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Vishay General Semiconductor - Diodes Division P6SMB160AHE3_B/I
- Part No.:
- P6SMB160AHE3_B/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
P6SMB160AHE3_B/I.pdf
- Description:
- 600W,160V 5%,UNIDIR,SMB TVS
- Quantity:
- Payment:
- Shipping:
Inventory:2,172
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Product details
Overview
P6SMB160AHE3_B/I from Vishay General Semiconductor is a unidirectional surface-mount Transient Voltage Suppressor (TVS) diode in SMB (DO-214AA) package, designed for clamping voltage transients up to 219 V at 2.7 A peak pulse current (10/1000 μs), with 600 W peak pulse power rating and 136 V stand-off voltage - used to protect MOSFETs, ICs, and sensor signal lines in automotive and industrial power electronics.
For engineers reviewing the P6SMB160AHE3_B/I datasheet, P6SMB160AHE3_B/I pinout, P6SMB160AHE3_B/I application, or P6SMB160AHE3_B/I equivalent, this AEC-Q101 qualified TVS offers verified clamping performance, low incremental surge resistance, and RoHS-compliant matte tin-plated leads suitable for automated SMT assembly and high-reliability automotive-grade designs.
Technical Context
This device operates as a unidirectional avalanche diode with a specified breakdown voltage range of 152–168 V at 1 mA test current, clamping to ≤219 V under 2.7 A transient current. Its thermal resistance is 100 °C/W junction-to-ambient (typical) and 20 °C/W junction-to-lead, enabling effective surge energy dissipation on standard 0.2" × 0.2" copper pads.
The P6SMB160AHE3_B/I features glass passivated chip junction, meets MSL Level 1 per J-STD-020 (peak reflow 260 °C), and exhibits a temperature coefficient of VBR of +0.108 %/°C - ensuring stable overvoltage protection across its -65 °C to +150 °C operating junction temperature range.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Stand-off Voltage (VWM) | 136 V - maximum continuous reverse working voltage before significant leakage; defines safe operating margin below clamping threshold |
| Breakdown Voltage (VBR) | 152–168 V at 1 mA - precise avalanche initiation point; ensures predictable turn-on during transients |
| Clamping Voltage (VC) | 219 V at 2.7 A (10/1000 μs) - peak voltage seen by protected circuit during worst-case surge; critical for downstream component survivability |
| Peak Pulse Power (PPPM) | 600 W - maximum transient energy absorption capability under standardized 10/1000 μs waveform; enables robust ESD and load-dump protection |
| Peak Pulse Current (IPPM) | 2.7 A - maximum non-repetitive surge current it can shunt without failure; directly tied to PCB pad thermal design |
| Operating Temperature Range | -65 °C to +150 °C - supports under-hood automotive and wide-temperature industrial environments without derating loss |
| AEC-Q101 Qualified | Yes - validated for automotive electronic systems per stress test requirements including HTOL, TCT, and ESD; suffix "HE3_B" denotes qualification |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, low-profile case with matte tin-plated leads; polarity indicated by cathode band on unidirectional devices.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Current entry terminal in forward bias; connected to system ground or low-side reference | Provides return path for surge current during clamping; must be routed with low-inductance ground plane |
| Cathode | Current exit terminal in forward bias; connected to protected line (e.g., power rail or signal) | Acts as the "protected node" interface; clamps voltage relative to anode when transient exceeds VWM |
Key Features
| Feature | Design Value |
|---|---|
| 600 W peak pulse power (10/1000 μs) | Enables reliable suppression of ISO 7637-2 load-dump pulses and IEC 61000-4-5 surges in 12 V/24 V automotive systems |
| AEC-Q101 qualified (HE3_B suffix) | Validated for automotive-grade reliability including temperature cycling, humidity testing, and long-term life stress |
| Glass passivated junction | Ensures stable leakage current (<1.0 μA at VWM) and consistent VBR over time and temperature |
| MSL Level 1, 260 °C peak reflow | Supports standard lead-free SMT assembly without moisture sensitivity concerns or pre-bake requirements |
| Low incremental surge resistance | Minimizes clamping voltage overshoot during fast-rising transients (e.g., ESD >15 kV), improving protection margin |
Applications
| Automotive Power Rail Protection | Industrial Sensor Signal Line Protection |
|---|---|
Use Scenario: Protecting 12 V/24 V battery-connected ECUs from load-dump transients (up to 60 V, 400 ms) and alternator switching spikes. IC Role / Device Role / Timing Role: Unidirectional TVS placed between power rail and chassis ground to clamp overvoltage before reaching DC-DC converters and microcontrollers. Use Value: Limits rail voltage to ≤219 V during 2.7 A surge, preventing latch-up or gate oxide damage in downstream SiC/MOSFET drivers. |
Use Scenario: Safeguarding analog output lines (e.g., 4–20 mA current loop sensors) against induced lightning surges in factory automation cabinets. IC Role / Device Role / Timing Role: Low-capacitance TVS mounted at connector entry point to divert common-mode transients before signal conditioning op-amps. Use Value: Clamps transients within nanoseconds while maintaining <1.0 μA leakage at 136 V, preserving signal integrity and calibration stability. |
| Telecom Power Interface Protection | Consumer Device USB/Power Input Protection |
Use Scenario: Shielding PoE-powered equipment (e.g., IP cameras) from AC mains coupling and Ethernet cable ESD events. IC Role / Device Role / Timing Role: Primary TVS on 48 V input rail, coordinated with secondary GDT or polymer PTC for multi-stage surge handling. Use Value: Absorbs 600 W peak energy without degradation, meeting IEC 61000-4-5 Level 4 (4 kV line-earth) requirements. |
Use Scenario: Hardening USB-C PD input stages in portable medical monitors against user-handling ESD and adapter fault transients. IC Role / Device Role / Timing Role: Standoff-rated TVS on VBUS line upstream of buck controller, sized to survive repeated ±8 kV contact discharge. Use Value: Maintains 136 V working margin above 20 V PD max, enabling fail-safe shutdown before controller overvoltage lockout triggers. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ160A-E3/5B | Same VWM (136 V), lower PPPM (400 W), SMA package (smaller footprint, higher RθJA = 140 °C/W) | Limited to lower-energy transients; unsuitable for automotive load-dump where 600 W is required | Select only for space-constrained consumer designs with verified <400 W surge exposure |
| 1.5SMC160A | Same VBR range, identical PPPM (600 W), but SMC package (larger, higher IPPM = 3.1 A) and no AEC-Q101 qualification | Higher surge margin but lacks automotive reliability validation; requires additional qualification effort for vehicle use | Prefer for industrial non-automotive applications needing higher IPPM headroom and larger thermal mass |
Compared with SMAJ160A-E3/5B and 1.5SMC160A, the P6SMB160AHE3_B/I uniquely combines AEC-Q101 qualification, SMB footprint compatibility with automated placement, and full 600 W capability - making it the only drop-in solution for automotive Tier-1 power rail protection without layout or reliability compromise.
Availability
P6SMB160AHE3_B/I is available at Aetrix Electronics and suitable for automotive ECU design, industrial sensor interface development, and telecom power supply hardening requiring stable component supply, AEC-Q101 compliance, and repeatable surge performance.
Supply support for P6SMB160AHE3_B/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, TVS, and MOSFETs with emphasis on reliability, efficiency, and application-specific optimization.
The P6SMB Series targets high-energy transient suppression in automotive, industrial, and telecom infrastructure, engineered for robustness under repetitive surge stress and seamless integration into automated SMT lines.
FAQ
What is the clamping voltage of P6SMB160AHE3_B/I at its rated peak pulse current?
The P6SMB160AHE3_B/I clamps to a maximum of 219 V when subjected to its rated peak pulse current of 2.7 A under the standard 10/1000 μs waveform. This value is measured per Figure 1 in the Vishay datasheet 88370 and defines the upper voltage limit imposed on protected circuitry during surge events - critical for ensuring downstream ICs remain within absolute maximum ratings.
Is P6SMB160AHE3_B/I suitable for automotive applications?
Yes, P6SMB160AHE3_B/I is AEC-Q101 qualified (denoted by the "HE3_B" suffix), having passed stress tests including high-temperature operating life, temperature cycling, and ESD. It is explicitly intended for automotive power rail and module protection, supporting under-hood environments with its -65 °C to +150 °C operating range and 600 W surge capability.
What does the "_B/I" suffix mean in P6SMB160AHE3_B/I?
The "_B" indicates AEC-Q101 qualification for the P6SMB160AHE3_B/I series (applicable to 6.8 V–220 V variants), while "_I" specifies packaging in 13-inch diameter plastic tape and reel with 3200 units per reel. This format ensures compatibility with high-speed pick-and-place machines and supports extended production runs without manual handling.
How does the SMB (DO-214AA) package of P6SMB160AHE3_B/I compare to SMA or SMC alternatives?
The SMB package of P6SMB160AHE3_B/I offers a balanced trade-off: smaller than SMC (lower profile, reduced board area) yet larger than SMA (better thermal dissipation, RθJA = 100 °C/W vs. 140 °C/W for SMA). Its 0.2" × 0.2" copper pad requirement supports reliable 600 W pulse handling without excessive board real estate - unlike SMA, which cannot sustain full-rated power.
What is the maximum reverse leakage current for P6SMB160AHE3_B/I at its stand-off voltage?
At its 136 V stand-off voltage (VWM) and TA = 25 °C, the P6SMB160AHE3_B/I exhibits a maximum reverse leakage current (ID) of 1.0 μA. This low leakage preserves power efficiency in always-on systems and avoids false triggering in high-impedance sensor interfaces - confirmed in Table 1 of Vishay document 88370.
P6SMB160AHE3_B/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- P6SMB, TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 136V
- Voltage - Breakdown (Min):
- 152V
- Voltage - Clamping (Max) @ Ipp:
- 219V
- Current - Peak Pulse (10/1000µs):
- 2.7A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- Telecom
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -65°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMB)
P6SMB160AHE3_B/I FAQ
1.How can I place an order for P6SMB160AHE3_B/I through Aetrix?
Please submit a Request for Quotation (RFQ) for P6SMB160AHE3_B/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for P6SMB160AHE3_B/I reliable?
The price and inventory of P6SMB160AHE3_B/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for P6SMB160AHE3_B/I is usually 5 days.
3.What payment methods are accepted for P6SMB160AHE3_B/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for P6SMB160AHE3_B/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for P6SMB160AHE3_B/I?
P6SMB160AHE3_B/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your P6SMB160AHE3_B/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for P6SMB160AHE3_B/I?
For technical support, including P6SMB160AHE3_B/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your P6SMB160AHE3_B/I requirements.
6.How does Aetrix verify that P6SMB160AHE3_B/I is sourced from the original manufacturer or authorized distributors?
All P6SMB160AHE3_B/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that P6SMB160AHE3_B/I meets industry standards.
7.What is the process for return or replacement of P6SMB160AHE3_B/I?
All P6SMB160AHE3_B/I units undergo pre-shipment inspection (PSI). If there is an issue with P6SMB160AHE3_B/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The P6SMB160AHE3_B/I part is unused and in its original packaging.
Return procedure for P6SMB160AHE3_B/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
P6SMB160AHE3_B/I Tags
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ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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Diodes Incorporated
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D5V0P1B2LP-7B
Diodes Incorporated
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Diodes Incorporated
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ESD5Z5.0T1G
onsemi
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DESD5V0U1BB-7
Diodes Incorporated
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D12V0L1B2LP-7B
Diodes Incorporated
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PESD2V0Y1BSFYL
Nexperia USA Inc.
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Toshiba Semiconductor and Storage
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Diodes Incorporated
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