IC Role / Device Role / Timing Role: High-voltage transient suppressor protecting microcontroller I/O pins and driver ICs from >100 V spikes. Use Value: 200 V V_RRM and 50 ns t_rr ensure fast energy diversion without oscillation or latch-up in sub-μs transients.	Use Scenario: Level-shifting and isolation between analog sensor outputs (e.g., RTD bridges) and ADC front-ends in factory automation PLCs. IC Role / Device Role / Timing Role: Bidirectional signal path selector enabling multiplexed sensor readout with minimal crosstalk. Use Value: 5.0 pF capacitance and <0.1 μA leakage at 85 °C preserve signal integrity and offset stability across temperature ranges.
Automotive Body Control Module (BCM)	Power Supply Sequencing Circuit
Use Scenario: Reverse-polarity protection for LIN bus transceivers and LED lighting drivers in door modules and mirror controls. IC Role / Device Role / Timing Role: Unidirectional current gate preventing damage from accidental battery reversal during service. Use Value: 200 mA I_F rating and 1.25 V V_F support continuous operation at 10–15 mA typical LIN currents with <15 mW conduction loss.	Use Scenario: OR-ing diode in dual-redundant 5 V supply rails for safety-critical microcontrollers in brake control units. IC Role / Device Role / Timing Role: Low-loss power path selector ensuring seamless switchover during primary rail dropout. Use Value: Low forward voltage and 200 mA rating minimize voltage drop and thermal rise during sustained 100 mA load conditions.

Automotive Engine Control Unit (ECU)

Industrial Sensor Signal Conditioning

Use Scenario: Clamping inductive kickback from solenoid drivers during valve actuation in 12 V/24 V engine management systems.

IC Role / Device Role / Timing Role: High-voltage transient suppressor protecting microcontroller I/O pins and driver ICs from >100 V spikes.

Use Value: 200 V V_RRM and 50 ns t_rr ensure fast energy diversion without oscillation or latch-up in sub-μs transients.

Use Scenario: Level-shifting and isolation between analog sensor outputs (e.g., RTD bridges) and ADC front-ends in factory automation PLCs.

IC Role / Device Role / Timing Role: Bidirectional signal path selector enabling multiplexed sensor readout with minimal crosstalk.

Use Value: 5.0 pF capacitance and <0.1 μA leakage at 85 °C preserve signal integrity and offset stability across temperature ranges.

Automotive Body Control Module (BCM)

Power Supply Sequencing Circuit

Use Scenario: Reverse-polarity protection for LIN bus transceivers and LED lighting drivers in door modules and mirror controls.

IC Role / Device Role / Timing Role: Unidirectional current gate preventing damage from accidental battery reversal during service.

Use Value: 200 mA I_F rating and 1.25 V V_F support continuous operation at 10–15 mA typical LIN currents with <15 mW conduction loss.

Use Scenario: OR-ing diode in dual-redundant 5 V supply rails for safety-critical microcontrollers in brake control units.

IC Role / Device Role / Timing Role: Low-loss power path selector ensuring seamless switchover during primary rail dropout.

Use Value: Low forward voltage and 200 mA rating minimize voltage drop and thermal rise during sustained 100 mA load conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage switching diode applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BAS20LT3G	Same electrical specs and SOT-23 package; lacks AEC-Q101 qualification and NSV prefix for automotive traceability	Approved for industrial/commercial use only; not suitable for production automotive programs requiring PPAP	Select NSVBAS20LT3G when full automotive qualification, lot traceability, and change control per IATF 16949 are mandatory
1N4148WT	Lower 100 V V_RRM, higher 4.0 nA I_R at 25 °C, same 4 ns t_rr; SOD-323 package (smaller, 1.7 × 1.3 mm)	Not rated for automotive under-hood temperatures; limited to ≤125 °C junction operation	Choose 1N4148WT only for cost-sensitive commercial designs with <100 V stress and ambient <85 °C

Compared with BAS20LT3G, NSVBAS20LT3G adds AEC-Q101 validation and manufacturing site control; versus 1N4148WT, it trades faster recovery for higher voltage blocking and extended temperature capability - essential for automotive power domain isolation.

Availability

NSVBAS20LT3G is available at Aetrix Electronics and suitable for automotive ECU design, industrial sensor interface development, and power supply sequencing applications requiring stable component supply across multi-year production cycles.

Supply support for NSVBAS20LT3G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, and cloud infrastructure markets.

The BAS series high-voltage switching diodes are engineered for robust transient suppression and fast signal routing in harsh-environment electronics - particularly targeting automotive power distribution and industrial control systems demanding AEC-Q101 reliability.

FAQ

What is the maximum junction temperature rating for NSVBAS20LT3G?

The NSVBAS20LT3G has a maximum junction temperature (T_Jmax) of 150 °C, validated per AEC-Q101 stress testing. This allows direct placement near heat sources in engine control modules and transmission controllers, provided thermal design accounts for its 556 °C/W R_JA on FR-5 board.

Is NSVBAS20LT3G pin-compatible with BAS20LT3G?

Yes, NSVBAS20LT3G uses identical SOT-23 package and pinout (Anode–NC–Cathode, style 8) as BAS20LT3G. However, NSVBAS20LT3G includes automotive-specific process controls, lot traceability, and AEC-Q101 qualification - making it the required choice for production automotive programs.

Does NSVBAS20LT3G support reverse-battery protection in 24 V automotive systems?

Yes, NSVBAS20LT3G's 200 V V_RRM provides sufficient margin for reverse-battery transients up to −20 V in 24 V systems. Its 0.1 μA leakage at 150 °C ensures minimal standby current drain in always-on BCM circuits, meeting ISO 16750-2 requirements.

What is the reverse recovery time (t_rr) test condition for NSVBAS20LT3G?

The NSVBAS20LT3G t_rr of 50 ns is measured under standardized conditions: I_F = I_R = 30 mA, I_R(REC) = 3.0 mA, and R_L = 100 Ω, per Figure 1 in the onsemi datasheet. This reflects real-world performance in PWM-driven inductive loads like fuel injectors and solenoids.

Can NSVBAS20LT3G be used in place of 1N4148 in high-frequency signal routing?

NSVBAS20LT3G is not a direct replacement for 1N4148 in general-purpose signal routing due to its slower 50 ns t_rr (versus 4 ns for 1N4148) and higher V_F. However, it is preferred where 200 V blocking, automotive qualification, or elevated temperature operation (>125 °C) is required - such as in CAN transceiver bias networks or LIN bus protection.

NSVBAS20LT3G Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Active

Technology:: Standard

Voltage - DC Reverse (Vr) (Max):: 200 V

Current - Average Rectified (Io):: 200mA

Voltage - Forward (Vf) (Max) @ If:: 1.25 V @ 200 mA

Speed:: Small Signal =< 200mA (Io), Any Speed

Reverse Recovery Time (trr):: 50 ns

Current - Reverse Leakage @ Vr:: 100 nA @ 150 V

Capacitance @ Vr, F:: -

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-23-3 (TO-236)

Operating Temperature - Junction:: -55°C ~ 150°C

NSVBAS20LT3G FAQ

1.How can I place an order for NSVBAS20LT3G through Aetrix?

Please submit a Request for Quotation (RFQ) for NSVBAS20LT3G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for NSVBAS20LT3G reliable?

The price and inventory of NSVBAS20LT3G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for NSVBAS20LT3G is usually 5 days.

3.What payment methods are accepted for NSVBAS20LT3G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for NSVBAS20LT3G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for NSVBAS20LT3G?

NSVBAS20LT3G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your NSVBAS20LT3G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for NSVBAS20LT3G?

For technical support, including NSVBAS20LT3G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your NSVBAS20LT3G requirements.

6.How does Aetrix verify that NSVBAS20LT3G is sourced from the original manufacturer or authorized distributors?

All NSVBAS20LT3G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that NSVBAS20LT3G meets industry standards.

7.What is the process for return or replacement of NSVBAS20LT3G?

All NSVBAS20LT3G units undergo pre-shipment inspection (PSI). If there is an issue with NSVBAS20LT3G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The NSVBAS20LT3G part is unused and in its original packaging.

Return procedure for NSVBAS20LT3G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…