My Inquiry
My Account
Vishay General Semiconductor - Diodes Division P4SMA110AHE3/5A
- Part No.:
- P4SMA110AHE3/5A
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AC, SMA
- Datasheet:
-
P4SMA110AHE3/5A.pdf
- Description:
- TVS DIODE 94VWM 152VC DO214AC
- Quantity:
- Payment:
- Shipping:
Inventory:2,118
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
P4SMA110AHE3/5A from Vishay General Semiconductor is a unidirectional surface-mount Transient Voltage Suppressor (TVS) diode in SMA (DO-214AC) package, rated for 110 V breakdown voltage (VBR = 105–116 V at IT = 1.0 mA), 152 V maximum clamping voltage (VC) at 2.0 A peak pulse current (IPPM), and 400 W peak pulse power (10/1000 µs waveform). It protects MOSFETs, ICs, and sensor signal lines against inductive switching transients in industrial and automotive electronics.
For engineers reviewing the P4SMA110AHE3/5A datasheet, P4SMA110AHE3/5A pinout, P4SMA110AHE3/5A application, or P4SMA110AHE3/5A equivalent, this device delivers AEC-Q101 qualification, low incremental surge resistance, fast response time, and RoHS-compliant matte tin-plated leads suitable for automated SMT assembly on consumer, telecom, and embedded control systems.
Technical Context
This unidirectional TVS operates with a cathode-band polarity marking and exhibits a 0.107 %/°C temperature coefficient of VBR, ensuring stable clamping over temperature. Its glass-passivated junction enables robust surge handling up to 40 A IFSM (8.3 ms half-sine) and 150 °C maximum junction temperature.
The device is rated for 3.3 W steady-state power dissipation at TA = 50 °C on infinite heatsink, with thermal resistance RθJA = 120 °C/W and RθJL = 30 °C/W. It meets MSL Level 1 per J-STD-020 and is qualified to AEC-Q101 for automotive underhood applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VBR (min/max) | 105 V / 116 V at 1.0 mA test current - defines precise voltage threshold where avalanche conduction begins |
| VWM | 94.0 V - maximum continuous reverse working voltage before leakage exceeds 1.0 µA |
| VC @ IPPM | 152 V at 2.0 A - clamped voltage during 10/1000 µs transient, limiting stress on downstream circuitry |
| PPPM | 400 W - peak pulse power handling capability under standard lightning/surge waveform |
| IFSM | 40 A - non-repetitive forward surge current rating (8.3 ms half-sine), critical for inrush protection |
| TJ max. | 150 °C - maximum junction temperature enabling operation in high-ambient automotive and industrial environments |
| Package | SMA (DO-214AC) - industry-standard surface-mount outline with 5.0 mm × 5.0 mm copper pad thermal layout |
Pinout & Package
Package: SMA (DO-214AC), molded epoxy case meeting UL 94 V-0 flammability rating; matte tin-plated leads solderable per J-STD-002 and JESD 22-B102; cathode identified by band marking.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Current entry terminal in forward bias | Connected to system ground or low-side reference in unidirectional TVS configuration |
| Cathode | Current exit terminal in forward bias; marked with band | Connected to protected line (e.g., signal rail or power input) - clamps to ground when overvoltage occurs |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Validated reliability for automotive underhood applications including engine control and body electronics |
| 400 W peak pulse power (10/1000 µs) | Robust suppression of ISO 7637-2 pulse 1, 2a, 3a/b, and IEC 61000-4-5 surges without degradation |
| Glass-passivated junction | Enhanced long-term stability and reduced parameter drift under repeated surge stress |
| MSL Level 1 (260 °C peak reflow) | Compatible with standard lead-free SMT reflow profiles without moisture-related failure risk |
| Low clamping ratio (VC/VBR ≈ 1.42) | Minimizes overvoltage exposure to protected ICs while maintaining margin above VWM |
Applications
| Automotive Power Line Protection | Industrial Sensor Signal Conditioning |
|---|---|
Use Scenario: Protecting 12 V/24 V power rails in engine control units (ECUs) and body control modules (BCMs) from load dump and inductive kickback. IC Role / Device Role / Timing Role: Unidirectional TVS placed between supply rail and chassis ground to clamp transients exceeding 94 V. Use Value: Limits voltage to ≤152 V during 400 W surges, preventing damage to microcontrollers and CAN transceivers operating at 5 V or 3.3 V logic levels. |
Use Scenario: Shielding analog output lines (e.g., 4–20 mA current loops or 0–10 V sensors) in factory automation PLCs and motor drives. IC Role / Device Role / Timing Role: TVS connected across signal and return path to suppress ESD and switching noise coupled into sensor interfaces. Use Value: Clamps fast transients within nanoseconds while adding <1 pF junction capacitance - preserving signal integrity and bandwidth. |
| Telecom DC Power Input | Consumer Device USB/Power Port |
Use Scenario: Safeguarding primary DC input (e.g., 48 V PoE or AC/DC adapter outputs) in base station radios and network switches. IC Role / Device Role / Timing Role: Standoff-rated TVS installed upstream of DC-DC converters to absorb repetitive surges from grid coupling or lightning-induced induction. Use Value: Withstands 0.01 % duty cycle repetitive 400 W pulses and maintains <1 µA leakage at 94 V - minimizing standby power loss. |
Use Scenario: Adding secondary-level surge immunity to USB-C PD ports and external power inputs in smart home hubs and portable medical devices. IC Role / Device Role / Timing Role: Low-profile SMA-packaged TVS placed adjacent to connector to intercept ESD (IEC 61000-4-2 ±15 kV contact) before reaching PMIC or battery charger IC. Use Value: AEC-Q101 qualification ensures consistent performance across temperature extremes encountered in uncontrolled indoor environments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ110A | Same VBR range (105–116 V), but SMB package (DO-214AA); 600 W PPPM; higher IPPM (3.3 A) | Larger footprint; better thermal dissipation but incompatible with ultra-dense layouts requiring SMA | Select SMBJ110A only if board space allows larger package and higher surge margin is required |
| 1.5SMC110A | Same VBR and unidirectional function, but SMC (DO-214AB) package; 1500 W PPPM; VC = 177 V at 8.5 A | Higher clamping voltage and significantly larger thermal mass - suited for primary-level protection, not signal-line refinement | Choose 1.5SMC110A for front-end bulk protection; retain P4SMA110AHE3/5A for secondary-stage precision clamping |
Compared with SMBJ110A and 1.5SMC110A, the P4SMA110AHE3/5A offers optimal balance of compact SMA footprint, AEC-Q101 qualification, and tight 152 V clamping - making it preferred for space-constrained, automotive-grade secondary protection where layout density and thermal management are jointly critical.
Availability
P4SMA110AHE3/5A is available at Aetrix Electronics and suitable for automotive ECUs, industrial sensor nodes, telecom power supplies, and consumer USB-C power delivery systems requiring stable component supply with full traceability and lifecycle continuity.
Supply support for P4SMA110AHE3/5A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, TVS, MOSFETs, and optoelectronics with emphasis on reliability, efficiency, and application-specific optimization.
The P4SMA Series is designed for high-reliability transient suppression in automotive, industrial, and telecom infrastructure - delivering standardized surge robustness in compact surface-mount packages with AEC-Q101 and RoHS compliance built-in.
FAQ
What is the maximum clamping voltage of the P4SMA110AHE3/5A under a 10/1000 µs surge?
The P4SMA110AHE3/5A has a maximum clamping voltage (VC) of 152 V at 2.0 A peak pulse current (IPPM) under the standard 10/1000 µs waveform. This value is measured per Figure 1 in Vishay document 88367 and ensures downstream components experience limited overvoltage stress during transient events. The P4SMA110AHE3/5A maintains this clamping performance across its specified operating temperature range.
Is the P4SMA110AHE3/5A qualified for automotive applications?
Yes, the P4SMA110AHE3/5A is AEC-Q101 qualified, as confirmed by the "HE3" suffix in its ordering code and documented in Vishay's P4SMA series datasheet revision 09-Jan-2024. This qualification covers stress tests including temperature cycling, humidity bias, and mechanical shock - validating suitability for automotive underhood and cabin electronics. The P4SMA110AHE3/5A meets these requirements in its SMA (DO-214AC) package.
What does the "HE3/5A" suffix indicate in P4SMA110AHE3/5A?
The "HE3" suffix denotes RoHS-compliant construction with AEC-Q101 qualification, while "/5A" specifies packaging in 13-inch diameter plastic tape and reel containing 7500 units. This format supports high-volume SMT placement and aligns with Vishay's ordering convention for automotive-grade parts. The P4SMA110AHE3/5A thus combines reliability certification with production-ready logistics.
How does the P4SMA110AHE3/5A compare to bidirectional TVS diodes like P4SMA110CA?
The P4SMA110AHE3/5A is unidirectional and features a cathode band for polarity identification, whereas P4SMA110CA is bidirectional with no polarity marking and symmetric breakdown in both directions. The P4SMA110AHE3/5A is intended for DC rail protection where polarity is fixed; using it in AC or floating signal paths would require careful circuit analysis. Its VBR and VC values apply only in reverse bias.
What is the thermal resistance and power derating behavior of the P4SMA110AHE3/5A?
The P4SMA110AHE3/5A has a typical junction-to-ambient thermal resistance (RθJA) of 120 °C/W and junction-to-lead (RθJL) of 30 °C/W. Its 400 W peak pulse power rating is derated linearly above TA = 25 °C per Figure 2 in the datasheet, dropping to zero at ~150 °C ambient. For continuous operation, the 3.3 W power dissipation limit applies at TA = 50 °C on infinite heatsink. The P4SMA110AHE3/5A must be mounted on minimum recommended 5.0 mm × 5.0 mm copper pads for rated performance.
P4SMA110AHE3/5A Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AC, SMA
- Series:
- P4SMA, TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Discontinued at Digi-Key
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 94V
- Voltage - Breakdown (Min):
- 105V
- Voltage - Clamping (Max) @ Ipp:
- 152V
- Current - Peak Pulse (10/1000µs):
- 2A
- Power - Peak Pulse:
- 300W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -65°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AC (SMA)
P4SMA110AHE3/5A FAQ
1.How can I place an order for P4SMA110AHE3/5A through Aetrix?
Please submit a Request for Quotation (RFQ) for P4SMA110AHE3/5A on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for P4SMA110AHE3/5A reliable?
The price and inventory of P4SMA110AHE3/5A are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for P4SMA110AHE3/5A is usually 5 days.
3.What payment methods are accepted for P4SMA110AHE3/5A?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for P4SMA110AHE3/5A transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for P4SMA110AHE3/5A?
P4SMA110AHE3/5A orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your P4SMA110AHE3/5A order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for P4SMA110AHE3/5A?
For technical support, including P4SMA110AHE3/5A datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your P4SMA110AHE3/5A requirements.
6.How does Aetrix verify that P4SMA110AHE3/5A is sourced from the original manufacturer or authorized distributors?
All P4SMA110AHE3/5A products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that P4SMA110AHE3/5A meets industry standards.
7.What is the process for return or replacement of P4SMA110AHE3/5A?
All P4SMA110AHE3/5A units undergo pre-shipment inspection (PSI). If there is an issue with P4SMA110AHE3/5A, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The P4SMA110AHE3/5A part is unused and in its original packaging.
Return procedure for P4SMA110AHE3/5A:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
P4SMA110AHE3/5A Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
