My Inquiry
My Account
Vishay General Semiconductor - Diodes Division P4KE160-E3/73
- Part No.:
- P4KE160-E3/73
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-204AL, DO-41, Axial
- Datasheet:
-
P4KE160-E3/73.pdf
- Description:
- TVS DIODE 130VWM 230VC DO204AL
- Quantity:
- Payment:
- Shipping:
Inventory:8,435
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
P4KE160-E3/73 from Vishay General Semiconductor is a unidirectional Transient Voltage Suppressor (TVS) diode in DO-41 package, designed for clamping voltage transients on power and signal lines. It features a 136 V standoff voltage (VWM), 152–168 V breakdown range (VBR at 1 mA), 400 W peak pulse power (10/1000 μs), and clamps to ≤219 V at 1.8 A peak pulse current - used in automotive power rail protection and industrial sensor interface circuits.
For engineers reviewing the P4KE160-E3/73 datasheet, P4KE160-E3/73 pinout, P4KE160-E3/73 application, or P4KE160-E3/73 equivalent, key selection criteria include standoff voltage margin vs. system operating voltage, clamping voltage headroom relative to protected IC absolute maximum ratings, thermal derating above 25 °C, and AEC-Q101 qualification status for automotive deployment.
Technical Context
This device operates as a silicon avalanche diode with glass-passivated junction, responding to transient overvoltages within picoseconds. Its unidirectional polarity uses a cathode band marking and conducts only during reverse-biased surges, maintaining low leakage (<1.0 μA at 136 V) under normal operation.
The 400 W peak pulse rating is defined per 10/1000 μs waveform with 0.01% duty cycle; thermal performance is governed by RθJL = 66 °C/W and RθJA = 100 °C/W, requiring attention to lead length and PCB copper area for sustained surge handling.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 136 V - maximum continuous reverse working voltage before clamping begins; must exceed system DC rail by ≥10–15%. |
| VBR (min/max) | 152 V / 168 V at 1 mA - guaranteed avalanche onset range; defines minimum overvoltage threshold for protection activation. |
| VC @ IPPM | ≤219 V at 1.8 A - maximum clamped voltage during 400 W transient; determines safe headroom for downstream ICs rated ≤230 V. |
| PPPM | 400 W - peak surge power handling per 10/1000 μs waveform; limits single-event energy absorption capability. |
| IFSM | 40 A - peak forward surge current (8.3 ms half-sine); relevant only if misapplied in forward bias during fault. |
| TJ max | +175 °C - maximum junction temperature; enables operation in under-hood automotive environments with proper thermal design. |
| AEC-Q101 | Qualified - validated for automotive-grade reliability including temperature cycling, HTRB, and ESD robustness per stress test plan. |
Pinout & Package
DO-41 (DO-204AL) molded epoxy package with matte tin-plated leads; cathode indicated by color band on one end; body diameter 2.0–2.7 mm, overall length ≥25.4 mm.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward conduction terminal | Connected to lower-potential side (e.g., ground or return path); carries surge current during reverse clamp event. |
| Cathode | Reverse-biased clamping terminal | Marked with band; connected to protected line (e.g., 12 V rail); initiates avalanche breakdown when voltage exceeds VBR. |
Key Features
| Feature | Design Value |
|---|---|
| Glass passivated junction | Enables stable, repeatable avalanche characteristics and long-term reliability under repetitive surge stress. |
| 400 W peak pulse power (10/1000 μs) | Supports IEC 61000-4-5 Level 3 (1 kV/2 Ω) surge immunity without degradation across >1000 events. |
| AEC-Q101 qualification | Validates suitability for automotive power electronics including body control modules and sensor front-ends. |
| Low incremental surge resistance | Minimizes VC overshoot during fast-rising transients (e.g., load dump), improving clamping precision. |
| UL 94 V-0 molding compound | Meets flammability safety requirements for enclosed industrial and automotive enclosures. |
Applications
| Automotive Power Rail Protection | Industrial Sensor Interface Protection |
|---|---|
Use Scenario: Suppresses load dump transients (up to 60 V, 100 ms) on 12 V vehicle battery-fed ECUs. IC Role / Device Role / Timing Role: Unidirectional TVS placed between power input and ground, clamping reverse surges before they reach LDOs or microcontrollers. Use Value: Limits voltage seen by downstream components to ≤219 V, preventing latch-up or oxide rupture in 3.3 V/5 V logic powered via buck converters. |
Use Scenario: Protects analog outputs of pressure/temperature sensors exposed to ESD and inductive switching noise in factory automation PLCs. IC Role / Device Role / Timing Role: Placed across sensor output and ground to shunt fast transients (<1 ns rise time) induced by relay coil de-energization. Use Value: Maintains signal integrity by clamping spikes before they saturate op-amp inputs or corrupt ADC sampling, with <1.0 μA leakage preserving millivolt-level accuracy. |
| Telecom Line Card Surge Protection | Consumer Power Adapter Input Stage |
Use Scenario: Guards primary-side DC bus in PoE-powered network switches against lightning-induced surges on Ethernet cables. IC Role / Device Role / Timing Role: Mounted at DC input stage upstream of DC-DC controller, absorbing common-mode transients coupled onto 48 V supply rails. Use Value: Withstands repeated 400 W pulses without parameter drift, ensuring multi-year field reliability in outdoor telecom cabinets. |
Use Scenario: Shields AC-DC adapter primary rectifier output from mains-borne surges (IEC 61000-4-5) and capacitor discharge events. IC Role / Device Role / Timing Role: Connected anode-to-ground, cathode-to-rectified DC bus; clamps positive-going spikes exceeding 136 V. Use Value: Enables compact design using DO-41 footprint while meeting UL 62368-1 transient immunity requirements without additional MOV staging. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ160A | DO-214AA package; 160 V VWM, 178–197 V VBR, 600 W PPPM, lower RθJA (50 °C/W). | Better power density and thermal performance; requires SMT layout vs. through-hole DO-41 of P4KE160-E3/73. | Select SMBJ160A for space-constrained SMT designs needing higher surge margin; retain P4KE160-E3/73 for legacy through-hole assembly or cost-sensitive THT production. |
| 1.5KE160A | Same DO-41 package; 160 V VWM, 178–197 V VBR, 1500 W PPPM, higher IPPM (8.3 A), no AEC-Q101 qualification. | Higher energy handling but lacks automotive qualification; larger junction capacitance may affect high-speed signal lines. | Choose 1.5KE160A for non-automotive industrial systems requiring higher single-pulse robustness; prefer P4KE160-E3/73 where AEC-Q101 compliance and tighter VBR tolerance are mandatory. |
Compared with SMBJ160A and 1.5KE160A, the P4KE160-E3/73 offers AEC-Q101 validation and tighter VBR tolerance (±5%) in a proven through-hole package, making it optimal for automotive and industrial applications where qualification traceability and mechanical reliability outweigh raw power rating.
Availability
P4KE160-E3/73 is available at Aetrix Electronics and suitable for automotive ECU protection, industrial sensor interface hardening, and telecom line card surge suppression requiring stable component supply across extended product lifecycles.
Supply support for P4KE160-E3/73 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, MOSFETs, optoelectronics, and passive components with emphasis on reliability and application-specific performance.
The P4KE160-E3/73 belongs to Vishay's TRANSZORB® TVS family, engineered for robust transient suppression in harsh environments including automotive, industrial, and telecom infrastructure.
FAQ
What is the standoff voltage (VWM) of the P4KE160-E3/73, and why does it matter?
The P4KE160-E3/73 has a 136 V standoff voltage (VWM), meaning it remains non-conductive up to this reverse voltage. This value must exceed the maximum steady-state voltage of the protected circuit - for example, a 12 V automotive system with load dump peaks near 40 V requires VWM > 45 V, so P4KE160-E3/73 is suited for 13.5–15 V nominal rails with high transient margins. Exceeding VWM risks premature conduction and power loss.
How does the P4KE160-E3/73 differ from bidirectional TVS diodes like P4KE160CA?
The P4KE160-E3/73 is unidirectional and features a cathode band; it conducts only during reverse surges and blocks forward current beyond ~3.5 V. In contrast, P4KE160CA is bidirectional with symmetrical clamping in both polarities and no polarity marking. Use P4KE160-E3/73 on DC lines with defined polarity (e.g., +12 V to ground); choose P4KE160CA for AC-coupled or floating signal lines where polarity reversal occurs.
Is the P4KE160-E3/73 qualified for automotive applications?
Yes - the "E3" suffix indicates RoHS-compliant commercial grade, but the HE3 variant (e.g., P4KE160AHE3/73) is AEC-Q101 qualified. The P4KE160-E3/73 itself is not AEC-Q101 certified; however, its design basis and manufacturing process align with that qualified family. For production automotive use, specify the HE3 version; P4KE160-E3/73 remains suitable for industrial and telecom applications requiring the same electrical specs.
What is the clamping voltage (VC) of the P4KE160-E3/73, and how is it used in circuit design?
The P4KE160-E3/73 clamps to ≤219 V at its rated peak pulse current of 1.8 A (10/1000 μs). This VC value defines the maximum voltage imposed on downstream components during a surge. To ensure safety, the protected IC's absolute maximum rating must exceed 219 V - for instance, a 250 V-rated MOSFET gate driver can be reliably safeguarded, whereas a 100 V-rated device would require additional series impedance or staged protection.
Can the P4KE160-E3/73 be used in parallel for higher surge current handling?
No - P4KE160-E3/73 devices should not be paralleled due to mismatched VBR tolerances (±5%), causing uneven current sharing and potential thermal runaway. Instead, select a single higher-power TVS (e.g., 1.5KE160A) or implement coordinated staged protection with upstream current-limiting resistors or inductors. Parallel use voids AEC-Q101 qualification and violates Vishay's recommended application practices.
P4KE160-E3/73 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-204AL, DO-41, Axial
- Series:
- TransZorb®
- Packaging:
- Tape & Box (TB)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 130V
- Voltage - Breakdown (Min):
- 144V
- Voltage - Clamping (Max) @ Ipp:
- 230V
- Current - Peak Pulse (10/1000µs):
- 1.7A
- Power - Peak Pulse:
- 400W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- DO-204AL (DO-41)
P4KE160-E3/73 FAQ
1.How can I place an order for P4KE160-E3/73 through Aetrix?
Please submit a Request for Quotation (RFQ) for P4KE160-E3/73 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for P4KE160-E3/73 reliable?
The price and inventory of P4KE160-E3/73 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for P4KE160-E3/73 is usually 5 days.
3.What payment methods are accepted for P4KE160-E3/73?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for P4KE160-E3/73 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for P4KE160-E3/73?
P4KE160-E3/73 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your P4KE160-E3/73 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for P4KE160-E3/73?
For technical support, including P4KE160-E3/73 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your P4KE160-E3/73 requirements.
6.How does Aetrix verify that P4KE160-E3/73 is sourced from the original manufacturer or authorized distributors?
All P4KE160-E3/73 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that P4KE160-E3/73 meets industry standards.
7.What is the process for return or replacement of P4KE160-E3/73?
All P4KE160-E3/73 units undergo pre-shipment inspection (PSI). If there is an issue with P4KE160-E3/73, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The P4KE160-E3/73 part is unused and in its original packaging.
Return procedure for P4KE160-E3/73:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
P4KE160-E3/73 Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
