Vishay General Semiconductor - Diodes Division P4SMA51AHM3_A/I
- Part No.:
- P4SMA51AHM3_A/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AC, SMA
- Datasheet:
-
P4SMA51AHM3_A/I.pdf
- Description:
- TVS DIODE 43.6VWM 70.1VC DO214AC
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
P4SMA51AHM3_A/I from Vishay General Semiconductor is a unidirectional surface-mount Transient Voltage Suppressor (TVS) diode in SMA (DO-214AC) package, rated for 51 V breakdown voltage (VBR = 48.5–53.6 V at 1 mA), 400 W peak pulse power (10/1000 µs), and 70.1 V maximum clamping voltage (VC) at 5.7 A peak pulse current - deployed for overvoltage protection of MOSFETs, ICs, and sensor signal lines in automotive and industrial power electronics.
For engineers reviewing the P4SMA51AHM3_A/I datasheet, P4SMA51AHM3_A/I pinout, P4SMA51AHM3_A/I application, or P4SMA51AHM3_A/I equivalent, key selection criteria include its AEC-Q101 qualification, 150 °C max junction temperature, low incremental surge resistance, and compatibility with automated SMT assembly on standard 0.2" × 0.2" copper pads.
Technical Context
This unidirectional TVS operates as a clamping device that remains high-impedance below its 43.6 V stand-off voltage (VWM) and rapidly transitions to low-impedance conduction above its 48.5–53.6 V breakdown threshold, limiting transient-induced voltage excursions to ≤70.1 V at 5.7 A. Its glass-passivated junction ensures stable leakage (<1 µA at VWM) and fast response time under ESD or inductive switching events.
Designed for board-level surge immunity per IEC 61000-4-5 (indirect lightning) and ISO 7637-2 (automotive load dump), it delivers 400 W peak pulse power with 0.01% duty cycle derating above 25 °C ambient, supported by thermal resistance RθJA = 120 °C/W and RθJL = 30 °C/W - enabling reliable operation without heatsinking in compact layouts.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VBR (min/max) | 48.5 V / 53.6 V at 1 mA - defines precise voltage threshold where clamping begins; critical for matching protected circuit's absolute maximum rating. |
| VWM | 43.6 V - maximum continuous reverse working voltage; must exceed normal operating voltage of protected line to avoid leakage or power loss. |
| VC @ IPPM | 70.1 V at 5.7 A - clamped voltage during worst-case 10/1000 µs surge; determines actual stress seen by downstream components. |
| PPPM | 400 W - peak pulse power handling capability; enables robust protection against 100 A surges when used with appropriate series impedance. |
| IFSM | 40 A - single half-sine surge current rating (8.3 ms); supports temporary overcurrent events like motor commutation spikes. |
| TJ max | +150 °C - maximum junction temperature; allows operation in under-hood automotive environments and sealed industrial enclosures. |
| AEC-Q101 | Qualified - validated for automotive-grade reliability including temperature cycling, HTRB, and ESD testing per JESD22 standards. |
Pinout & Package
Package: SMA (DO-214AC), surface-mount, low-profile plastic case with matte tin-plated leads solderable per J-STD-002 and JESD 22-B102; polarity indicated by cathode band on unidirectional devices.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Current entry terminal during forward conduction | Connected to ground or lower-potential rail in unidirectional TVS configuration; enables clamping of positive transients to reference. |
| Cathode | Current exit terminal during forward conduction; marked with band | Connected to protected line (e.g., power rail or signal trace); reverse-biased during normal operation, avalanche-conducting during overvoltage. |
Key Features
| Feature | Design Value |
|---|---|
| 400 W peak pulse power (10/1000 µs) | Supports high-energy transients common in 12 V/24 V automotive systems and industrial motor drives without thermal runaway. |
| Glass passivated chip junction | Ensures stable VBR tolerance (±5%), low leakage (<1 µA), and long-term reliability under thermal cycling and humidity exposure. |
| AEC-Q101 qualified (HM3 suffix) | Validated for automotive applications including engine control units, body electronics, and ADAS sensors requiring zero field failure risk. |
| MSL Level 1 (260 °C reflow) | Compatible with standard lead-free SMT reflow profiles without preconditioning; eliminates moisture-related popcorning during assembly. |
| Low incremental surge resistance | Minimizes VC overshoot during fast-rising transients (e.g., ESD), improving protection margin for sensitive CMOS inputs. |
Applications
| Automotive Power Rail Protection | Industrial Sensor Signal Line Protection |
|---|---|
|
Use Scenario: Protecting 12 V battery-fed ECUs from load dump transients up to ±120 V and ISO 7637-2 Pulse 5a/b. IC Role / Device Role: Unidirectional clamping TVS placed between power rail and chassis ground. Use Value: Limits voltage to ≤70.1 V during 400 W surges, preventing damage to MCU power supplies and CAN transceivers. |
Use Scenario: Shielding analog output lines of pressure/temperature sensors from ESD and cable discharge events in factory automation. IC Role / Device Role: Low-capacitance TVS connected between signal line and ground, minimizing signal distortion. Use Value: Clamps 8 kV contact ESD pulses within nanoseconds while adding <1 pF parasitic capacitance at 0 V bias. |
| DC-DC Converter Input Stage | MOSFET Gate Driver Protection |
|
Use Scenario: Safeguarding input stage of buck converters in telecom power supplies subjected to lightning-induced surges on AC/DC front-ends. IC Role / Device Role: Primary overvoltage clamp upstream of input filter capacitors and rectifiers. Use Value: Absorbs 10/1000 µs surges up to 400 W without degradation, maintaining converter uptime in outdoor base stations. |
Use Scenario: Preventing gate oxide rupture in high-side N-channel MOSFETs driven by isolated gate drivers in motor inverters. IC Role / Device Role: TVS placed between gate and source to clamp Miller-induced voltage spikes during switching. Use Value: Responds in <1 ns to limit gate-source voltage to safe levels (<20 V), preserving MOSFET reliability across 100,000+ cycles. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ51A-E3/5A | Same VBR range (48.5–53.6 V), but rated for 400 W only up to 91 V; no AEC-Q101 qualification. | Commercial-grade use only; not suitable for automotive OEM or Tier 1 production programs. | Select if cost sensitivity outweighs automotive qualification requirements and thermal derating above 91 V is irrelevant. |
| 1.5SMC51A | Higher package thermal resistance (RθJA ≈ 150 °C/W), larger SMC (DO-214AB) footprint, same electrical specs. | Requires more PCB area; less suitable for space-constrained modules like ADAS camera housings. | Choose only when existing layout uses SMC pads or higher surge margin beyond 400 W is needed (600 W rating). |
Compared with SMAJ51A-E3/5A and 1.5SMC51A, P4SMA51AHM3_A/I provides AEC-Q101 assurance and optimized thermal performance in the smallest DO-214AC footprint - making it the preferred choice for next-generation automotive and industrial edge devices where reliability, size, and reflow compatibility are jointly constrained.
Availability
P4SMA51AHM3_A/I is available at Aetrix Electronics and suitable for automotive control units, industrial sensor interfaces, and DC-DC converter input stages requiring stable component supply with full traceability and long-term lifecycle support.
Supply support for P4SMA51AHM3_A/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, TVS devices, and optoelectronics with emphasis on high-reliability, high-efficiency solutions.
The P4SMA Series was engineered specifically for board-level transient protection in harsh environments - delivering AEC-Q101-compliant surge immunity in compact surface-mount packages for automotive, industrial, and telecom infrastructure.
FAQ
What is the maximum clamping voltage of the P4SMA51AHM3_A/I under a 10/1000 µs surge?
The P4SMA51AHM3_A/I has a maximum clamping voltage (VC) of 70.1 V at 5.7 A peak pulse current under the standardized 10/1000 µs waveform. This value is measured per Figure 1 in Vishay document 88367 and represents the upper bound of voltage seen by protected circuitry during worst-case transient events - critical for ensuring downstream ICs remain within their absolute maximum ratings.
Is the P4SMA51AHM3_A/I suitable for automotive applications?
Yes, the P4SMA51AHM3_A/I is AEC-Q101 qualified (denoted by the HM3 suffix), meaning it has passed rigorous stress tests including temperature cycling, high-temperature reverse bias, and ESD per JESD22 standards. It is explicitly designed for automotive power rail and signal line protection in ECUs, body controllers, and ADAS modules where field reliability is non-negotiable.
What does the "HM3" suffix indicate in P4SMA51AHM3_A/I?
The "HM3" suffix in P4SMA51AHM3_A/I signifies halogen-free, RoHS-compliant construction with AEC-Q101 qualification. The "H" denotes halogen-free molding compound, "M3" confirms RoHS compliance and JESD201 Class 2 whisker resistance, and the "_A/I" specifies packaging in 13" tape-and-reel (7500 pcs) with revision code A - all verified in Vishay's ordering information table on page 3 of document 88367.
How does the P4SMA51AHM3_A/I compare to bidirectional TVS diodes like P4SMA51CA?
The P4SMA51AHM3_A/I is unidirectional and intended for DC line protection where polarity is fixed (e.g., +12 V rail to ground), offering tighter VBR tolerance and lower leakage than bidirectional variants. In contrast, P4SMA51CA protects AC or floating signals but exhibits higher leakage and symmetric clamping in both directions - making P4SMA51AHM3_A/I the correct choice for polarized automotive power domains.
What is the thermal resistance of the P4SMA51AHM3_A/I, and how does it affect layout design?
The P4SMA51AHM3_A/I has a typical junction-to-ambient thermal resistance (RθJA) of 120 °C/W when mounted on 0.2" × 0.2" (5.0 mm × 5.0 mm) copper pads per terminal. This value assumes minimal copper area; increasing pad size or adding thermal vias reduces RθJA, directly improving surge endurance and steady-state power dissipation - essential for designs operating near 3.3 W continuous power limits.
P4SMA51AHM3_A/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AC, SMA
- Series:
- P4SMA, TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 43.6V
- Voltage - Breakdown (Min):
- 48.5V
- Voltage - Clamping (Max) @ Ipp:
- 70.1V
- Current - Peak Pulse (10/1000µs):
- 5.7A
- Power - Peak Pulse:
- 400W
- Power Line Protection:
- No
- Applications:
- Telecom
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -65°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AC (SMA)
P4SMA51AHM3_A/I FAQ
1.How can I place an order for P4SMA51AHM3_A/I through Aetrix?
Please submit a Request for Quotation (RFQ) for P4SMA51AHM3_A/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for P4SMA51AHM3_A/I reliable?
The price and inventory of P4SMA51AHM3_A/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for P4SMA51AHM3_A/I is usually 5 days.
3.What payment methods are accepted for P4SMA51AHM3_A/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for P4SMA51AHM3_A/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for P4SMA51AHM3_A/I?
P4SMA51AHM3_A/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your P4SMA51AHM3_A/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for P4SMA51AHM3_A/I?
For technical support, including P4SMA51AHM3_A/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your P4SMA51AHM3_A/I requirements.
6.How does Aetrix verify that P4SMA51AHM3_A/I is sourced from the original manufacturer or authorized distributors?
All P4SMA51AHM3_A/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that P4SMA51AHM3_A/I meets industry standards.
7.What is the process for return or replacement of P4SMA51AHM3_A/I?
All P4SMA51AHM3_A/I units undergo pre-shipment inspection (PSI). If there is an issue with P4SMA51AHM3_A/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The P4SMA51AHM3_A/I part is unused and in its original packaging.
Return procedure for P4SMA51AHM3_A/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
P4SMA51AHM3_A/I Tags

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Toshiba Semiconductor and Storage

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Diodes Incorporated
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