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Vishay General Semiconductor - Diodes Division P6SMB100AHE3_A/I
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- Part No.:
- P6SMB100AHE3_A/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
P6SMB100AHE3_A/I.pdf
- Description:
- TVS DIODE 85.5VWM 137VC DO214AA
- Quantity:
- Payment:
- Shipping:
Inventory:8,138
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Product details
Overview
P6SMB100AHE3_A/I from Vishay General Semiconductor is a unidirectional surface-mount Transient Voltage Suppressor (TVS) diode in SMB (DO-214AA) package, rated for 100 V standoff voltage (VWM), 137 V clamping voltage (VC) at 4.4 A peak pulse current (IPPM), and 600 W peak pulse power (10/1000 μs waveform). It protects MOSFETs, ICs, and sensor signal lines against inductive switching transients and lightning-induced surges in industrial and automotive electronics.
For engineers reviewing the P6SMB100AHE3_A/I datasheet, P6SMB100AHE3_A/I pinout, P6SMB100AHE3_A/I application, or P6SMB100AHE3_A/I equivalent, key selection criteria include clamping voltage margin relative to protected device's absolute maximum rating, unidirectional polarity alignment with DC bias, thermal resistance (RθJA = 100 °C/W), and AEC-Q101 qualification status for automotive use.
Technical Context
This TVS diode operates as a voltage-clamped shunt protector: under normal conditions it presents high impedance (>1 MΩ leakage at 85.5 V), then rapidly avalanches below 105 V breakdown (VBR min/max = 95.0–105 V at 1 mA) to divert surge current away from downstream circuitry. Its glass-passivated junction ensures stable avalanche characteristics and low incremental surge resistance.
Designed for automated SMT placement on PCBs with 5.0 mm × 5.0 mm copper pads per terminal, it meets J-STD-020 MSL Level 1 (peak reflow 260 °C) and supports repetitive surge duty cycles up to 0.01 % at TA = 25 °C. The HE3 suffix confirms RoHS compliance and AEC-Q101 qualification for automotive-grade reliability.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM (Stand-off Voltage) | 85.5 V - Maximum continuous reverse voltage before significant leakage; sets upper limit for protected line's operating DC bias. |
| VBR (Breakdown Voltage) | 95.0–105 V at 1 mA - Confirmed avalanche initiation range; ensures reliable turn-on before downstream IC damage thresholds. |
| VC (Clamping Voltage) | 137 V at IPPM = 4.4 A - Peak voltage seen by protected circuit during 10/1000 μs transient; must stay below IC's absolute max rating. |
| PPPM (Peak Pulse Power) | 600 W - Surge energy handling capacity under standardized 10/1000 μs waveform; defines protection level for common ESD/lightning events. |
| ID (Reverse Leakage) | 1.0 μA at VWM - Negligible standby current; avoids loading of high-impedance sensor or reference circuits. |
| TJ max | +150 °C - Maximum junction temperature; enables operation in under-hood automotive or industrial enclosures without derating. |
| RθJA | 100 °C/W - Thermal resistance from junction to ambient; requires minimum 5.0 mm × 5.0 mm copper pad area for full 600 W rating. |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, matte tin-plated leads, cathode indicated by band.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Low-side connection point | Connected to ground or low-voltage rail; completes shunt path during transient. |
| Cathode | High-side connection point | Connected to protected line (e.g., sensor output, MOSFET gate); carries surge current into ground. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive applications including engine control units and ADAS sensors; supports 15-year lifecycle requirements. |
| 600 W peak pulse power | Handles IEC 61000-4-5 Level 4 surges (4 kV line-to-ground) without degradation when mounted per recommended pad layout. |
| Glass passivated junction | Ensures stable VBR over temperature and lifetime; eliminates parameter drift due to moisture or contamination. |
| MSL Level 1 rating | Compatible with standard lead-free reflow profiles (peak 260 °C); no baking required prior to assembly. |
| Low clamping ratio (VC/VBR ≈ 1.37) | Minimizes overvoltage stress on protected devices; superior to many competing TVS diodes with ratios >1.45. |
Applications
| Automotive Sensor Protection | Industrial Motor Drive Gate Protection |
|---|---|
|
Use Scenario: Protecting analog output lines of pressure/temperature sensors in engine compartments exposed to load dump and ISO 7637-2 pulses. IC Role / Device Role / Timing Role: Unidirectional shunt clamp placed between sensor output and ground, activated only during positive transients. Use Value: Limits voltage to ≤137 V during 100 A/10 ms load dump events, preserving sensor accuracy and preventing ADC saturation. |
Use Scenario: Safeguarding gate drivers of 600 V IGBTs in variable-frequency drives subjected to Miller-induced voltage spikes. IC Role / Device Role / Timing Role: Fast-response TVS connected between gate and source to clamp dv/dt-induced overshoot before driver IC failure. Use Value: Clamps gate-source voltage within 1 ns to prevent false turn-on and destructive latch-up in high-speed switching stages. |
| Telecom Line Interface Protection | Consumer Power Supply Input Protection |
|
Use Scenario: Shielding RS-485 transceivers on outdoor telecom nodes from lightning-induced surges on twisted-pair cabling. IC Role / Device Role / Timing Role: Bidirectional-capable variant used (P6SMB100CA), but P6SMB100AHE3_A/I serves same function in DC-biased lines. Use Value: Absorbs 600 W surge energy while maintaining <1.0 μA leakage, avoiding signal integrity loss on 12 Mbps differential buses. |
Use Scenario: Guarding 12 V input rails of smart home hubs against ESD and AC line transients coupled through wall adapters. IC Role / Device Role / Timing Role: Primary front-end clamp on DC input, coordinated with upstream fuse and downstream LDO. Use Value: Prevents brownout or latch-up in PMICs by limiting input voltage excursions to 137 V during 1 kV/500 Ω contact discharge events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ100A-E3/5B | Same VWM (85.5 V), lower PPPM (400 W), higher RθJA (140 °C/W), non-AEC-Q101. | Limited to commercial-grade consumer/industrial use; insufficient for automotive under-hood thermal cycling. | Select when cost sensitivity outweighs automotive qualification and 600 W surge headroom. |
| 1.5SMC100A | Same VWM/VC specs, larger SMC (DO-214AB) package, higher IFSM (200 A), identical AEC-Q101 option available (1.5SMC100AHE3). | Better thermal dissipation (RθJA = 65 °C/W) but requires larger PCB footprint; suitable for high-reliability industrial power supplies. | Choose when board space allows and higher surge repetition rate or longer pulse handling is needed. |
Compared with SMAJ100A-E3/5B and 1.5SMC100A, P6SMB100AHE3_A/I delivers optimal balance of AEC-Q101 compliance, 600 W surge capability, and compact SMB footprint-making it preferred for space-constrained automotive modules where thermal management relies on defined pad layout rather than bulkier packages.
Availability
P6SMB100AHE3_A/I is available at Aetrix Electronics and suitable for automotive sensor interfaces, industrial motor drive gate protection, telecom line interface hardening, and consumer power supply input protection requiring stable component supply across multi-year production programs.
Supply support for P6SMB100AHE3_A/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, and protection devices with emphasis on reliability, precision, and automotive qualification.
The P6SMB Series targets robust transient suppression in harsh environments, with design focus on AEC-Q101 compliance, low clamping ratio, and compatibility with high-volume SMT manufacturing.
FAQ
What is the clamping voltage of P6SMB100AHE3_A/I at its rated peak pulse current?
The P6SMB100AHE3_A/I has a maximum clamping voltage (VC) of 137 V at 4.4 A peak pulse current (IPPM), measured under the standard 10/1000 μs waveform. This value is critical for ensuring protected components remain below their absolute maximum voltage ratings during surge events. The P6SMB100AHE3_A/I achieves this with a low clamping ratio of approximately 1.37 relative to its nominal breakdown voltage.
Is P6SMB100AHE3_A/I qualified for automotive applications?
Yes, P6SMB100AHE3_A/I is AEC-Q101 qualified, as confirmed by the "HE3" suffix and Vishay documentation. It is rated for operation from −65 °C to +150 °C junction temperature and validated for reliability in automotive subsystems such as engine control, body electronics, and ADAS sensor interfaces. The P6SMB100AHE3_A/I meets stringent vibration, thermal cycling, and humidity testing requirements defined in the AEC-Q101 standard.
What package type does P6SMB100AHE3_A/I use, and what are its mounting requirements?
P6SMB100AHE3_A/I uses the SMB (DO-214AA) surface-mount package with matte tin-plated leads. For full 600 W peak pulse power rating, it must be mounted on 0.2" × 0.2" (5.0 mm × 5.0 mm) copper pads per terminal, per Vishay's recommended layout. The P6SMB100AHE3_A/I complies with J-STD-020 MSL Level 1, supporting standard lead-free reflow without pre-baking.
How does the unidirectional configuration of P6SMB100AHE3_A/I affect circuit integration?
The unidirectional configuration of P6SMB100AHE3_A/I means it conducts only during positive transients relative to its cathode-anode orientation. The cathode band must be connected toward the protected line (e.g., sensor output), and anode to ground. This prevents conduction during normal negative-going signals, unlike bidirectional variants. In DC-biased systems like automotive sensor outputs, the P6SMB100AHE3_A/I provides targeted protection without interfering with signal polarity.
What is the maximum reverse leakage current of P6SMB100AHE3_A/I at its stand-off voltage?
The P6SMB100AHE3_A/I exhibits a maximum reverse leakage current (ID) of 1.0 μA at its stand-off voltage (VWM) of 85.5 V, measured at 25 °C. This ultra-low leakage ensures minimal loading on high-impedance circuits such as precision sensor outputs or reference voltage nodes. The P6SMB100AHE3_A/I maintains this performance across its full operating temperature range, supporting stable operation in battery-powered and low-power systems.
P6SMB100AHE3_A/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- P6SMB, TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 85.5V
- Voltage - Breakdown (Min):
- 95V
- Voltage - Clamping (Max) @ Ipp:
- 137V
- Current - Peak Pulse (10/1000µs):
- 4.4A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -65°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMBJ)
P6SMB100AHE3_A/I FAQ
1.How can I place an order for P6SMB100AHE3_A/I through Aetrix?
Please submit a Request for Quotation (RFQ) for P6SMB100AHE3_A/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for P6SMB100AHE3_A/I reliable?
The price and inventory of P6SMB100AHE3_A/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for P6SMB100AHE3_A/I is usually 5 days.
3.What payment methods are accepted for P6SMB100AHE3_A/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for P6SMB100AHE3_A/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for P6SMB100AHE3_A/I?
P6SMB100AHE3_A/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your P6SMB100AHE3_A/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for P6SMB100AHE3_A/I?
For technical support, including P6SMB100AHE3_A/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your P6SMB100AHE3_A/I requirements.
6.How does Aetrix verify that P6SMB100AHE3_A/I is sourced from the original manufacturer or authorized distributors?
All P6SMB100AHE3_A/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that P6SMB100AHE3_A/I meets industry standards.
7.What is the process for return or replacement of P6SMB100AHE3_A/I?
All P6SMB100AHE3_A/I units undergo pre-shipment inspection (PSI). If there is an issue with P6SMB100AHE3_A/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The P6SMB100AHE3_A/I part is unused and in its original packaging.
Return procedure for P6SMB100AHE3_A/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
P6SMB100AHE3_A/I Tags
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