Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Vishay General Semiconductor - Diodes Division P4KE20-E3/73

Part No.:
P4KE20-E3/73
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
TVS Diodes
Package:
DO-204AL, DO-41, Axial
Datasheet:
AetrixP4KE20-E3/73.pdf
Description:
TVS DIODE 16.2VWM 29.1VC DO204AL
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,840

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

P4KE20-E3/73 from Vishay General Semiconductor is a unidirectional Transient Voltage Suppressor (TVS) diode in DO-41 package, designed for circuit-level overvoltage protection. It features a 20 V breakdown voltage (VBR min/max = 19.0–21.0 V), 17.1 V stand-off voltage (VWM), 1.0 mA test current, and clamps transients to ≤27.7 V at 14.4 A peak pulse current (10/1000 μs waveform). It delivers 400 W peak pulse power and operates across –55 °C to +175 °C junction temperature, commonly used to protect MOSFET gates and sensor signal lines in industrial power supplies.

For engineers reviewing the P4KE20-E3/73 datasheet, P4KE20-E3/73 pinout, P4KE20-E3/73 application, or P4KE20-E3/73 equivalent, key selection criteria include its unidirectional polarity, glass-passivated junction, AEC-Q101 qualification (via HE3 variant), 66 °C/W junction-to-lead thermal resistance, and compliance with UL 94 V-0 molding compound - all critical for automotive-grade transient suppression in constrained PCB layouts.

Technical Context

This TVS diode uses a glass-passivated silicon junction to achieve fast response time (<1 ns) and low incremental surge resistance, enabling effective clamping of inductive switching spikes and ESD events. Its unidirectional configuration provides forward conduction path while blocking reverse leakage up to 1.0 μA at 17.1 V.

The device is rated for 400 W peak pulse power under 10/1000 μs waveform with 0.01% duty cycle, derated linearly above 25 °C ambient per Fig. 2, and supports 40 A non-repetitive forward surge (8.3 ms half-sine) - making it suitable for protecting DC input rails and low-voltage logic interfaces against load dump and lightning-induced surges.

Key Specifications

Parameter Value and Actual Design Meaning
VBR (min/max) 19.0 V / 21.0 V at 1.0 mA - defines reliable avalanche initiation threshold for consistent clamping onset
VWM 17.1 V - maximum continuous reverse working voltage before significant leakage begins
VC @ IPPM ≤27.7 V at 14.4 A - clamping voltage during 10/1000 μs transient, limiting stress on downstream ICs
PPPM 400 W - peak transient energy absorption capability without failure under standardized surge waveform
IFSM 40 A - single half-sine surge rating (8.3 ms), supporting protection of 12 V automotive supply rails
TJ max +175 °C - enables operation in high-temperature environments such as engine control units and industrial motor drives
RθJL 66 °C/W - junction-to-lead thermal resistance, critical for estimating temperature rise under sustained power dissipation

Pinout & Package

Package: DO-41 (DO-204AL), axial-leaded, molded epoxy body with matte tin-plated leads; meets UL 94 V-0 flammability rating and J-STD-002 solderability requirements. Cathode indicated by color band on one end.

Pin/Terminal Circuit Role Design Meaning
Anode Forward conduction terminal Connected to lower-potential side (e.g., ground or return path) in unidirectional protection configuration
Cathode Avalanche clamping terminal Connected to protected line (e.g., 12 V rail or sensor output); color band identifies this end

Key Features

Feature Design Value
Glass-passivated chip junction Enables stable, repeatable avalanche characteristics and long-term reliability under repetitive surge stress
400 W peak pulse power (10/1000 μs) Supports robust protection against ISO 7637-2 Pulse 1/2a/5a and IEC 61000-4-5 Level 3 surges
AEC-Q101 qualified (HE3 variant) Validated for automotive applications including powertrain and body electronics requiring extended temperature and life testing
Low clamping ratio (VC/VBR ≈ 1.39) Minimizes voltage overshoot during clamping, reducing risk of latch-up or damage to 24 V-rated interface ICs
UL 94 V-0 compliant molding Ensures flame-retardant housing for safety-critical industrial and transportation equipment

Applications

Automotive Power Supply Protection Industrial Sensor Interface Protection

Use Scenario: Protecting 12 V battery-fed ECUs from load dump transients (ISO 16750-2) and alternator ripple.

IC Role / Device Role / Timing Role: Unidirectional TVS placed between power rail and ground, clamping surges within nanoseconds.

Use Value: Limits voltage excursion to ≤27.7 V during 14.4 A transients, preventing damage to LDO regulators and CAN transceivers.

Use Scenario: Shielding analog outputs of pressure/temperature sensors from ESD and cable discharge events.

IC Role / Device Role / Timing Role: Low-capacitance TVS connected across signal and ground pins near connector entry point.

Use Value: Sub-1 ns response ensures clamping occurs before sensitive op-amp inputs exceed absolute maximum ratings.

Consumer Power Adapter Input Stage MOSFET Gate Driver Protection

Use Scenario: Safeguarding AC-DC adapter primary-side rectifier and controller ICs against lightning-induced surges.

IC Role / Device Role / Timing Role: TVS installed across bulk capacitor input to absorb differential-mode transients.

Use Value: 400 W rating handles 1.2/50 μs surge waveforms per IEC 61000-4-5, maintaining system uptime.

Use Scenario: Preventing gate oxide rupture in N-channel power MOSFETs due to inductive turn-off spikes.

IC Role / Device Role / Timing Role: Unidirectional TVS placed between gate and source, conducting only during negative-going spikes.

Use Value: Clamps gate-source voltage to ≤27.7 V, staying below typical 30 V VGS(max) limit of logic-level MOSFETs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient voltage suppression applications.

Alternative Part Technical Difference Application Difference Selection Advice
SMBJ20A DO-214AA package (SMB), 200 W rating, lower IPPM (12.3 A), same VBR range Surface-mount footprint; better suited for automated assembly but lower surge capacity Select SMBJ20A when board space is limited and peak surge energy is ≤200 W
1.5KE20A Same DO-41 package, higher 1500 W rating, larger junction, higher VC (32.4 V) Designed for higher-energy transients; less precise clamping for low-voltage ICs Choose 1.5KE20A when protecting 24 V systems where tighter clamping margin is less critical than energy handling

Compared with P4KE20-E3/73, SMBJ20A offers SMT compatibility at reduced surge capability, while 1.5KE20A trades clamping precision for higher energy absorption - making P4KE20-E3/73 optimal for cost-sensitive through-hole designs requiring balanced clamping performance and reliability in 12–24 V systems.

Availability

P4KE20-E3/73 is available at Aetrix Electronics and suitable for automotive electronics, industrial sensor modules, and consumer power adapters requiring stable component supply and RoHS-compliant sourcing.

Supply support for P4KE20-E3/73 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, MOSFETs, optoelectronics, and passive components with emphasis on reliability and automotive qualification.

The P4KE20-E3/73 belongs to Vishay's TRANSZORB® TVS family, engineered specifically for cost-effective, high-volume transient suppression in power supply inputs, signal lines, and interface ports across automotive and industrial markets.

FAQ

What is the polarity configuration of the P4KE20-E3/73?

The P4KE20-E3/73 is a unidirectional TVS diode, meaning it conducts in forward bias like a standard diode and clamps reverse transients above its breakdown voltage. The cathode is marked by a color band on the DO-41 package body, and it must be oriented with cathode toward the protected line and anode to ground or reference potential. This configuration ensures proper clamping behavior during negative-going voltage excursions.

Does the P4KE20-E3/73 meet automotive qualification standards?

The P4KE20-E3/73 itself is RoHS-compliant commercial-grade; however, its HE3-suffix variant (P4KE20AHE3/73) is explicitly AEC-Q101 qualified. For automotive applications requiring formal qualification, the HE3 version should be selected. Both share identical electrical specs and DO-41 packaging, differing only in process controls and test screening per AEC-Q101 stress requirements.

What is the maximum clamping voltage of the P4KE20-E3/73 under surge conditions?

The P4KE20-E3/73 has a maximum clamping voltage (VC) of 27.7 V at 14.4 A peak pulse current (IPPM) using the standard 10/1000 μs waveform. This value is guaranteed across temperature and represents the upper limit of voltage seen by downstream components during transient events - critical for ensuring compatibility with 30 V-rated ICs and MOSFETs.

Can the P4KE20-E3/73 be used in bidirectional protection circuits?

No - the P4KE20-E3/73 is strictly unidirectional. Bidirectional protection requires a CA-suffix part such as P4KE20CA, which has symmetrical breakdown in both directions and no polarity marking. Using P4KE20-E3/73 in a bidirectional configuration would result in unintended forward conduction during positive transients, potentially damaging the device or failing to suppress surges.

What is the thermal resistance from junction to lead for the P4KE20-E3/73?

The P4KE20-E3/73 has a typical junction-to-lead thermal resistance (RθJL) of 66 °C/W, measured with lead length of 10 mm. This parameter is essential for estimating junction temperature rise during sustained power dissipation or repetitive surges, especially in enclosed or high-ambient-temperature environments like engine compartments or sealed industrial enclosures.

P4KE20-E3/73 Specifications

Product attributes
Attribute value
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package/Case:
DO-204AL, DO-41, Axial
Series:
TransZorb®
Packaging:
Tape & Box (TB)
Product Status:
Obsolete
Type:
Zener
Unidirectional Channels:
1
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
16.2V
Voltage - Breakdown (Min):
18V
Voltage - Clamping (Max) @ Ipp:
29.1V
Current - Peak Pulse (10/1000µs):
13.7A
Power - Peak Pulse:
400W
Power Line Protection:
No
Applications:
General Purpose
Capacitance @ Frequency:
-
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
DO-204AL (DO-41)

P4KE20-E3/73 FAQ

1.How can I place an order for P4KE20-E3/73 through Aetrix?

Please submit a Request for Quotation (RFQ) for P4KE20-E3/73 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for P4KE20-E3/73 reliable?

The price and inventory of P4KE20-E3/73 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for P4KE20-E3/73 is usually 5 days.

3.What payment methods are accepted for P4KE20-E3/73?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for P4KE20-E3/73 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for P4KE20-E3/73?

P4KE20-E3/73 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your P4KE20-E3/73 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for P4KE20-E3/73?

For technical support, including P4KE20-E3/73 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your P4KE20-E3/73 requirements.

6.How does Aetrix verify that P4KE20-E3/73 is sourced from the original manufacturer or authorized distributors?

All P4KE20-E3/73 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that P4KE20-E3/73 meets industry standards.

7.What is the process for return or replacement of P4KE20-E3/73?

All P4KE20-E3/73 units undergo pre-shipment inspection (PSI). If there is an issue with P4KE20-E3/73, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The P4KE20-E3/73 part is unused and in its original packaging.

Return procedure for P4KE20-E3/73:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

P4KE20-E3/73 Tags

  • P4KE20-E3/73
  • P4KE20-E3/73 PDF
  • P4KE20-E3/73 Datasheet
  • P4KE20-E3/73 Specifications
  • P4KE20-E3/73 Images
  • Vishay General Semiconductor - Diodes Division
  • Vishay General Semiconductor - Diodes Division P4KE20-E3/73
  • Buy P4KE20-E3/73
  • P4KE20-E3/73 Price
  • P4KE20-E3/73 Distributor
  • P4KE20-E3/73 Supplier
  • P4KE20-E3/73 Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER