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Vishay General Semiconductor - Diodes Division P6SMB110AHE3_B/I
- Part No.:
- P6SMB110AHE3_B/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
P6SMB110AHE3_B/I.pdf
- Description:
- 600W,110V 5%,UNIDIR,SMB TVS
- Quantity:
- Payment:
- Shipping:
Inventory:8,402
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Product details
Overview
P6SMB110AHE3_B/I from Vishay General Semiconductor is a unidirectional surface-mount Transient Voltage Suppressor (TVS) diode in the SMB (DO-214AA) package, designed for clamping voltage transients on power and signal lines. It features a 110 V standoff voltage (VWM), 152 V maximum clamping voltage at 3.9 A peak pulse current, and 600 W peak pulse power capability with a 10/1000 μs waveform - deployed in automotive sensor interfaces, industrial I/O protection, and DC power rail surge suppression.
For engineers reviewing the P6SMB110AHE3_B/I datasheet, P6SMB110AHE3_B/I pinout, P6SMB110AHE3_B/I application, or P6SMB110AHE3_B/I equivalent, key selection criteria include unidirectional polarity, AEC-Q101 qualification, 150 °C max junction temperature, low incremental surge resistance, and compatibility with automated SMT assembly on standard PCB pad layouts.
Technical Context
The P6SMB110AHE3_B/I operates as a silicon avalanche diode that enters breakdown when reverse voltage exceeds its 105–116 V breakdown range (VBR at 1 mA), clamping transient energy to protect downstream circuitry. Its glass-passivated junction ensures stable leakage and long-term reliability under repetitive surge stress.
Thermal performance is defined by RθJA = 100 °C/W and RθJL = 20 °C/W, enabling operation up to 150 °C junction temperature. The device meets J-STD-020 MSL Level 1 and is qualified to AEC-Q101 for automotive use - confirmed by the "HE3" and "_B" suffixes denoting RoHS-compliant, AEC-Q101-qualified construction.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM (Stand-off Voltage) | 94.0 V - Maximum continuous reverse operating voltage before clamping begins; defines safe DC/AC working margin. |
| VBR (Breakdown Voltage) | 105–116 V at 1 mA - Precise avalanche onset range; ensures predictable turn-on during transients. |
| VC (Clamping Voltage) | 152 V at IPPM = 3.9 A - Peak voltage seen by protected circuit during 10/1000 μs surge; critical for IC survival. |
| PPPM (Peak Pulse Power) | 600 W - Energy-handling capacity per IEEE/ANSI C62.35 10/1000 μs waveform; supports robust ESD/EFT immunity. |
| ID (Reverse Leakage) | 1.0 μA at VWM - Ultra-low leakage preserves system efficiency and battery life in always-on circuits. |
| TJ max. | 150 °C - Enables deployment in under-hood automotive environments and high-temperature industrial enclosures. |
| AEC-Q101 Qualified | Yes - Validated for automotive-grade reliability including temperature cycling, HTRB, and surge endurance per AEC specification. |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, low-profile case with matte tin-plated leads solderable per J-STD-002 and JESD 22-B102. Cathode indicated by band marking.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward conduction terminal | Connected to lower-potential side of protected line (e.g., GND or return path); enables unidirectional clamping. |
| Cathode | Reverse-biased clamping terminal | Connected to higher-potential side (e.g., +12 V rail or signal line); conducts avalanche current during overvoltage events. |
Key Features
| Feature | Design Value |
|---|---|
| 600 W peak pulse power (10/1000 μs) | Supports IEC 61000-4-5 Level 4 surge immunity without derating in standard PCB layouts. |
| Glass passivated chip junction | Ensures stable VBR and low leakage over 15+ years in harsh thermal/humidity environments. |
| AEC-Q101 qualification (HE3_B) | Validates suitability for automotive body control modules, ADAS sensors, and infotainment power rails. |
| MSL Level 1 (260 °C peak reflow) | Enables single-pass lead-free reflow without moisture-induced damage or parametric shift. |
| Low incremental surge resistance | Minimizes clamping voltage overshoot during fast-rising transients (<1 ns rise time). |
Applications
| Automotive Sensor Protection | Industrial PLC I/O Protection |
|---|---|
Use Scenario: Protecting CAN/LIN bus transceivers and analog sensor inputs (e.g., pressure, temperature) from load dump and ISO 7637-2 pulses in vehicle ECUs. IC Role / Device Role / Timing Role: Unidirectional TVS placed between signal line and ground to clamp transients before they reach sensitive input stages. Use Value: Maintains signal integrity below 152 V clamping threshold while surviving 12 V/24 V system-level surges per AEC-Q100 stress profiles. |
Use Scenario: Safeguarding digital input/output terminals of programmable logic controllers against field-induced surges from relay coils and motor drives. IC Role / Device Role / Timing Role: Standoff-rated TVS on each I/O channel to absorb repetitive 600 W transients without degradation. Use Value: Eliminates need for external series impedance or RC filtering due to sub-1 μA leakage and fast <1 ps response. |
| DC Power Rail Surge Suppression | Consumer Power Adapter Input Protection |
Use Scenario: Clamping induced switching spikes on 48 V telecom or PoE++ power distribution networks feeding base stations or edge servers. IC Role / Device Role / Timing Role: Primary overvoltage clamp on main DC input rail upstream of DC/DC converters and PMICs. Use Value: Withstands 3.9 A peak pulse current at 152 V clamping, preserving downstream converter FETs and feedback networks. |
Use Scenario: Secondary-side transient protection in USB-C PD adapters and wall chargers exposed to lightning-induced surges via AC mains coupling. IC Role / Device Role / Timing Role: Final-stage TVS on regulated 5–20 V output rails to prevent latch-up or gate oxide rupture in connected devices. Use Value: 94 V VWM provides 20 % margin above 75 V worst-case output fault conditions while maintaining low standby leakage. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ110A-E3/5B | Same VWM/VBR/VC specs but SMA package (DO-214AC); 10 % smaller footprint, 15 % lower PPPM (400 W). | Limited to lower-energy transients; not AEC-Q101 qualified. | Select when board space is constrained and automotive qualification is unnecessary. |
| 1.5KE110A | Through-hole DO-201 package; identical electrical specs but 1.5 kW peak power rating and higher thermal mass. | Requires wave soldering or hand assembly; unsuitable for high-density SMT production. | Choose only for legacy through-hole designs or where manual repairability outweighs automation needs. |
Compared with SMAJ110A-E3/5B and 1.5KE110A, the P6SMB110AHE3_B/I uniquely combines AEC-Q101 qualification, SMB package manufacturability, and 600 W surge handling - making it the optimal choice for new automotive and industrial SMT platforms requiring zero rework risk and full compliance traceability.
Availability
P6SMB110AHE3_B/I is available at Aetrix Electronics and suitable for automotive sensor interfaces, industrial PLC I/O modules, and DC power rail surge suppression requiring stable component supply across multi-year production cycles.
Supply support for P6SMB110AHE3_B/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, MOSFETs, optoelectronics, and passive components with emphasis on reliability and application-specific performance.
The P6SMB Series targets high-reliability transient suppression in automotive, industrial, and telecom systems - engineered for AEC-Q101 compliance, automated assembly, and consistent clamping behavior across temperature and lifetime.
FAQ
What is the maximum clamping voltage of the P6SMB110AHE3_B/I under a 10/1000 μs surge?
The P6SMB110AHE3_B/I has a maximum clamping voltage (VC) of 152 V at a peak pulse current (IPPM) of 3.9 A with a 10/1000 μs waveform. This value is measured per ANSI/IEEE C62.35 and defines the upper voltage limit imposed on protected circuitry during standardized surge events - critical for ensuring downstream ICs remain within absolute maximum ratings.
Is the P6SMB110AHE3_B/I qualified for automotive applications?
Yes, the P6SMB110AHE3_B/I is AEC-Q101 qualified, as confirmed by the "HE3" (RoHS-compliant, AEC-Q101) and "_B" (AEC-Q101 grade code for P6SMB6.8A–P6SMB220A) suffixes. It undergoes stress testing for temperature cycling, high-temperature reverse bias, and surge endurance required for under-hood and chassis-mounted automotive electronics.
What does the "I" in P6SMB110AHE3_B/I indicate?
The "I" in P6SMB110AHE3_B/I denotes the packaging configuration: 13-inch diameter plastic tape and reel with 3200 units per reel. This format supports high-volume SMT placement and is compatible with industry-standard pick-and-place equipment used in automotive and industrial manufacturing lines.
How does the P6SMB110AHE3_B/I compare to bidirectional TVS diodes like P6SMB110CA?
The P6SMB110AHE3_B/I is unidirectional and intended for DC line protection where polarity is fixed (e.g., +12 V rail to GND), whereas P6SMB110CA is bidirectional and suited for AC or differential signal lines. The unidirectional version offers lower leakage (<1 μA vs. ≤5 μA) and tighter VBR tolerance - advantageous in precision power monitoring and low-power always-on systems using the P6SMB110AHE3_B/I.
What is the thermal resistance from junction to ambient for the P6SMB110AHE3_B/I?
The P6SMB110AHE3_B/I has a typical junction-to-ambient thermal resistance (RθJA) of 100 °C/W when mounted on the minimum recommended 0.2" × 0.2" (5.0 mm × 5.0 mm) copper pads per terminal. This value assumes standard FR-4 PCB layout and natural convection cooling - essential for calculating safe power derating above 25 °C ambient temperature in the final design using the P6SMB110AHE3_B/I.
P6SMB110AHE3_B/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- P6SMB, TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 94V
- Voltage - Breakdown (Min):
- 105V
- Voltage - Clamping (Max) @ Ipp:
- 152V
- Current - Peak Pulse (10/1000µs):
- 3.9A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- Telecom
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -65°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMB)
P6SMB110AHE3_B/I FAQ
1.How can I place an order for P6SMB110AHE3_B/I through Aetrix?
Please submit a Request for Quotation (RFQ) for P6SMB110AHE3_B/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for P6SMB110AHE3_B/I reliable?
The price and inventory of P6SMB110AHE3_B/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for P6SMB110AHE3_B/I is usually 5 days.
3.What payment methods are accepted for P6SMB110AHE3_B/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for P6SMB110AHE3_B/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for P6SMB110AHE3_B/I?
P6SMB110AHE3_B/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your P6SMB110AHE3_B/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for P6SMB110AHE3_B/I?
For technical support, including P6SMB110AHE3_B/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your P6SMB110AHE3_B/I requirements.
6.How does Aetrix verify that P6SMB110AHE3_B/I is sourced from the original manufacturer or authorized distributors?
All P6SMB110AHE3_B/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that P6SMB110AHE3_B/I meets industry standards.
7.What is the process for return or replacement of P6SMB110AHE3_B/I?
All P6SMB110AHE3_B/I units undergo pre-shipment inspection (PSI). If there is an issue with P6SMB110AHE3_B/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The P6SMB110AHE3_B/I part is unused and in its original packaging.
Return procedure for P6SMB110AHE3_B/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
P6SMB110AHE3_B/I Tags
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DESD3V3E1BL-7B
Diodes Incorporated
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Diodes Incorporated
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Toshiba Semiconductor and Storage
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Diodes Incorporated
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