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Vishay General Semiconductor - Diodes Division P6SMB130AHE3_B/I
- Part No.:
- P6SMB130AHE3_B/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
P6SMB130AHE3_B/I.pdf
- Description:
- 600W,130V 5%,UNIDIR,SMB TVS
- Quantity:
- Payment:
- Shipping:
Inventory:8,839
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Product details
Overview
P6SMB130AHE3_B/I from Vishay General Semiconductor is a unidirectional surface-mount Transient Voltage Suppressor (TVS) diode in SMB (DO-214AA) package, rated for 130 V breakdown voltage (VBR = 124–137 V at IT = 1.0 mA), 179 V maximum clamping voltage (VC) at 3.4 A peak pulse current (IPPM), and 600 W peak pulse power (10/1000 µs waveform). It protects MOSFETs, ICs, and sensor signal lines against inductive switching transients and lightning surges in automotive and industrial power electronics.
For engineers reviewing the P6SMB130AHE3_B/I datasheet, P6SMB130AHE3_B/I pinout, P6SMB130AHE3_B/I application, or P6SMB130AHE3_B/I equivalent, this AEC-Q101 qualified TVS offers verified unidirectional clamping performance, RoHS-compliant matte tin terminations, and MSL Level 1 moisture sensitivity - critical for high-reliability automotive ECUs and industrial motor drives requiring stable surge immunity.
Technical Context
This device operates as a unidirectional avalanche diode with cathode-band polarity marking, leveraging glass-passivated junction technology for low incremental surge resistance and sub-nanosecond response time. Its thermal design relies on 0.2" × 0.2" copper pads per terminal to sustain 600 W peak pulse power under 0.01% duty cycle conditions.
Rated for -65 °C to +150 °C operating junction temperature, it delivers 5.0 W steady-state power dissipation at TA = 50 °C and supports 100 A non-repetitive forward surge current (8.3 ms half-sine), making it suitable for transient suppression in DC bus rails and gate-drive circuits where thermal derating above 25 °C must be applied per Figure 2.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VBR (min/max) | 124 V / 137 V at IT = 1.0 mA - defines precise avalanche onset window for consistent clamping threshold |
| VWM | 111 V - maximum continuous reverse working voltage before leakage exceeds 1.0 µA |
| VC @ IPPM | 179 V at 3.4 A - clamped voltage during 10/1000 µs surge, limiting downstream stress to ≤179 V |
| PPPM | 600 W - peak transient power handling capability under standardized surge waveform |
| RθJA | 100 °C/W - junction-to-ambient thermal resistance on standard PCB pad layout, guiding heatsinking requirements |
| TJ max. | +150 °C - maximum allowable junction temperature, enabling operation in under-hood automotive environments |
| AEC-Q101 Qualified | Yes - validated for automotive-grade reliability including temperature cycling, HTRB, and ESD testing |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, low-profile case with matte tin-plated leads solderable per J-STD-002 and JESD 22-B102. Cathode identified by band marking.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Current entry point in forward bias; connected to protected circuit ground or low-side reference | Provides return path during surge events; must be routed with low-inductance trace to minimize clamping overshoot |
| Cathode | Current exit point in forward bias; connected to line/voltage rail being protected | Acts as the clamping node - voltage at this terminal is limited to ≤179 V during transients |
Key Features
| Feature | Design Value |
|---|---|
| Glass-passivated junction | Ensures stable avalanche characteristics over lifetime and prevents degradation from humidity or contamination |
| MSL Level 1 rating | Allows unlimited floor life and reflow up to 260 °C peak without baking, simplifying SMT assembly |
| 600 W peak pulse power (10/1000 µs) | Supports robust protection against ISO 7637-2 Pulse 1/2a/5a and IEC 61000-4-5 surge events |
| AEC-Q101 qualification (HE3 suffix) | Validates suitability for automotive powertrain and body electronics with zero early-life failure risk |
| Low incremental surge resistance | Minimizes VC – VBR differential, improving clamping accuracy and reducing voltage overshoot |
Applications
| Automotive Engine Control Unit (ECU) | Industrial Motor Drive DC Bus |
|---|---|
Use Scenario: Suppresses load-dump and alternator-switching transients on 12 V battery-fed microcontroller power rails. IC Role / Device Role / Timing Role: Unidirectional TVS clamping element placed between VCC and GND, triggered within <1 ns of overvoltage event. Use Value: Limits voltage to ≤179 V during 100 V/500 ms load dump, preventing brownout or latch-up in 3.3 V/5 V logic supplies. |
Use Scenario: Protects IGBT gate drivers and current-sense amplifiers from commutation-induced spikes on 300–400 V DC link. IC Role / Device Role / Timing Role: Line-to-ground transient suppressor mounted directly at DC bus input terminals. Use Value: Clamps 600 V spikes to ≤179 V within nanoseconds, avoiding gate oxide rupture and false triggering of protection circuits. |
| Telecom Power Supply Input | Consumer Appliance Main Board |
Use Scenario: Shields AC/DC converter primary-side control ICs from lightning-induced surges entering via AC mains. IC Role / Device Role / Timing Role: Secondary-stage unidirectional TVS across bulk capacitor, coordinated with MOV and fuse. Use Value: Absorbs 600 W surge energy without thermal runaway, maintaining system uptime during Category III surge tests. |
Use Scenario: Safeguards MCU GPIOs and display interface lines from ESD and relay-coil kickback in washing machine control boards. IC Role / Device Role / Timing Role: Point-of-use TVS on 12 V auxiliary rail feeding solenoid drivers and Hall sensors. Use Value: Withstands >10 kV contact ESD (IEC 61000-4-2) and 100 A inductive switch-off pulses without parameter shift. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ130A-E3/5B | Same VBR range (124–137 V), but lower PPPM = 400 W and higher VC = 219 V at 2.3 A | Limited to lower-energy transients; unsuitable for ISO 7637-2 Pulse 5a compliance | Select when cost sensitivity outweighs peak surge margin and board space allows larger footprint |
| 1.5SMC130A | Higher package thermal mass (SMC vs. SMB), RθJA = 60 °C/W, VC = 179 V at 3.4 A, same PPPM | Better thermal stability under repetitive surges; requires larger PCB area (7.11 × 6.22 mm vs. 4.57 × 3.94 mm) | Choose for industrial systems with frequent surge exposure and available layout area |
Compared with SMAJ130A-E3/5B and 1.5SMC130A, the P6SMB130AHE3_B/I delivers optimal balance of AEC-Q101 qualification, compact SMB footprint, and full 600 W surge capacity - making it the preferred choice for space-constrained automotive modules and high-volume industrial controllers requiring certified reliability.
Availability
P6SMB130AHE3_B/I is available at Aetrix Electronics and suitable for automotive engine control units, industrial motor drive DC buses, telecom power supply inputs, and consumer appliance main boards requiring stable component supply with guaranteed long-term continuity.
Supply support for P6SMB130AHE3_B/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor designs and manufactures discrete semiconductors including diodes, rectifiers, and TVS devices, with global manufacturing and testing infrastructure focused on high-reliability passive protection components.
The P6SMB Series targets automotive, industrial, and telecom applications demanding AEC-Q101 qualified, surface-mount transient suppression with repeatable clamping performance and robust thermal behavior under surge stress.
FAQ
What is the clamping voltage of P6SMB130AHE3_B/I at its rated peak pulse current?
The P6SMB130AHE3_B/I has a maximum clamping voltage (VC) of 179 V at 3.4 A peak pulse current (IPPM) under the 10/1000 µs waveform condition. This value is measured per Figure 1 in the Vishay datasheet 88370 and defines the upper voltage limit imposed on protected circuitry during a standardized transient event. The P6SMB130AHE3_B/I maintains this clamping performance across its qualified operating temperature range.
Is P6SMB130AHE3_B/I suitable for automotive applications?
Yes, P6SMB130AHE3_B/I is AEC-Q101 qualified, as indicated by the "HE3" and "_B" suffixes in its ordering code. It undergoes stress testing for temperature cycling, high-temperature reverse bias, and ESD per automotive reliability standards. The P6SMB130AHE3_B/I is explicitly recommended for engine control units, body electronics, and ADAS power supplies where sustained surge immunity and zero early-life failure are mandatory.
What does the "_B/I" suffix mean in P6SMB130AHE3_B/I?
The "_B" denotes AEC-Q101 qualification for the P6SMB130AHE3_B/I series (applicable to 6.8 V–220 V variants), while "/I" specifies packaging in 13-inch diameter plastic tape and reel with 3200 units per reel. This format ensures automated SMT placement compatibility and traceable lot control - critical for high-volume automotive and industrial production using the P6SMB130AHE3_B/I.
How does the thermal resistance of P6SMB130AHE3_B/I affect PCB layout?
The P6SMB130AHE3_B/I has a typical junction-to-ambient thermal resistance (RθJA) of 100 °C/W when mounted on 0.2" × 0.2" (5.0 mm × 5.0 mm) copper pads per terminal. To maintain safe junction temperatures during repetitive surges, PCB layout must replicate this pad area and avoid narrow traces. Reducing pad size increases RθJA, risking thermal runaway - a key design constraint for the P6SMB130AHE3_B/I in high-duty-cycle applications.
What is the maximum reverse leakage current for P6SMB130AHE3_B/I at its stand-off voltage?
The P6SMB130AHE3_B/I exhibits a maximum reverse leakage current (ID) of 1.0 µA at its rated stand-off voltage (VWM) of 111 V, measured at TA = 25 °C. This low leakage ensures minimal power loss in always-on protection circuits and avoids false triggering of downstream monitoring circuits - a verified parameter listed in Table 1 of Vishay document 88370 for the P6SMB130AHE3_B/I.
P6SMB130AHE3_B/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- P6SMB, TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 111V
- Voltage - Breakdown (Min):
- 124V
- Voltage - Clamping (Max) @ Ipp:
- 179V
- Current - Peak Pulse (10/1000µs):
- 3.4A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- Telecom
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -65°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMB)
P6SMB130AHE3_B/I FAQ
1.How can I place an order for P6SMB130AHE3_B/I through Aetrix?
Please submit a Request for Quotation (RFQ) for P6SMB130AHE3_B/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for P6SMB130AHE3_B/I reliable?
The price and inventory of P6SMB130AHE3_B/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for P6SMB130AHE3_B/I is usually 5 days.
3.What payment methods are accepted for P6SMB130AHE3_B/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for P6SMB130AHE3_B/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for P6SMB130AHE3_B/I?
P6SMB130AHE3_B/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your P6SMB130AHE3_B/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for P6SMB130AHE3_B/I?
For technical support, including P6SMB130AHE3_B/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your P6SMB130AHE3_B/I requirements.
6.How does Aetrix verify that P6SMB130AHE3_B/I is sourced from the original manufacturer or authorized distributors?
All P6SMB130AHE3_B/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that P6SMB130AHE3_B/I meets industry standards.
7.What is the process for return or replacement of P6SMB130AHE3_B/I?
All P6SMB130AHE3_B/I units undergo pre-shipment inspection (PSI). If there is an issue with P6SMB130AHE3_B/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The P6SMB130AHE3_B/I part is unused and in its original packaging.
Return procedure for P6SMB130AHE3_B/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
P6SMB130AHE3_B/I Tags
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Diodes Incorporated
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Toshiba Semiconductor and Storage
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Diodes Incorporated
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