Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Vishay General Semiconductor - Diodes Division P4SMA6.8AHE3_A/I

Part No.:
P4SMA6.8AHE3_A/I
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
TVS Diodes
Package:
DO-214AC, SMA
Datasheet:
AetrixP4SMA6.8AHE3_A/I.pdf
Description:
TVS DIODE 5.8VWM 10.5VC DO214AC
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:7,500

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

P4SMA6.8AHE3_A/I from Vishay General Semiconductor is a unidirectional transient voltage suppressor (TVS) diode designed for primary overvoltage protection on DC power rails and signal lines. It features a 6.8 V breakdown voltage (VBR = 6.45–7.14 V at 10 mA), 5.8 V stand-off voltage (VWM), 10.5 V clamping voltage (VC) at 38.1 A peak pulse current, and 400 W peak pulse power rating with 10/1000 µs waveform. It is AEC-Q101 qualified and housed in SMA (DO-214AC) package for automotive and industrial electronics.

For engineers reviewing the P4SMA6.8AHE3_A/I datasheet, P4SMA6.8AHE3_A/I pinout, P4SMA6.8AHE3_A/I application, or P4SMA6.8AHE3_A/I equivalent, this device serves as a robust, surface-mount solution for protecting MOSFETs, ICs, and sensor interfaces against inductive switching transients and ESD events in space-constrained designs requiring automotive-grade reliability.

Technical Context

The P4SMA6.8AHE3_A/I operates as a unidirectional avalanche diode that clamps transient overvoltages above its breakdown threshold while maintaining low leakage (<1000 µA at 5.8 V). Its glass-passivated junction ensures stable VBR tolerance (±5%) and fast response time (<1 ns), enabling effective suppression of sub-microsecond surges.

Thermally, it exhibits RθJA = 120 °C/W and RθJL = 30 °C/W, with maximum junction temperature of +150 °C and surge capability up to 40 A (8.3 ms half-sine). The cathode-band marking identifies polarity, and the device meets MSL Level 1 per J-STD-020 with 260 °C reflow peak.

Key Specifications

ParameterValue and Actual Design Meaning
VBR (min/max)6.45 V / 7.14 V at 10 mA - defines precise clamping onset threshold for reliable overvoltage detection
VWM5.8 V - maximum continuous reverse working voltage before leakage rises significantly
VC @ IPPM10.5 V at 38.1 A - peak clamped voltage during 400 W transient, limiting stress on downstream components
PPPM400 W (10/1000 µs) - surge energy handling capacity suitable for automotive load-dump and ISO 7637-2 compliance
IFSM40 A (8.3 ms half-sine) - single-event forward surge rating for inrush or fault-current scenarios
TJ max+150 °C - enables operation in under-hood automotive environments and high-ambient industrial settings
AEC-Q101Qualified - validated for automotive electronic systems requiring zero-defect reliability and extended temperature cycling

Pinout & Package

Package: SMA (DO-214AC), surface-mount, low-profile case with matte tin-plated leads solderable per J-STD-002 and JESD 22-B102. Cathode identified by band marking.

Pin/TerminalCircuit RoleDesign Meaning
AnodeForward conduction terminalConnected to lower-potential side (e.g., ground or return path) in unidirectional configuration
CathodeAvalanche clamping terminalConnected to protected line (e.g., 5 V rail); band marking indicates cathode end for correct orientation

Key Features

FeatureDesign Value
400 W peak pulse powerSupports robust protection against ISO 7637-2 Pulse 1, 2a, and 5a transients without derating below 91 V
Glass passivated junctionEnsures stable VBR over lifetime and resistance to humidity-induced parameter drift
MSL Level 1 ratingEnables standard SMT reflow without moisture sensitivity concerns or baking requirements
AEC-Q101 qualificationValidates reliability for automotive powertrain, body control, and ADAS modules operating at -40 °C to +125 °C ambient
Low incremental surge resistanceMinimizes VC overshoot during fast-rising transients, improving protection margin for sensitive CMOS inputs

Applications

Automotive Power Rail ProtectionIndustrial Sensor Interface Protection

Use Scenario: Protecting 5 V microcontroller supply rails in vehicle body control modules exposed to load-dump and inductive kickback.

IC Role / Device Role / Timing Role: Unidirectional TVS placed between VIN and GND to clamp transients before they reach LDO input or MCU VDD.

Use Value: Limits clamped voltage to 10.5 V, preventing latch-up or gate oxide damage in 5 V logic devices during 400 W surges.

Use Scenario: Safeguarding analog output lines of pressure or temperature sensors in factory automation PLC I/O modules.

IC Role / Device Role / Timing Role: TVS mounted across sensor signal and reference ground to absorb ESD and cable discharge events.

Use Value: Sub-1 ns response and 10.5 V clamping prevent false readings or ADC saturation during 8 kV contact ESD per IEC 61000-4-2.

Consumer USB Port ProtectionMOSFET Gate Driver Protection

Use Scenario: Shielding VBUS and D+/D- lines in portable docking stations against hot-plug transients and ESD.

IC Role / Device Role / Timing Role: Discrete TVS array (using individual P4SMA6.8AHE3_A/I units) on each line referenced to system ground.

Use Value: 5.8 V VWM allows full 5 V USB signaling margin while clamping to 10.5 V ensures USB PHY survival under 15 kV air discharge.

Use Scenario: Protecting high-side N-channel MOSFET gate drivers in motor control inverters from Miller-induced voltage spikes.

IC Role / Device Role / Timing Role: TVS connected between gate and source to clamp dv/dt-induced overshoot during switching transitions.

Use Value: Low clamping voltage (10.5 V) prevents accidental gate oxide breakdown in 20 V-rated MOSFETs during 100 ns edge transients.

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient voltage suppression applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
SMAJ6.8ASame SMA package, identical VBR (6.45–7.14 V), but rated for 400 W with 10/1000 µs waveform and no AEC-Q101 qualificationCommercial-grade only; not validated for automotive temperature cycling or long-term reliability testingSelect when AEC-Q101 is not required and cost optimization is prioritized over automotive qualification
1.5SMC6.8AHigher power rating (1500 W), larger SMC (DO-214AB) package, same VBR range, AEC-Q101 available in HE3 variantRequires larger PCB footprint and higher thermal mass; suited for higher-energy transients like ISO 16750-2 load dumpChoose when surge energy exceeds 400 W or board layout accommodates larger SMC footprint

Compared with SMAJ6.8A, P4SMA6.8AHE3_A/I adds AEC-Q101 qualification and tighter process control for automotive use; compared with 1.5SMC6.8A, it trades peak power for compactness and lower thermal resistance in space-constrained modules.

Availability

P4SMA6.8AHE3_A/I is available at Aetrix Electronics and suitable for automotive body electronics, industrial sensor nodes, and consumer USB power delivery systems requiring stable component supply, AEC-Q101 traceability, and consistent surge performance across production batches.

Supply support for P4SMA6.8AHE3_A/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability, efficiency, and application-specific validation.

The P4SMA series is engineered for surface-mount transient suppression in automotive, industrial, and computing applications where compact size, high surge capability, and qualification-grade consistency are critical design requirements.

FAQ

What is the clamping voltage of the P4SMA6.8AHE3_A/I under maximum surge conditions?

The P4SMA6.8AHE3_A/I has a maximum clamping voltage (VC) of 10.5 V at 38.1 A peak pulse current (IPPM) using the standard 10/1000 µs waveform. This value is measured per Figure 1 in the Vishay datasheet 88367 and reflects the actual voltage seen by protected circuitry during worst-case transient events, ensuring compatibility with 5 V logic families and low-voltage MOSFET gates.

Is the P4SMA6.8AHE3_A/I suitable for automotive applications?

Yes, the P4SMA6.8AHE3_A/I is AEC-Q101 qualified, as confirmed by Vishay's ordering code suffix "HE3" and revision notes in document 88367. It supports operating junction temperatures from -65 °C to +150 °C and is validated for automotive environments including engine control units, infotainment power supplies, and ADAS sensor interfaces requiring zero-defect reliability.

What does the "_A/I" suffix mean in P4SMA6.8AHE3_A/I?

The "_A/I" suffix in P4SMA6.8AHE3_A/I denotes the packaging configuration: "A" indicates AEC-Q101 qualification level, and "I" specifies 13-inch diameter plastic tape-and-reel delivery with 7500 units per reel. This matches Vishay's ordering information table on page 3 of document 88367 and ensures traceability and automated placement compatibility.

How does the P4SMA6.8AHE3_A/I differ from bidirectional TVS diodes like P4SMA6.8CA?

The P4SMA6.8AHE3_A/I is unidirectional and features a cathode band for polarity-sensitive placement, whereas P4SMA6.8CA is bidirectional with no polarity marking. Unidirectional operation allows lower leakage at VWM (1000 µA vs. 2000 µA for CA types ≤10 V) and is preferred for DC rail protection; bidirectional variants suit AC-coupled or floating signal lines.

What is the thermal resistance of the P4SMA6.8AHE3_A/I, and how does it affect PCB layout?

The P4SMA6.8AHE3_A/I has a typical junction-to-ambient thermal resistance (RθJA) of 120 °C/W and junction-to-lead (RθJL) of 30 °C/W. To maintain safe junction temperature under repetitive surges, PCB layout must use minimum 0.2" × 0.2" (5.0 mm × 5.0 mm) copper pads per terminal as specified in Figure 2 of the datasheet-smaller pads increase thermal impedance and risk thermal runaway.

P4SMA6.8AHE3_A/I Specifications

Product attributes
Attribute value
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package/Case:
DO-214AC, SMA
Series:
P4SMA, TransZorb®
Packaging:
Tape & Reel (TR)
Product Status:
Active
Type:
Zener
Unidirectional Channels:
1
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
5.8V
Voltage - Breakdown (Min):
6.45V
Voltage - Clamping (Max) @ Ipp:
10.5V
Current - Peak Pulse (10/1000µs):
38.1A
Power - Peak Pulse:
400W
Power Line Protection:
No
Applications:
-
Capacitance @ Frequency:
-
Operating Temperature:
-65°C ~ 150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
DO-214AC (SMA)

P4SMA6.8AHE3_A/I FAQ

1.How can I place an order for P4SMA6.8AHE3_A/I through Aetrix?

Please submit a Request for Quotation (RFQ) for P4SMA6.8AHE3_A/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for P4SMA6.8AHE3_A/I reliable?

The price and inventory of P4SMA6.8AHE3_A/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for P4SMA6.8AHE3_A/I is usually 5 days.

3.What payment methods are accepted for P4SMA6.8AHE3_A/I?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for P4SMA6.8AHE3_A/I transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for P4SMA6.8AHE3_A/I?

P4SMA6.8AHE3_A/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your P4SMA6.8AHE3_A/I order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for P4SMA6.8AHE3_A/I?

For technical support, including P4SMA6.8AHE3_A/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your P4SMA6.8AHE3_A/I requirements.

6.How does Aetrix verify that P4SMA6.8AHE3_A/I is sourced from the original manufacturer or authorized distributors?

All P4SMA6.8AHE3_A/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that P4SMA6.8AHE3_A/I meets industry standards.

7.What is the process for return or replacement of P4SMA6.8AHE3_A/I?

All P4SMA6.8AHE3_A/I units undergo pre-shipment inspection (PSI). If there is an issue with P4SMA6.8AHE3_A/I, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The P4SMA6.8AHE3_A/I part is unused and in its original packaging.

Return procedure for P4SMA6.8AHE3_A/I:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

P4SMA6.8AHE3_A/I Tags

  • P4SMA6.8AHE3_A/I
  • P4SMA6.8AHE3_A/I PDF
  • P4SMA6.8AHE3_A/I Datasheet
  • P4SMA6.8AHE3_A/I Specifications
  • P4SMA6.8AHE3_A/I Images
  • Vishay General Semiconductor - Diodes Division
  • Vishay General Semiconductor - Diodes Division P4SMA6.8AHE3_A/I
  • Buy P4SMA6.8AHE3_A/I
  • P4SMA6.8AHE3_A/I Price
  • P4SMA6.8AHE3_A/I Distributor
  • P4SMA6.8AHE3_A/I Supplier
  • P4SMA6.8AHE3_A/I Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER