Vishay General Semiconductor - Diodes Division P6SMB12AHE3/5B
- Part No.:
- P6SMB12AHE3/5B
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
P6SMB12AHE3/5B.pdf
- Description:
- TVS DIODE 10.2VWM 16.7VC DO214AA
- Quantity:
- Payment:

- Shipping:

Inventory:5,684
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
P6SMB12AHE3/5B from Vishay General Semiconductor is a unidirectional surface-mount Transient Voltage Suppressor (TVS) diode in SMB (DO-214AA) package, designed for clamping voltage transients on power and signal lines. It features a 12 V breakdown voltage (VBR = 11.4–12.6 V at IT = 1.0 mA), 10.2 V stand-off voltage (VWM), 16.7 V maximum clamping voltage (VC) at 35.9 A peak pulse current, and 600 W peak pulse power rating with 10/1000 µs waveform - used to protect MOSFETs, ICs, and sensor interfaces in automotive and industrial power supplies.
For engineers reviewing the P6SMB12AHE3/5B datasheet, P6SMB12AHE3/5B pinout, P6SMB12AHE3/5B application, or P6SMB12AHE3/5B equivalent, key selection criteria include unidirectional polarity, AEC-Q101 qualification (HE3 suffix), RoHS compliance, 150 °C max junction temperature, and compatibility with automated SMT placement on standard PCB pads per J-STD-002.
Technical Context
This TVS diode operates as a voltage-clamping protection device that enters avalanche conduction when reverse voltage exceeds its breakdown threshold. Its glass-passivated junction ensures stable VBR tolerance (±5%) and low incremental surge resistance, enabling fast response (<1 ns) to ESD and lightning-induced transients.
The device is rated for 600 W peak pulse power under 10/1000 µs waveform with 0.01% duty cycle, and derates linearly above 25 °C ambient using RθJA = 100 °C/W. It supports 100 A non-repetitive forward surge current (IFSM) and meets MSL Level 1 per J-STD-020 with 260 °C reflow peak.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Breakdown Voltage VBR | 11.4–12.6 V at 1.0 mA test current - defines precise avalanche onset for reliable overvoltage triggering |
| Stand-off Voltage VWM | 10.2 V - maximum continuous reverse working voltage before leakage exceeds 5 µA |
| Clamping Voltage VC | 16.7 V at 35.9 A IPPM - limits transient voltage seen by downstream circuitry during surge events |
| Peak Pulse Power PPPM | 600 W with 10/1000 µs waveform - sustains high-energy transients without failure under defined test conditions |
| Junction Temperature Range | –65 °C to +150 °C - enables operation in under-hood automotive and industrial environments |
| AEC-Q101 Qualified | Yes - validated for automotive-grade reliability including temperature cycling, HTRB, and ESD testing |
| Package | SMB (DO-214AA) - standardized 2-pin surface-mount outline with 5.59 mm × 4.06 mm footprint and 2.20 mm height |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, unidirectional polarity with cathode band marking. Dimensions: 5.59 mm × 4.06 mm × 2.20 mm. Matte tin-plated leads, solderable per J-STD-002 and JESD 22-B102.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry / Reverse voltage reference | Connected to lower-potential side of protected line; defines directionality of clamping action |
| Cathode | Avalanche conduction terminal / Clamping output | Marked with band; connected to higher-potential side (e.g., VCC rail or signal line); conducts during overvoltage |
Key Features
| Feature | Design Value |
|---|---|
| 600 W peak pulse power (10/1000 µs) | Enables robust protection against IEC 61000-4-5 surge events up to 4 kV in industrial power rails |
| AEC-Q101 qualified (HE3 suffix) | Validated for automotive applications including engine control units and body electronics modules |
| Glass passivated junction | Ensures stable VBR over time and temperature, with <0.1 %/°C drift coefficient |
| MSL Level 1 (260 °C peak) | Supports lead-free reflow assembly without preconditioning or baking requirements |
| Low clamping ratio (VC/VBR ≈ 1.39) | Minimizes voltage overshoot during clamping, reducing stress on protected ICs and MOSFETs |
Applications
| Automotive Power Rail Protection | Industrial Sensor Interface Protection |
|---|---|
|
Use Scenario: Protecting 12 V battery-fed ECUs from load dump and alternator ripple transients. IC Role / Device Role / Timing Role: Unidirectional TVS placed between VBAT and ground to clamp surges above 16.7 V. Use Value: Prevents latch-up or permanent damage to microcontrollers and CAN transceivers during ISO 7637-2 pulse 5a events. |
Use Scenario: Safeguarding analog outputs of pressure/temperature sensors in PLC I/O modules. IC Role / Device Role / Timing Role: TVS mounted across sensor supply line to suppress EFT bursts per IEC 61000-4-4. Use Value: Maintains signal integrity by limiting transient-induced offset errors and preventing ADC saturation. |
| Consumer Power Adapter Input Stage | Telecom Line Card Surge Protection |
|
Use Scenario: Input-side transient suppression in AC/DC adapters for smart home devices. IC Role / Device Role / Timing Role: Unidirectional TVS on primary-side DC bus after bridge rectifier. Use Value: Absorbs switching spikes from MOSFETs and prevents overvoltage stress on bulk capacitor and controller IC. |
Use Scenario: Secondary-side protection on Ethernet PHY power rails in enterprise switches. IC Role / Device Role / Timing Role: TVS placed on 3.3 V or 5 V bias lines feeding magnetics and PHY ICs. Use Value: Mitigates induced surges from nearby lightning strikes or cable discharge events without affecting data rate. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ12A-E3/5B | Same VWM (10.2 V), identical SMB package, but lower PPPM (400 W) and higher VC (20.1 V at 20.9 A) | Limited to lower-energy transients; not AEC-Q101 qualified | Select when cost sensitivity outweighs automotive qualification and 600 W surge margin |
| 1.5SMC12A | Same electrical specs (VBR, VWM, VC), but larger SMC (DO-214AB) package (7.11 mm × 6.22 mm) | Requires PCB layout change; higher thermal mass improves sustained surge handling | Choose when board space allows larger footprint and higher thermal inertia is preferred over compactness |
Compared with SMAJ12A-E3/5B and 1.5SMC12A, P6SMB12AHE3/5B uniquely combines AEC-Q101 qualification, 600 W surge rating, and SMB footprint - making it optimal for space-constrained automotive and industrial designs requiring certified reliability.
Availability
P6SMB12AHE3/5B is available at Aetrix Electronics and suitable for automotive power management, industrial sensor interface protection, and consumer adapter input-stage surge suppression requiring stable component supply, full traceability, and long-term lifecycle support.
Supply support for P6SMB12AHE3/5B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, TVS devices, and optoelectronics with emphasis on reliability and application-specific performance.
The P6SMB Series was developed for high-reliability transient suppression in automotive, industrial, and telecom systems - prioritizing low clamping voltage, AEC-Q101 compliance, and automated manufacturability in SMB packaging.
FAQ
What is the breakdown voltage tolerance of P6SMB12AHE3/5B?
The P6SMB12AHE3/5B has a breakdown voltage VBR range of 11.4 V to 12.6 V at 1.0 mA test current, corresponding to ±5% tolerance around the nominal 12 V rating. This tight tolerance ensures consistent clamping behavior across production lots and supports precise overvoltage protection design in critical applications like automotive ECUs where margin control is essential. The value is measured per ANSI/IEEE C62.35 standards.
Is P6SMB12AHE3/5B suitable for bidirectional transient protection?
No, P6SMB12AHE3/5B is a unidirectional TVS diode - indicated by the "A" suffix and cathode band marking. It conducts only in reverse bias during overvoltage events and blocks forward current. For bidirectional protection, Vishay offers the P6SMB12CA variant. Using P6SMB12AHE3/5B in bidirectional configurations risks forward conduction and improper clamping, so correct polarity orientation must be maintained in PCB layout.
What does the "HE3/5B" suffix mean in P6SMB12AHE3/5B?
The "HE3" suffix denotes RoHS-compliant construction with AEC-Q101 qualification, while "5B" specifies packaging in 13-inch diameter plastic tape and reel containing 3200 units. This configuration supports high-volume SMT assembly with verified automotive-grade reliability and full traceability. The HE3 grade distinguishes P6SMB12AHE3/5B from commercial-only variants like P6SMB12A-E3/5B, which lack AEC-Q101 validation.
How does P6SMB12AHE3/5B perform under elevated ambient temperatures?
P6SMB12AHE3/5B derates linearly above 25 °C ambient per Figure 2 in the datasheet, with RθJA = 100 °C/W. At 85 °C ambient, its peak pulse power drops to ~360 W (60% of 600 W), and maximum clamping voltage remains stable due to low temperature coefficient (0.078 %/°C). Designers must verify thermal pad layout - mounting on 5.0 mm × 5.0 mm copper pads per terminal is required to achieve rated performance.
Can P6SMB12AHE3/5B replace older P6SMB12A-E3 parts in existing designs?
Yes, P6SMB12AHE3/5B is a direct functional and mechanical replacement for P6SMB12A-E3, sharing identical electrical specs, SMB package dimensions, and pinout. The HE3 version adds AEC-Q101 qualification and enhanced process controls, making it suitable for upgraded automotive and industrial deployments without PCB or schematic changes. No layout revision is needed - only procurement and documentation updates are required.
P6SMB12AHE3/5B Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- P6SMB, TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Discontinued at Digi-Key
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 10.2V
- Voltage - Breakdown (Min):
- 11.4V
- Voltage - Clamping (Max) @ Ipp:
- 16.7V
- Current - Peak Pulse (10/1000µs):
- 35.9A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -65°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMBJ)
P6SMB12AHE3/5B FAQ
1.How can I place an order for P6SMB12AHE3/5B through Aetrix?
Please submit a Request for Quotation (RFQ) for P6SMB12AHE3/5B on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for P6SMB12AHE3/5B reliable?
The price and inventory of P6SMB12AHE3/5B are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for P6SMB12AHE3/5B is usually 5 days.
3.What payment methods are accepted for P6SMB12AHE3/5B?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for P6SMB12AHE3/5B transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for P6SMB12AHE3/5B?
P6SMB12AHE3/5B orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your P6SMB12AHE3/5B order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for P6SMB12AHE3/5B?
For technical support, including P6SMB12AHE3/5B datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your P6SMB12AHE3/5B requirements.
6.How does Aetrix verify that P6SMB12AHE3/5B is sourced from the original manufacturer or authorized distributors?
All P6SMB12AHE3/5B products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that P6SMB12AHE3/5B meets industry standards.
7.What is the process for return or replacement of P6SMB12AHE3/5B?
All P6SMB12AHE3/5B units undergo pre-shipment inspection (PSI). If there is an issue with P6SMB12AHE3/5B, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The P6SMB12AHE3/5B part is unused and in its original packaging.
Return procedure for P6SMB12AHE3/5B:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
P6SMB12AHE3/5B Tags

-
ESD9B5.0ST5G
onsemi

-
DESD3V3E1BL-7B
Diodes Incorporated

-
ESD5Z3.3T1G
onsemi

-
D5V0H1B2LP-7B
Diodes Incorporated

-
D5V0P1B2LP-7B
Diodes Incorporated

-
DESD5V0U1BA-7
Diodes Incorporated

-
ESD5Z5.0T1G
onsemi

-
DESD5V0U1BB-7
Diodes Incorporated

-
D12V0L1B2LP-7B
Diodes Incorporated

-
PESD2V0Y1BSFYL
Nexperia USA Inc.

-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage

-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

;;2.jpg)