Vishay General Semiconductor - Diodes Division P6SMB110AHE3_A/I
- Part No.:
- P6SMB110AHE3_A/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
P6SMB110AHE3_A/I.pdf
- Description:
- TVS DIODE 94VWM 152VC DO214AA
- Quantity:
- Payment:

- Shipping:

Inventory:4,854
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Product details
Overview
P6SMB110AHE3_A/I from Vishay General Semiconductor is a unidirectional surface-mount Transient Voltage Suppressor (TVS) diode in SMB (DO-214AA) package, designed for clamping voltage transients on power and signal lines. It features a 110 V breakdown voltage (VBR = 105–116 V at IT = 1.0 mA), 94.0 V maximum stand-off voltage (VWM), 152 V clamping voltage (VC) at 3.9 A peak pulse current, and 600 W peak pulse power rating with 10/1000 μs waveform - used to protect MOSFETs, ICs, and sensor interfaces in automotive and industrial power supplies.
For engineers reviewing the P6SMB110AHE3_A/I datasheet, P6SMB110AHE3_A/I pinout, P6SMB110AHE3_A/I application, or P6SMB110AHE3_A/I equivalent, this AEC-Q101 qualified TVS offers verified transient suppression performance, RoHS-compliant matte tin-plated leads, MSL Level 1 moisture sensitivity, and validated thermal resistance (RθJA = 100 °C/W) for high-reliability embedded systems requiring robust ESD and surge immunity.
Technical Context
This unidirectional TVS operates by avalanche breakdown to clamp transient overvoltages above its VWM threshold while maintaining low leakage (<1.0 μA at 94.0 V). Its glass-passivated junction ensures stable breakdown characteristics and fast response time (<1.0 ns), enabling protection of sensitive downstream circuitry during inductive switching events or lightning-induced surges.
The device is rated for 100 A non-repetitive forward surge current (IFSM, 8.3 ms half-sine), supports continuous power dissipation of 5.0 W at TA = 50 °C, and maintains operation across -65 °C to +150 °C junction temperature range - making it suitable for under-hood automotive modules and industrial motor drive control boards where thermal cycling and long-term reliability are critical.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VBR (min/max) | 105 V / 116 V at 1.0 mA test current - defines precise avalanche onset range for predictable clamping behavior |
| VWM | 94.0 V - maximum continuous reverse operating voltage before significant leakage begins |
| VC @ IPPM | 152 V at 3.9 A - clamped voltage during 600 W 10/1000 μs surge, limiting stress on protected ICs |
| PPPM | 600 W - peak pulse power handling capability per standard 10/1000 μs waveform, duty cycle ≤ 0.01 % |
| IFSM | 100 A - single half-sine surge rating (8.3 ms), supporting protection against inductive kickback in relay/motor circuits |
| TJ max. | +150 °C - enables use in high-temperature environments such as engine control units and power converters |
| RθJA | 100 °C/W - thermal resistance from junction to ambient, informs PCB copper pad sizing for thermal management |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, low-profile case with matte tin-plated leads solderable per J-STD-002 and JESD 22-B102; polarity indicated by cathode band.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Current entry terminal in forward bias | Connected to lower-potential side (e.g., ground or return path) during transient suppression |
| Cathode | Current exit terminal in forward bias; marked with band | Connected to protected line (e.g., 12 V rail or signal input); conducts during reverse transient |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Validated for automotive applications including engine control, body electronics, and ADAS sensors |
| Glass passivated junction | Ensures stable VBR tolerance and long-term reliability under thermal and humidity stress |
| MSL Level 1 rating | Allows unlimited floor life and reflow compatibility up to 260 °C peak without baking |
| 600 W peak pulse power | Provides robust immunity against ISO 7637-2 Pulse 1, 2a, 3a/b and IEC 61000-4-5 surge events |
| Low incremental surge resistance | Minimizes VC overshoot during fast-rising transients, improving protection margin for 3.3 V/5 V logic |
Applications
| Automotive Power Rail Protection | Industrial Sensor Interface Protection |
|---|---|
|
Use Scenario: Protecting 12 V battery-fed ECUs from load dump and alternator ripple transients. IC Role / Device Role / Timing Role: Unidirectional TVS placed between power rail and ground to clamp surges exceeding 94 V. Use Value: Limits peak voltage to 152 V during 3.9 A transients, safeguarding 16 V-rated regulators and CAN transceivers. |
Use Scenario: Shielding analog inputs of pressure/temperature sensors in PLC I/O modules from EFT and ESD. IC Role / Device Role / Timing Role: Standoff protection element on signal line, absorbing sub-100 ns transients before reaching ADC front-end. Use Value: Sub-1 ns response and <1.0 μA leakage at 94 V preserve signal integrity and measurement accuracy. |
| Telecom DC Power Input Protection | Consumer Appliance Motor Drive Protection |
|
Use Scenario: Safeguarding PoE-powered switch ports and base station RF modules from lightning-induced surges. IC Role / Device Role / Timing Role: Primary clamping device on 48 V DC input, coordinated with upstream fuses and common-mode chokes. Use Value: 600 W rating handles IEC 61000-4-5 Combination Wave (1.2/50 μs + 8/20 μs) up to 4 kV line-to-ground. |
Use Scenario: Suppressing back-EMF spikes generated by brushed DC motors in washing machines and HVAC blowers. IC Role / Device Role / Timing Role: Parallel-connected TVS across motor terminals to absorb inductive energy during PWM commutation. Use Value: 100 A IFSM rating withstands repeated 8.3 ms surges, extending MOSFET lifetime in H-bridge drivers. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ110A-E3/5B | Same VWM (94 V), identical SMB package, but lower PPPM = 400 W and higher VC = 177 V at 2.6 A | Limited to lower-energy transients; not recommended for ISO 7637-2 Pulse 5a (load dump) | Select P6SMB110AHE3_A/I when 600 W clamping headroom and automotive-grade qualification are required. |
| 1.5SMC110A | Higher package thermal resistance (RθJA ≈ 125 °C/W), same VBR/VC, but SMC (DO-214AB) footprint - 2.5 mm wider | Requires PCB layout change; less suitable for space-constrained automotive modules | Choose P6SMB110AHE3_A/I for drop-in replacement in SMB-limited layouts and tighter thermal designs. |
Compared with SMAJ110A-E3/5B and 1.5SMC110A, P6SMB110AHE3_A/I delivers superior surge energy handling in the same compact SMB footprint, with AEC-Q101 validation and lower thermal resistance - critical for automotive and industrial applications demanding long-term field reliability under thermal stress.
Availability
P6SMB110AHE3_A/I is available at Aetrix Electronics and suitable for automotive electronic control units, industrial sensor interfaces, telecom DC power inputs, and consumer appliance motor drives requiring stable component supply with full traceability and lifecycle continuity.
Supply support for P6SMB110AHE3_A/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, TVS devices, and optoelectronics with emphasis on reliability, efficiency, and application-specific performance.
The P6SMB Series is engineered for high-energy transient suppression in harsh environments, targeting automotive, industrial, and telecom systems where robustness against ESD, EFT, and surge events is mandatory.
FAQ
What is the clamping voltage of P6SMB110AHE3_A/I at its rated peak pulse current?
The P6SMB110AHE3_A/I has a maximum clamping voltage (VC) of 152 V at 3.9 A peak pulse current (IPPM) under the standard 10/1000 μs waveform. This value is measured per JEDEC standards and guarantees that downstream components experience no more than 152 V during a 600 W transient event - a key parameter for validating protection margins in 12 V and 48 V systems.
Is P6SMB110AHE3_A/I qualified for automotive applications?
Yes, P6SMB110AHE3_A/I is AEC-Q101 qualified, as confirmed by Vishay's ordering code suffix "HE3" and documentation revision 09-Jan-2024. This qualification covers stress tests including high-temperature operating life, temperature cycling, and ESD, making P6SMB110AHE3_A/I suitable for under-hood and chassis-mounted automotive modules where reliability under thermal and mechanical stress is essential.
What is the maximum operating temperature for P6SMB110AHE3_A/I?
The P6SMB110AHE3_A/I has a maximum junction temperature (TJ) of +150 °C and an operating junction/storage temperature range of -65 °C to +150 °C. This wide range supports deployment in engine control units, industrial inverters, and outdoor telecom equipment exposed to extreme ambient conditions - provided PCB thermal design meets the RθJA = 100 °C/W specification.
Does P6SMB110AHE3_A/I have moisture sensitivity level (MSL) rating?
Yes, P6SMB110AHE3_A/I meets MSL Level 1 per J-STD-020, with a maximum lead-free reflow peak temperature of 260 °C. This means the device has unlimited floor life and can be placed directly into reflow ovens without pre-baking - simplifying manufacturing for high-volume automotive and industrial assembly lines.
How does the unidirectional configuration of P6SMB110AHE3_A/I affect its circuit placement?
The unidirectional configuration of P6SMB110AHE3_A/I requires correct polarity orientation: the cathode band must connect to the protected line (e.g., 12 V rail), and the anode to ground. This arrangement allows forward conduction only during negative transients on the line, providing precise clamping above VWM while blocking reverse leakage - unlike bidirectional variants which suppress both polarities without polarity dependency.
P6SMB110AHE3_A/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- P6SMB, TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 94V
- Voltage - Breakdown (Min):
- 105V
- Voltage - Clamping (Max) @ Ipp:
- 152V
- Current - Peak Pulse (10/1000µs):
- 3.9A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -65°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMBJ)
P6SMB110AHE3_A/I FAQ
1.How can I place an order for P6SMB110AHE3_A/I through Aetrix?
Please submit a Request for Quotation (RFQ) for P6SMB110AHE3_A/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for P6SMB110AHE3_A/I reliable?
The price and inventory of P6SMB110AHE3_A/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for P6SMB110AHE3_A/I is usually 5 days.
3.What payment methods are accepted for P6SMB110AHE3_A/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for P6SMB110AHE3_A/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for P6SMB110AHE3_A/I?
P6SMB110AHE3_A/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your P6SMB110AHE3_A/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for P6SMB110AHE3_A/I?
For technical support, including P6SMB110AHE3_A/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your P6SMB110AHE3_A/I requirements.
6.How does Aetrix verify that P6SMB110AHE3_A/I is sourced from the original manufacturer or authorized distributors?
All P6SMB110AHE3_A/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that P6SMB110AHE3_A/I meets industry standards.
7.What is the process for return or replacement of P6SMB110AHE3_A/I?
All P6SMB110AHE3_A/I units undergo pre-shipment inspection (PSI). If there is an issue with P6SMB110AHE3_A/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The P6SMB110AHE3_A/I part is unused and in its original packaging.
Return procedure for P6SMB110AHE3_A/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
P6SMB110AHE3_A/I Tags

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Diodes Incorporated

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Diodes Incorporated

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onsemi

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Diodes Incorporated

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Diodes Incorporated

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Nexperia USA Inc.

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Toshiba Semiconductor and Storage

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Diodes Incorporated
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