onsemi NTVB275NSC-L

Overview

NTVB275NSC-L from onsemi is a bidirectional thyristor surge protector (TSPD) designed for overvoltage clamping in telecom line interfaces. It features 275 V peak off-state voltage (V_DRM), 350 V breakover voltage (V_BO), 4.0 V on-state voltage (V_T), 150 mA holding current (I_H), and supports 10×700 µs surge currents up to 200 A(pk) per ITU-T K.20/21. It protects central office, access, and customer premises equipment.

For engineers reviewing the NTVB275NSC-L datasheet, pinout, applications, or equivalent options, key selection criteria include bidirectional crowbar action, SMB package compatibility, GR-1089-CORE/IEC 61000-4-5 compliance, and 275 V standoff with low capacitance (28 pF).

Technical Context

The NTVB275NSC-L operates as a voltage-triggered crowbar device: it remains high-impedance below V_DRM (275 V), switches to low-impedance conduction at V_BO (350 V), and latches until current falls below I_H (150 mA). Its bidirectional symmetry enables protection of AC-coupled telecom lines without polarity constraints.

It delivers robust surge immunity across multiple waveforms - including 10×700 µs (200 A), 10×360 µs (150 A), and 2×10 µs (150 A) - while maintaining low off-state leakage (≤5 µA at V_DRM) and 28 pF typical capacitance at 1 MHz, minimizing signal distortion in DSL/VoIP interfaces.

Key Specifications

Pinout & Package

NTVB275NSC-L uses the SMB (DO-214AA, Case 403C) surface-mount package - 4.06 mm × 3.30 mm footprint, 2.26 mm height - optimized for automated assembly and thermal performance (R_θJA = 90°C/W).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar thyristor surge protector applications.

Compared with NTVB275NSC-L, NTVB270SC-L offers higher breakover margin but lower standoff, while NTVB220NSC-L trades 55 V standoff for broader availability and lower unit cost - all retain SMB footprint and crowbar functionality for telecom surge protection.

Availability

NTVB275NSC-L is available at Aetrix Electronics and suitable for DSL line interface protection, POTS telephone line protection, and central office line card protection requiring stable component supply, long-term lifecycle support, and RoHS-compliant manufacturing.

Supply support for NTVB275NSC-L includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power, analog, sensor, and logic solutions for automotive, industrial, cloud computing, and communications markets.

The NTVB Series is part of onsemi's Thyristor Surge Protector Devices (TSPD) product line, engineered specifically for high-reliability telecom infrastructure protection - balancing fast response, low capacitance, and certified surge immunity across GR-1089, ITU-T, and IEC standards.

FAQ

What is the primary function of the NTVB275NSC-L in a telecom circuit?

The NTVB275NSC-L functions as a bidirectional thyristor surge protector (TSPD) that acts as a crowbar device - remaining non-conductive below 275 V (V_DRM) and switching to low-impedance conduction at 350 V (V_BO) to divert surge energy away from sensitive downstream components. Its symmetric MT1/MT2 terminals enable protection of AC-coupled lines without polarity concerns, making it ideal for DSL, POTS, and central office applications where reliability under repeated surges is critical. The NTVB275NSC-L is validated for GR-1089-CORE and ITU-T K.20/21 compliance.

Does the NTVB275NSC-L require a gate drive or external trigger circuit?

No, the NTVB275NSC-L is a gateless, voltage-triggered thyristor device - it requires no external bias, control signal, or gate drive. Conduction initiates solely when the applied voltage across MT1 and MT2 exceeds the symmetrical breakover voltage (V_BO = 350 V) in either polarity. Once triggered, it latches in the on-state until current drops below the holding current (I_H = 150 mA). This self-triggering behavior simplifies circuit design and eliminates timing-critical control logic, distinguishing the NTVB275NSC-L from gated SCRs or active protection ICs.

What surge waveforms is the NTVB275NSC-L rated for, and what are the corresponding peak current values?

The NTVB275NSC-L is rated for multiple standardized surge waveforms: 150 A(pk) for 2×10 µs (GR-1089-CORE), 90 A(pk) for 10×160 µs (TIA-968-A), 75 A(pk) for 10×360 µs (GR-1089-CORE), 50 A(pk) for 10×560 µs (TIA-968-A), 200 A(pk) for 10×700 µs (ITU-T K.20/21), and 50 A(pk) for 10×1000 µs (GR-1089-CORE). These ratings reflect non-repetitive, single-event surge capability under pulsed test conditions, with full thermal recovery required between tests. The NTVB275NSC-L maintains consistent performance across all waveforms due to its robust silicon structure and SMB package thermal design.

How does the 28 pF capacitance of the NTVB275NSC-L impact high-frequency signal integrity?

The NTVB275NSC-L's typical 28 pF capacitance - measured at 1 MHz and 2 Vdc bias - introduces minimal insertion loss and phase shift in voiceband (0–4 kHz) and broadband DSL (up to 30 MHz) signals. At 1 MHz, its capacitive reactance is ~5.7 kΩ, ensuring negligible shunt loading on line drivers and receivers. This low capacitance preserves signal fidelity, reduces crosstalk, and avoids resonance issues in transformer-coupled interfaces - a key advantage over higher-capacitance alternatives like MOVs or multilayer varistors. The NTVB275NSC-L's capacitance is stable across temperature and voltage, supporting consistent performance in NTVB275NSC-L deployments.

Is the NTVB275NSC-L compatible with lead-free reflow soldering processes?

Yes, the NTVB275NSC-L is manufactured in a Pb-free SMB (DO-214AA) package and qualified for standard lead-free reflow profiles, including JEDEC J-STD-020-compliant peak temperatures up to 260°C. Its thermal resistance (R_θJA = 90°C/W) and package construction ensure reliable solder joint formation without delamination or parametric shift. The "-L" suffix explicitly denotes Pb-free compliance, and the device meets RoHS Directive 2011/65/EU requirements. Customers using NTVB275NSC-L should follow onsemi's recommended solder paste volume, preheat ramp rates, and cooling profiles to maintain long-term reliability in production assemblies.