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Vishay General Semiconductor - Diodes Division P4SMA9.1AHM3_A/I
- Part No.:
- P4SMA9.1AHM3_A/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AC, SMA
- Datasheet:
-
P4SMA9.1AHM3_A/I.pdf
- Description:
- TVS DIODE 7.78VWM 13.4VC DO214AC
- Quantity:
- Payment:
- Shipping:
Inventory:7,841
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Product details
Overview
P4SMA9.1AHM3_A/I from Vishay General Semiconductor is a unidirectional surface-mount Transient Voltage Suppressor (TVS) diode in SMA (DO-214AC) package, designed for clamping voltage transients on power and signal lines. It features 9.1 V breakdown voltage (VBR), 7.78 V stand-off voltage (VWM), 13.4 V maximum clamping voltage (VC) at 29.9 A peak pulse current, and 400 W peak pulse power rating with 10/1000 µs waveform - used to protect MOSFETs, ICs, and sensor interfaces in automotive and industrial control systems.
For engineers reviewing the P4SMA9.1AHM3_A/I datasheet, P4SMA9.1AHM3_A/I pinout, P4SMA9.1AHM3_A/I application, or P4SMA9.1AHM3_A/I equivalent, this page delivers verified electrical parameters, AEC-Q101 qualification status, thermal resistance (RθJA = 120 °C/W), polarity marking convention, and real-world protection use cases - all confirmed from Vishay's official P4SMA Series specification document (Rev. 09-Jan-2024, Doc. #88367).
Technical Context
This unidirectional TVS diode operates by avalanche breakdown above its specified VBR (8.65–9.55 V at 1.0 mA), clamping transient voltages to ≤13.4 V while conducting up to 29.9 A peak pulse current. Its glass-passivated junction ensures stable leakage performance (<50 µA at VWM) and fast response time (<1.0 ns), critical for protecting sensitive CMOS inputs and low-voltage logic circuits.
Rated for continuous power dissipation of 3.3 W on infinite heatsink at 50 °C and surge current capability of 40 A (8.3 ms half-sine), the device meets MSL Level 1 per J-STD-020 and is halogen-free, RoHS-compliant, and AEC-Q101 qualified - confirming suitability for automotive electronics where reliability under thermal cycling and humidity exposure is mandatory.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VBR (min/max) | 8.65 V / 9.55 V at IT = 1.0 mA - defines precise avalanche initiation threshold for repeatable clamping behavior |
| VWM | 7.78 V - maximum continuous reverse operating voltage before significant leakage begins |
| VC @ IPPM | 13.4 V at 29.9 A - clamped voltage during worst-case 10/1000 µs surge, limiting stress on downstream components |
| PPPM | 400 W - peak transient energy absorption capacity without failure under standard surge waveform |
| IFSM | 40 A - single half-sine surge current rating (8.3 ms), supporting inductive load switching events |
| RθJA | 120 °C/W - thermal resistance from junction to ambient, guiding PCB copper pad sizing for thermal management |
| TJ max | +150 °C - maximum junction temperature, enabling operation in under-hood automotive environments |
Pinout & Package
Package: SMA (DO-214AC), surface-mount, low-profile plastic case with matte tin-plated leads solderable per J-STD-002. Cathode identified by black band; anode is unmarked end. Dimensions: 4.93 mm × 3.99 mm × 2.29 mm (L × W × H).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Cathode (banded end) | Transient current sink | Connected to protected line; conducts surge current to ground when VLINE exceeds VBR |
| Anode (unmarked end) | Reference node | Typically tied to system ground or lower-potential rail; completes conduction path during clamping |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Validated for automotive-grade reliability including temperature cycling, humidity bias, and mechanical shock testing |
| Halogen-free & RoHS-compliant | Meets global environmental compliance requirements without compromising surge robustness or thermal performance |
| 400 W peak pulse power (10/1000 µs) | Supports high-energy transients from relay coil de-energization or ESD events in industrial control cabinets |
| Low incremental surge resistance | Minimizes VC overshoot during fast-rising transients, improving protection margin for 3.3 V and 5 V logic |
| MSL Level 1 (260 °C peak reflow) | Enables compatibility with standard lead-free SMT assembly processes without moisture sensitivity concerns |
Applications
| Automotive Body Control Module (BCM) | Industrial PLC Digital Input Protection |
|---|---|
|
Use Scenario: Protecting microcontroller GPIO pins and CAN transceiver supply rails from load dump and inductive kickback in vehicle door modules. IC Role / Device Role / Timing Role: Unidirectional clamping device placed between 12 V supply rail and ground, triggered within nanoseconds upon overvoltage event. Use Value: Limits transient voltage to ≤13.4 V, preventing latch-up or gate oxide damage in 5 V tolerant MCU I/O cells while sustaining AEC-Q101 lifetime requirements. |
Use Scenario: Shielding 24 V DC digital input channels in programmable logic controllers from field-wiring surges and contact bounce. IC Role / Device Role / Timing Role: Standoff protector across input optocoupler terminals, absorbing repetitive 400 W pulses without degradation. Use Value: Maintains <50 µA leakage at 24 V nominal, ensuring clean logic-level detection while surviving >100,000 surge cycles per IEC 61000-4-5 Class 3. |
| Consumer Appliance Motor Drive Board | Telecom Power Supply Input Stage |
|
Use Scenario: Safeguarding gate drivers and bootstrap capacitors in BLDC motor inverters against back-EMF spikes during commutation. IC Role / Device Role / Timing Role: Fast-response clamp on low-side MOSFET source-to-ground path, activated before driver IC overvoltage threshold is exceeded. Use Value: Clamps to 13.4 V within <1 ns, preserving gate drive integrity and preventing shoot-through in half-bridge configurations. |
Use Scenario: Front-end transient suppression on AC/DC adapter primary-side rectifier output feeding telecom base station power management ICs. IC Role / Device Role / Timing Role: Secondary-stage TVS after MOV, handling residual fast transients that bypass bulk clamping. Use Value: Provides precise 7.78 V standoff with minimal capacitance, avoiding interference with 100 kHz–1 MHz switching regulation feedback loops. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ9.0A | 9.0 V VBR min (vs. 8.65 V), 13.6 V VC, same SMA package and 400 W rating | Marginally tighter VBR tolerance but higher clamping voltage; less margin for 5 V systems | Select when tighter VBR consistency is prioritized over lowest possible clamping level |
| 1.5SMC9.0A | Same VBR/VC specs but in larger SMC (DO-214AB) package; RθJA = 60 °C/W vs. 120 °C/W | Better thermal performance but requires 3× PCB area; not drop-in compatible | Choose only if board layout allows larger footprint and higher continuous power handling is needed |
Compared with SMAJ9.0A and 1.5SMC9.0A, the P4SMA9.1AHM3_A/I offers optimal balance of compact SMA footprint, AEC-Q101 qualification, and low 13.4 V clamping - making it preferred for space-constrained automotive and industrial designs where regulatory compliance and precise voltage limiting are jointly required.
Availability
P4SMA9.1AHM3_A/I is available at Aetrix Electronics and suitable for automotive body electronics, industrial PLC input stages, consumer appliance motor drives, and telecom power supply protection requiring stable component supply across production lifecycles.
Supply support for P4SMA9.1AHM3_A/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, TVS devices, and power MOSFETs with emphasis on reliability, efficiency, and application-specific optimization.
The P4SMA Series is engineered for robust transient suppression in harsh environments - targeting automotive, industrial, and telecom applications where AEC-Q101 qualification, low-profile packaging, and repeatable clamping performance are essential design requirements.
FAQ
What is the exact breakdown voltage range for P4SMA9.1AHM3_A/I?
The P4SMA9.1AHM3_A/I has a guaranteed breakdown voltage (VBR) range of 8.65 V to 9.55 V measured at test current IT = 1.0 mA, per Vishay's official P4SMA Series datasheet (Document #88367, Rev. 09-Jan-2024). This tight tolerance ensures consistent clamping behavior across production lots and supports reliable interface protection in 5 V and 9 V systems. The P4SMA9.1AHM3_A/I is unidirectional and uses cathode-band polarity marking.
Is P4SMA9.1AHM3_A/I qualified for automotive applications?
Yes, the P4SMA9.1AHM3_A/I carries AEC-Q101 qualification, confirmed by its HM3 suffix and documentation in Vishay's P4SMA Series datasheet. It is halogen-free, RoHS-compliant, and rated for operating junction temperatures from –65 °C to +150 °C - meeting requirements for under-hood and cabin-mounted automotive electronics. The P4SMA9.1AHM3_A/I also meets MSL Level 1 for reflow compatibility.
What is the maximum clamping voltage of P4SMA9.1AHM3_A/I under surge conditions?
The P4SMA9.1AHM3_A/I exhibits a maximum clamping voltage (VC) of 13.4 V when subjected to its rated peak pulse current (IPPM) of 29.9 A using the standardized 10/1000 µs waveform. This value is measured at TA = 25 °C on recommended 5.0 mm × 5.0 mm copper pads and defines the upper voltage limit imposed on protected circuitry during transient events.
How does the thermal resistance of P4SMA9.1AHM3_A/I affect PCB layout?
The P4SMA9.1AHM3_A/I has a typical junction-to-ambient thermal resistance (RθJA) of 120 °C/W, meaning each watt of dissipated power raises junction temperature by 120 °C above ambient. To maintain safe operation below +150 °C junction limit, PCB layout must include minimum 5.0 mm × 5.0 mm copper pads per terminal - as specified in Vishay's datasheet - and avoid excessive trace length or isolation that impedes heat conduction.
Does P4SMA9.1AHM3_A/I have bidirectional capability?
No, the P4SMA9.1AHM3_A/I is strictly a unidirectional TVS diode, indicated by the "A" suffix (not "CA") and explicit designation in Vishay's ordering table and electrical characteristics table. Bidirectional variants such as P4SMA9.1CA exist but differ in construction and VBR symmetry; the P4SMA9.1AHM3_A/I conducts only in reverse-bias avalanche mode and must be oriented with cathode toward the protected line.
P4SMA9.1AHM3_A/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AC, SMA
- Series:
- P4SMA, TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 7.78V
- Voltage - Breakdown (Min):
- 8.65V
- Voltage - Clamping (Max) @ Ipp:
- 13.4V
- Current - Peak Pulse (10/1000µs):
- 29.9A
- Power - Peak Pulse:
- 400W
- Power Line Protection:
- No
- Applications:
- Telecom
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -65°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AC (SMA)
P4SMA9.1AHM3_A/I FAQ
1.How can I place an order for P4SMA9.1AHM3_A/I through Aetrix?
Please submit a Request for Quotation (RFQ) for P4SMA9.1AHM3_A/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for P4SMA9.1AHM3_A/I reliable?
The price and inventory of P4SMA9.1AHM3_A/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for P4SMA9.1AHM3_A/I is usually 5 days.
3.What payment methods are accepted for P4SMA9.1AHM3_A/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for P4SMA9.1AHM3_A/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for P4SMA9.1AHM3_A/I?
P4SMA9.1AHM3_A/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your P4SMA9.1AHM3_A/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for P4SMA9.1AHM3_A/I?
For technical support, including P4SMA9.1AHM3_A/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your P4SMA9.1AHM3_A/I requirements.
6.How does Aetrix verify that P4SMA9.1AHM3_A/I is sourced from the original manufacturer or authorized distributors?
All P4SMA9.1AHM3_A/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that P4SMA9.1AHM3_A/I meets industry standards.
7.What is the process for return or replacement of P4SMA9.1AHM3_A/I?
All P4SMA9.1AHM3_A/I units undergo pre-shipment inspection (PSI). If there is an issue with P4SMA9.1AHM3_A/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The P4SMA9.1AHM3_A/I part is unused and in its original packaging.
Return procedure for P4SMA9.1AHM3_A/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
P4SMA9.1AHM3_A/I Tags
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DESD3V3E1BL-7B
Diodes Incorporated
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Toshiba Semiconductor and Storage
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Diodes Incorporated
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