Vishay General Semiconductor - Diodes Division P6SMB110AHM3_B/I
- Part No.:
- P6SMB110AHM3_B/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
P6SMB110AHM3_B/I.pdf
- Description:
- 600W,110V 5%,UNIDIR,SMB TVS
- Quantity:
- Payment:

- Shipping:

Inventory:7,307
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
P6SMB110AHM3_B/I from Vishay General Semiconductor is a unidirectional surface-mount Transient Voltage Suppressor (TVS) diode in SMB (DO-214AA) package, rated for 110 V standoff voltage (VWM), 152 V clamping voltage (VC) at 3.9 A peak pulse current (IPPM), and 600 W peak pulse power (10/1000 μs). It protects MOSFETs, ICs, and sensor signal lines against inductive switching transients and lightning-induced surges in automotive and industrial power supplies.
For engineers reviewing the P6SMB110AHM3_B/I datasheet, P6SMB110AHM3_B/I pinout, P6SMB110AHM3_B/I application, or P6SMB110AHM3_B/I equivalent, this device delivers AEC-Q101 qualification, MSL Level 1 moisture sensitivity, and halogen-free RoHS compliance - critical for automotive-grade ESD and surge protection design validation.
Technical Context
The P6SMB110AHM3_B/I operates as a unidirectional avalanche diode with glass-passivated junction, enabling fast response (<1 ns) to transient overvoltages and low incremental surge resistance for stable clamping under repetitive 10/1000 μs pulses at 0.01% duty cycle. Its thermal resistance (RθJA = 100 °C/W) and maximum junction temperature of 150 °C support reliable operation on standard 0.2" × 0.2" copper pads.
Designed for automated SMT placement, it features matte tin-plated leads compliant with J-STD-002 and JESD 22-B102, and meets JESD 201 Class 2 whisker resistance. The cathode band denotes polarity, and its DO-214AA outline ensures compatibility with standard SMB footprint layouts.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM (Stand-off Voltage) | 94.0 V - Maximum continuous reverse operating voltage before clamping begins; defines safe DC/AC working range. |
| VBR (Breakdown Voltage) | 105–116 V at 1.0 mA - Voltage at which avalanche conduction initiates; ensures precise overvoltage threshold activation. |
| VC (Clamping Voltage) | 152 V at IPPM = 3.9 A - Peak voltage seen by protected circuit during 10/1000 μs surge; determines stress on downstream components. |
| PPPM (Peak Pulse Power) | 600 W - Maximum transient energy absorption capability under standardized 10/1000 μs waveform; defines surge robustness. |
| ID (Reverse Leakage) | 1.0 μA at VWM - Minimal leakage current at rated standoff voltage; preserves low-power system integrity. |
| TJ max. | 150 °C - Maximum allowable junction temperature; enables use in under-hood automotive and high-ambient industrial environments. |
| AEC-Q101 Qualified | Yes - Validated for automotive electronic systems per stress test requirements including HTOL, TCT, and ESD. |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, low-profile case with molded UL 94 V-0 compound and cathode band marking. Dimensions: 4.57 mm × 3.94 mm × 2.20 mm (L × W × H).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Current entry terminal (reverse-biased configuration) | Connected to ground or low-side reference; completes clamping path when transient exceeds VWM. |
| Cathode | Current exit terminal (marked with band) | Connected to protected line (e.g., 12 V rail or sensor input); conducts avalanche current to ground during overvoltage. |
Key Features
| Feature | Design Value |
|---|---|
| 600 W peak pulse power (10/1000 μs) | Enables robust protection against IEC 61000-4-5 Level 4 surges (4 kV) without derating on standard PCB pads. |
| AEC-Q101 qualified (HM3 suffix) | Validated for automotive powertrain and body electronics where reliability under thermal cycling and vibration is mandatory. |
| Glass-passivated junction | Ensures stable breakdown characteristics and long-term parameter stability across temperature and lifetime. |
| Halogen-free & RoHS-compliant | Meets EU Directive 2011/65/EU and IPC-1752A material declarations for green manufacturing and end-of-life handling. |
| MSL Level 1 (260 °C peak reflow) | Supports single-pass lead-free reflow soldering without pre-baking, reducing assembly cost and process complexity. |
Applications
| Automotive Power Supply Protection | Industrial Sensor Signal Line Protection |
|---|---|
|
Use Scenario: Protecting 12 V/24 V battery-fed ECUs from load dump and alternator ripple transients. IC Role / Device Role / Timing Role: Unidirectional TVS placed between supply rail and chassis ground to clamp spikes up to 152 V. Use Value: Prevents latch-up or permanent damage to microcontrollers and CAN transceivers during ISO 7637-2 Pulse 5a events. |
Use Scenario: Shielding analog outputs of pressure/temperature sensors from ESD and cable discharge events. IC Role / Device Role / Timing Role: Low-capacitance TVS on 0–5 V or 4–20 mA output lines to suppress sub-100 ns transients. Use Value: Maintains signal fidelity and avoids false triggering in PLC analog input modules per IEC 61000-4-2 Level 4. |
| Telecom DC Power Input Protection | Consumer Appliance Motor Drive Surge Suppression |
|
Use Scenario: Safeguarding PoE-powered switches and base stations against induced lightning surges on 48 V DC inputs. IC Role / Device Role / Timing Role: Primary clamping device upstream of DC-DC converters, absorbing up to 600 W transient energy. Use Value: Eliminates need for secondary crowbar circuits while meeting GR-1089-CORE telecom surge immunity requirements. |
Use Scenario: Suppressing commutation spikes from brushed DC motors in washing machines and HVAC blowers. IC Role / Device Role / Timing Role: Mounted across motor terminals or H-bridge outputs to clamp inductive kickback below 152 V. Use Value: Extends MOSFET lifespan and prevents gate oxide failure in 200–300 V motor drive stages. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ110A-E3/5B | Same VWM (94 V), VC = 177 V at 3.5 A; lower PPPM (400 W); non-AEC-Q101; SMA package (larger RθJA). | Limited to commercial-grade consumer/industrial use; not validated for automotive thermal cycling or humidity testing. | Select when cost sensitivity outweighs automotive qualification and higher clamping voltage is acceptable. |
| 1.5SMC110AHE3_A/H | Same VWM/VC specs; 1.5 kW PPPM; larger SMC (DO-214AB) package; AEC-Q101 qualified; higher thermal mass. | Used where higher surge margin is required (e.g., front-end AC/DC rectifiers), but requires larger PCB area and layout change. | Choose when system-level surge testing exceeds IEC 61000-4-5 Level 4 and board space permits SMC footprint. |
Compared with SMAJ110A-E3/5B, P6SMB110AHM3_B/I offers tighter clamping (152 V vs. 177 V) and automotive qualification; versus 1.5SMC110AHE3_A/H, it provides identical electrical protection in a smaller SMB footprint but with lower absolute surge headroom.
Availability
P6SMB110AHM3_B/I is available at Aetrix Electronics and suitable for automotive ECUs, industrial sensor interfaces, telecom power inputs, and appliance motor drives requiring stable component supply with full traceability and long-term lifecycle support.
Supply support for P6SMB110AHM3_B/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, MOSFETs, optoelectronics, and passive components with emphasis on reliability and application-specific performance.
The P6SMB Series targets high-reliability transient suppression in automotive, industrial, and telecom infrastructure, combining AEC-Q101 qualification, robust surge handling, and SMT manufacturability for mission-critical protection.
FAQ
What is the clamping voltage of the P6SMB110AHM3_B/I under a 10/1000 μs surge?
The P6SMB110AHM3_B/I has a maximum clamping voltage (VC) of 152 V at 3.9 A peak pulse current (IPPM) under the standardized 10/1000 μs waveform. This value is measured per Figure 1 in Vishay document 88370 and defines the upper voltage limit imposed on protected circuitry during transient events - critical for ensuring downstream ICs remain within their absolute maximum ratings.
Is the P6SMB110AHM3_B/I suitable for automotive applications?
Yes, the P6SMB110AHM3_B/I is AEC-Q101 qualified (denoted by the HM3 suffix and _B revision), having passed stress tests including high-temperature operating life, temperature cycling, and ESD. It is explicitly intended for automotive power supply and signal line protection, such as in body control modules and ADAS sensor interfaces where reliability under harsh environmental conditions is mandatory.
What does the "HM3_B/I" suffix indicate in P6SMB110AHM3_B/I?
The "HM3" suffix indicates halogen-free, RoHS-compliant construction with AEC-Q101 qualification; "_B" denotes the revision level (per note on page 3 of document 88370, applicable to P6SMB6.8A–P6SMB220A); and "/I" specifies packaging in 13-inch tape-and-reel format with 3200 units per reel - confirming full compliance with automotive logistics and assembly requirements.
How does the P6SMB110AHM3_B/I compare to bidirectional TVS diodes like P6SMB110CA?
The P6SMB110AHM3_B/I is unidirectional and optimized for DC rail protection with cathode-to-line orientation, whereas P6SMB110CA is bidirectional and suited for AC or differential signal lines. Their VWM (94 V) and VC (152 V) match, but the unidirectional version offers lower leakage (<1 μA) and supports forward conduction - making P6SMB110AHM3_B/I preferable for 12 V/24 V automotive supply rails where polarity is fixed.
What is the thermal resistance and maximum junction temperature of the P6SMB110AHM3_B/I?
The P6SMB110AHM3_B/I has a typical junction-to-ambient thermal resistance (RθJA) of 100 °C/W when mounted on 0.2" × 0.2" copper pads, and a maximum junction temperature (TJ max.) of +150 °C. These values enable reliable operation in under-hood automotive environments and industrial enclosures up to 85 °C ambient, provided power dissipation remains within derated limits per Figure 2 in the datasheet.
P6SMB110AHM3_B/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- P6SMB, TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 94V
- Voltage - Breakdown (Min):
- 105V
- Voltage - Clamping (Max) @ Ipp:
- 152V
- Current - Peak Pulse (10/1000µs):
- 3.9A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- Telecom
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -65°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMB)
P6SMB110AHM3_B/I FAQ
1.How can I place an order for P6SMB110AHM3_B/I through Aetrix?
Please submit a Request for Quotation (RFQ) for P6SMB110AHM3_B/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for P6SMB110AHM3_B/I reliable?
The price and inventory of P6SMB110AHM3_B/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for P6SMB110AHM3_B/I is usually 5 days.
3.What payment methods are accepted for P6SMB110AHM3_B/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for P6SMB110AHM3_B/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for P6SMB110AHM3_B/I?
P6SMB110AHM3_B/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your P6SMB110AHM3_B/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for P6SMB110AHM3_B/I?
For technical support, including P6SMB110AHM3_B/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your P6SMB110AHM3_B/I requirements.
6.How does Aetrix verify that P6SMB110AHM3_B/I is sourced from the original manufacturer or authorized distributors?
All P6SMB110AHM3_B/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that P6SMB110AHM3_B/I meets industry standards.
7.What is the process for return or replacement of P6SMB110AHM3_B/I?
All P6SMB110AHM3_B/I units undergo pre-shipment inspection (PSI). If there is an issue with P6SMB110AHM3_B/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The P6SMB110AHM3_B/I part is unused and in its original packaging.
Return procedure for P6SMB110AHM3_B/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
P6SMB110AHM3_B/I Tags

-
ESD9B5.0ST5G
onsemi

-
DESD3V3E1BL-7B
Diodes Incorporated

-
ESD5Z3.3T1G
onsemi

-
D5V0H1B2LP-7B
Diodes Incorporated

-
D5V0P1B2LP-7B
Diodes Incorporated

-
DESD5V0U1BA-7
Diodes Incorporated

-
ESD5Z5.0T1G
onsemi

-
DESD5V0U1BB-7
Diodes Incorporated

-
D12V0L1B2LP-7B
Diodes Incorporated

-
PESD2V0Y1BSFYL
Nexperia USA Inc.

-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage

-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

