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Vishay General Semiconductor - Diodes Division P4SMA82AHE3_A/I

Part No.:
P4SMA82AHE3_A/I
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
TVS Diodes
Package:
DO-214AC, SMA
Datasheet:
AetrixP4SMA82AHE3_A/I.pdf
Description:
TVS DIODE 70.1VWM 113VC DO214AC
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:6,757

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Product details

Overview

P4SMA82AHE3_A/I from Vishay General Semiconductor is a unidirectional transient voltage suppressor (TVS) diode in SMA (DO-214AC) package, designed for robust overvoltage protection of sensitive electronics. It features a 77.9 V minimum breakdown voltage (VBR), 70.1 V maximum standoff voltage (VWM), and clamps to 113 V at 3.5 A peak pulse current (IPPM) under 10/1000 µs waveform - ideal for safeguarding power rails and signal lines in automotive ECUs and industrial sensor interfaces.

For engineers reviewing the P4SMA82AHE3_A/I datasheet, P4SMA82AHE3_A/I pinout, P4SMA82AHE3_A/I application, or P4SMA82AHE3_A/I equivalent, this AEC-Q101 qualified device delivers 400 W peak pulse power, low incremental surge resistance, and MSL Level 1 moisture sensitivity - critical for high-reliability automotive and industrial PCB designs requiring validated transient immunity.

Technical Context

The P4SMA82AHE3_A/I operates as a unidirectional clamping TVS diode with avalanche breakdown behavior, triggered when reverse voltage exceeds its 77.9–86.1 V breakdown range at 1 mA test current. Its glass-passivated junction ensures stable leakage performance (<1 µA at 70.1 V) and fast response time (<1 ns), enabling effective suppression of ESD, lightning-induced surges, and inductive switching transients.

Thermally, it exhibits RθJA = 120 °C/W and RθJL = 30 °C/W, supporting operation up to +150 °C junction temperature. The device is rated for 40 A non-repetitive forward surge (8.3 ms half-sine) and derates linearly above 25 °C ambient per Figure 2 - essential for thermal design validation in compact, high-density layouts.

Key Specifications

Parameter Value and Actual Design Meaning
VBR (min/max) 77.9 V / 86.1 V at IT = 1 mA - defines precise clamping onset threshold for circuit-level overvoltage detection
VWM 70.1 V - maximum continuous reverse operating voltage before leakage exceeds 1 µA; sets safe DC bias margin
VC @ IPPM 113 V at 3.5 A (10/1000 µs) - actual clamped voltage seen by protected IC during surge; determines downstream voltage stress
PPPM 400 W - peak transient energy absorption capability; enables protection against IEC 61000-4-5 Level 4 surges
IFSM 40 A - single half-sine surge rating (8.3 ms); supports robustness against load dump events in 12 V automotive systems
TJ max +150 °C - maximum junction temperature; allows operation in under-hood or enclosed industrial enclosures
Package SMA (DO-214AC) - surface-mount footprint with 5.0 mm × 5.0 mm copper pad thermal requirement; compatible with standard reflow profiles

Pinout & Package

Package: SMA (DO-214AC), molded epoxy case meeting UL 94 V-0 flammability rating; matte tin-plated leads compliant with J-STD-002 and JESD 22-B102 solderability standards. Polarity indicated by cathode band on unidirectional devices.

Pin/Terminal Circuit Role Design Meaning
Anode Forward conduction terminal Connected to lower-potential side (e.g., ground or return path); conducts during forward surge events
Cathode Reverse-biased clamping terminal Connected to protected line (e.g., 12 V rail or CAN_H); avalanches to clamp transients above VWM

Key Features

Feature Design Value
AEC-Q101 qualification Validated for automotive-grade reliability including temperature cycling, HTRB, and ESD testing - required for engine control, ADAS, and body electronics
400 W peak pulse power (10/1000 µs) Enables compliance with ISO 7637-2 Pulse 1/2/5a and IEC 61000-4-5 surge immunity without external heat sinking
Glass passivated chip junction Ensures stable VBR tolerance (±5 %), low leakage (<1 µA), and long-term parameter stability across 15-year service life
MSL Level 1 (260 °C peak) Permits single-reflow assembly without baking; eliminates moisture-related popcorning risk in high-volume SMT production
Low incremental surge resistance Minimizes VC overshoot during fast-rising transients (e.g., ESD >15 kV), improving protection margin for 3.3 V/5 V logic interfaces

Applications

Automotive Power Rail Protection Industrial Sensor Interface Protection

Use Scenario: Protecting 12 V supply inputs in engine control units (ECUs) against load dump and alternator transients per ISO 7637-2.

IC Role / Device Role / Timing Role: Unidirectional TVS clamping element placed between battery rail and DC-DC input stage.

Use Value: Limits transient voltage to ≤113 V, preventing damage to upstream LDOs and microcontrollers while sustaining 40 A surge current.

Use Scenario: Shielding analog output lines (e.g., 4–20 mA current loop) of pressure/temperature sensors in factory automation systems.

IC Role / Device Role / Timing Role: Reverse-biased TVS connected between signal line and ground to shunt ESD and cable discharge events.

Use Value: Clamps sub-100 ns ESD pulses to <113 V within nanoseconds, preserving signal integrity and avoiding ADC saturation or latch-up.

Telecom Line Card Surge Suppression Consumer Power Adapter Input Protection

Use Scenario: Safeguarding Ethernet PHY power pins and auxiliary bias rails in telecom base station line cards exposed to lightning-induced surges.

IC Role / Device Role / Timing Role: Primary clamping device on +3.3 V/+5 V bias rails feeding high-speed SerDes and clock buffers.

Use Value: Absorbs 400 W transient energy without degradation, maintaining rail stability during IEC 61000-4-5 Level 4 (4 kV) tests.

Use Scenario: Protecting primary-side rectifier outputs in USB-C PD adapters against AC line transients and hot-plug surges.

IC Role / Device Role / Timing Role: Unidirectional TVS placed across bulk capacitor to clamp overvoltage spikes during MOSFET switching faults.

Use Value: Withstands repetitive 300 W surges above 91 V and maintains <1 µA leakage at 70.1 V, ensuring no standby power penalty.

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient voltage suppression applications.

Alternative Part Technical Difference Application Difference Selection Advice
SMBJ85A-E3/52 Higher VWM (72.2 V), higher VC (121 V at 3.3 A), SMB package (larger footprint, lower RθJA = 85 °C/W) Better suited for 24 V systems with wider voltage margin; less optimal for space-constrained 12 V PCBs Select when thermal budget is tighter and board area permits larger SMB package
1.5KE82A-T Through-hole DO-201 package, same VBR/VC, higher PPPM (1500 W), but no AEC-Q101 qualification Applicable in legacy industrial power supplies where automotive qualification is not required Choose only for non-automotive, cost-sensitive through-hole designs needing higher surge rating

Compared with SMBJ85A-E3/52 and 1.5KE82A-T, the P4SMA82AHE3_A/I offers AEC-Q101 qualification, SMA footprint efficiency, and optimized 12 V system clamping - making it the preferred choice for new automotive and high-density industrial designs where reliability, size, and qualification alignment are mandatory.

Availability

P4SMA82AHE3_A/I is available at Aetrix Electronics and suitable for automotive ECU protection, industrial sensor interface hardening, and telecom line card surge suppression requiring stable component supply across multi-year production cycles.

Supply support for P4SMA82AHE3_A/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, and protection devices with emphasis on reliability, precision, and automotive-grade validation.

The P4SMA Series is engineered specifically for surface-mount transient voltage suppression in harsh environments - targeting automotive, industrial, and telecom applications where AEC-Q101 compliance, low-profile packaging, and repeatable clamping performance are critical.

FAQ

What is the exact breakdown voltage range of the P4SMA82AHE3_A/I?

The P4SMA82AHE3_A/I has a guaranteed breakdown voltage (VBR) range of 77.9 V to 86.1 V at 1 mA test current, measured per ANSI/IEEE C62.35. This tight ±5 % tolerance ensures consistent clamping behavior across production lots and temperature extremes, directly supporting design margin calculations for protected circuits.

Is the P4SMA82AHE3_A/I suitable for automotive applications?

Yes, the P4SMA82AHE3_A/I is AEC-Q101 qualified and carries the "HE3" suffix denoting RoHS-compliant and automotive-grade construction. It undergoes rigorous stress testing including temperature cycling, highly accelerated life testing (HALT), and ESD verification - making it approved for use in engine control modules, body electronics, and ADAS subsystems.

What is the maximum clamping voltage of the P4SMA82AHE3_A/I under surge conditions?

The P4SMA82AHE3_A/I clamps to a maximum of 113 V at 3.5 A peak pulse current (IPPM) using the standardized 10/1000 µs waveform. This value is measured under specified mounting conditions (0.2" × 0.2" copper pads) and defines the upper voltage limit imposed on protected circuitry during transient events.

Does the P4SMA82AHE3_A/I have a bidirectional variant?

No - the "A" suffix in P4SMA82AHE3_A/I denotes unidirectional configuration. Bidirectional variants use the "CA" suffix (e.g., P4SMA82CA). The P4SMA82AHE3_A/I features a cathode band marking and is intended for DC rail protection where polarity is fixed, not AC or differential signal lines.

What is the thermal resistance and how does it affect layout design for the P4SMA82AHE3_A/I?

The P4SMA82AHE3_A/I has a typical junction-to-ambient thermal resistance (RθJA) of 120 °C/W when mounted on 0.2" × 0.2" (5.0 mm × 5.0 mm) copper pads per terminal. To maintain TJ ≤ 150 °C under worst-case 3.3 W steady-state dissipation, designers must ensure adequate copper area and avoid thermal isolation - especially in sealed enclosures or high-ambient environments.

P4SMA82AHE3_A/I Specifications

Product attributes
Attribute value
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package/Case:
DO-214AC, SMA
Series:
P4SMA, TransZorb®
Packaging:
Tape & Reel (TR)
Product Status:
Active
Type:
Zener
Unidirectional Channels:
1
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
70.1V
Voltage - Breakdown (Min):
77.9V
Voltage - Clamping (Max) @ Ipp:
113V
Current - Peak Pulse (10/1000µs):
3.5A
Power - Peak Pulse:
400W
Power Line Protection:
No
Applications:
-
Capacitance @ Frequency:
-
Operating Temperature:
-65°C ~ 150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
DO-214AC (SMA)

P4SMA82AHE3_A/I FAQ

1.How can I place an order for P4SMA82AHE3_A/I through Aetrix?

Please submit a Request for Quotation (RFQ) for P4SMA82AHE3_A/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for P4SMA82AHE3_A/I reliable?

The price and inventory of P4SMA82AHE3_A/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for P4SMA82AHE3_A/I is usually 5 days.

3.What payment methods are accepted for P4SMA82AHE3_A/I?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for P4SMA82AHE3_A/I transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for P4SMA82AHE3_A/I?

P4SMA82AHE3_A/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your P4SMA82AHE3_A/I order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for P4SMA82AHE3_A/I?

For technical support, including P4SMA82AHE3_A/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your P4SMA82AHE3_A/I requirements.

6.How does Aetrix verify that P4SMA82AHE3_A/I is sourced from the original manufacturer or authorized distributors?

All P4SMA82AHE3_A/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that P4SMA82AHE3_A/I meets industry standards.

7.What is the process for return or replacement of P4SMA82AHE3_A/I?

All P4SMA82AHE3_A/I units undergo pre-shipment inspection (PSI). If there is an issue with P4SMA82AHE3_A/I, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The P4SMA82AHE3_A/I part is unused and in its original packaging.

Return procedure for P4SMA82AHE3_A/I:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

P4SMA82AHE3_A/I Tags

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