Taiwan Semiconductor Corporation P4KE200A

Overview

P4KE200A from Taiwan Semiconductor is a unidirectional transient voltage suppressor (TVS) diode designed for high-energy surge protection in DC power rails and signal lines. It features a 200V nominal standoff voltage, 190–210V breakdown range at 1mA test current, 171V working peak reverse voltage, ≤1.51A peak pulse current (10/1000μs), and clamps to ≤274V under rated surge - deployed in automotive power supplies, industrial I/O interfaces, and LED driver input stages.

For engineers reviewing the P4KE200A datasheet, P4KE200A pinout, P4KE200A application, or P4KE200A equivalent, key selection criteria include its DO-204AL (DO-41) axial package, unidirectional polarity with cathode band marking, low leakage (<1μA @ 171V), AEC-Q101 qualification option (P4KE200AH), and thermal derating behavior above 25°C ambient.

Technical Context

The P4KE200A operates as a silicon avalanche diode, leveraging controlled reverse-biased breakdown to clamp transient overvoltages. Its 10/1000μs waveform surge rating of 400W defines energy-handling capability under standardized lightning-induced surges, while its <1.0ps response time ensures sub-nanosecond turn-on from zero bias to V_BR.

Thermal design requires attention to junction temperature limits (−55°C to +175°C) and steady-state power dissipation (1W at 75°C lead temperature). The device exhibits a positive V_BR temperature coefficient of 0.108%/°C, meaning breakdown voltage increases linearly with temperature - critical for high-temperature automotive or industrial deployments.

Key Specifications

Pinout & Package

DO-204AL (DO-41) axial package with cathode band marking for unidirectional polarity. Leads are pure tin-plated, solderable per J-STD-002, and mounted on 5×5 mm copper pads for thermal derating compliance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient voltage suppression applications.

Compared with Littelfuse P4KE200A and ON Semi 1.5KE200A, the Taiwan Semiconductor P4KE200A offers tighter V_BR tolerance and optional AEC-Q101 qualification - making it optimal for new automotive designs where parametric consistency and qualification traceability are mandatory.

Availability

P4KE200A is available at Aetrix Electronics and suitable for automotive power modules, industrial PLC input protection, and LED driver front-end surge suppression requiring stable component supply across multi-year production cycles.

Supply support for P4KE200A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and discrete semiconductor manufacturer headquartered in Hsinchu, Taiwan, specializing in TVS diodes, rectifiers, and power MOSFETs since 1979.

The P4KE Series was developed specifically for high-reliability transient suppression in automotive, industrial, and telecom infrastructure - emphasizing AEC-Q101 readiness, tight parametric control, and UL safety certification from wafer to final test.

FAQ

What is the maximum clamping voltage of the P4KE200A under rated surge conditions?

The P4KE200A clamps to a maximum of 274 V when subjected to its rated 1.51 A peak pulse current (10/1000μs waveform). This value is measured per ANSI/IEEE C62.35 standards and represents the highest voltage seen across the device during surge conduction - a critical parameter for ensuring downstream components remain within their absolute maximum ratings. The P4KE200A maintains this clamping performance across its full operating temperature range (−55°C to +175°C).

Is the P4KE200A unidirectional or bidirectional, and how is polarity identified?

The P4KE200A is a unidirectional TVS diode, intended for DC circuit protection where reverse voltage is not expected. Polarity is marked by a cathode band on the DO-204AL (DO-41) package body - the banded end connects to the higher-potential side (e.g., 24V rail), while the unbanded end connects to ground. Bidirectional variants in the same series carry a "C" or "CA" suffix (e.g., P4KE200CA), which the P4KE200A does not have.

Does the P4KE200A meet automotive qualification standards?

The base P4KE200A is not AEC-Q101 qualified; however, the variant P4KE200AH (with "H" suffix) is fully AEC-Q101 qualified and tested per stress test conditions including temperature cycling, humidity, and mechanical shock. The P4KE200AH shares identical electrical specifications with the P4KE200A and is manufactured on the same process line - only the qualification screening differs. For automotive applications, specify P4KE200AH to ensure compliance.

What is the reverse leakage current specification for the P4KE200A at its working voltage?

The P4KE200A exhibits a maximum reverse leakage current (I_R) of 1 μA when biased at its working peak reverse voltage (V_WM) of 171 V and tested at 25°C ambient. This ultra-low leakage ensures negligible power loss in standby mode and prevents unwanted loading of high-impedance sensor or reference circuits. Leakage remains below 5 μA up to 125°C junction temperature, as confirmed in TSC's thermal derating curves.

How does the P4KE200A's temperature coefficient affect its breakdown voltage in real-world operation?

The P4KE200A has a positive breakdown voltage temperature coefficient of +0.108 %/°C, meaning its V_BR increases by approximately 0.216 V per 10°C rise in junction temperature. At 125°C junction temperature, V_BR shifts from 190–210 V (at 25°C) to ~193–213 V - still well within its specified range. This predictable drift supports robust design margining in high-temperature environments such as engine compartments or enclosed industrial enclosures.