Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Vishay General Semiconductor - Diodes Division P4SMA170AHE3/61

Part No.:
P4SMA170AHE3/61
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
TVS Diodes
Package:
DO-214AC, SMA
Datasheet:
AetrixP4SMA170AHE3/61.pdf
Description:
TVS DIODE 145VWM 234VC DO214AC
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:7,701

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

P4SMA170AHE3/61 from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode in the SMA (DO-214AC) package, designed for clamping voltage transients on power and signal lines. It features a 170 V standoff voltage (VWM), 195 V minimum breakdown voltage (VBR), 234 A peak pulse current (IPPM) at 10/1000 µs, and 400 W peak pulse power capability - used to protect MOSFETs, ICs, and sensor interfaces in industrial power supplies and automotive control modules.

For engineers reviewing the P4SMA170AHE3/61 datasheet, P4SMA170AHE3/61 pinout, P4SMA170AHE3/61 application, or P4SMA170AHE3/61 equivalent, key selection criteria include clamping voltage (VC = 234 V), unidirectional polarity with cathode band marking, AEC-Q101 qualification, MSL Level 1 rating, and compatibility with automated SMT placement on 5.0 mm × 5.0 mm copper pads.

Technical Context

The P4SMA170AHE3/61 operates as a unidirectional avalanche diode, leveraging glass-passivated junction technology for stable reverse breakdown behavior under transient overvoltage events. Its clamping action begins at VBR ≥ 195 V and limits voltage to ≤ 234 V at 234 A, with low incremental surge resistance ensuring minimal voltage overshoot during fast transients.

Thermally, it exhibits RθJA = 120 °C/W and RθJL = 30 °C/W, enabling reliable operation up to TJ = +150 °C. The device is rated for 40 A non-repetitive forward surge current (IFSM) and meets J-STD-020 MSL Level 1 with 260 °C reflow peak temperature tolerance.

Key Specifications

Parameter Value and Actual Design Meaning
VWM (Stand-off Voltage)170 V - maximum continuous reverse working voltage before clamping initiates
VBR (Breakdown Voltage)195–215 V at IT = 1 mA - guaranteed avalanche conduction threshold for transient suppression
VC (Clamping Voltage)234 V at IPPM = 234 A (10/1000 µs) - peak voltage seen by protected circuit during worst-case surge
PPPM (Peak Pulse Power)400 W - transient energy absorption capacity under standard 10/1000 µs waveform
ID (Reverse Leakage)1.0 µA max at VWM - negligible standby current, preserving system efficiency
TJ max+150 °C - maximum junction temperature supporting operation in under-hood automotive and industrial environments
AEC-Q101 QualifiedYes - validated for automotive-grade reliability per stress test requirements

Pinout & Package

Package: SMA (DO-214AC), surface-mount, low-profile case with matte tin-plated leads solderable per J-STD-002 and JESD 22-B102. Cathode identified by black band; anode is unmarked end.

Pin/Terminal Circuit Role Design Meaning
AnodeForward current entry / Reverse voltage referenceConnected to lower-potential side of protected line; defines unidirectional conduction path
CathodeAvalanche clamping node / Transient sinkConnected to higher-potential side (e.g., VBUS); conducts surge current to ground during overvoltage

Key Features

Feature Design Value
400 W Peak Pulse Power (10/1000 µs)Enables robust protection against IEC 61000-4-5 Level 4 surges without derating above 91 V
AEC-Q101 QualifiedValidated for automotive powertrain and body electronics requiring extended temperature cycling and humidity exposure
MSL Level 1, 260 °C Reflow CompatibleSupports single-pass lead-free reflow assembly without moisture sensitivity concerns
Glass-Passivated JunctionEnsures stable VBR and low leakage across 1000+ thermal cycles and 10-year field life
Low Incremental Surge ResistanceMinimizes VC overshoot during sub-microsecond transients, critical for protecting fast-switching MOSFET gates

Applications

Automotive Body Control Module (BCM) Industrial PLC Digital Input Protection

Use Scenario: Protects microcontroller GPIOs and CAN transceiver power rails from load-dump and inductive switching transients in 12 V vehicle systems.

IC Role / Device Role / Timing Role: Unidirectional TVS clamps reverse transients on 12 V supply rail while allowing normal forward bias operation.

Use Value: Limits voltage to ≤234 V during 100 V/50 ms load dump, preventing latch-up or gate oxide damage in downstream logic and drivers.

Use Scenario: Shields 24 V digital input channels from field-wiring induced surges caused by relay coil de-energization or ESD events.

IC Role / Device Role / Timing Role: Fast-response avalanche diode placed between input terminal and ground to shunt transient energy before reaching optocoupler input stage.

Use Value: Withstands 400 W pulses without degradation, maintaining >10⁶ surge cycles per IEC 61000-4-5 compliance testing.

Telecom Power Supply DC Bus Sensor Signal Line Protection (e.g., Pressure Sensor)

Use Scenario: Guards primary-side DC bus (e.g., 170 V intermediate bus) in telecom rectifiers against lightning-induced surges and cross-talk coupling.

IC Role / Device Role / Timing Role: Standoff-rated TVS placed across bulk capacitor to clamp overvoltage before it propagates to downstream converters.

Use Value: 170 V VWM matches typical 160–180 V nominal bus, avoiding false triggering while delivering 234 V clamping at full rated surge current.

Use Scenario: Installed on analog output lines (e.g., 4–20 mA loop) of industrial pressure sensors exposed to cable discharge and nearby motor noise.

IC Role / Device Role / Timing Role: Low-leakage (≤1 µA) unidirectional suppressor referenced to loop ground, minimizing signal offset error.

Use Value: Preserves sensor accuracy with <0.01% full-scale error contribution while suppressing ±1 kV ESD per IEC 61000-4-2.

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient suppression applications.

Alternative Part Technical Difference Application Difference Selection Advice
SMAJ170A-E3/5ASame VWM (170 V), identical SMA package, but rated for 400 W only up to 150 V; 300 W above 150 V (vs. 400 W for P4SMA170AHE3/61)Limited peak power at high-voltage nodes; less margin for 170 V bus clamping under repetitive surgesSelect P4SMA170AHE3/61 when full 400 W clamping at 170 V is required for IEC 61000-4-5 compliance.
1.5SMC170AHigher package thermal resistance (RθJA ≈ 150 °C/W vs. 120 °C/W); same VWM/VBR but larger SMC (DO-214AB) footprintRequires PCB layout change; not suitable for space-constrained SMA layoutsChoose P4SMA170AHE3/61 for compact designs needing AEC-Q101 qualification and superior thermal performance in DO-214AC.

Compared with SMAJ170A-E3/5A and 1.5SMC170A, the P4SMA170AHE3/61 delivers full 400 W clamping at its rated 170 V standoff, tighter thermal resistance, and automotive qualification - making it optimal for high-reliability 170 V rail protection where board area and surge margin are constrained.

Availability

P4SMA170AHE3/61 is available at Aetrix Electronics and suitable for automotive body electronics, industrial PLC input stages, telecom DC bus protection, and sensor interface circuits requiring stable component supply with AEC-Q101 validation and RoHS compliance.

Supply support for P4SMA170AHE3/61 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, MOSFETs, optoelectronics, and passive components with emphasis on reliability, precision, and application-specific optimization.

The P4SMA Series targets cost-sensitive, high-volume transient suppression needs in automotive, industrial, and telecom systems - engineered for automated assembly, AEC-Q101 compliance, and consistent clamping performance across temperature and lifetime.

FAQ

What is the clamping voltage of the P4SMA170AHE3/61 at its rated peak pulse current?

The P4SMA170AHE3/61 has a maximum clamping voltage (VC) of 234 V when subjected to its rated peak pulse current (IPPM) of 234 A under the standard 10/1000 µs waveform. This value is measured at TJ = 25 °C and confirms the device's ability to limit transient overvoltage to a predictable, safe level for downstream components.

Is the P4SMA170AHE3/61 qualified for automotive applications?

Yes, the P4SMA170AHE3/61 is AEC-Q101 qualified, as indicated by the "HE3" suffix. It has undergone stress testing per the AEC-Q101 standard for discrete semiconductors, including temperature cycling, humidity bias, and mechanical shock - validating its suitability for automotive body electronics, powertrain subsystems, and infotainment power rails.

What does the "HE3" suffix signify in P4SMA170AHE3/61?

The "HE3" suffix in P4SMA170AHE3/61 denotes RoHS-compliant construction and AEC-Q101 qualification. It distinguishes this variant from commercial-grade "E3" parts and confirms compliance with automotive reliability standards, halogen-free material content, and JESD201 Class 2 whisker resistance.

Can the P4SMA170AHE3/61 be used in bidirectional configurations?

No, the P4SMA170AHE3/61 is a unidirectional TVS diode, as confirmed by its part number ending in "A" (not "CA"). Bidirectional operation requires the "CA" suffix (e.g., P4SMA170CA). Using P4SMA170AHE3/61 in reverse-biased AC applications would result in forward conduction and failure.

What is the maximum operating junction temperature for the P4SMA170AHE3/61?

The P4SMA170AHE3/61 has a maximum operating junction temperature (TJ max) of +150 °C, enabling reliable operation in under-hood automotive environments and high-temperature industrial enclosures. Derating curves in the datasheet (Fig. 2) define allowable power dissipation versus ambient temperature.

P4SMA170AHE3/61 Specifications

Product attributes
Attribute value
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package/Case:
DO-214AC, SMA
Series:
P4SMA, TransZorb®
Packaging:
Tape & Reel (TR)
Product Status:
Discontinued at Digi-Key
Type:
Zener
Unidirectional Channels:
1
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
145V
Voltage - Breakdown (Min):
162V
Voltage - Clamping (Max) @ Ipp:
234V
Current - Peak Pulse (10/1000µs):
1.3A
Power - Peak Pulse:
300W
Power Line Protection:
No
Applications:
-
Capacitance @ Frequency:
-
Operating Temperature:
-65°C ~ 150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
DO-214AC (SMA)

P4SMA170AHE3/61 FAQ

1.How can I place an order for P4SMA170AHE3/61 through Aetrix?

Please submit a Request for Quotation (RFQ) for P4SMA170AHE3/61 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for P4SMA170AHE3/61 reliable?

The price and inventory of P4SMA170AHE3/61 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for P4SMA170AHE3/61 is usually 5 days.

3.What payment methods are accepted for P4SMA170AHE3/61?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for P4SMA170AHE3/61 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for P4SMA170AHE3/61?

P4SMA170AHE3/61 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your P4SMA170AHE3/61 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for P4SMA170AHE3/61?

For technical support, including P4SMA170AHE3/61 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your P4SMA170AHE3/61 requirements.

6.How does Aetrix verify that P4SMA170AHE3/61 is sourced from the original manufacturer or authorized distributors?

All P4SMA170AHE3/61 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that P4SMA170AHE3/61 meets industry standards.

7.What is the process for return or replacement of P4SMA170AHE3/61?

All P4SMA170AHE3/61 units undergo pre-shipment inspection (PSI). If there is an issue with P4SMA170AHE3/61, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The P4SMA170AHE3/61 part is unused and in its original packaging.

Return procedure for P4SMA170AHE3/61:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

P4SMA170AHE3/61 Tags

  • P4SMA170AHE3/61
  • P4SMA170AHE3/61 PDF
  • P4SMA170AHE3/61 Datasheet
  • P4SMA170AHE3/61 Specifications
  • P4SMA170AHE3/61 Images
  • Vishay General Semiconductor - Diodes Division
  • Vishay General Semiconductor - Diodes Division P4SMA170AHE3/61
  • Buy P4SMA170AHE3/61
  • P4SMA170AHE3/61 Price
  • P4SMA170AHE3/61 Distributor
  • P4SMA170AHE3/61 Supplier
  • P4SMA170AHE3/61 Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER