Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Vishay General Semiconductor - Diodes Division P4SMA39AHE3_A/H

Part No.:
P4SMA39AHE3_A/H
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
TVS Diodes
Package:
DO-214AC, SMA
Datasheet:
AetrixP4SMA39AHE3_A/H.pdf
Description:
TVS DIODE 33.3VWM 53.9VC DO214AC
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,151

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

P4SMA39AHE3_A/H from Vishay General Semiconductor is a unidirectional surface-mount Transient Voltage Suppressor (TVS) diode in SMA (DO-214AC) package, rated for 39 V breakdown voltage (VBR = 37.1–41.0 V at 1 mA), 33.3 V standoff voltage (VWM), and 53.9 V clamping voltage (VC) at 7.4 A peak pulse current - designed to protect MOSFETs, ICs, and sensor signal lines in automotive and industrial power rails against inductive switching transients.

For engineers reviewing the P4SMA39AHE3_A/H datasheet, P4SMA39AHE3_A/H pinout, P4SMA39AHE3_A/H application, or P4SMA39AHE3_A/H equivalent, this AEC-Q101 qualified TVS offers verified 400 W peak pulse power (10/1000 µs), low incremental surge resistance, and MSL Level 1 reflow compatibility - critical for high-reliability automotive ECU and battery management system designs.

Technical Context

This unidirectional TVS operates with a cathode-band polarity marking and leverages glass-passivated junction technology for stable reverse leakage (<1 µA at VWM) and fast response time (<1 ns). Its thermal resistance (RθJA = 120 °C/W) and junction temperature range (–65 to +150 °C) support operation on standard 0.2" × 0.2" copper pads without forced cooling.

The device delivers precise clamping performance: at IPPM = 7.4 A (10/1000 µs), VC = 53.9 V, with a VBR/VWM ratio of ~1.17 and temperature coefficient of 0.100 %/°C - enabling predictable overvoltage protection in 24 V and 36 V automotive subsystems.

Key Specifications

Parameter Value and Actual Design Meaning
VBR (min/max) 37.1 V / 41.0 V at 1 mA - defines reliable conduction onset under transient stress
VWM 33.3 V - maximum continuous reverse operating voltage before leakage exceeds 1 µA
VC @ IPPM 53.9 V at 7.4 A (10/1000 µs) - clamping voltage limiting downstream component stress
PPPM 400 W peak pulse power - sustains 10/1000 µs surges without degradation
IFSM 40 A (8.3 ms half-sine) - supports robust handling of repetitive load-dump events
TJ max +150 °C - enables use in under-hood automotive environments with minimal derating
AEC-Q101 Qualified Yes - validated for automotive electronics per stress test requirements

Pinout & Package

Package: SMA (DO-214AC), surface-mount, matte tin-plated leads, RoHS-compliant and halogen-free (HE3 suffix), MSL Level 1 (260 °C peak reflow).

Pin/Terminal Circuit Role Design Meaning
Anode Forward current entry / transient return path Connected to ground or low-side reference in unidirectional clamp configuration
Cathode Transient voltage sensing / clamping node Connected to protected line (e.g., 24 V rail or sensor input); band-marked end

Key Features

Feature Design Value
400 W peak pulse power (10/1000 µs) Enables single-device protection against ISO 7637-2 Pulse 1/2a/5a transients in 12/24 V systems
Glass passivated chip junction Ensures stable VBR tolerance and low long-term parameter drift under thermal cycling
Low incremental surge resistance Minimizes VC overshoot during fast-rising transients (e.g., <100 ns edges)
AEC-Q101 qualification (HE3 suffix) Validates reliability for automotive control modules, ADAS sensors, and body electronics
MSL Level 1, 260 °C peak reflow Supports standard lead-free SMT assembly without pre-baking or special handling

Applications

Automotive Power Rail Protection Industrial Sensor Interface Protection

Use Scenario: Protecting 24 V supply inputs in engine control units (ECUs) against load dump and inductive kickback.

IC Role / Device Role / Timing Role: Unidirectional TVS clamping transient energy to ground during voltage spikes up to 120 V.

Use Value: Limits rail voltage to ≤53.9 V during 7.4 A surges, preventing damage to downstream DC/DC converters and microcontrollers.

Use Scenario: Safeguarding analog outputs of pressure/temperature sensors in factory automation PLC I/O modules.

IC Role / Device Role / Timing Role: Fast-response shunt protector on 0–10 V or 4–20 mA signal lines exposed to ESD and cable discharge.

Use Value: Clamps transients within <1 ns while maintaining <1 µA leakage at 33.3 V, preserving signal integrity and ADC accuracy.

Telecom DC Power Feeds Consumer Appliance Motor Drive Circuits

Use Scenario: Overvoltage suppression on -48 V telecom rectifier outputs feeding base station RF modules.

IC Role / Device Role / Timing Role: Standoff-rated TVS absorbing repetitive surges from relay switching and lightning-induced coupling.

Use Value: Withstands 400 W pulses at 0.01% duty cycle and maintains VWM stability across –40 to +125 °C ambient.

Use Scenario: Protecting gate drivers and logic ICs in washing machine motor inverters from back-EMF spikes.

IC Role / Device Role / Timing Role: Cathode-to-rail placement clamps positive transients generated during MOSFET turn-off.

Use Value: 40 A surge rating handles repeated 8.3 ms half-sine events from brushed motor commutation without degradation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient suppression applications.

Alternative Part Technical Difference Application Difference Selection Advice
SMAJ39A-E3/5A Same VBR (37.1–41.0 V), identical SMA package, but rated for 400 W only up to 36 V; 39 V version has VC = 60.0 V at 6.7 A Higher clamping voltage reduces protection margin for 24 V systems with tight VIN tolerances Select P4SMA39AHE3_A/H when lower VC (53.9 V vs. 60.0 V) is required to meet downstream IC absolute maximum ratings.
1.5SMC39A Higher power rating (1500 W), DO-214AB package (larger footprint), VC = 60.0 V at 25 A Requires PCB layout change; suited for higher-energy transients where space permits Choose P4SMA39AHE3_A/H for space-constrained automotive modules where 400 W suffices and SMA footprint is mandated.

Compared with SMAJ39A-E3/5A and 1.5SMC39A, P4SMA39AHE3_A/H delivers superior clamping performance in the same compact SMA footprint while meeting AEC-Q101 - making it optimal for cost- and size-sensitive automotive and industrial designs requiring certified reliability.

Availability

P4SMA39AHE3_A/H is available at Aetrix Electronics and suitable for automotive ECUs, industrial sensor interfaces, and telecom power feeds requiring stable component supply, AEC-Q101 compliance, and consistent 400 W transient suppression capability.

Supply support for P4SMA39AHE3_A/H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, and protection devices with emphasis on reliability, efficiency, and automotive-grade qualification.

The P4SMA Series targets high-volume, high-reliability transient suppression in automotive, industrial, and telecom applications - engineered for automated SMT assembly, low-profile mounting, and AEC-Q101 validation from wafer to final test.

FAQ

What is the clamping voltage of P4SMA39AHE3_A/H at its rated peak pulse current?

The P4SMA39AHE3_A/H has a maximum clamping voltage (VC) of 53.9 V at 7.4 A peak pulse current (IPPM) under the standard 10/1000 µs waveform. This value is measured per Figure 1 in the Vishay datasheet 88367 and ensures protected circuits remain below critical overvoltage thresholds during transient events. The P4SMA39AHE3_A/H achieves this with low incremental surge resistance and stable junction characteristics.

Is P4SMA39AHE3_A/H qualified for automotive applications?

Yes, P4SMA39AHE3_A/H is AEC-Q101 qualified, as confirmed by the "HE3" suffix and documentation in Vishay's P4SMA series datasheet (Rev. 09-Jan-2024). It undergoes stress testing for temperature cycling, humidity, and surge robustness required for automotive electronics. The P4SMA39AHE3_A/H is explicitly recommended for engine control units, body controllers, and ADAS sensor modules where certified reliability is mandatory.

What does the "_A/H" suffix in P4SMA39AHE3_A/H indicate?

The "_A/H" suffix in P4SMA39AHE3_A/H denotes the revision code ("A") and packaging format ("H" = 7-inch plastic tape and reel, 1800 units per reel). The "HE3" portion confirms RoHS-compliant, AEC-Q101 qualified construction. This full ordering code distinguishes it from commercial-grade variants (e.g., P4SMA39AE3) and ensures traceability to Vishay's qualified automotive production lot.

Can P4SMA39AHE3_A/H be used in bidirectional configurations?

No, P4SMA39AHE3_A/H is a unidirectional TVS diode, indicated by the "A" (not "CA") suffix and cathode band marking. Bidirectional versions use the "CA" suffix (e.g., P4SMA39CA). Using P4SMA39AHE3_A/H in bidirectional applications would result in forward conduction during negative transients, potentially damaging the device or failing to suppress. Always match polarity to circuit topology - the P4SMA39AHE3_A/H is designed exclusively for cathode-to-line, anode-to-ground placement.

What is the maximum operating junction temperature for P4SMA39AHE3_A/H?

The maximum operating junction temperature (TJ) for P4SMA39AHE3_A/H is +150 °C, as specified in the Absolute Maximum Ratings table of Vishay document 88367. This allows reliable operation in under-hood automotive environments and industrial enclosures without active cooling. Derating begins above 25 °C ambient per Figure 2, and the P4SMA39AHE3_A/H maintains full 400 W pulse capability up to TJ = 125 °C.

P4SMA39AHE3_A/H Specifications

Product attributes
Attribute value
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package/Case:
DO-214AC, SMA
Series:
P4SMA, TransZorb®
Packaging:
Tape & Reel (TR)
Product Status:
Active
Type:
Zener
Unidirectional Channels:
1
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
33.3V
Voltage - Breakdown (Min):
37.1V
Voltage - Clamping (Max) @ Ipp:
53.9V
Current - Peak Pulse (10/1000µs):
7.4A
Power - Peak Pulse:
400W
Power Line Protection:
No
Applications:
-
Capacitance @ Frequency:
-
Operating Temperature:
-65°C ~ 150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
DO-214AC (SMA)

P4SMA39AHE3_A/H FAQ

1.How can I place an order for P4SMA39AHE3_A/H through Aetrix?

Please submit a Request for Quotation (RFQ) for P4SMA39AHE3_A/H on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for P4SMA39AHE3_A/H reliable?

The price and inventory of P4SMA39AHE3_A/H are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for P4SMA39AHE3_A/H is usually 5 days.

3.What payment methods are accepted for P4SMA39AHE3_A/H?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for P4SMA39AHE3_A/H transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for P4SMA39AHE3_A/H?

P4SMA39AHE3_A/H orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your P4SMA39AHE3_A/H order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for P4SMA39AHE3_A/H?

For technical support, including P4SMA39AHE3_A/H datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your P4SMA39AHE3_A/H requirements.

6.How does Aetrix verify that P4SMA39AHE3_A/H is sourced from the original manufacturer or authorized distributors?

All P4SMA39AHE3_A/H products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that P4SMA39AHE3_A/H meets industry standards.

7.What is the process for return or replacement of P4SMA39AHE3_A/H?

All P4SMA39AHE3_A/H units undergo pre-shipment inspection (PSI). If there is an issue with P4SMA39AHE3_A/H, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The P4SMA39AHE3_A/H part is unused and in its original packaging.

Return procedure for P4SMA39AHE3_A/H:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

P4SMA39AHE3_A/H Tags

  • P4SMA39AHE3_A/H
  • P4SMA39AHE3_A/H PDF
  • P4SMA39AHE3_A/H Datasheet
  • P4SMA39AHE3_A/H Specifications
  • P4SMA39AHE3_A/H Images
  • Vishay General Semiconductor - Diodes Division
  • Vishay General Semiconductor - Diodes Division P4SMA39AHE3_A/H
  • Buy P4SMA39AHE3_A/H
  • P4SMA39AHE3_A/H Price
  • P4SMA39AHE3_A/H Distributor
  • P4SMA39AHE3_A/H Supplier
  • P4SMA39AHE3_A/H Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER