Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Vishay General Semiconductor - Diodes Division P4KA18AHE3/73

Part No.:
P4KA18AHE3/73
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
TVS Diodes
Package:
DO-204AL, DO-41, Axial
Datasheet:
AetrixP4KA18AHE3/73.pdf
Description:
TVS DIODE 15.3VWM 25.5VC DO204AL
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:6,216

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

P4KA18AHE3/73 from Vishay General Semiconductor is a unidirectional automotive-grade transient voltage suppressor (TVS) diode in DO-204AL (DO-41) package, with 17.1 V to 18.9 V breakdown voltage (VBR), 15.9 A peak pulse current (IPPM), 25.5 V clamping voltage (VC) at IPPM, 400 W peak pulse power (10/1000 µs), and AEC-Q101 qualified for under-hood electronics protection.

For engineers reviewing the P4KA18AHE3/73 datasheet, P4KA18AHE3/73 pinout, P4KA18AHE3/73 application, or P4KA18AHE3/73 equivalent, this page delivers verified electrical specs, thermal limits, clamping behavior, RoHS-compliant packaging, and automotive reliability validation - all critical for ESD/surge protection design in sensor signal lines, power rails, and MOSFET gate drivers.

Technical Context

This TVS diode operates as a unidirectional clamping device, leveraging patented PAR® construction to deliver low incremental surge resistance and fast response time (<1 ns) during transient events. Its 185 °C maximum junction temperature and -65 °C to +185 °C operating range support high-temperature automotive environments.

Designed per ANSI/IEEE C62.35, it handles non-repetitive 10/1000 µs surges up to 400 W with 0.01% duty cycle, and withstands 40 A peak forward surge current (8.3 ms half-sine). The 0.088 %/°C VBR temperature coefficient ensures stable breakdown across temperature gradients.

Key Specifications

ParameterValue and Actual Design Meaning
VBR (min/max)17.1 V / 18.9 V at 1 mA - defines precise voltage threshold where clamping initiates under transient stress
VC @ IPPM25.5 V at 15.9 A - maximum voltage seen by protected circuit during worst-case 400 W surge
IPPM15.9 A (10/1000 µs) - peak current capability without failure; determines minimum series impedance needed
PPPM400 W - peak transient energy absorption capacity under standardized waveform
TJ max.+185 °C - enables placement near hot components (e.g., engine control units) without derating loss
VWM15.3 V - maximum continuous reverse working voltage; must exceed normal system rail voltage
Leakage @ VWM1.0 µA at 25 °C - negligible standby current draw; avoids battery drain in always-on systems

Pinout & Package

Package: DO-204AL (DO-41), axial leaded, epoxy-molded case meeting UL 94 V-0 flammability rating; matte tin-plated leads compliant with J-STD-002 and JESD22-B102; cathode indicated by color band.

Pin/TerminalCircuit RoleDesign Meaning
AnodeForward conduction pathConnected to ground or lower-potential node in unidirectional configuration; carries surge current to reference plane
CathodeClamping output terminalConnected to protected line (e.g., sensor supply); voltage clamps to ≤25.5 V when transients exceed VBR

Key Features

FeatureDesign Value
Patented PAR® constructionEnables uniform junction stress distribution and repeatable 400 W surge handling without parametric shift
AEC-Q101 qualificationValidated for automotive under-hood use including temperature cycling, HTRB, and surge lifetime testing
Low incremental surge resistanceMinimizes VC overshoot during fast-rising transients (e.g., ISO 7637-2 Pulse 1/2a/5a)
RoHS-compliant HE3 suffixMeets JESD201 Class 2 whisker resistance and EU RoHS 2002/95/EC requirements
High-temperature stability0.088 %/°C VBR coefficient ensures <±5% VBR drift over full -65 °C to +185 °C range

Applications

Automotive Engine Control Unit (ECU) Power Input ProtectionIndustrial Sensor Signal Line Protection

Use Scenario: Protects 12 V power rail of engine control modules against load dump (ISO 7637-2 Pulse 5a) and alternator switching transients.

IC Role / Device Role / Timing Role: Unidirectional TVS clamping device placed between input rail and chassis ground.

Use Value: Limits voltage to ≤25.5 V during 400 W surges, preventing damage to downstream DC/DC converters and microcontrollers.

Use Scenario: Shields analog output lines of pressure/temperature sensors in factory automation against ESD and relay coil flyback.

IC Role / Device Role / Timing Role: Low-capacitance (typ. 100 pF) clamping diode on signal path to MCU ADC input.

Use Value: Maintains signal integrity with <1 µA leakage at 15.3 V, while clamping ±25.5 V spikes before they reach sensitive front-end circuitry.

Automotive Body Control Module (BCM) LIN Bus ProtectionTelecom Power Supply Surge Suppression

Use Scenario: Safeguards LIN transceiver I/O pins against cable discharge events (IEC 61000-4-2) and inductive coupling in vehicle body networks.

IC Role / Device Role / Timing Role: Unidirectional TVS placed between LIN bus line and ground, with cathode tied to bus.

Use Value: Responds in <1 ns to clamp ESD pulses to ≤25.5 V, preserving LIN communication integrity without signal distortion.

Use Scenario: Suppresses AC-line coupled surges (IEC 61000-4-5) on 24 V telecom power inputs feeding base station controllers.

IC Role / Device Role / Timing Role: Primary-level TVS on secondary-side DC output, upstream of bulk capacitance.

Use Value: Absorbs 400 W transients without degradation, enabling compliance with GR-1089-CORE immunity requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient suppression applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
SMBJ18ASame VBR range (16.2–19.8 V), but SMB package (surface-mount); 600 W PPPM; higher IPPM (32.4 A)Requires PCB rework for SMT layout; better suited for space-constrained board-level protectionSelect when automated assembly and footprint density outweigh axial-lead serviceability needs
1.5KE18ASame DO-204AL package; lower PPPM (1500 W), but larger 1.5 kW rating; VBR 15.3–17.1 V; not AEC-Q101 qualifiedLacks automotive qualification; suitable for industrial/commercial only; higher clamping (27.7 V)Choose for cost-sensitive non-automotive designs where AEC-Q101 is not mandated

Compared with SMBJ18A and 1.5KE18A, the P4KA18AHE3/73 uniquely combines AEC-Q101 qualification, DO-41 through-hole robustness, and tightly controlled 17.1–18.9 V VBR - making it optimal for production automotive systems requiring traceable reliability and legacy-compatible assembly.

Availability

P4KA18AHE3/73 is available at Aetrix Electronics and suitable for automotive ECU protection, industrial sensor interface hardening, and telecom power rail surge suppression requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant sourcing.

Supply support for P4KA18AHE3/73 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, TVS devices, and optoelectronics with emphasis on reliability, precision, and high-temperature performance.

The P4KA18AHE3/73 belongs to Vishay's automotive-grade TVS family designed specifically for AEC-Q101-compliant transient suppression in harsh-environment electronics - targeting engine control, body electronics, and ADAS subsystems.

FAQ

What is the exact breakdown voltage range for P4KA18AHE3/73?

The P4KA18AHE3/73 has a guaranteed breakdown voltage (VBR) range of 17.1 V to 18.9 V at 1 mA test current, as specified in the Vishay document 88364. This tight tolerance supports precise overvoltage protection in 12 V automotive systems where margin above nominal rail is critical. The P4KA18AHE3/73 maintains this specification across its full operating temperature range.

Is P4KA18AHE3/73 suitable for bidirectional transient protection?

No, the P4KA18AHE3/73 is unidirectional only, as confirmed in the "FEATURES" section of Vishay document 88364. It protects against positive transients on the cathode side relative to anode (ground). For bidirectional protection, a separate device such as P4SMA18A or dual-diode array would be required. The P4KA18AHE3/73 polarity is marked by a cathode band.

Does P4KA18AHE3/73 meet automotive qualification standards?

Yes, the P4KA18AHE3/73 is explicitly AEC-Q101 qualified per note (1) on page 3 of Vishay document 88364. This qualification covers stress tests including high-temperature reverse bias, temperature cycling, and surge lifetime - confirming suitability for under-hood automotive applications. The HE3 suffix further denotes high-reliability, RoHS-compliant construction.

What is the clamping voltage of P4KA18AHE3/73 at its rated peak pulse current?

The P4KA18AHE3/73 clamps to a maximum of 25.5 V at its rated peak pulse current of 15.9 A (10/1000 µs waveform), as listed in the Electrical Characteristics table on page 2 of Vishay document 88364. This value is measured under standardized conditions and defines the upper voltage limit imposed on protected circuits during surge events.

Can P4KA18AHE3/73 be used in high-temperature environments like engine compartments?

Yes, the P4KA18AHE3/73 supports operation from -65 °C to +185 °C junction temperature, with full 400 W pulse power capability derated linearly above 25 °C ambient (per Fig. 2 in document 88364). Its 185 °C TJmax and AEC-Q101 qualification make it suitable for direct placement in engine control units and other high-heat automotive zones. The P4KA18AHE3/73 retains stable VBR due to its 0.088 %/°C coefficient.

P4KA18AHE3/73 Specifications

Product attributes
Attribute value
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package/Case:
DO-204AL, DO-41, Axial
Series:
PAR®
Packaging:
Tape & Box (TB)
Product Status:
Obsolete
Type:
Zener
Unidirectional Channels:
1
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
15.3V
Voltage - Breakdown (Min):
17.1V
Voltage - Clamping (Max) @ Ipp:
25.5V
Current - Peak Pulse (10/1000µs):
15.9A
Power - Peak Pulse:
400W
Power Line Protection:
No
Applications:
-
Capacitance @ Frequency:
-
Operating Temperature:
-65°C ~ 185°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Through Hole
Supplier Device Package:
DO-204AL (DO-41)

P4KA18AHE3/73 FAQ

1.How can I place an order for P4KA18AHE3/73 through Aetrix?

Please submit a Request for Quotation (RFQ) for P4KA18AHE3/73 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for P4KA18AHE3/73 reliable?

The price and inventory of P4KA18AHE3/73 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for P4KA18AHE3/73 is usually 5 days.

3.What payment methods are accepted for P4KA18AHE3/73?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for P4KA18AHE3/73 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for P4KA18AHE3/73?

P4KA18AHE3/73 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your P4KA18AHE3/73 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for P4KA18AHE3/73?

For technical support, including P4KA18AHE3/73 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your P4KA18AHE3/73 requirements.

6.How does Aetrix verify that P4KA18AHE3/73 is sourced from the original manufacturer or authorized distributors?

All P4KA18AHE3/73 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that P4KA18AHE3/73 meets industry standards.

7.What is the process for return or replacement of P4KA18AHE3/73?

All P4KA18AHE3/73 units undergo pre-shipment inspection (PSI). If there is an issue with P4KA18AHE3/73, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The P4KA18AHE3/73 part is unused and in its original packaging.

Return procedure for P4KA18AHE3/73:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

P4KA18AHE3/73 Tags

  • P4KA18AHE3/73
  • P4KA18AHE3/73 PDF
  • P4KA18AHE3/73 Datasheet
  • P4KA18AHE3/73 Specifications
  • P4KA18AHE3/73 Images
  • Vishay General Semiconductor - Diodes Division
  • Vishay General Semiconductor - Diodes Division P4KA18AHE3/73
  • Buy P4KA18AHE3/73
  • P4KA18AHE3/73 Price
  • P4KA18AHE3/73 Distributor
  • P4KA18AHE3/73 Supplier
  • P4KA18AHE3/73 Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER