Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Taiwan Semiconductor Corporation P4SMA33H

Part No.:
P4SMA33H
Manufacturer:
Taiwan Semiconductor Corporation
Category:
TVS Diodes
Package:
DO-214AC, SMA
Datasheet:
AetrixP4SMA33H.pdf
Description:
400W, 33V, 10%, UNIDIRECTIONAL,
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,892

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

P4SMA33H from Taiwan Semiconductor is a unidirectional surface-mount Transient Voltage Suppressor (TVS) diode designed for overvoltage protection in DC power lines and signal paths. It features a 29.7–36.3 V breakdown voltage (VBR), 26.8 V working stand-off voltage (VWM), 47.7 V clamping voltage (VC) at 8.8 A peak pulse current, 400 W peak pulse power rating (10/1000 µs), and operates across –55 °C to +150 °C junction temperature range.

For engineers reviewing the P4SMA33H datasheet, P4SMA33H pinout, P4SMA33H application, or P4SMA33H equivalent, key selection criteria include clamping performance under ISO 7637-2 Pulse 1/2a/2b/3a/3b, AEC-Q101 qualification for automotive environments, DO-214AC (SMA) package compatibility with automated placement, and sub-1 ps response time for fast transient suppression.

Technical Context

The P4SMA33H employs a glass-passivated silicon junction optimized for low leakage (<1 µA at VWM) and stable breakdown behavior across temperature, with a VBR temperature coefficient of 0.098 %/°C. Its unidirectional configuration provides asymmetric conduction-low forward voltage (3.5 V at 25 A) during fault conditions and high reverse blocking up to 26.8 V in normal operation.

Designed for single-pulse transient immunity per IEC 61000-4-5 and ISO 7637-2, it delivers 400 W peak power dissipation at TA = 25 °C, derating linearly above that ambient; its 8.8 A peak impulse current (IPPM) corresponds to a clamped voltage of 47.7 V under standardized 10/1000 µs waveform, ensuring predictable voltage limiting during surge events.

Key Specifications

ParameterValue and Actual Design Meaning
VBR min/max29.7 V / 36.3 V - defines guaranteed breakdown initiation window under 1 mA test current
VWM26.8 V - maximum continuous reverse voltage before significant leakage begins
VC@IPPM47.7 V at 8.8 A - clamped voltage during 10/1000 µs surge, directly limits downstream IC stress
PPPM400 W - peak transient power handling capability, critical for automotive load-dump immunity
IR@VWM<1 µA - ensures negligible standby power loss and no interference with high-impedance sensing
TJ range–55 °C to +150 °C - supports under-hood automotive and industrial power supply deployments
Response time<1.0 ps - enables suppression of ESD and fast-edge transients before system damage occurs

Pinout & Package

Package: DO-214AC (SMA), surface-mount, single-diode configuration with cathode band marking. Matte tin-plated leads meet J-STD-002 solderability; polarity is marked on the device body.

Pin/TerminalCircuit RoleDesign Meaning
AnodeForward conduction terminalConnects to lower-potential side (e.g., GND or return path) during clamping
CathodeReverse-blocking terminalConnects to protected line (e.g., 24 V rail); clamps to anode when voltage exceeds VBR

Key Features

FeatureDesign Value
AEC-Q101 qualifiedValidated for automotive-grade reliability including temperature cycling, HTRB, and ESD robustness
Glass passivated junctionEnhances long-term stability and moisture resistance vs. epoxy-passivated alternatives
ISO 7637-2 complianceMeets Pulse 1 (inductive load dump), Pulse 2a/2b (switching transients), and Pulse 3a/3b (line impedance coupling)
Moisture sensitivity level 1Enables standard SMT reflow without baking preconditioning per J-STD-020
RoHS & halogen-freeComplies with IEC 61249-2-21 and EU RoHS Directive 2011/65/EU for green manufacturing

Applications

Automotive Power DistributionIndustrial DC/DC Converters

Use Scenario: Protection of 24 V battery-fed ECUs against load dump and alternator transients.

IC Role / Device Role / Timing Role: Unidirectional TVS placed between power rail and ground to clamp surges exceeding 26.8 V.

Use Value: Limits voltage seen by downstream regulators and microcontrollers to ≤47.7 V during 400 W transients, preventing latch-up or gate oxide failure.

Use Scenario: Input-side surge protection in isolated 48 V-to-12 V buck converters for factory automation.

IC Role / Device Role / Timing Role: Standoff-rated TVS absorbing repetitive switching spikes and EFT bursts on primary-side bus.

Use Value: Maintains <1 µA leakage at 26.8 V, avoiding efficiency loss while delivering sub-1 ps response to fast-rising transients.

LED Driver Power InputsTelecom Power Interface

Use Scenario: Overvoltage safeguard for constant-current LED drivers powered from 36 V PoE-derived supplies.

IC Role / Device Role / Timing Role: Primary-line TVS suppressing induced surges from nearby relay switching or lightning-induced coupling.

Use Value: Clamps to 47.7 V within <1 ps, protecting driver ICs rated for 45 V absolute maximum input.

Use Scenario: Secondary-side protection on 33 V telecom power feeds feeding baseband processors.

IC Role / Device Role / Timing Role: Unidirectional suppressor guarding against hot-swap transients and backplane coupling noise.

Use Value: AEC-Q101 qualification ensures reliability in telecom infrastructure operating at extended temperature ranges.

Equivalent & Alternatives

The following parts are listed as comparable options for similar TVS diode applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
SMBJ33ADO-214AA (SMB) package; 33 V nominal VBR; 600 W PPPM; bidirectional variant availableHigher power rating but larger footprint; requires PCB layout changeSelect SMBJ33A only if higher surge margin is required and board space allows DO-214AA
1.5SMC33ADO-214AB (SMC) package; 33 V nominal VBR; 1500 W PPPM; higher IPPM (42.9 A)Designed for heavy-duty industrial surge; significantly larger thermal mass and footprintChoose 1.5SMC33A for systems requiring >1 kV ESD or lightning-level immunity where size is secondary

Compared with SMBJ33A and 1.5SMC33A, the P4SMA33H offers optimal balance of compact DO-214AC footprint, AEC-Q101 qualification, and precise 26.8 V VWM for 24–36 V systems-making it ideal for space-constrained automotive and industrial modules where 400 W surge handling suffices.

Availability

P4SMA33H is available at Aetrix Electronics and suitable for automotive power distribution, industrial DC/DC converters, LED driver inputs, and telecom power interface applications requiring stable component supply, AEC-Q101 compliance, and surface-mount manufacturability.

Supply support for P4SMA33H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and discrete semiconductor manufacturer headquartered in Hsinchu, Taiwan, serving global automotive, industrial, and consumer markets since 1979.

The P4SMA33H belongs to TSC's AEC-Q101-qualified P4SMAxH series of unidirectional TVS diodes, engineered specifically for robust transient suppression in automotive power networks and industrial power supplies operating up to 150 °C junction temperature.

FAQ

What is the clamping voltage of the P4SMA33H under standard surge conditions?

The P4SMA33H has a maximum clamping voltage (VC) of 47.7 V when subjected to an 8.8 A peak impulse current (IPPM) using the standardized 10/1000 µs waveform. This value is measured at TA = 25 °C and ensures predictable voltage limiting during transient events such as ISO 7637-2 Pulse 1 or EFT bursts. The P4SMA33H maintains this clamping performance across its full operating temperature range.

Is the P4SMA33H suitable for automotive applications?

Yes, the P4SMA33H is AEC-Q101 qualified and explicitly tested to meet ISO 7637-2 Pulse 1, 2a, 2b, 3a, and 3b requirements-making it suitable for automotive power line protection in ECUs, body control modules, and lighting systems. Its –55 °C to +150 °C operating junction temperature range, glass-passivated junction, and moisture sensitivity level 1 rating further validate its suitability for under-hood and chassis-mounted automotive use cases. The P4SMA33H is designed for these environments.

What is the package type and mounting compatibility of the P4SMA33H?

The P4SMA33H uses the DO-214AC (SMA) surface-mount package, with matte tin-plated leads compliant with J-STD-002 solderability standards. It is compatible with standard reflow processes and optimized for high-speed automated placement. The cathode is marked by a band on the body, and its 0.060 g weight and UL 94V-0 molding compound support reliable assembly in high-volume production. The P4SMA33H fits standard SMA footprints without modification.

How does the P4SMA33H compare to bidirectional TVS diodes?

The P4SMA33H is unidirectional and intended for DC line protection where polarity is fixed-such as 24 V supply rails-providing superior reverse leakage performance (<1 µA at 26.8 V) versus bidirectional equivalents. Bidirectional variants (e.g., P4SMA33AH) offer symmetrical clamping but exhibit higher leakage in both directions. For applications with defined polarity and strict low-leakage requirements, the P4SMA33H delivers better system efficiency and noise immunity than bidirectional alternatives.

What is the peak pulse power rating and how is it applied in circuit design?

The P4SMA33H has a peak pulse power rating (PPPM) of 400 W under the 10/1000 µs waveform at TA = 25 °C, derating linearly above that ambient temperature per Figure 2 in the datasheet. In circuit design, this rating determines the maximum transient energy the device can absorb without failure; designers must ensure expected surge waveforms (e.g., ISO 7637-2 Pulse 1) fall within the device's power-time envelope. The P4SMA33H's 400 W rating targets mid-tier automotive and industrial surge profiles.

P4SMA33H Specifications

Product attributes
Attribute value
Manufacturer:
Taiwan Semiconductor Corporation
Package/Case:
DO-214AC, SMA
Series:
P4SMA
Packaging:
Tape & Reel (TR)
Product Status:
Active
Type:
Zener
Unidirectional Channels:
1
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
26.8V
Voltage - Breakdown (Min):
29.7V
Voltage - Clamping (Max) @ Ipp:
47.7V
Current - Peak Pulse (10/1000µs):
8.8A
Power - Peak Pulse:
400W
Power Line Protection:
No
Applications:
-
Capacitance @ Frequency:
-
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
DO-214AC (SMA)

P4SMA33H FAQ

1.How can I place an order for P4SMA33H through Aetrix?

Please submit a Request for Quotation (RFQ) for P4SMA33H on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for P4SMA33H reliable?

The price and inventory of P4SMA33H are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for P4SMA33H is usually 5 days.

3.What payment methods are accepted for P4SMA33H?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for P4SMA33H transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for P4SMA33H?

P4SMA33H orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your P4SMA33H order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for P4SMA33H?

For technical support, including P4SMA33H datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your P4SMA33H requirements.

6.How does Aetrix verify that P4SMA33H is sourced from the original manufacturer or authorized distributors?

All P4SMA33H products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that P4SMA33H meets industry standards.

7.What is the process for return or replacement of P4SMA33H?

All P4SMA33H units undergo pre-shipment inspection (PSI). If there is an issue with P4SMA33H, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The P4SMA33H part is unused and in its original packaging.

Return procedure for P4SMA33H:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

P4SMA33H Tags

  • P4SMA33H
  • P4SMA33H PDF
  • P4SMA33H Datasheet
  • P4SMA33H Specifications
  • P4SMA33H Images
  • Taiwan Semiconductor Corporation
  • Taiwan Semiconductor Corporation P4SMA33H
  • Buy P4SMA33H
  • P4SMA33H Price
  • P4SMA33H Distributor
  • P4SMA33H Supplier
  • P4SMA33H Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER