My Inquiry
My Account
Vishay General Semiconductor - Diodes Division P4SMA110AHM3_A/H
- Part No.:
- P4SMA110AHM3_A/H
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AC, SMA
- Datasheet:
-
P4SMA110AHM3_A/H.pdf
- Description:
- TVS DIODE 94VWM 152VC DO214AC
- Quantity:
- Payment:
- Shipping:
Inventory:6,796
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
P4SMA110AHM3_A/H from Vishay General Semiconductor is a unidirectional surface-mount Transient Voltage Suppressor (TVS) diode in SMA (DO-214AC) package, rated for 110 V breakdown voltage (VBR = 105–116 V at IT = 1.0 mA), 152 V maximum clamping voltage (VC) at 2.0 A peak pulse current (IPPM), and 400 W peak pulse power (10/1000 µs waveform). It protects MOSFETs, ICs, and sensor signal lines in automotive and industrial power supply rails.
For engineers reviewing the P4SMA110AHM3_A/H datasheet, P4SMA110AHM3_A/H pinout, P4SMA110AHM3_A/H application, or P4SMA110AHM3_A/H equivalent, key selection criteria include clamping performance under 10/1000 µs transients, AEC-Q101 qualification for automotive use, unidirectional polarity with cathode band marking, and thermal resistance (RθJA = 120 °C/W) on standard 0.2" × 0.2" copper pads.
Technical Context
This TVS diode operates as a voltage-clamped shunt protector: when transient voltage exceeds its standoff voltage (VWM = 94.0 V), it avalanches rapidly to limit downstream voltage to ≤152 V. Its glass-passivated junction ensures stable breakdown and low leakage (<1.0 µA at VWM).
Designed for automated SMT assembly, it meets MSL Level 1 per J-STD-020 (peak reflow 260 °C), features matte tin-plated leads compliant with J-STD-002, and is halogen-free and RoHS-compliant (HM3 suffix). The device is AEC-Q101 qualified for automotive-grade reliability.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VBR (min/max) | 105 V / 116 V at 1.0 mA test current - defines precise avalanche initiation threshold for reliable overvoltage triggering |
| VWM | 94.0 V - maximum continuous reverse operating voltage before leakage exceeds 1.0 µA; sets safe DC rail margin |
| VC @ IPPM | 152 V at 2.0 A - clamped voltage during 10/1000 µs surge; determines protected circuit's worst-case stress level |
| PPPM | 400 W (≤91 V); 300 W (>91 V) - peak transient energy handling capability on standard PCB pad layout |
| IFSM | 40 A (8.3 ms half-sine) - surge current rating for unidirectional forward conduction during fault events |
| TJ max. | +150 °C - maximum junction temperature; enables operation in under-hood automotive environments |
| RθJA | 120 °C/W - thermal resistance from junction to ambient on minimal copper pads; informs derating above 25 °C |
Pinout & Package
Package: SMA (DO-214AC), surface-mount, low-profile plastic case with molded UL 94 V-0 compound. Cathode indicated by a band on the body; anode is unmarked end.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Cathode (banded end) | Transient current sink | Connected to protected line; conducts avalanche current to ground during overvoltage events |
| Anode (unbanded end) | Reference node | Typically tied to system ground or lower-potential rail; completes shunt path for clamping |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Validated for automotive applications including engine control units and ADAS sensor interfaces |
| 400 W peak pulse power (10/1000 µs) | Withstands high-energy transients common in 12 V/24 V vehicle power systems without degradation |
| Glass passivated junction | Ensures stable VBR tolerance (±5 %) and low parametric drift over temperature and lifetime |
| MSL Level 1 moisture sensitivity | Enables direct placement into reflow without baking; supports high-yield automated manufacturing |
| Halogen-free & RoHS-compliant (HM3) | Meets global environmental compliance requirements for automotive and industrial end equipment |
Applications
| Automotive Power Rail Protection | Industrial Sensor Signal Line Clamping |
|---|---|
Use Scenario: Protecting 12 V battery-fed ECUs against load dump and ISO 7637-2 pulses. IC Role / Device Role / Timing Role: Unidirectional shunt TVS placed between power rail and chassis ground. Use Value: Clamps transients to ≤152 V within nanoseconds, preventing damage to downstream PMICs and microcontrollers. |
Use Scenario: Shielding analog outputs of pressure/temperature sensors from ESD and inductive switching noise. IC Role / Device Role / Timing Role: Low-capacitance (<50 pF typical) TVS on differential or single-ended signal traces. Use Value: Limits voltage excursions to safe levels while preserving signal integrity due to fast response and low leakage (<1 µA). |
| Telecom DC Power Input Stage | Consumer Appliance Motor Drive Protection |
Use Scenario: Safeguarding PoE-powered switch ports and base station DC inputs from lightning-induced surges. IC Role / Device Role / Timing Role: Primary-level TVS on 48 V input rail upstream of DC/DC converters. Use Value: Handles repetitive 300 W surges (duty cycle 0.01 %) without thermal runaway, supporting robust field deployment. |
Use Scenario: Suppressing back-EMF spikes from brushed DC motors in washing machines and HVAC blowers. IC Role / Device Role / Timing Role: Unidirectional clamp across motor terminals or H-bridge FET drains. Use Value: Absorbs 40 A 8.3 ms surge currents (IFSM) without failure, extending MOSFET lifetime. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ110A | Same VBR range (105–116 V), but SMB package (DO-214AA); higher RθJA (100 °C/W) and lower IPPM (1.9 A) | Less board space efficiency; lower surge current handling on identical pad layout | Select when existing layout uses SMB footprint or requires slightly higher thermal mass |
| 1.5SMC110A | Same VBR, but larger SMC (DO-214AB) package; higher PPPM (1500 W), higher IPPM (13.3 A) | Overqualified for compact designs; requires larger PCB area and higher cost | Choose only if system-level testing demands >400 W surge immunity or extended lifetime under repeated stress |
Compared with SMBJ110A and 1.5SMC110A, P4SMA110AHM3_A/H delivers optimal balance of AEC-Q101 compliance, compact SMA footprint, and validated 400 W transient handling-making it the preferred choice for space-constrained automotive and industrial modules where reliability and manufacturability are critical.
Availability
P4SMA110AHM3_A/H is available at Aetrix Electronics and suitable for automotive electronics, industrial sensor interfaces, and telecom power input stages requiring stable component supply, AEC-Q101 qualification, and consistent TVS performance across production batches.
Supply support for P4SMA110AHM3_A/H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, and protection devices with emphasis on reliability, precision, and automotive-grade validation.
The P4SMA Series targets cost-sensitive yet mission-critical transient suppression in automotive, industrial, and communications systems-designed for high-volume SMT assembly and long-term stability under thermal and electrical stress.
FAQ
What is the clamping voltage of P4SMA110AHM3_A/H at its rated peak pulse current?
The P4SMA110AHM3_A/H has a maximum clamping voltage (VC) of 152 V at 2.0 A peak pulse current (IPPM) under the standard 10/1000 µs waveform. This value is measured with the device mounted on 0.2" × 0.2" copper pads per JEDEC guidelines and defines the upper voltage limit imposed on protected circuitry during transient events. The P4SMA110AHM3_A/H maintains this clamping performance across its specified operating temperature range.
Is P4SMA110AHM3_A/H qualified for automotive applications?
Yes, P4SMA110AHM3_A/H is AEC-Q101 qualified, as confirmed by its HM3 suffix and documentation in Vishay's P4SMA series datasheet (Rev. 09-Jan-2024, Doc. #88367). This qualification covers stress tests including high-temperature operating life, temperature cycling, and ESD, making P4SMA110AHM3_A/H suitable for under-hood and cabin electronics such as body control modules and sensor interfaces.
What does the "HM3" suffix indicate in P4SMA110AHM3_A/H?
The "HM3" suffix in P4SMA110AHM3_A/H denotes halogen-free, RoHS-compliant construction with AEC-Q101 qualification. It also specifies the packaging format: "H" indicates 7-inch tape-and-reel (1800 pcs/reel), and "_A/H" confirms revision level "A" and reel size "H". This distinguishes it from commercial-grade E3/M3 variants and non-automotive HE3/HM3 versions with different revision codes.
How does P4SMA110AHM3_A/H differ from bidirectional P4SMA110CA variants?
P4SMA110AHM3_A/H is unidirectional, featuring a cathode band and conducting only in reverse avalanche mode; it must be oriented with cathode toward the protected line. In contrast, P4SMA110CA is bidirectional, symmetrical, and lacks polarity marking-suitable for AC lines or differential signals. Their VBR, VWM, and VC values differ: P4SMA110CA has lower VBR (100–110 V) and VWM (85.5 V), and clamps at 145 V. P4SMA110AHM3_A/H is not interchangeable with P4SMA110CA without circuit redesign.
What is the maximum operating temperature for P4SMA110AHM3_A/H?
The P4SMA110AHM3_A/H has a maximum junction temperature (TJ) of +150 °C and an operating junction/storage temperature range of –65 °C to +150 °C. Its thermal resistance is RθJA = 120 °C/W on standard 0.2" × 0.2" copper pads. Derating is required above 25 °C ambient; for example, at 85 °C ambient, maximum allowable power dissipation drops to ~1.8 W to maintain TJ ≤ 150 °C. This makes P4SMA110AHM3_A/H suitable for under-dash automotive environments.
P4SMA110AHM3_A/H Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AC, SMA
- Series:
- P4SMA, TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 94V
- Voltage - Breakdown (Min):
- 105V
- Voltage - Clamping (Max) @ Ipp:
- 152V
- Current - Peak Pulse (10/1000µs):
- 2A
- Power - Peak Pulse:
- 400W
- Power Line Protection:
- No
- Applications:
- Telecom
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -65°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AC (SMA)
P4SMA110AHM3_A/H FAQ
1.How can I place an order for P4SMA110AHM3_A/H through Aetrix?
Please submit a Request for Quotation (RFQ) for P4SMA110AHM3_A/H on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for P4SMA110AHM3_A/H reliable?
The price and inventory of P4SMA110AHM3_A/H are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for P4SMA110AHM3_A/H is usually 5 days.
3.What payment methods are accepted for P4SMA110AHM3_A/H?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for P4SMA110AHM3_A/H transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for P4SMA110AHM3_A/H?
P4SMA110AHM3_A/H orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your P4SMA110AHM3_A/H order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for P4SMA110AHM3_A/H?
For technical support, including P4SMA110AHM3_A/H datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your P4SMA110AHM3_A/H requirements.
6.How does Aetrix verify that P4SMA110AHM3_A/H is sourced from the original manufacturer or authorized distributors?
All P4SMA110AHM3_A/H products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that P4SMA110AHM3_A/H meets industry standards.
7.What is the process for return or replacement of P4SMA110AHM3_A/H?
All P4SMA110AHM3_A/H units undergo pre-shipment inspection (PSI). If there is an issue with P4SMA110AHM3_A/H, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The P4SMA110AHM3_A/H part is unused and in its original packaging.
Return procedure for P4SMA110AHM3_A/H:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
P4SMA110AHM3_A/H Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
