My Inquiry
My Account
Vishay General Semiconductor - Diodes Division P6SMB150AHE3_A/H
;;2.jpg)
- Part No.:
- P6SMB150AHE3_A/H
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
P6SMB150AHE3_A/H.pdf
- Description:
- TVS DIODE 128VWM 207VC DO214AA
- Quantity:
- Payment:
- Shipping:
Inventory:6,887
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
P6SMB150AHE3_A/H from Vishay General Semiconductor is a unidirectional surface-mount Transient Voltage Suppressor (TVS) diode in the SMB (DO-214AA) package, designed for robust overvoltage protection of sensitive electronics. It features a 150 V standoff voltage (VWM), 179 V minimum breakdown voltage (VBR), 207 V maximum clamping voltage (VC) at 2.9 A peak pulse current (IPPM), and 600 W peak pulse power capability with a 10/1000 μs waveform.
For engineers reviewing the P6SMB150AHE3_A/H datasheet, P6SMB150AHE3_A/H pinout, P6SMB150AHE3_A/H application, or P6SMB150AHE3_A/H equivalent, this device is selected for high-reliability transient suppression in automotive power rails, industrial sensor interfaces, and telecom line protection where AEC-Q101 qualification, low incremental surge resistance, and fast response time are critical.
Technical Context
The P6SMB150AHE3_A/H operates as a unidirectional avalanche diode, clamping transients above its breakdown threshold by entering avalanche conduction. Its glass-passivated junction ensures stable VBR tolerance (±5%) and low leakage (<1.0 μA at 128 V), while the SMB package supports automated placement and meets MSL Level 1 reflow requirements (260 °C peak).
Thermal performance is defined by RθJA = 100 °C/W and RθJL = 20 °C/W, enabling operation up to +150 °C junction temperature. The device sustains repetitive 10/1000 μs pulses at 0.01% duty cycle and handles non-repetitive 8.3 ms half-sine surges up to 100 A (IFSM), making it suitable for inductive load switching and lightning-induced surge events.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM (Stand-off Voltage) | 128 V - Maximum continuous reverse voltage before significant leakage; defines operating margin below clamping threshold |
| VBR (Breakdown Voltage) | 143–158 V at 1.0 mA - Precise avalanche initiation range ensuring predictable turn-on during transients |
| VC (Clamping Voltage) | 207 V at IPPM = 2.9 A - Peak voltage seen by protected circuit under 600 W surge, limiting stress on downstream ICs |
| PPPM (Peak Pulse Power) | 600 W - Sustained energy absorption capability for 10/1000 μs waveform, critical for IEC 61000-4-5 compliance |
| ID (Reverse Leakage) | <1.0 μA at 128 V - Minimal standby power loss and signal integrity impact in high-impedance circuits |
| TJ max. | +150 °C - Enables deployment in under-hood automotive and industrial environments without derating |
| AEC-Q101 Qualified | Yes - Validated for automotive-grade reliability including temperature cycling, HTRB, and ESD per AEC standard |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, matte tin-plated leads, RoHS-compliant and halogen-free (HE3 suffix), MSL Level 1, UL 94 V-0 molding compound.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Cathode (banded end) | Transient current sink | Connected to protected line; conducts avalanche current to ground during overvoltage events |
| Anode | Reference node | Typically tied to system ground or low-impedance return path; completes clamping loop |
Key Features
| Feature | Design Value |
|---|---|
| 600 W peak pulse power (10/1000 μs) | Enables compliance with IEC 61000-4-5 Level 4 surge immunity testing in industrial and automotive systems |
| Low clamping ratio (VC/VBR ≈ 1.37) | Minimizes voltage overshoot across protected components, reducing risk of MOSFET gate oxide failure or IC latch-up |
| Glass passivated junction | Ensures long-term stability of VBR and leakage under thermal cycling and humidity exposure |
| AEC-Q101 qualified (HE3 suffix) | Validated for automotive powertrain and body electronics applications requiring zero-defect reliability |
| MSL Level 1 reflow compatibility | Supports standard lead-free reflow profiles without preconditioning, simplifying manufacturing integration |
Applications
| Automotive Power Rail Protection | Industrial Sensor Interface Protection |
|---|---|
Use Scenario: Protecting 12 V/24 V battery-fed ECUs from load dump and alternator transients. IC Role / Device Role / Timing Role: Unidirectional TVS placed between power rail and ground to clamp positive-going spikes above 128 V. Use Value: Limits peak rail voltage to ≤207 V during 600 W surges, preventing damage to MCU power supplies and CAN transceivers. |
Use Scenario: Safeguarding analog input lines of pressure/temperature sensors in PLC modules exposed to field wiring noise. IC Role / Device Role / Timing Role: Standoff-connected TVS suppressing fast-rising EFT bursts (IEC 61000-4-4) on 4–20 mA or 0–10 V signal paths. Use Value: Sub-100 ns response time and <1.0 μA leakage preserve signal accuracy while absorbing 5 kV contact discharge energy. |
| Telecom Line Surge Protection | Consumer Power Adapter Input Stage |
Use Scenario: Front-end protection of PoE-powered Ethernet switches against lightning-induced surges on RJ45 ports. IC Role / Device Role / Timing Role: Primary clamping device on DC bias lines (e.g., 48 V phantom power), coordinated with GDT secondary protection. Use Value: 207 V clamping voltage ensures safe operation within IEEE 802.3af/at voltage limits while handling 10/1000 μs surges up to 2.9 A. |
Use Scenario: Secondary-side overvoltage suppression in AC/DC adapters after rectification, guarding against transformer flyback spikes. IC Role / Device Role / Timing Role: Unidirectional TVS across bulk capacitor output to prevent capacitor overvoltage and regulator latch-up. Use Value: 150 V VWM provides margin above nominal 12 V or 24 V outputs, while 600 W rating absorbs repetitive switching transients. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ150A-E3/5B | Same VWM (150 V), but lower PPPM (400 W); SMA package (smaller footprint, higher RθJA) | Limited to lower-energy transients; not AEC-Q101 qualified | Select when board space is constrained and surge energy is ≤400 W |
| 1.5KE150A | Through-hole DO-201 package; identical VWM/VBR/VC specs; same 600 W rating | Requires wave soldering or hand assembly; unsuitable for fully SMT lines | Choose for legacy designs or prototyping where manual assembly is acceptable |
Compared with SMAJ150A-E3/5B and 1.5KE150A, the P6SMB150AHE3_A/H delivers AEC-Q101 qualification, SMB package compatibility with high-speed pick-and-place, and optimized thermal resistance (RθJL = 20 °C/W) for sustained surge handling in compact automotive and industrial PCB layouts.
Availability
P6SMB150AHE3_A/H is available at Aetrix Electronics and suitable for automotive ECU protection, industrial sensor interface hardening, and telecom line surge suppression requiring stable component supply, full traceability, and long-term lifecycle support.
Supply support for P6SMB150AHE3_A/H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, MOSFETs, optoelectronics, and passive components with emphasis on reliability, efficiency, and application-specific optimization.
The P6SMB Series is part of Vishay's TRANSZORB® TVS portfolio, engineered for high-energy transient suppression in harsh environments-particularly targeting automotive, industrial, and telecom infrastructure where AEC-Q101 compliance and repeatable clamping performance are mandatory.
FAQ
What is the clamping voltage of P6SMB150AHE3_A/H at its rated peak pulse current?
The P6SMB150AHE3_A/H has a maximum clamping voltage (VC) of 207 V at a peak pulse current (IPPM) of 2.9 A, measured using the standardized 10/1000 μs waveform. This value defines the upper voltage limit imposed on the protected circuit during a 600 W transient event and is critical for ensuring downstream components remain within their absolute maximum ratings. The P6SMB150AHE3_A/H maintains this clamping performance across its specified operating temperature range.
Is P6SMB150AHE3_A/H qualified for automotive applications?
Yes, the P6SMB150AHE3_A/H is AEC-Q101 qualified, as indicated by the "HE3" suffix in its ordering code. This qualification confirms successful completion of stress tests including high-temperature reverse bias (HTRB), temperature cycling, and electrostatic discharge (ESD), making the P6SMB150AHE3_A/H suitable for use in automotive powertrain, body control, and infotainment systems where zero-defect reliability is required.
What does the "_A/H" suffix in P6SMB150AHE3_A/H signify?
The "_A/H" suffix in P6SMB150AHE3_A/H denotes packaging configuration: "A" indicates the base device is unidirectional, and "H" specifies 7-inch plastic tape-and-reel delivery (750 units per reel). The "HE3" portion confirms RoHS-compliance and AEC-Q101 qualification. This full suffix ensures precise identification of electrical type, qualification level, and logistics format for procurement and assembly planning of the P6SMB150AHE3_A/H.
How does the thermal resistance of P6SMB150AHE3_A/H affect its surge handling capability?
The P6SMB150AHE3_A/H has a typical junction-to-lead thermal resistance (RθJL) of 20 °C/W, which enables efficient heat transfer from the silicon die to the PCB copper pads during transient events. This low RθJL allows the P6SMB150AHE3_A/H to sustain repetitive 600 W surges without excessive junction temperature rise, especially when mounted on the recommended 0.2" × 0.2" (5.0 mm × 5.0 mm) copper pads per terminal-directly supporting reliable operation in thermally demanding automotive and industrial environments.
Can P6SMB150AHE3_A/H be used in bidirectional protection circuits?
No, the P6SMB150AHE3_A/H is a unidirectional TVS diode, as confirmed by its "A" suffix and cathode band marking. For bidirectional protection, Vishay offers the P6SMB150CA variant (with "CA" suffix), which provides symmetrical clamping in both polarities. Using the unidirectional P6SMB150AHE3_A/H in a bidirectional application would result in forward conduction and potential failure during negative transients-so correct polarity orientation and device selection are essential for the P6SMB150AHE3_A/H.
P6SMB150AHE3_A/H Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- P6SMB, TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 128V
- Voltage - Breakdown (Min):
- 143V
- Voltage - Clamping (Max) @ Ipp:
- 207V
- Current - Peak Pulse (10/1000µs):
- 2.9A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -65°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMBJ)
P6SMB150AHE3_A/H FAQ
1.How can I place an order for P6SMB150AHE3_A/H through Aetrix?
Please submit a Request for Quotation (RFQ) for P6SMB150AHE3_A/H on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for P6SMB150AHE3_A/H reliable?
The price and inventory of P6SMB150AHE3_A/H are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for P6SMB150AHE3_A/H is usually 5 days.
3.What payment methods are accepted for P6SMB150AHE3_A/H?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for P6SMB150AHE3_A/H transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for P6SMB150AHE3_A/H?
P6SMB150AHE3_A/H orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your P6SMB150AHE3_A/H order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for P6SMB150AHE3_A/H?
For technical support, including P6SMB150AHE3_A/H datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your P6SMB150AHE3_A/H requirements.
6.How does Aetrix verify that P6SMB150AHE3_A/H is sourced from the original manufacturer or authorized distributors?
All P6SMB150AHE3_A/H products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that P6SMB150AHE3_A/H meets industry standards.
7.What is the process for return or replacement of P6SMB150AHE3_A/H?
All P6SMB150AHE3_A/H units undergo pre-shipment inspection (PSI). If there is an issue with P6SMB150AHE3_A/H, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The P6SMB150AHE3_A/H part is unused and in its original packaging.
Return procedure for P6SMB150AHE3_A/H:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
P6SMB150AHE3_A/H Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
