Vishay General Semiconductor - Diodes Division P6KE10CHE3/73
- Part No.:
- P6KE10CHE3/73
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-204AC, DO-15, Axial
- Datasheet:
-
P6KE10CHE3/73.pdf
- Description:
- TVS DIODE 8.1VWM 15VC DO204AC
- Quantity:
- Payment:

- Shipping:

Inventory:8,868
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
P6KE10CHE3/73 from Vishay General Semiconductor is a uni-directional Transient Voltage Suppressor (TVS) diode in DO-204AC (DO-15) package, designed for primary overvoltage protection of DC power rails and signal lines. It features 600 W peak pulse power (10/1000 μs), 14.5 V maximum clamping voltage at 41.4 A peak pulse current, 8.55 V stand-off voltage, and AEC-Q101 qualification for automotive-grade reliability.
For engineers reviewing the P6KE10CHE3/73 datasheet, P6KE10CHE3/73 pinout, P6KE10CHE3/73 application, or P6KE10CHE3/73 equivalent, key selection criteria include clamping voltage margin relative to protected IC VDD, surge current handling under IEC 61000-4-5 Level 4, thermal resistance (RθJL = 20 °C/W), and RoHS-compliant AEC-Q101 qualification status.
Technical Context
This TVS operates as a voltage-clamped shunt protector: under normal conditions it presents high impedance (>1 MΩ at 8.55 V), but avalanches rapidly when transient voltage exceeds its 9.5–10.5 V breakdown range (IT = 1.0 mA). Its glass-passivated junction ensures stable breakdown and low leakage (<10 μA at VWM).
Designed for unidirectional DC line protection, it uses cathode-band polarity marking and delivers sub-nanosecond response time with low incremental surge resistance-critical for safeguarding MOSFET gates, microcontroller I/O, and sensor supply inputs against ESD and inductive switching transients.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Stand-off Voltage (VWM) | 8.55 V - Maximum continuous DC operating voltage before leakage exceeds 10 μA; sets upper limit for protected circuit's nominal rail. |
| Breakdown Voltage (VBR) | 9.5–10.5 V at 1.0 mA - Confirmed avalanche initiation range; defines minimum overvoltage threshold for clamping action. |
| Clamping Voltage (VC) | 14.5 V at 41.4 A (10/1000 μs) - Maximum voltage seen by downstream circuit during worst-case surge; determines required IC absolute maximum rating margin. |
| Peak Pulse Power (PPPM) | 600 W - Sustained energy absorption capability under standardized 10/1000 μs waveform; enables compliance with IEC 61000-4-5 Level 4 (4 kV) |
| Thermal Resistance (RθJL) | 20 °C/W - Junction-to-lead thermal path efficiency; supports 5.0 W steady-state dissipation at TL = 75 °C without heatsink. |
| AEC-Q101 Qualified | Yes - Validated for automotive applications per stress test requirements including HTOL, TC, and HAST; suitable for engine control, body electronics, and ADAS power domains. |
| RoHS & Whisker Rating | RoHS compliant (E3/HE3 suffix); HE3 meets JESD 201 Class 2 whisker resistance - ensures long-term solder joint integrity in high-reliability assemblies. |
Pinout & Package
Package: DO-204AC (DO-15), axial-leaded, molded epoxy case meeting UL 94 V-0 flammability rating. Matte tin-plated leads, solderable per J-STD-002/JESD 22-B102. Cathode identified by color band.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Low-side reference terminal | Connected to ground or lowest potential node; completes shunt path during avalanche conduction. |
| Cathode | High-side transient input terminal | Connected to protected line (e.g., 12 V rail or sensor output); avalanche initiates here when voltage exceeds VBR. |
Key Features
| Feature | Design Value |
|---|---|
| Glass-passivated junction | Ensures stable, repeatable breakdown voltage across temperature (-55 °C to +175 °C) and lifetime; eliminates parameter drift due to surface contamination. |
| 600 W peak pulse power (10/1000 μs) | Supports robust protection against IEC 61000-4-5 surges up to 4 kV (open-circuit) without degradation; validated at 0.01 % duty cycle. |
| Fast response time (<1 ns) | Clamps transients before sensitive ICs experience overstress; critical for protecting high-speed logic and analog front-ends. |
| AEC-Q101 qualification | Confirms suitability for automotive powertrain, chassis, and infotainment systems where reliability under thermal cycling and humidity is mandatory. |
| Low clamping ratio (VC/VBR ≈ 1.43) | Minimizes voltage overshoot during surge events; reduces risk of latch-up or gate oxide damage in downstream MOSFETs and MCUs. |
Applications
| Automotive Power Rail Protection | Industrial Sensor Interface Protection |
|---|---|
|
Use Scenario: 12 V battery-supplied ECUs exposed to load-dump transients (ISO 7637-2 Pulse 5a, up to 60 V/100 ms). IC Role / Device Role / Timing Role: Shunt clamp placed between VBAT and GND upstream of DC-DC converter input. Use Value: Limits peak voltage to ≤14.5 V during 41.4 A surge, preventing overvoltage failure of buck controller ICs rated for 16 V max. |
Use Scenario: 4–20 mA current-loop transmitter outputs connected to PLC analog inputs in factory automation. IC Role / Device Role / Timing Role: Uni-directional TVS on signal line referenced to local ground, guarding ADC driver stage. Use Value: Clamps ESD (IEC 61000-4-2 ±8 kV contact) and cable-induced surges within 1 ns, preserving 16-bit measurement accuracy. |
| Consumer Device USB Port Protection | Telecom Line Card Surge Suppression |
|
Use Scenario: VBUS line (5 V) in USB 2.0 host ports subjected to hot-plug ESD and capacitive coupling noise. IC Role / Device Role / Timing Role: Primary protection device placed immediately after USB connector, before polyfuse and port controller. Use Value: Withstands ±15 kV air discharge (IEC 61000-4-2) while maintaining <10 μA leakage at 5 V, avoiding false disconnect detection. |
Use Scenario: Tip/ring lines in VoIP gateway FXS interfaces exposed to lightning-induced surges (ITU-T K.20/21). IC Role / Device Role / Timing Role: First-stage protector on line side of transformer, coordinated with gas discharge tube (GDT) secondary stage. Use Value: Fast clamping (≤14.5 V) prevents semiconductor damage before GDT fires; RθJL = 20 °C/W enables reliable thermal recovery between surges. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ10A | Same VWM (8.55 V) and VC (14.5 V), but SMC package (higher PPPM = 600 W, lower RθJA = 40 °C/W vs. DO-15's 75 °C/W) | Preferred for higher board-level power density and improved thermal performance in space-constrained industrial PCBs. | Select SMBJ10A when layout allows SMC footprint and enhanced thermal management is required for repeated surge events. |
| 1.5KE10A | Same DO-204AC package and electrical specs, but commercial-grade only (no AEC-Q101 qualification); identical VBR, VC, and PPPM | Suitable for non-automotive applications where AEC-Q101 is not mandated (e.g., consumer power adapters, office equipment). | Choose 1.5KE10A for cost-sensitive commercial designs where automotive qualification is unnecessary and DO-15 footprint must be retained. |
Compared with SMBJ10A, P6KE10CHE3/73 offers AEC-Q101 validation and tighter manufacturing controls for automotive use, while 1.5KE10A provides identical protection performance at lower cost for non-automotive deployments-enabling tiered sourcing without redesign.
Availability
P6KE10CHE3/73 is available at Aetrix Electronics and suitable for automotive electronics, industrial sensor interfaces, consumer USB power protection, and telecom line card surge suppression requiring stable component supply and long-term lifecycle support.
Supply support for P6KE10CHE3/73 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, TVS devices, and optoelectronics with emphasis on reliability, efficiency, and application-specific optimization.
The P6KE series was engineered for cost-effective, high-surge-capability transient protection in space-constrained DC power and signal lines-targeting automotive, industrial, and communications infrastructure where robustness and qualification matter.
FAQ
What is the breakdown voltage range of the P6KE10CHE3/73?
The P6KE10CHE3/73 has a guaranteed breakdown voltage (VBR) range of 9.5 V to 10.5 V at a test current of 1.0 mA. This range is measured per ANSI/IEEE C62.35 and ensures consistent avalanche initiation across production lots and temperature extremes from –55 °C to +175 °C. The P6KE10CHE3/73 maintains this specification under AEC-Q101 stress conditions.
Is the P6KE10CHE3/73 suitable for automotive applications?
Yes, the P6KE10CHE3/73 is AEC-Q101 qualified and explicitly rated for automotive use. Its HE3 suffix denotes compliance with JESD 201 Class 2 whisker resistance and full AEC-Q101 stress testing-including high-temperature operating life, temperature cycling, and unbiased highly accelerated stress testing. The P6KE10CHE3/73 is deployed in engine control units, body control modules, and ADAS power domains.
What is the maximum clamping voltage of the P6KE10CHE3/73 under surge conditions?
The P6KE10CHE3/73 clamps to a maximum of 14.5 V when subjected to a 10/1000 μs waveform peak pulse current of 41.4 A. This value is specified in the Vishay datasheet (Document Number 88369, page 2) and represents the worst-case voltage imposed on protected circuitry during standardized surge events such as IEC 61000-4-5.
Does the P6KE10CHE3/73 have RoHS and lead-free compliance?
Yes, the P6KE10CHE3/73 is RoHS compliant per Directive 2011/65/EU and features matte tin-plated leads. The "HE3" suffix confirms compliance with JESD 201 Class 2 whisker resistance testing, and the molding compound meets UL 94 V-0 flammability standards. All materials documentation is accessible via Vishay's Material Category Policy (Doc. 99912).
How does the P6KE10CHE3/73 differ from the P6KE10A variant?
The P6KE10CHE3/73 differs from the base P6KE10A by its AEC-Q101 qualification (denoted by "H"), RoHS-compliant HE3 plating (Class 2 whisker resistance), and tighter process controls for automotive use. Electrically, both share identical VWM, VBR, VC, and PPPM specs-but only the P6KE10CHE3/73 carries automotive-grade validation and traceable lot-level qualification data.
P6KE10CHE3/73 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-204AC, DO-15, Axial
- Series:
- TransZorb®
- Packaging:
- Tape & Box (TB)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 8.1V
- Voltage - Breakdown (Min):
- 9V
- Voltage - Clamping (Max) @ Ipp:
- 15V
- Current - Peak Pulse (10/1000µs):
- 40A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Through Hole
- Supplier Device Package:
- DO-204AC (DO-15)
P6KE10CHE3/73 FAQ
1.How can I place an order for P6KE10CHE3/73 through Aetrix?
Please submit a Request for Quotation (RFQ) for P6KE10CHE3/73 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for P6KE10CHE3/73 reliable?
The price and inventory of P6KE10CHE3/73 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for P6KE10CHE3/73 is usually 5 days.
3.What payment methods are accepted for P6KE10CHE3/73?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for P6KE10CHE3/73 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for P6KE10CHE3/73?
P6KE10CHE3/73 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your P6KE10CHE3/73 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for P6KE10CHE3/73?
For technical support, including P6KE10CHE3/73 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your P6KE10CHE3/73 requirements.
6.How does Aetrix verify that P6KE10CHE3/73 is sourced from the original manufacturer or authorized distributors?
All P6KE10CHE3/73 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that P6KE10CHE3/73 meets industry standards.
7.What is the process for return or replacement of P6KE10CHE3/73?
All P6KE10CHE3/73 units undergo pre-shipment inspection (PSI). If there is an issue with P6KE10CHE3/73, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The P6KE10CHE3/73 part is unused and in its original packaging.
Return procedure for P6KE10CHE3/73:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
P6KE10CHE3/73 Tags

-
ESD9B5.0ST5G
onsemi

-
DESD3V3E1BL-7B
Diodes Incorporated

-
ESD5Z3.3T1G
onsemi

-
D5V0H1B2LP-7B
Diodes Incorporated

-
D5V0P1B2LP-7B
Diodes Incorporated

-
DESD5V0U1BA-7
Diodes Incorporated

-
ESD5Z5.0T1G
onsemi

-
DESD5V0U1BB-7
Diodes Incorporated

-
D12V0L1B2LP-7B
Diodes Incorporated

-
PESD2V0Y1BSFYL
Nexperia USA Inc.

-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage

-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

