NXP Semiconductors NUR460,133

Overview

NUR460,133 from NXP Semiconductors is an ultrafast epitaxial power diode in SOD141 (DO-201AD) axial package, designed for high-frequency switching in PFC and SMPS stages. It delivers 600 V repetitive peak reverse voltage, 4 A average forward current, 1.28 V forward voltage at 4 A/25 °C, 33–65 ns reverse recovery time, and low thermal resistance of 55 K/W.

For engineers reviewing the NUR460,133 datasheet, NUR460,133 pinout, NUR460,133 application, or NUR460,133 equivalent, key selection criteria include its soft recovery characteristic, low VF at elevated junction temperature (0.88–1.05 V @ 4 A/150 °C), and suitability for Discontinuous Current Mode (DCM) PFC topologies requiring fast, low-loss rectification.

Technical Context

The NUR460,133 employs an epitaxial silicon structure optimized for ultrafast switching with ramp- and step-recovery modes. Its dynamic behavior is characterized by controlled minority-carrier lifetime, enabling trr as low as 25 ns (step) and 33 ns (ramp) under standardized test conditions (IF = 0.5–1 A, VR = 30 V, dIF/dt = 50 A/µs).

Thermally, it uses a hermetically sealed plastic axial package (SOD141) with cathode-band marking, achieving Rth(j-a) = 55 K/W in free air. Static performance includes IR ≤ 50 µA at VR = 600 V/25 °C and VF stability across Tj = 25–150 °C, supporting reliable operation in thermally constrained high-frequency converters.

Key Specifications

Pinout & Package

SOD141 (DO-201AD) is a hermetically sealed axial-leaded plastic package with cathode identified by a band. Dimensions: 9.6 × 5.3 mm body, 25.4 mm lead length, 1.18–1.30 mm lead diameter. Leads are tinned copper, suitable for wave or hand soldering.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ultrafast power diode applications.

Compared with STTH6006D and MUR460, the NUR460,133 offers the lowest thermal resistance (55 K/W) and tightest trr distribution (25–50 ns step mode), making it optimal for space-constrained, high-efficiency DCM PFC where thermal and EMI margins are critical.

Availability

NUR460,133 is available at Aetrix Electronics and suitable for Discontinuous Current Mode (DCM) Power Factor Correction, high-frequency switched-mode power supplies, and industrial motor drive input rectification requiring stable component supply and long-term lifecycle support.

Supply support for NUR460,133 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and consumer applications.

The NUR460,133 belongs to NXP's ultrafast epitaxial power diode product line, engineered specifically for high-efficiency, high-frequency AC-DC conversion in energy-sensitive power supplies and PFC circuits.

FAQ

What is the maximum junction temperature rating for the NUR460,133?

The NUR460,133 has a maximum junction temperature (T_j) rating of 150 °C, as specified in its limiting values table. This allows reliable operation in enclosed industrial power supplies where ambient temperatures reach 70–85 °C, provided thermal design maintains junction temperature below this threshold. Derating curves in Figures 1 and 2 confirm safe operating area up to 4 A average current at 150 °C junction temperature.

Does the NUR460,133 support soft recovery in both ramp and step test conditions?

Yes, the NUR460,133 exhibits soft recovery behavior in both ramp recovery (Figure 5) and step recovery (Figure 6) test configurations. Its trr specification spans 33–65 ns (ramp) and 25–50 ns (step), with measured waveforms showing gradual current decay rather than abrupt turn-off-critical for minimizing voltage overshoot and EMI in high-frequency PFC designs.

What is the reverse leakage current of the NUR460,133 at full rated voltage?

At V_R = 600 V and T_j = 25 °C, the NUR460,133 exhibits a maximum reverse leakage current (I_R) of 50 µA, per Table 6. This low leakage supports stable hold-up voltage in high-impedance circuits and reduces standby power loss in battery backup and UPS applications where the NUR460,133 may be used in front-end rectification.

How does the forward voltage of the NUR460,133 change with junction temperature?

The NUR460,133 forward voltage decreases with rising junction temperature: VF = 1.28 V at 4 A/25 °C, dropping to 0.88–1.05 V at 4 A/150 °C (Table 6). This negative temperature coefficient improves thermal stability in parallel diode configurations and reduces conduction loss at elevated operating temperatures typical in sealed power enclosures.

Is the NUR460,133 RoHS-compliant and halogen-free?

Yes, the NUR460,133 is RoHS-compliant and halogen-free, consistent with NXP's environmental policy and the "GreenChip" initiative referenced in the legal information section. The SOD141 (DO-201AD) package uses lead-free tinning and halogen-free molding compound, meeting JEDEC J-STD-020 and IEC 61249-2-21 standards for environmentally conscious manufacturing.