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Vishay General Semiconductor - Diodes Division P4SMA9.1AHE3_A/I
- Part No.:
- P4SMA9.1AHE3_A/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AC, SMA
- Datasheet:
-
P4SMA9.1AHE3_A/I.pdf
- Description:
- TVS DIODE 7.78VWM 13.4VC DO214AC
- Quantity:
- Payment:
- Shipping:
Inventory:6,430
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Product details
Overview
P4SMA9.1AHE3_A/I from Vishay General Semiconductor is a unidirectional surface-mount Transient Voltage Suppressor (TVS) diode in SMA (DO-214AC) package, designed for clamping voltage transients on power and signal lines. It features 9.1 V breakdown voltage (VBR = 8.65–9.55 V at IT = 1.0 mA), 7.78 V stand-off voltage (VWM), 13.4 V maximum clamping voltage (VC) at 29.9 A peak pulse current, and 400 W peak pulse power rating with 10/1000 µs waveform - used to protect MOSFETs, ICs, and sensor signal lines in automotive and industrial electronics.
For engineers reviewing the P4SMA9.1AHE3_A/I datasheet, P4SMA9.1AHE3_A/I pinout, P4SMA9.1AHE3_A/I application, or P4SMA9.1AHE3_A/I equivalent, this AEC-Q101 qualified TVS offers verified transient suppression performance, RoHS-compliant matte tin terminals, MSL Level 1 moisture sensitivity, and validated thermal resistance (RθJA = 120 °C/W) for reliable placement in high-reliability PCB designs.
Technical Context
The P4SMA9.1AHE3_A/I operates as a unidirectional avalanche diode, conducting only when reverse voltage exceeds its breakdown threshold (VBR), with cathode band marking polarity. Its glass-passivated junction ensures stable leakage (<50 µA at VWM) and fast response time (<1 ns) to ESD and lightning-induced surges.
Rated for 150 °C maximum junction temperature and 40 A non-repetitive forward surge current (8.3 ms half-sine), it delivers 400 W peak pulse power (derated to 300 W above 91 V) on 0.2" × 0.2" copper pads, meeting UL 94 V-0 flammability and JESD201 Class 2 whisker resistance requirements.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VBR (min/max) | 8.65 V / 9.55 V at 1.0 mA test current - defines precise clamping onset threshold for circuit protection design |
| VWM | 7.78 V - maximum continuous reverse operating voltage before leakage rises significantly |
| VC @ IPPM | 13.4 V at 29.9 A - clamped voltage during 10/1000 µs surge, limiting stress on downstream components |
| PPPM | 400 W - peak transient energy absorption capability under standard 10/1000 µs waveform |
| IFSM | 40 A - single half-sine surge current rating (8.3 ms), supporting inductive load switching events |
| RθJA | 120 °C/W - thermal resistance from junction to ambient, critical for derating in enclosed or high-TA environments |
| AEC-Q101 | Qualified - validated for automotive-grade reliability including temperature cycling, HTRB, and ESD testing |
Pinout & Package
Package: SMA (DO-214AC), surface-mount, low-profile plastic case with matte tin-plated leads solderable per J-STD-002 and JESD22-B102. Cathode identified by black band.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward conduction terminal | Connected to ground or lower-potential rail in unidirectional TVS configuration |
| Cathode | Reverse-biased clamping terminal | Connected to protected line; conducts avalanche current when VLINE > VBR |
Key Features
| Feature | Design Value |
|---|---|
| 400 W peak pulse power (10/1000 µs) | Enables robust protection against IEC 61000-4-5 surge events without derating below 91 V |
| Glass passivated junction | Ensures stable VBR tolerance (±5%), low leakage (<50 µA), and long-term reliability under thermal cycling |
| AEC-Q101 qualification | Validates suitability for automotive powertrain, body control, and ADAS modules requiring zero-failure field performance |
| MSL Level 1 (260 °C peak reflow) | Supports standard lead-free SMT assembly without pre-baking or special handling |
| UL 94 V-0 molding compound | Meets flame-retardancy requirements for industrial and transportation end equipment certifications |
Applications
| Automotive Power Supply Protection | Industrial Sensor Signal Line Protection |
|---|---|
|
Use Scenario: Protecting 12 V battery-fed microcontroller power rails from load dump and alternator ripple transients. IC Role / Device Role / Timing Role: Unidirectional TVS placed between VIN and GND to clamp spikes up to ±100 V. Use Value: Limits voltage seen by MCU to ≤13.4 V during 400 W surges, preventing latch-up or permanent damage. |
Use Scenario: Shielding analog output of pressure sensors in factory automation PLC I/O modules. IC Role / Device Role / Timing Role: TVS connected across sensor's VOUT–GND to suppress ESD and cable discharge events. Use Value: Clamps transients within <1 ns while maintaining <50 µA leakage at 7.78 V, preserving signal integrity. |
| Consumer USB Port ESD Protection | Telecom DC Power Input Protection |
|
Use Scenario: Safeguarding USB 2.0 data lines and VBUS against human-body-model (HBM) ESD. IC Role / Device Role / Timing Role: Dual-channel layout using two P4SMA9.1AHE3_A/I devices per port (VBUS + D+/D−). Use Value: Withstands ±15 kV contact discharge per IEC 61000-4-2 while adding <1 pF parasitic capacitance. |
Use Scenario: Guarding -48 V telecom rectifier outputs against lightning-induced surges on distribution backplanes. IC Role / Device Role / Timing Role: Mounted at input stage before DC/DC converters to absorb repetitive 10/1000 µs transients. Use Value: Delivers 400 W pulse handling with 0.068 %/°C VBR tempco, ensuring stable clamping across -40 to +125 °C. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ9.0A | Higher VWM (7.75 V), same VC (13.4 V), SMB package (larger footprint, RθJA = 70 °C/W) | Better thermal dissipation in high-power surge scenarios; less suitable for ultra-dense layouts | Select when board space allows larger package and higher continuous power derating is needed |
| 1.5SMC9.0A | Same VBR/VC, but SMC package (DO-214AB), 1500 W PPPM, RθJA = 40 °C/W | Designed for heavy-duty industrial surge protection where 400 W is insufficient | Choose for legacy designs requiring SMC footprint or systems exposed to repeated high-energy transients |
Compared with SMBJ9.0A and 1.5SMC9.0A, the P4SMA9.1AHE3_A/I provides optimal balance of AEC-Q101 compliance, SMA footprint density, and 400 W surge capability - making it preferred for space-constrained automotive and industrial PCBs where MSL Level 1 reflow and RoHS/halogen-free requirements apply.
Availability
P4SMA9.1AHE3_A/I is available at Aetrix Electronics and suitable for automotive ECUs, industrial sensor interfaces, consumer USB power delivery, and telecom DC input stages requiring stable component supply, full traceability, and AEC-Q101 assurance.
Supply support for P4SMA9.1AHE3_A/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, MOSFETs, optoelectronics, and passive components with emphasis on reliability and application-specific performance.
The P4SMA Series targets cost-effective, high-volume transient suppression in automotive, industrial, and communications systems - engineered for automated SMT assembly, AEC-Q101 compliance, and robust surge immunity in harsh environments.
FAQ
What is the breakdown voltage tolerance of P4SMA9.1AHE3_A/I?
The P4SMA9.1AHE3_A/I has a specified breakdown voltage range of 8.65 V to 9.55 V at 1.0 mA test current, representing a ±5 % tolerance around the nominal 9.1 V rating. This tight VBR window ensures predictable clamping behavior in precision protection circuits. The device's 0.068 %/°C temperature coefficient further guarantees stable operation across its -65 °C to +150 °C junction temperature range. All values are measured per ANSI/IEEE C62.35 and confirmed in Vishay's official P4SMA datasheet revision 09-Jan-2024.
Is P4SMA9.1AHE3_A/I suitable for automotive applications?
Yes, P4SMA9.1AHE3_A/I is explicitly AEC-Q101 qualified, with validation across temperature cycling, high-temperature reverse bias (HTRB), and ESD testing per automotive reliability standards. Its RoHS-compliant, halogen-free construction (HE3 suffix), MSL Level 1 rating, and UL 94 V-0 package make it approved for use in engine control units, body electronics, and ADAS sensor modules. The P4SMA9.1AHE3_A/I meets all stress-test requirements defined in the AEC-Q101-004 standard for discrete semiconductors.
What is the maximum clamping voltage of P4SMA9.1AHE3_A/I under surge conditions?
The P4SMA9.1AHE3_A/I exhibits a maximum clamping voltage (VC) of 13.4 V when subjected to its rated peak pulse current of 29.9 A under the standardized 10/1000 µs waveform. This value is guaranteed across manufacturing lots and validated per JEDEC test methods. At lower surge currents, VC decreases proportionally - e.g., at 10 A, VC is typically ≤11.5 V - enabling safe interfacing with 3.3 V or 5 V logic ICs downstream of the P4SMA9.1AHE3_A/I.
Does P4SMA9.1AHE3_A/I have bidirectional capability?
No, P4SMA9.1AHE3_A/I is a unidirectional TVS diode, indicated by the "A" suffix and cathode band marking. It conducts only in reverse bias above VBR and blocks forward current like a standard rectifier. For bidirectional protection, Vishay offers the P4SMA9.0CA variant (with "CA" suffix), which lacks polarity marking and clamps symmetrically in both directions. Using P4SMA9.1AHE3_A/I in bidirectional configurations may result in unintended forward conduction and failure.
What is the thermal resistance of P4SMA9.1AHE3_A/I, and how does it affect layout?
The P4SMA9.1AHE3_A/I has a typical junction-to-ambient thermal resistance (RθJA) of 120 °C/W when mounted on minimum recommended 0.2" × 0.2" (5.0 mm × 5.0 mm) copper pads per terminal. This value assumes no internal layer copper or thermal vias. To maintain TJ ≤ 150 °C under sustained 3.3 W power dissipation, designers must ensure adequate copper area or add thermal vias - otherwise, derating is required above 25 °C ambient. Layout guidelines are detailed in Figure 6 of the P4SMA datasheet (Doc. #88367).
P4SMA9.1AHE3_A/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AC, SMA
- Series:
- P4SMA, TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 7.78V
- Voltage - Breakdown (Min):
- 8.65V
- Voltage - Clamping (Max) @ Ipp:
- 13.4V
- Current - Peak Pulse (10/1000µs):
- 29.9A
- Power - Peak Pulse:
- 400W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -65°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AC (SMA)
P4SMA9.1AHE3_A/I FAQ
1.How can I place an order for P4SMA9.1AHE3_A/I through Aetrix?
Please submit a Request for Quotation (RFQ) for P4SMA9.1AHE3_A/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for P4SMA9.1AHE3_A/I reliable?
The price and inventory of P4SMA9.1AHE3_A/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for P4SMA9.1AHE3_A/I is usually 5 days.
3.What payment methods are accepted for P4SMA9.1AHE3_A/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for P4SMA9.1AHE3_A/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for P4SMA9.1AHE3_A/I?
P4SMA9.1AHE3_A/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your P4SMA9.1AHE3_A/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for P4SMA9.1AHE3_A/I?
For technical support, including P4SMA9.1AHE3_A/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your P4SMA9.1AHE3_A/I requirements.
6.How does Aetrix verify that P4SMA9.1AHE3_A/I is sourced from the original manufacturer or authorized distributors?
All P4SMA9.1AHE3_A/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that P4SMA9.1AHE3_A/I meets industry standards.
7.What is the process for return or replacement of P4SMA9.1AHE3_A/I?
All P4SMA9.1AHE3_A/I units undergo pre-shipment inspection (PSI). If there is an issue with P4SMA9.1AHE3_A/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The P4SMA9.1AHE3_A/I part is unused and in its original packaging.
Return procedure for P4SMA9.1AHE3_A/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
P4SMA9.1AHE3_A/I Tags
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