Vishay General Semiconductor - Diodes Division P4SMA47AHE3_A/I
- Part No.:
- P4SMA47AHE3_A/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AC, SMA
- Datasheet:
-
P4SMA47AHE3_A/I.pdf
- Description:
- TVS DIODE 40.2VWM 64.8VC DO214AC
- Quantity:
- Payment:

- Shipping:

Inventory:8,554
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
P4SMA47AHE3_A/I from Vishay General Semiconductor is a unidirectional surface-mount Transient Voltage Suppressor (TVS) diode in the P4SMA series, designed for clamping voltage transients on power and signal lines. It features a 47 V breakdown voltage (VBR = 44.7–49.4 V at IT = 1.0 mA), 40.2 V stand-off voltage (VWM), 64.8 V maximum clamping voltage (VC) at 6.2 A peak pulse current, and 400 W peak pulse power rating with 10/1000 µs waveform - used to protect MOSFETs, ICs, and sensor signal lines in automotive and industrial power supplies.
For engineers reviewing the P4SMA47AHE3_A/I datasheet, P4SMA47AHE3_A/I pinout, P4SMA47AHE3_A/I application, or P4SMA47AHE3_A/I equivalent, key selection criteria include its AEC-Q101 qualification, SMA (DO-214AC) package compatibility, unidirectional polarity with cathode band marking, and thermal resistance (RθJA = 120 °C/W) for board-level transient suppression design.
Technical Context
This TVS diode operates as a unidirectional clamping device with avalanche breakdown behavior, triggered when reverse voltage exceeds VBR. Its glass-passivated junction ensures stable leakage performance (<1.0 µA at VWM) and fast response time (<1 ns), enabling protection against ESD, inductive switching spikes, and lightning-induced surges.
Rated for 150 °C maximum junction temperature and compliant with J-STD-020 MSL Level 1 (peak reflow 260 °C), the P4SMA47AHE3_A/I supports automated SMT assembly. Its 3.3 W steady-state power dissipation and 40 A non-repetitive forward surge capability (8.3 ms half-sine) support robust operation in 12 V/24 V automotive and industrial DC rails.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VBR (min/max) | 44.7 V / 49.4 V at 1.0 mA test current - defines precise avalanche onset range for reliable clamping threshold |
| VWM | 40.2 V - maximum continuous reverse operating voltage before significant leakage begins |
| VC @ IPPM | 64.8 V at 6.2 A - clamped voltage during 400 W 10/1000 µs transient, limiting downstream stress |
| IPPM | 6.2 A - peak pulse current handling capacity under standardized surge waveform |
| PPPM | 400 W - peak pulse power rating for 10/1000 µs waveform, derated above 25 °C ambient |
| RθJA | 120 °C/W - thermal resistance from junction to ambient, critical for PCB copper pad layout (0.2" × 0.2") |
| TJ max | +150 °C - maximum junction temperature, supporting operation in under-hood automotive environments |
Pinout & Package
Package: SMA (DO-214AC) - surface-mount, low-profile plastic case with matte tin-plated leads, UL 94 V-0 rated molding compound, and polarity indicated by cathode band on unidirectional variants.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward conduction terminal | Connected to lower-potential side of protected line; conducts during forward surge (e.g., reverse battery events) |
| Cathode | Avalanche clamping terminal | Marked with band; connected to higher-potential side; initiates clamping when reverse voltage exceeds VBR |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive-grade reliability including temperature cycling, HTRB, and ESD testing per JEDEC standards |
| Glass passivated junction | Ensures stable VBR tolerance and low leakage (<1 µA) over lifetime and temperature extremes |
| 400 W peak pulse power | Withstands high-energy transients common in 24 V industrial control and automotive power distribution |
| MSL Level 1 moisture sensitivity | Enables standard SMT reflow without baking; compatible with 260 °C peak profile per J-STD-020 |
| Low incremental surge resistance | Minimizes VC overshoot during fast-rising transients, improving protection margin for sensitive ICs |
Applications
| Automotive Power Rail Protection | Industrial Sensor Signal Line Protection |
|---|---|
|
Use Scenario: Suppressing load-dump and jump-start transients on 12 V/24 V vehicle power buses feeding ECUs and body controllers. IC Role / Device Role / Timing Role: Unidirectional TVS clamping device placed between power rail and ground, activated within nanoseconds of overvoltage event. Use Value: Limits rail voltage to ≤64.8 V during 400 W surges, preventing damage to 36 V-rated CAN transceivers and microcontrollers. |
Use Scenario: Protecting analog output lines (e.g., 4–20 mA current loops) of pressure/temperature sensors in factory automation systems. IC Role / Device Role / Timing Role: Standoff-mode protector mounted across signal and return, conducting only during >40.2 V fault conditions. Use Value: Maintains signal integrity below VWM, while clamping induced surges from nearby motor drives to safe levels for ADC front-ends. |
| Telecom DC Power Input Protection | Consumer Device USB Power Port Protection |
|
Use Scenario: Safeguarding primary DC input of PoE-powered network switches against lightning-induced surges on outdoor cabling. IC Role / Device Role / Timing Role: First-stage transient suppressor on 48 V input rail, upstream of DC-DC converters and hot-swap controllers. Use Value: Absorbs up to 400 W energy without degradation, meeting IEC 61000-4-5 Level 3 (1 kV/2 Ω) requirements. |
Use Scenario: Preventing USB-C port damage from electrostatic discharge or accidental 20 V PD adapter misconnection in portable speakers. IC Role / Device Role / Timing Role: Unidirectional clamp between VBUS and GND, leveraging fast <1 ns response to divert ESD pulses. Use Value: Provides 30 kV air-gap ESD immunity per IEC 61000-4-2 while maintaining <1 µA leakage at 5 V nominal operation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ47A-E3/5A | Same VBR (44.7–49.4 V), but lower PPPM = 400 W only at TA ≤ 25 °C; RθJA = 135 °C/W vs. 120 °C/W | Less effective thermal performance on compact PCBs; requires larger copper area for equivalent power handling | Select when cost sensitivity outweighs thermal margin needs and AEC-Q101 is not required |
| 1.5SMC47A | Higher PPPM = 1500 W, DO-214AB package (larger footprint), VC = 77 V at 19.3 A - less precise clamping | Better for high-energy surges but incompatible with space-constrained SMA layouts and tighter VC budgets | Choose only if system-level surge tests exceed 400 W and board real estate allows larger SMC package |
Compared with SMAJ47A-E3/5A and 1.5SMC47A, the P4SMA47AHE3_A/I delivers superior thermal efficiency in the same SMA footprint and AEC-Q101 validation for automotive use - making it optimal for space-limited, high-reliability 24 V rail protection where clamping precision and qualification matter.
Availability
P4SMA47AHE3_A/I is available at Aetrix Electronics and suitable for automotive electronics, industrial sensor interfaces, and telecom power supply designs requiring stable component supply, AEC-Q101 compliance, and consistent 400 W transient suppression performance.
Supply support for P4SMA47AHE3_A/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, and protection devices with emphasis on reliability, power efficiency, and automotive qualification.
The P4SMA series was developed specifically for surface-mount transient suppression in harsh environments, combining high pulse power density, AEC-Q101 validation, and industry-standard SMA packaging for broad adoption in automotive and industrial power systems.
FAQ
What is the breakdown voltage tolerance of the P4SMA47AHE3_A/I?
The P4SMA47AHE3_A/I has a specified breakdown voltage range of 44.7 V to 49.4 V at 1.0 mA test current, representing ±5% tolerance around the nominal 47 V rating. This tight VBR window ensures predictable clamping onset across production lots and temperature ranges, critical for protecting 36 V-rated components in automotive applications. The P4SMA47AHE3_A/I maintains this specification per Vishay Document Number 88367, Revision 09-Jan-2024.
Is the P4SMA47AHE3_A/I suitable for bidirectional transient protection?
No, the P4SMA47AHE3_A/I is a unidirectional TVS diode, identifiable by its cathode band marking and specified parameters (VBR, VWM, VC) for reverse-biased operation only. For bidirectional protection, Vishay offers the P4SMA47CA variant. Using the P4SMA47AHE3_A/I in bidirectional configurations risks forward conduction during positive transients and inadequate clamping - always verify polarity alignment in circuit design for the P4SMA47AHE3_A/I.
Does the P4SMA47AHE3_A/I require derating at elevated ambient temperatures?
Yes, the P4SMA47AHE3_A/I must be derated above 25 °C ambient per Figure 2 in Vishay Document 88367. Its 400 W peak pulse power rating decreases linearly with junction temperature, reaching ~300 W at 85 °C ambient on standard 0.2" × 0.2" copper pads. Designers must apply thermal modeling using RθJA = 120 °C/W and ensure TJ remains ≤150 °C during surge events - a key constraint when applying the P4SMA47AHE3_A/I in enclosed industrial enclosures.
What does the "HE3_A/I" suffix indicate in P4SMA47AHE3_A/I?
The "HE3" denotes RoHS-compliant construction with AEC-Q101 qualification; "A" specifies the revision level per Vishay's internal coding; and "I" indicates packaging in 13" diameter tape-and-reel (7500 units per reel). This full suffix confirms the P4SMA47AHE3_A/I meets automotive reliability standards and is optimized for high-volume SMT assembly - distinguishing it from commercial-grade E3 or M3 variants without AEC-Q101 validation.
How does the P4SMA47AHE3_A/I compare to older P4KE47A through-hole TVS diodes?
The P4SMA47AHE3_A/I replaces through-hole P4KE47A in SMT designs with identical electrical specs (VBR, VC, PPPM) but in a smaller SMA (DO-214AC) package - reducing PCB area by ~60%. It adds AEC-Q101 qualification, MSL Level 1 reflow compatibility, and lower thermal resistance (120 vs. 150 °C/W), enabling higher power density in modern automotive ECUs. Unlike P4KE47A, the P4SMA47AHE3_A/I is not drop-in compatible due to different footprint and soldering requirements.
P4SMA47AHE3_A/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AC, SMA
- Series:
- P4SMA, TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 40.2V
- Voltage - Breakdown (Min):
- 44.7V
- Voltage - Clamping (Max) @ Ipp:
- 64.8V
- Current - Peak Pulse (10/1000µs):
- 6.2A
- Power - Peak Pulse:
- 400W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -65°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AC (SMA)
P4SMA47AHE3_A/I FAQ
1.How can I place an order for P4SMA47AHE3_A/I through Aetrix?
Please submit a Request for Quotation (RFQ) for P4SMA47AHE3_A/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for P4SMA47AHE3_A/I reliable?
The price and inventory of P4SMA47AHE3_A/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for P4SMA47AHE3_A/I is usually 5 days.
3.What payment methods are accepted for P4SMA47AHE3_A/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for P4SMA47AHE3_A/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for P4SMA47AHE3_A/I?
P4SMA47AHE3_A/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your P4SMA47AHE3_A/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for P4SMA47AHE3_A/I?
For technical support, including P4SMA47AHE3_A/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your P4SMA47AHE3_A/I requirements.
6.How does Aetrix verify that P4SMA47AHE3_A/I is sourced from the original manufacturer or authorized distributors?
All P4SMA47AHE3_A/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that P4SMA47AHE3_A/I meets industry standards.
7.What is the process for return or replacement of P4SMA47AHE3_A/I?
All P4SMA47AHE3_A/I units undergo pre-shipment inspection (PSI). If there is an issue with P4SMA47AHE3_A/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The P4SMA47AHE3_A/I part is unused and in its original packaging.
Return procedure for P4SMA47AHE3_A/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
P4SMA47AHE3_A/I Tags

-
ESD9B5.0ST5G
onsemi

-
DESD3V3E1BL-7B
Diodes Incorporated

-
ESD5Z3.3T1G
onsemi

-
D5V0H1B2LP-7B
Diodes Incorporated

-
D5V0P1B2LP-7B
Diodes Incorporated

-
DESD5V0U1BA-7
Diodes Incorporated

-
ESD5Z5.0T1G
onsemi

-
DESD5V0U1BB-7
Diodes Incorporated

-
D12V0L1B2LP-7B
Diodes Incorporated

-
PESD2V0Y1BSFYL
Nexperia USA Inc.

-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage

-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

