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Vishay General Semiconductor - Diodes Division P4SMA51AHE3_A/I
- Part No.:
- P4SMA51AHE3_A/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AC, SMA
- Datasheet:
-
P4SMA51AHE3_A/I.pdf
- Description:
- TVS DIODE 43.6VWM 70.1VC DO214AC
- Quantity:
- Payment:
- Shipping:
Inventory:7,500
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Product details
Overview
P4SMA51AHE3_A/I from Vishay General Semiconductor is a unidirectional surface-mount Transient Voltage Suppressor (TVS) diode in SMA (DO-214AC) package, designed for clamping transient overvoltages on power and signal lines. It features a 43.6 V standoff voltage (VWM), 48.5–53.6 V breakdown voltage (VBR) at 1 mA, 70.1 V maximum clamping voltage (VC) at 5.7 A peak pulse current, and 400 W peak pulse power rating with 10/1000 µs waveform - suitable for protecting MOSFETs and sensor interfaces in automotive ECUs.
For engineers reviewing the P4SMA51AHE3_A/I datasheet, P4SMA51AHE3_A/I pinout, P4SMA51AHE3_A/I application, or P4SMA51AHE3_A/I equivalent, key selection criteria include unidirectional polarity, AEC-Q101 qualification, 150 °C max junction temperature, low incremental surge resistance, and compatibility with automated SMT placement on standard PCB copper pads.
Technical Context
This TVS diode operates as a voltage-clamping protection device that enters avalanche conduction when reverse voltage exceeds its breakdown threshold. Its glass-passivated junction ensures stable leakage performance and fast response time (<1 ns), while the SMA package supports high thermal dissipation via 0.2" × 0.2" copper pads per terminal.
The device complies with AEC-Q101 for automotive use and meets MSL Level 1 per J-STD-020 with 260 °C reflow peak. It delivers 400 W peak pulse power up to 91 V; above that, derated to 300 W, and exhibits a +0.102 %/°C temperature coefficient of VBR, enabling predictable behavior across operating temperatures.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 43.6 V - Maximum continuous reverse working voltage before clamping begins; defines safe operating margin below breakdown. |
| VBR @ IT = 1 mA | 48.5–53.6 V - Measured breakdown range confirming tight tolerance for reliable overvoltage triggering. |
| VC @ IPPM = 5.7 A | 70.1 V - Clamped voltage during 10/1000 µs surge; determines maximum stress imposed on protected downstream circuitry. |
| PPPM | 400 W - Peak pulse power handling capability under standardized surge waveform; validates robustness against IEC 61000-4-5 transients. |
| IFSM | 40 A - Non-repetitive forward surge current rating (8.3 ms half-sine); supports protection during rare high-energy fault events. |
| TJ max | 150 °C - Maximum junction temperature; enables operation in under-hood automotive environments without thermal shutdown. |
| RθJA | 120 °C/W - Junction-to-ambient thermal resistance; informs PCB pad design requirements for sustained power dissipation. |
Pinout & Package
Package: SMA (DO-214AC), surface-mount, molded plastic case with matte tin-plated leads solderable per J-STD-002 and JESD 22-B102. Cathode indicated by band marking.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry / Reverse voltage reference | Connected to lower-potential side of protected line; defines unidirectional conduction path during surge. |
| Cathode | Avalanche clamping node | Banded end; connected to higher-potential side (e.g., VCC rail or signal line); conducts during overvoltage to clamp to VC. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive-grade reliability including temperature cycling, humidity bias, and mechanical shock testing. |
| Glass passivated junction | Ensures stable reverse leakage (<1 µA at VWM) and long-term parameter stability under thermal stress. |
| Low profile SMA package | Enables high-density PCB layouts and compatibility with standard pick-and-place equipment for automated assembly. |
| 400 W peak pulse power (10/1000 µs) | Provides immunity against common industrial and automotive transient threats including load dump and inductive switching spikes. |
| MSL Level 1 moisture sensitivity | Allows unlimited floor life and direct reflow at 260 °C peak without baking preconditioning. |
Applications
| Automotive Power Rail Protection | Industrial Sensor Signal Line Protection |
|---|---|
Use Scenario: Protecting 12 V battery-fed microcontroller power inputs in engine control units against load dump transients. IC Role / Device Role / Timing Role: Unidirectional TVS clamping device placed between VBAT and ground, triggered within nanoseconds upon overvoltage detection. Use Value: Limits voltage seen by downstream LDOs and MCUs to ≤70.1 V during 400 W surges, preventing latch-up or permanent damage. |
Use Scenario: Safeguarding analog output lines of pressure sensors in factory automation systems exposed to EMI and relay switching noise. IC Role / Device Role / Timing Role: Bidirectional-capable unidirectional TVS (used in back-to-back configuration) shunting transients on 4–20 mA current loop outputs. Use Value: Maintains signal integrity by clamping induced spikes to <70.1 V while adding <1 pF junction capacitance at 0 V bias. |
| Telecom DC Power Input Protection | Consumer Device USB Port ESD Protection |
Use Scenario: Securing 48 V DC input of PoE-powered network switches against lightning-induced surges on outdoor cabling. IC Role / Device Role / Timing Role: Primary clamping element in multi-stage protection scheme, absorbing bulk energy before secondary MOV or polymer TVS. Use Value: Handles repetitive 10/1000 µs surges up to 400 W with <0.01 % duty cycle, extending system lifetime in harsh environments. |
Use Scenario: Adding secondary-level surge protection on USB VBUS lines of smart home hubs near front-panel connectors. IC Role / Device Role / Timing Role: Fast-response TVS placed upstream of USB power switch IC to limit transient propagation into SoC power domains. Use Value: Clamps 8 kV contact ESD (IEC 61000-4-2) to <70.1 V within <1 ns, preventing gate oxide rupture in USB power management ICs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ51A-E3/5A | Same SMA package, 43.6 V VWM, but rated for 400 W only up to 91 V; no AEC-Q101 qualification. | Commercial-grade use only; not approved for automotive under-hood deployment. | Select when cost sensitivity outweighs automotive qualification requirements and thermal derating above 91 V is acceptable. |
| 1.5SMC51A | Higher-power SMC package (1500 W), same 43.6 V VWM, but larger footprint and 2× thermal resistance (RθJA = 240 °C/W). | Used where higher single-pulse energy absorption is required, e.g., industrial motor drives. | Choose when board space permits larger package and peak surge energy exceeds 400 W capability of P4SMA51AHE3_A/I. |
Compared with SMAJ51A-E3/5A, P4SMA51AHE3_A/I adds AEC-Q101 qualification and tighter thermal performance for automotive use; compared with 1.5SMC51A, it offers 50 % smaller footprint and superior thermal efficiency on compact PCBs despite lower absolute power rating.
Availability
P4SMA51AHE3_A/I is available at Aetrix Electronics and suitable for automotive electronic control units, industrial sensor interface modules, and telecom DC power supplies requiring stable component supply with AEC-Q101 compliance and SMT manufacturability.
Supply support for P4SMA51AHE3_A/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor designs and manufactures discrete semiconductors including diodes, rectifiers, and TVS devices, with emphasis on reliability, precision, and application-specific performance.
The P4SMA Series targets high-reliability transient suppression in automotive, industrial, and telecom systems, combining AEC-Q101 qualification, low-profile packaging, and tightly controlled clamping parameters for robust system-level ESD and surge protection.
FAQ
What is the maximum clamping voltage of the P4SMA51AHE3_A/I under a 10/1000 µs surge?
The P4SMA51AHE3_A/I has a maximum clamping voltage (VC) of 70.1 V at 5.7 A peak pulse current (IPPM) under the standardized 10/1000 µs waveform. This value is measured per Figure 1 in the Vishay datasheet 88367 and defines the upper voltage limit imposed on protected circuitry during transient events. The P4SMA51AHE3_A/I maintains this clamping performance across its full operating temperature range.
Is the P4SMA51AHE3_A/I qualified for automotive applications?
Yes, the P4SMA51AHE3_A/I is AEC-Q101 qualified, as confirmed by Vishay's ordering code suffix "HE3" and documentation in revision 09-Jan-2024 of datasheet 88367. This qualification covers stress tests including temperature cycling, high-temperature operating life, and unbiased highly accelerated stress testing - making the P4SMA51AHE3_A/I suitable for under-hood and chassis-mounted automotive electronics.
What does the "_A/I" suffix mean in P4SMA51AHE3_A/I?
The "_A/I" suffix in P4SMA51AHE3_A/I indicates two attributes: "A" denotes the revision level for devices from P4SMA6.8A through P4SMA220A, and "I" specifies the packaging format - 13-inch diameter plastic tape and reel containing 7500 units. This matches Vishay's ordering information table on page 3 of datasheet 88367, confirming the P4SMA51AHE3_A/I is supplied in high-volume SMT-ready format.
Can the P4SMA51AHE3_A/I be used in bidirectional configurations?
No, the P4SMA51AHE3_A/I is a unidirectional TVS diode, as indicated by its "A" suffix (vs. "CA" for bidirectional variants like P4SMA51CA). Its cathode band marking and electrical characteristics - including forward surge rating (IFSM = 40 A) - confirm asymmetric conduction. For bidirectional protection, Vishay recommends P4SMA51CA or back-to-back placement of two P4SMA51AHE3_A/I units.
What is the thermal resistance of the P4SMA51AHE3_A/I, and how does it affect PCB layout?
The P4SMA51AHE3_A/I has a typical junction-to-ambient thermal resistance (RθJA) of 120 °C/W when mounted on 0.2" × 0.2" (5.0 mm × 5.0 mm) copper pads per terminal. This value requires adequate copper area and thermal vias for sustained power dissipation; reducing pad size increases RθJA and risks exceeding the 150 °C TJ limit. The P4SMA51AHE3_A/I's low RθJA supports compact thermal design in space-constrained automotive modules.
P4SMA51AHE3_A/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AC, SMA
- Series:
- P4SMA, TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 43.6V
- Voltage - Breakdown (Min):
- 48.5V
- Voltage - Clamping (Max) @ Ipp:
- 70.1V
- Current - Peak Pulse (10/1000µs):
- 5.7A
- Power - Peak Pulse:
- 400W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -65°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AC (SMA)
P4SMA51AHE3_A/I FAQ
1.How can I place an order for P4SMA51AHE3_A/I through Aetrix?
Please submit a Request for Quotation (RFQ) for P4SMA51AHE3_A/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for P4SMA51AHE3_A/I reliable?
The price and inventory of P4SMA51AHE3_A/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for P4SMA51AHE3_A/I is usually 5 days.
3.What payment methods are accepted for P4SMA51AHE3_A/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for P4SMA51AHE3_A/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for P4SMA51AHE3_A/I?
P4SMA51AHE3_A/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your P4SMA51AHE3_A/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for P4SMA51AHE3_A/I?
For technical support, including P4SMA51AHE3_A/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your P4SMA51AHE3_A/I requirements.
6.How does Aetrix verify that P4SMA51AHE3_A/I is sourced from the original manufacturer or authorized distributors?
All P4SMA51AHE3_A/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that P4SMA51AHE3_A/I meets industry standards.
7.What is the process for return or replacement of P4SMA51AHE3_A/I?
All P4SMA51AHE3_A/I units undergo pre-shipment inspection (PSI). If there is an issue with P4SMA51AHE3_A/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The P4SMA51AHE3_A/I part is unused and in its original packaging.
Return procedure for P4SMA51AHE3_A/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
P4SMA51AHE3_A/I Tags
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