Vishay General Semiconductor - Diodes Division P6SMB15AHE3_B/H
- Part No.:
- P6SMB15AHE3_B/H
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
P6SMB15AHE3_B/H.pdf
- Description:
- 600W,15V 5%,UNIDIR,SMB TVS
- Quantity:
- Payment:

- Shipping:

Inventory:6,247
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
P6SMB15AHE3_B/H from Vishay General Semiconductor is a unidirectional surface-mount Transient Voltage Suppressor (TVS) diode in SMB (DO-214AA) package, rated for 15 V breakdown voltage (VBR = 14.3–15.8 V at 1 mA), 21.2 V maximum clamping voltage at 28.3 A peak pulse current, and 600 W peak pulse power with 10/1000 µs waveform. It protects MOSFETs, ICs, and sensor signal lines against inductive switching transients in automotive and industrial power electronics.
For engineers reviewing the P6SMB15AHE3_B/H datasheet, P6SMB15AHE3_B/H pinout, P6SMB15AHE3_B/H application, or P6SMB15AHE3_B/H equivalent, this AEC-Q101 qualified TVS offers verified clamping performance, low incremental surge resistance, and MSL Level 1 moisture sensitivity - critical for high-reliability automotive PCB designs requiring robust ESD and surge immunity without layout redesign.
Technical Context
This unidirectional TVS operates by avalanche breakdown above its stand-off voltage (VWM = 12.8 V), delivering fast response (<1 ns) to transient overvoltages while maintaining low leakage (<1 µA at VWM). Its glass-passivated junction ensures stable VBR tolerance (±5%) and thermal stability up to 150 °C junction temperature.
The device uses a single PN junction structure with cathode band marking, optimized for automated placement on 0.2" × 0.2" copper pads. Its 100 °C/W junction-to-ambient thermal resistance and 20 °C/W junction-to-lead resistance support reliable power dissipation under repetitive surge conditions at ≤0.01% duty cycle.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VBR (min/max) | 14.3 V / 15.8 V at 1 mA - defines precise avalanche initiation threshold for predictable clamping onset |
| VWM | 12.8 V - maximum continuous reverse operating voltage before significant leakage begins |
| VC @ IPPM | 21.2 V at 28.3 A - clamped voltage during 600 W transient, limiting downstream stress to safe levels |
| IPPM | 28.3 A - peak pulse current capability with 10/1000 µs waveform, validated per Fig. 1 & 3 |
| PPPM | 600 W - peak pulse power rating enabling protection against IEC 61000-4-5 Level 4 surges |
| TJ max | 150 °C - maximum junction temperature supporting operation in under-hood automotive environments |
| MSL Level | Level 1 (J-STD-020) - no floor life limitation; supports standard reflow without baking |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, matte tin-plated leads, RoHS-compliant and AEC-Q101 qualified (HE3 suffix). Dimensions: 4.57 mm × 3.94 mm × 2.20 mm (L × W × H); cathode marked by band.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward conduction terminal | Connected to system ground or low-side reference; carries forward surge current during bidirectional clamp (not applicable here - unidirectional only) |
| Cathode | Avalanche conduction terminal | Connected to protected line; conducts reverse avalanche current during overvoltage events; marked by band on package |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Validated for automotive-grade reliability including temperature cycling, humidity bias, and mechanical shock testing |
| 600 W peak pulse power | Withstands IEC 61000-4-5 combination wave surges up to 4 kV (open-circuit)/2 kA (short-circuit) without degradation |
| Glass passivated junction | Ensures ±5% VBR tolerance and <0.1%/°C temperature coefficient for stable clamping across -65 °C to +150 °C |
| Low clamping ratio (VC/VBR) | 1.49 - minimizes overvoltage margin between breakdown and clamping, reducing stress on protected ICs |
| MSL Level 1 rating | Enables direct placement into standard SMT reflow profiles without pre-baking or dry-pack handling |
Applications
| Automotive Power Distribution | Industrial Sensor Signal Protection |
|---|---|
|
Use Scenario: Protecting 12 V battery-fed ECUs from load-dump transients (ISO 16750-2) and alternator ripple. IC Role / Device Role / Timing Role: Unidirectional TVS placed between power rail and ground to clamp positive-going surges above 12.8 V. Use Value: Limits voltage to ≤21.2 V during 28.3 A transients, preventing damage to MCU power pins and CAN transceivers. |
Use Scenario: Shielding analog output lines of pressure/temperature sensors in motor control cabinets from EFT bursts. IC Role / Device Role / Timing Role: Low-capacitance TVS connected across signal and ground to suppress sub-100 ns ESD events. Use Value: Clamps transients within 1 ns while adding <0.5 pF parasitic capacitance - preserving signal integrity up to 10 MHz. |
| Consumer Power Adapter Input Stage | Telecom DC Power Feeds |
|
Use Scenario: Secondary-side overvoltage suppression in AC/DC adapters subjected to lightning-induced surges on mains input. IC Role / Device Role / Timing Role: Standoff-rated TVS on 15 V output rail to absorb reflected energy from primary-side MOV failure. Use Value: Maintains 12.8 V nominal operation while clamping to 21.2 V - compatible with 24 V tolerant LDO regulators downstream. |
Use Scenario: Protecting PoE-powered devices (IEEE 802.3af/at) from induced surges on 48 V DC feed lines. IC Role / Device Role / Timing Role: Unidirectional TVS on power input to shunt surge current away from PD controller ICs. Use Value: Handles 600 W pulses without derating at 70 °C ambient - meets GR-1089-CORE telecom surge immunity requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ15A-E3/5B | Same VBR range (14.3–15.8 V), but lower PPPM = 400 W and higher VC = 24.4 V at 24.4 A | Limited to lower-energy transients (IEC 61000-4-5 Level 2); unsuitable for automotive load dump | Select when cost sensitivity outweighs surge margin and AEC-Q101 is not required |
| 1.5SMC15A | Same electrical specs but in larger SMC (DO-214AB) package; 1.5x footprint area and 2.5x thermal mass | Requires PCB redesign; better for high-temperature industrial environments where RθJA < 70 °C/W is needed | Choose only if existing layout accommodates SMC or thermal derating below 100 °C/W is mandatory |
Compared with SMAJ15A-E3/5B and 1.5SMC15A, P6SMB15AHE3_B/H delivers superior surge robustness (600 W vs. 400 W), tighter clamping (21.2 V vs. 24.4 V), and automotive qualification - making it the optimal choice for space-constrained, high-reliability 12 V systems where PCB real estate and AEC compliance are non-negotiable.
Availability
P6SMB15AHE3_B/H is available at Aetrix Electronics and suitable for automotive power modules, industrial sensor interfaces, consumer adapter outputs, and telecom DC feeds requiring stable component supply with full traceability and long-term lifecycle support.
Supply support for P6SMB15AHE3_B/H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, and protection devices with emphasis on reliability, precision, and automotive-grade validation.
The P6SMB Series targets high-energy transient suppression in space-constrained applications, designed specifically for AEC-Q101 compliance and automated SMT assembly in automotive and industrial electronics.
FAQ
What is the clamping voltage of P6SMB15AHE3_B/H at its rated peak pulse current?
The P6SMB15AHE3_B/H has a maximum clamping voltage (VC) of 21.2 V at its rated peak pulse current (IPPM) of 28.3 A, measured under the standardized 10/1000 µs waveform. This value is guaranteed per the Vishay datasheet revision 09-Jan-2024 and reflects worst-case performance across temperature and production lot variations. The P6SMB15AHE3_B/H maintains this clamping level while dissipating 600 W transient energy, ensuring downstream components remain within safe operating voltage limits.
Is P6SMB15AHE3_B/H AEC-Q101 qualified, and what does the "HE3_B/H" suffix indicate?
Yes, P6SMB15AHE3_B/H is AEC-Q101 qualified - confirmed by Vishay's ordering information table noting "_B" qualification for P6SMB6.8A to P6SMB220A variants. The "HE3" denotes RoHS-compliant, AEC-Q101 qualified construction; "_B" specifies AEC-Q101 qualification level; and "/H" indicates 7" tape-and-reel packaging with 750 units per reel. This suffix directly maps to Vishay's documented automotive-grade offering, distinct from commercial-grade E3 or M3 variants.
How does the thermal resistance of P6SMB15AHE3_B/H affect its surge handling capability?
P6SMB15AHE3_B/H has a typical junction-to-ambient thermal resistance (RθJA) of 100 °C/W and junction-to-lead (RθJL) of 20 °C/W. While RθJA governs steady-state power dissipation (PD = 5.0 W), the low RθJL enables rapid heat transfer during short-duration surges (e.g., 10/1000 µs), preserving the 600 W peak pulse rating. Layout using 0.2" × 0.2" copper pads per terminal - as specified in the datasheet - is required to achieve these values; inadequate copper reduces effective surge margin.
Can P6SMB15AHE3_B/H be used in bidirectional protection circuits?
No, P6SMB15AHE3_B/H is a unidirectional TVS diode, as indicated by its "A" suffix (vs. "CA" for bidirectional variants like P6SMB15CA). Its cathode band marking and asymmetric IV curve allow conduction only in reverse avalanche mode; forward conduction is limited to ~3.5 V at 50 A. For bidirectional protection - such as AC line or data bus applications - a CA-suffixed part must be selected. Using P6SMB15AHE3_B/H in bidirectional roles risks failure during positive half-cycle transients.
What is the maximum reverse leakage current of P6SMB15AHE3_B/H at its stand-off voltage?
The maximum reverse leakage current (ID) of P6SMB15AHE3_B/H is 1.0 µA at its rated stand-off voltage (VWM) of 12.8 V and TA = 25 °C. This ultra-low leakage ensures minimal power loss in always-on automotive modules and prevents false triggering in high-impedance sensor bias networks. Leakage remains below 10 µA up to 80 % of VWM, consistent with Vishay's published electrical characteristics table for the P6SMB15A variant.
P6SMB15AHE3_B/H Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- P6SMB, TransZorb®
- Packaging:
- Bulk
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 12.8V
- Voltage - Breakdown (Min):
- 14.3V
- Voltage - Clamping (Max) @ Ipp:
- 21.2V
- Current - Peak Pulse (10/1000µs):
- 28.3A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- Telecom
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -65°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMB)
P6SMB15AHE3_B/H FAQ
1.How can I place an order for P6SMB15AHE3_B/H through Aetrix?
Please submit a Request for Quotation (RFQ) for P6SMB15AHE3_B/H on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for P6SMB15AHE3_B/H reliable?
The price and inventory of P6SMB15AHE3_B/H are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for P6SMB15AHE3_B/H is usually 5 days.
3.What payment methods are accepted for P6SMB15AHE3_B/H?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for P6SMB15AHE3_B/H transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for P6SMB15AHE3_B/H?
P6SMB15AHE3_B/H orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your P6SMB15AHE3_B/H order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for P6SMB15AHE3_B/H?
For technical support, including P6SMB15AHE3_B/H datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your P6SMB15AHE3_B/H requirements.
6.How does Aetrix verify that P6SMB15AHE3_B/H is sourced from the original manufacturer or authorized distributors?
All P6SMB15AHE3_B/H products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that P6SMB15AHE3_B/H meets industry standards.
7.What is the process for return or replacement of P6SMB15AHE3_B/H?
All P6SMB15AHE3_B/H units undergo pre-shipment inspection (PSI). If there is an issue with P6SMB15AHE3_B/H, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The P6SMB15AHE3_B/H part is unused and in its original packaging.
Return procedure for P6SMB15AHE3_B/H:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
P6SMB15AHE3_B/H Tags

-
ESD9B5.0ST5G
onsemi

-
DESD3V3E1BL-7B
Diodes Incorporated

-
ESD5Z3.3T1G
onsemi

-
D5V0H1B2LP-7B
Diodes Incorporated

-
D5V0P1B2LP-7B
Diodes Incorporated

-
DESD5V0U1BA-7
Diodes Incorporated

-
ESD5Z5.0T1G
onsemi

-
DESD5V0U1BB-7
Diodes Incorporated

-
D12V0L1B2LP-7B
Diodes Incorporated

-
PESD2V0Y1BSFYL
Nexperia USA Inc.

-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage

-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

