My Inquiry
My Account
Vishay General Semiconductor - Diodes Division P6SMB12AHM3/H
- Part No.:
- P6SMB12AHM3/H
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
P6SMB12AHM3/H.pdf
- Description:
- TVS DIODE 10.2VWM 16.7VC DO214AA
- Quantity:
- Payment:
- Shipping:
Inventory:4,846
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
P6SMB12AHM3/H from Vishay General Semiconductor is a unidirectional surface-mount Transient Voltage Suppressor (TVS) diode in SMB (DO-214AA) package, rated for 12 V breakdown voltage (VBR = 11.4–12.6 V at IT = 1.0 mA), 16.7 V maximum clamping voltage (VC) at 35.9 A peak pulse current (IPPM), and 600 W peak pulse power (10/1000 µs). It protects MOSFETs, ICs, and sensor signal lines against inductive switching transients and ESD in industrial and automotive electronics.
For engineers reviewing the P6SMB12AHM3/H datasheet, P6SMB12AHM3/H pinout, P6SMB12AHM3/H application, or P6SMB12AHM3/H equivalent, key selection criteria include its AEC-Q101 qualification (HM3 suffix), halogen-free RoHS compliance, 100 °C/W junction-to-ambient thermal resistance, unidirectional polarity with cathode band marking, and suitability for automated SMT assembly on 5.0 mm × 5.0 mm copper pads.
Technical Context
This TVS diode operates as a clamping device that remains high-impedance below its reverse standoff voltage (VWM = 10.2 V) and rapidly transitions to low-impedance conduction above its breakdown threshold. Its glass-passivated junction ensures stable VBR tolerance (±5%) and low leakage (<5.0 µA at VWM).
The device delivers 600 W surge capability under standardized 10/1000 µs waveform conditions with 0.01% duty cycle, and exhibits fast response time (<1.0 ns) and low incremental surge resistance - critical for protecting sensitive downstream circuitry from sub-microsecond transients.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VBR (min/max) | 11.4 V / 12.6 V at 1.0 mA test current - defines precise clamping onset window for reliable overvoltage detection |
| VWM | 10.2 V - maximum continuous reverse operating voltage before significant leakage begins |
| VC @ IPPM | 16.7 V at 35.9 A - clamped voltage seen by protected circuit during worst-case 600 W transient |
| IPPM | 35.9 A - peak surge current the device safely shunts without degradation |
| PPPM | 600 W - standardized surge power handling per 10/1000 µs waveform, enabling robust system-level ESD/lightning protection |
| TJ max | +150 °C - enables operation in under-hood automotive and high-temperature industrial environments |
| Package | SMB (DO-214AA) - industry-standard surface-mount outline with 5.59 mm × 4.06 mm footprint and 2.20 mm height |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, unidirectional polarity with cathode band marking on one end. Terminals are matte tin-plated, solderable per J-STD-002 and JESD 22-B102, qualified to MSL level 1 (260 °C peak reflow).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Cathode (banded end) | Reverse-biased anode connection point | Connected to protected line; conducts when transient exceeds VBR, shunting surge to ground |
| Anode | Reference/ground return path | Typically tied to system ground or low-impedance return plane to complete clamping path |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified (HM3 suffix) | Validated for automotive-grade reliability including temperature cycling, HTRB, and ESD testing per stress requirements |
| Halogen-free & RoHS-compliant | Meets environmental compliance mandates for modern automotive and industrial supply chains without compromising surge performance |
| 600 W peak pulse power (10/1000 µs) | Provides margin against IEC 61000-4-5 Level 4 (4 kV) surges and ISO 7637-2 Pulse 1/2a/5a transients |
| Low clamping ratio (VC/VBR ≈ 1.4) | Minimizes voltage overshoot across protected ICs, reducing risk of latch-up or gate oxide damage in MOSFETs |
| Fast response time & low Rsurge | Ensures clamping activation within nanoseconds and limits let-through energy during fast-rising transients |
Applications
| Automotive Power Distribution | Industrial Sensor Signal Protection |
|---|---|
|
Use Scenario: Protecting 12 V battery-fed ECUs from load dump and alternator ripple transients. IC Role / Device Role / Timing Role: Unidirectional TVS placed between power rail and ground to clamp positive-going surges up to 600 W. Use Value: Prevents damage to microcontrollers and CAN transceivers during ISO 7637-2 Pulse 5a events with VC ≤ 16.7 V. |
Use Scenario: Shielding analog output lines of pressure/temperature sensors from ESD and cable discharge events. IC Role / Device Role / Timing Role: Low-capacitance TVS connected across signal and ground to suppress ±8 kV contact ESD per IEC 61000-4-2. Use Value: Maintains signal integrity with <5.0 µA leakage at 10.2 V, avoiding DC offset errors in precision sensor interfaces. |
| Consumer Power Adapter Input Stage | Telecom Line Interface Protection |
|
Use Scenario: Safeguarding AC-DC converter primary-side control ICs from lightning-induced surges on mains input. IC Role / Device Role / Timing Role: Standoff-rated TVS placed across bridge rectifier output to absorb repetitive 10/1000 µs transients. Use Value: Withstands 100 A non-repetitive forward surge (IFSM) and 600 W pulses without derating at TA ≤ 50 °C. |
Use Scenario: Protecting Ethernet PHY or RS-485 transceivers from induced surges on long data cables. IC Role / Device Role / Timing Role: Unidirectional clamping device on VCC or signal line to limit voltage excursions during IEC 61000-4-5 tests. Use Value: Enables compliance with EN 61000-4-5 Level 3 (2 kV) using compact SMB footprint without requiring external series impedance. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ12A-E3/5B | Same VBR range (11.4–12.6 V), but lower PPPM = 400 W and higher VC = 19.9 V at 21.7 A | Limited to lower-energy transients; not suitable for ISO 7637-2 Pulse 5a or IEC 61000-4-5 Level 4 | Select when cost sensitivity outweighs surge margin and board space allows larger SMA footprint |
| 1.5SMC12A | Higher package thermal resistance (RθJA = 125 °C/W vs. 100 °C/W), same VBR/VC, but no AEC-Q101 option | Not qualified for automotive use; requires additional validation for temperature-cycled environments | Choose only for commercial-grade applications where automotive qualification is unnecessary |
Compared with SMAJ12A-E3/5B and 1.5SMC12A, P6SMB12AHM3/H delivers superior surge robustness (600 W), tighter thermal performance (100 °C/W), and certified automotive reliability - making it the preferred choice for safety-critical and high-reliability designs requiring drop-in compatibility with SMB layout.
Availability
P6SMB12AHM3/H is available at Aetrix Electronics and suitable for automotive power modules, industrial sensor interfaces, consumer power adapters, and telecom line protection requiring stable component supply and full AEC-Q101 traceability.
Supply support for P6SMB12AHM3/H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, MOSFETs, optoelectronics, and passive components with emphasis on reliability, efficiency, and application-specific optimization.
The P6SMB Series targets high-energy transient suppression in space-constrained SMT applications, designed specifically for automotive, industrial, and telecom systems demanding AEC-Q101 qualification and consistent 600 W surge capability.
FAQ
What is the maximum clamping voltage of P6SMB12AHM3/H under surge conditions?
The P6SMB12AHM3/H has a maximum clamping voltage (VC) of 16.7 V at 35.9 A peak pulse current (IPPM) under standardized 10/1000 µs waveform conditions. This value is measured per JEDEC standards and ensures protected circuits experience minimal overvoltage during transient events. The P6SMB12AHM3/H maintains this clamping performance across its specified operating temperature range of -65 °C to +150 °C.
Is P6SMB12AHM3/H qualified for automotive applications?
Yes, P6SMB12AHM3/H is AEC-Q101 qualified, as indicated by the "HM3" suffix denoting halogen-free, RoHS-compliant, and automotive-grade construction. It undergoes rigorous stress testing including temperature cycling, highly accelerated life testing (HALT), and ESD verification per AEC-Q101 requirements. The P6SMB12AHM3/H is approved for use in engine control units, body electronics, and ADAS modules where reliability under thermal and mechanical stress is mandatory.
What does the "H" in P6SMB12AHM3/H signify in the ordering code?
The "H" in P6SMB12AHM3/H specifies the packaging format: 7-inch diameter plastic tape and reel, with a standard quantity of 750 devices per reel. This delivery mode supports high-volume SMT assembly lines and is compatible with standard pick-and-place equipment. The full designation P6SMB12AHM3/H confirms halogen-free (HM3) material content and reel-based logistics - distinct from "I" (13-inch reel) or "B" (bulk) variants.
How does P6SMB12AHM3/H compare to bidirectional TVS diodes like P6SMB12CA?
P6SMB12AHM3/H is unidirectional and features a cathode band for polarity identification, while P6SMB12CA is bidirectional with no polarity marking and symmetrical clamping in both directions. The P6SMB12AHM3/H offers lower leakage (<5.0 µA at 10.2 V) and is optimized for DC rail protection, whereas P6SMB12CA suits AC signal lines or differential buses. Their VBR, VC, and PPPM values are identical, but circuit placement and grounding strategy differ fundamentally.
What PCB pad layout is recommended for optimal thermal performance of P6SMB12AHM3/H?
Vishay specifies a minimum 0.2" × 0.2" (5.0 mm × 5.0 mm) copper pad area for each terminal of P6SMB12AHM3/H to achieve rated 600 W pulse power and 100 °C/W thermal resistance. These pads must be connected to internal ground/power planes via multiple thermal vias. Deviating from this layout reduces surge capability and risks thermal runaway during repetitive transients. The P6SMB12AHM3/H datasheet provides exact dimensional tolerances for the SMB (DO-214AA) outline to ensure manufacturability.
P6SMB12AHM3/H Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- P6SMB, TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Discontinued at Digi-Key
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 10.2V
- Voltage - Breakdown (Min):
- 11.4V
- Voltage - Clamping (Max) @ Ipp:
- 16.7V
- Current - Peak Pulse (10/1000µs):
- 35.9A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- Telecom
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -65°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMB)
P6SMB12AHM3/H FAQ
1.How can I place an order for P6SMB12AHM3/H through Aetrix?
Please submit a Request for Quotation (RFQ) for P6SMB12AHM3/H on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for P6SMB12AHM3/H reliable?
The price and inventory of P6SMB12AHM3/H are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for P6SMB12AHM3/H is usually 5 days.
3.What payment methods are accepted for P6SMB12AHM3/H?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for P6SMB12AHM3/H transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for P6SMB12AHM3/H?
P6SMB12AHM3/H orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your P6SMB12AHM3/H order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for P6SMB12AHM3/H?
For technical support, including P6SMB12AHM3/H datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your P6SMB12AHM3/H requirements.
6.How does Aetrix verify that P6SMB12AHM3/H is sourced from the original manufacturer or authorized distributors?
All P6SMB12AHM3/H products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that P6SMB12AHM3/H meets industry standards.
7.What is the process for return or replacement of P6SMB12AHM3/H?
All P6SMB12AHM3/H units undergo pre-shipment inspection (PSI). If there is an issue with P6SMB12AHM3/H, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The P6SMB12AHM3/H part is unused and in its original packaging.
Return procedure for P6SMB12AHM3/H:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
P6SMB12AHM3/H Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
