Vishay General Semiconductor - Diodes Division P4SMA43AHE3_A/I
- Part No.:
- P4SMA43AHE3_A/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AC, SMA
- Datasheet:
-
P4SMA43AHE3_A/I.pdf
- Description:
- TVS DIODE 36.8VWM 59.3VC DO214AC
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
P4SMA43AHE3_A/I from Vishay General Semiconductor is a unidirectional surface-mount Transient Voltage Suppressor (TVS) diode in SMA (DO-214AC) package, designed for clamping voltage transients on power and signal lines. It features a 43 V breakdown voltage (VBR = 40.9–45.2 V at 1 mA), 36.8 V standoff voltage (VWM), 59.3 V maximum clamping voltage (VC) at 6.7 A peak pulse current, and 400 W peak pulse power rating with 10/1000 µs waveform - used to protect MOSFETs, ICs, and sensor interfaces in automotive and industrial systems.
For engineers reviewing the P4SMA43AHE3_A/I datasheet, P4SMA43AHE3_A/I pinout, P4SMA43AHE3_A/I application, or P4SMA43AHE3_A/I equivalent, key selection criteria include its AEC-Q101 qualification, unidirectional polarity with cathode band marking, low incremental surge resistance, fast response time, and compatibility with automated SMT placement on standard PCB pads.
Technical Context
The P4SMA43AHE3_A/I operates as a unidirectional avalanche diode that enters conduction when reverse voltage exceeds its specified breakdown threshold, diverting transient energy to ground while limiting downstream voltage to ≤59.3 V. Its glass-passivated junction ensures stable VBR tolerance (±5%) and low leakage (<1 µA at VWM).
Thermally, it supports operation from −65 °C to +150 °C junction temperature, with RθJA = 120 °C/W and RθJL = 30 °C/W, enabling reliable performance under repetitive surge conditions when mounted per recommended 0.2" × 0.2" copper pad layout. It meets MSL Level 1 and JESD201 Class 2 whisker resistance requirements.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VBR (min/max) | 40.9 V / 45.2 V at 1 mA - defines precise clamping onset range for overvoltage protection |
| VWM | 36.8 V - maximum continuous reverse operating voltage before leakage rises significantly |
| VC @ IPPM | 59.3 V at 6.7 A - peak clamped voltage during 10/1000 µs transient, directly limiting stress on protected ICs |
| PPPM | 400 W - peak pulse power handling capability under standardized surge waveform |
| IFSM | 40 A - surge current rating for 8.3 ms half-sine wave, supporting robust inrush and switching event immunity |
| TJ max. | +150 °C - enables use in under-hood automotive and high-temperature industrial environments |
| AEC-Q101 | Qualified - certified for automotive-grade reliability including temperature cycling, HTRB, and ESD testing |
Pinout & Package
Package: SMA (DO-214AC), surface-mount, low-profile plastic case with matte tin-plated leads solderable per J-STD-002 and JESD22-B102. Cathode indicated by band marking on unidirectional devices.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry / Reverse voltage reference node | Connected to protected line (e.g., VIN, signal trace); forms clamping path to cathode during overvoltage |
| Cathode | Clamping output / Ground reference terminal | Connected to system ground or low-impedance return path; conducts surge current away from sensitive circuitry |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive applications including engine control units, body electronics, and ADAS sensors |
| 400 W peak pulse power (10/1000 µs) | Handles high-energy transients from inductive load switching without degradation |
| Low clamping ratio (VC/VBR ≈ 1.31) | Minimizes overvoltage margin between clamp and device withstand limits for tighter system protection |
| Glass-passivated junction | Ensures long-term stability of breakdown voltage and leakage current across temperature and life cycles |
| MSL Level 1, 260 °C reflow compatible | Supports standard lead-free SMT assembly without moisture-related popcorning or delamination |
Applications
| Automotive Power Line Protection | Industrial Sensor Interface Protection |
|---|---|
Use Scenario: Protecting 12 V battery-fed ECUs against load dump and alternator ripple transients. IC Role / Device Role / Timing Role: Unidirectional TVS placed between power rail and chassis ground to clamp surges above 36.8 V. Use Value: Limits peak voltage to 59.3 V during 400 W transients, preventing damage to microcontrollers and CAN transceivers. |
Use Scenario: Shielding analog outputs of pressure/temperature sensors from ESD and cable discharge events. IC Role / Device Role / Timing Role: TVS connected across sensor output and ground to absorb ±8 kV contact ESD per IEC 61000-4-2. Use Value: Sub-1 ns response time and <1 µA leakage at 36.8 V preserve signal integrity and measurement accuracy. |
| Telecom DC Power Input Protection | Consumer Device USB Port Protection |
Use Scenario: Safeguarding PoE-powered switches and base stations from lightning-induced surges on 48 V input rails. IC Role / Device Role / Timing Role: Primary clamping device on DC input stage, coordinated with upstream fuses and filters. Use Value: 40 A IFSM rating supports repeated surge events without parameter shift or failure. |
Use Scenario: Adding secondary-level surge suppression on VBUS line of USB-C ports in laptops and docking stations. IC Role / Device Role / Timing Role: Fast-acting unidirectional suppressor placed after primary fuse and before USB controller. Use Value: Low capacitance (typ. <100 pF at VWM) avoids signal integrity degradation on high-speed USB 2.0 data paths. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ43A-E3/52 (Vishay) | Same VBR range but SMB (DO-214AA) package; 600 W PPPM; higher thermal mass | Better suited for higher-energy transients where board space allows larger footprint | Select when surge energy exceeds 400 W or thermal dissipation is critical |
| 1.5KE43A (ON Semiconductor) | Through-hole DO-201 package; same VBR/VC specs; 1500 W PPPM; higher IPPM | Used in legacy designs or prototyping where manual assembly or higher surge margin is required | Choose for cost-sensitive non-SMT applications or when evaluating legacy-to-SMT migration paths |
Compared with SMBJ43A-E3/52 and 1.5KE43A, the P4SMA43AHE3_A/I offers optimized SMT manufacturability, AEC-Q101 qualification, and compact DO-214AC footprint - making it preferred for new automotive and space-constrained industrial designs requiring validated reliability and automated assembly.
Availability
P4SMA43AHE3_A/I is available at Aetrix Electronics and suitable for automotive ECUs, industrial sensor nodes, telecom power supplies, and consumer USB-C power delivery systems requiring stable component supply, AEC-Q101 compliance, and consistent surge immunity performance.
Supply support for P4SMA43AHE3_A/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability, efficiency, and application-specific optimization.
The P4SMA Series is engineered for high-reliability transient suppression in automotive, industrial, and telecom applications - delivering consistent clamping performance, AEC-Q101 validation, and SMT-ready packaging for modern electronics manufacturing.
FAQ
What is the breakdown voltage tolerance for P4SMA43AHE3_A/I?
The P4SMA43AHE3_A/I has a breakdown voltage VBR of 40.9 V to 45.2 V at 1 mA test current, representing a ±5% tolerance around the nominal 43 V rating. This tight tolerance ensures predictable clamping behavior across production lots and temperature ranges, critical for protecting voltage-sensitive components like microcontrollers and analog front-ends in automotive and industrial systems. The P4SMA43AHE3_A/I maintains this specification under defined test conditions per JEDEC standards.
Is P4SMA43AHE3_A/I suitable for automotive applications?
Yes, the P4SMA43AHE3_A/I is AEC-Q101 qualified and explicitly designated for automotive use with the "HE3" suffix indicating RoHS-compliant and AEC-Q101 qualified construction. It undergoes rigorous stress testing including temperature cycling, highly accelerated life testing (HALT), and ESD verification to ensure reliability in harsh environments such as engine compartments and ADAS modules. The P4SMA43AHE3_A/I is commonly deployed in powertrain control units and body electronics where transient immunity is mission-critical.
What is the maximum clamping voltage of P4SMA43AHE3_A/I under surge conditions?
The P4SMA43AHE3_A/I exhibits a maximum clamping voltage VC of 59.3 V at 6.7 A peak pulse current (IPPM) using the industry-standard 10/1000 µs double-exponential waveform. This value defines the upper voltage limit imposed on protected circuitry during transient events and is measured under controlled thermal conditions (TA = 25 °C, mounted on 0.2" × 0.2" copper pads). The P4SMA43AHE3_A/I's low clamping ratio (VC/VBR ≈ 1.31) enhances protection margin for downstream ICs rated to 60 V.
Does P4SMA43AHE3_A/I have bidirectional capability?
No, the P4SMA43AHE3_A/I is a unidirectional TVS diode, indicated by the "A" suffix and cathode band marking. It conducts only in reverse bias above VBR and blocks forward current up to its rated IFSM. Bidirectional variants (e.g., P4SMA43CA) use the "CA" suffix and lack polarity marking. For AC-coupled or differential signal lines requiring symmetrical clamping, the P4SMA43AHE3_A/I must be paired with complementary devices or replaced with a bidirectional part - the P4SMA43AHE3_A/I itself does not provide dual-polarity protection.
What is the thermal resistance of P4SMA43AHE3_A/I?
The P4SMA43AHE3_A/I has a typical junction-to-ambient thermal resistance (RθJA) of 120 °C/W and junction-to-lead resistance (RθJL) of 30 °C/W, measured under standard conditions (TA = 25 °C, mounted on 0.2" × 0.2" copper pads). These values determine how effectively heat generated during surge events dissipates into the PCB and ambient environment. Proper pad layout and copper area are essential to maintain the P4SMA43AHE3_A/I within its −65 °C to +150 °C operating junction temperature range during repetitive transient exposure.
P4SMA43AHE3_A/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AC, SMA
- Series:
- P4SMA, TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 36.8V
- Voltage - Breakdown (Min):
- 40.9V
- Voltage - Clamping (Max) @ Ipp:
- 59.3V
- Current - Peak Pulse (10/1000µs):
- 6.7A
- Power - Peak Pulse:
- 400W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -65°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AC (SMA)
P4SMA43AHE3_A/I FAQ
1.How can I place an order for P4SMA43AHE3_A/I through Aetrix?
Please submit a Request for Quotation (RFQ) for P4SMA43AHE3_A/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for P4SMA43AHE3_A/I reliable?
The price and inventory of P4SMA43AHE3_A/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for P4SMA43AHE3_A/I is usually 5 days.
3.What payment methods are accepted for P4SMA43AHE3_A/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for P4SMA43AHE3_A/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for P4SMA43AHE3_A/I?
P4SMA43AHE3_A/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your P4SMA43AHE3_A/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for P4SMA43AHE3_A/I?
For technical support, including P4SMA43AHE3_A/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your P4SMA43AHE3_A/I requirements.
6.How does Aetrix verify that P4SMA43AHE3_A/I is sourced from the original manufacturer or authorized distributors?
All P4SMA43AHE3_A/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that P4SMA43AHE3_A/I meets industry standards.
7.What is the process for return or replacement of P4SMA43AHE3_A/I?
All P4SMA43AHE3_A/I units undergo pre-shipment inspection (PSI). If there is an issue with P4SMA43AHE3_A/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The P4SMA43AHE3_A/I part is unused and in its original packaging.
Return procedure for P4SMA43AHE3_A/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
P4SMA43AHE3_A/I Tags

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