Vishay General Semiconductor - Diodes Division P6SMB160CAHE3_A/H
- Part No.:
- P6SMB160CAHE3_A/H
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
P6SMB160CAHE3_A/H.pdf
- Description:
- TVS DIODE 136VWM 219VC DO214AA
- Quantity:
- Payment:

- Shipping:

Inventory:6,898
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
P6SMB160CAHE3_A/H from Vishay General Semiconductor is a bidirectional surface-mount Transient Voltage Suppressor (TVS) diode in SMB (DO-214AA) package, designed for clamping voltage transients on signal or power lines. It features 160 V standoff voltage (VWM), 179 V minimum breakdown voltage (VBR), 219 V maximum clamping voltage (VC) at 2.7 A peak pulse current (IPPM), and 600 W peak pulse power (PPPM) with 10/1000 μs waveform - used to protect MOSFETs, ICs, and sensor signal lines in industrial and automotive electronics.
For engineers reviewing the P6SMB160CAHE3_A/H datasheet, P6SMB160CAHE3_A/H pinout, P6SMB160CAHE3_A/H application, or P6SMB160CAHE3_A/H equivalent, key selection criteria include bidirectional clamping capability, AEC-Q101 qualification, 150 °C junction temperature rating, low incremental surge resistance, and compatibility with automated SMT placement on 0.2" × 0.2" copper pads.
Technical Context
This bidirectional TVS operates symmetrically in both polarities, delivering consistent clamping performance without polarity dependence. Its glass-passivated junction ensures stable breakdown behavior and fast response time (<1 ns), while the low Rdyn minimizes voltage overshoot during transient events.
The device is rated for 600 W peak pulse power under 10/1000 μs waveform at 0.01% duty cycle and derates linearly above 25 °C ambient per Fig. 2. Thermal resistance is 100 °C/W (junction-to-ambient) and 20 °C/W (junction-to-lead), supporting reliable operation in compact PCB layouts with minimal heatsinking.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM (Stand-off Voltage) | 136 V - maximum continuous reverse voltage before conduction begins; defines operating margin below clamping threshold |
| VBR (Breakdown Voltage) | 152–168 V at 1 mA - precise voltage at which avalanche conduction initiates; ensures predictable turn-on across temperature |
| VC (Clamping Voltage) | 219 V at IPPM = 2.7 A - peak voltage seen by protected circuit during worst-case transient; determines stress on downstream components |
| PPPM (Peak Pulse Power) | 600 W - energy-handling capacity for 10/1000 μs surges; enables protection against IEC 61000-4-5 Level 4 surges |
| ID (Reverse Leakage) | 1.0 μA max at VWM - negligible standby current; avoids loading sensitive signal lines or battery-powered circuits |
| TJ max | 150 °C - maximum junction temperature; supports operation in under-hood automotive and industrial environments |
| Package | SMB (DO-214AA) - standardized surface-mount outline with 5.59 mm × 4.06 mm footprint and 2.20 mm height; compatible with J-STD-020 MSL level 1 |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, bidirectional configuration with no polarity marking. Terminals are matte tin-plated leads, solderable per J-STD-002 and JESD 22-B102, qualified to JESD 201 Class 2 whisker test.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode / Cathode (symmetrical) | Bidirectional terminal pair | No functional distinction; either terminal serves as anode or cathode depending on transient polarity - enables single-device protection of AC or floating lines |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive applications including engine control, body electronics, and ADAS sensors - meets stress-test requirements for temperature cycling, HTRB, and ESD |
| 600 W peak pulse power | Withstands high-energy transients such as load dump (ISO 7637-2) and EFT bursts (IEC 61000-4-4) without degradation |
| Glass passivated junction | Ensures long-term stability of VBR and leakage over temperature and lifetime; reduces parameter drift in harsh environments |
| Low clamping ratio (VC/VBR ≈ 1.37) | Minimizes overvoltage exposure during clamping - critical for protecting 130–150 V-rated MOSFETs and gate drivers |
| MSL Level 1 (260 °C peak) | Compatible with standard lead-free reflow profiles without pre-baking; simplifies manufacturing integration |
Applications
| Automotive Sensor Signal Protection | Industrial PLC Analog Input Protection |
|---|---|
|
Use Scenario: Protecting CAN/LIN bus transceivers and analog sensor outputs (e.g., pressure, temperature) from ESD and inductive switching noise in vehicle ECUs. IC Role / Device Role / Timing Role: Bidirectional transient clamp placed directly at connector interface or IC input pins. Use Value: Prevents latch-up or damage to 3.3 V/5 V sensor interface ICs during 8 kV contact ESD events and 100 V/μs fast transients. |
Use Scenario: Safeguarding 4–20 mA current loop inputs and ±10 V analog inputs in programmable logic controllers against field wiring surges and ground bounce. IC Role / Device Role / Timing Role: Primary front-end protection element located before precision op-amps and ADCs. Use Value: Limits transient voltage to ≤219 V, preserving signal integrity and avoiding saturation or destruction of input-stage components. |
| Telecom Line Interface Protection | Power Supply Rail Clamping |
|
Use Scenario: Shielding Ethernet PHY interfaces, RS-485 transceivers, and PoE injectors from lightning-induced surges and hot-swap transients. IC Role / Device Role / Timing Role: Secondary-level protection device placed after gas discharge tube (GDT) or polymer PTC in hybrid protection schemes. Use Value: Provides low-clamp, fast-response backup to coarse primary protectors - ensures sub-100 ns reaction to fast-rising threats. |
Use Scenario: Clamping 12 V or 24 V DC power rails in motor drives and power supplies against inductive kickback and load dump. IC Role / Device Role / Timing Role: Parallel-connected transient suppressor across rail and ground, sized for 600 W peak dissipation. Use Value: Absorbs up to 600 W for 1 ms, preventing overvoltage shutdown or MOSFET avalanche failure during relay de-energization. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ160CA | Same VWM (136 V), lower PPPM (400 W), SMA package (smaller footprint, higher RθJA) | Limited to lower-energy transients; unsuitable for ISO 7637-2 load dump simulation | Select when board space is constrained and surge energy is <400 W |
| 1.5KE160CA | Same VWM and VC, but through-hole DO-201 package; higher thermal mass but incompatible with SMT assembly | Requires manual or wave-solder process; not suitable for high-density automated production | Choose only for legacy through-hole designs or prototyping where reflow compatibility is not required |
Compared with SMAJ160CA and 1.5KE160CA, P6SMB160CAHE3_A/H delivers higher surge robustness in an SMT-compatible package with AEC-Q101 qualification - making it the preferred choice for new automotive and industrial designs requiring production scalability and automotive-grade reliability.
Availability
P6SMB160CAHE3_A/H is available at Aetrix Electronics and suitable for automotive sensor modules, industrial PLC analog inputs, telecom line interfaces, and DC power rail clamping requiring stable component supply and full traceability.
Supply support for P6SMB160CAHE3_A/H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability, efficiency, and application-specific optimization.
The P6SMB Series targets high-reliability transient suppression in automotive, industrial, and telecom systems - engineered for robust clamping, AEC-Q101 compliance, and seamless SMT integration without derating penalties.
FAQ
What does the "CA" suffix indicate in P6SMB160CAHE3_A/H?
The "CA" suffix denotes a bidirectional configuration - meaning the P6SMB160CAHE3_A/H conducts and clamps symmetrically in both polarities. Unlike unidirectional variants (e.g., P6SMB160A), it has no cathode band marking and protects AC-coupled or floating signal paths without polarity constraints. This makes P6SMB160CAHE3_A/H ideal for differential buses like RS-485 or transformer-isolated interfaces.
Is P6SMB160CAHE3_A/H suitable for automotive applications?
Yes, P6SMB160CAHE3_A/H is AEC-Q101 qualified (as indicated by the "HE3" suffix and "_A/H" ordering code), having passed stress tests including temperature cycling, high-temperature reverse bias, and ESD. It is specified for under-hood and chassis-mounted use up to 150 °C junction temperature, and commonly deployed in automotive body control modules, ADAS sensor hubs, and infotainment power supplies.
How does the clamping voltage of P6SMB160CAHE3_A/H compare to its breakdown voltage?
P6SMB160CAHE3_A/H has a minimum breakdown voltage (VBR) of 152 V and a maximum clamping voltage (VC) of 219 V at 2.7 A IPPM, yielding a clamping ratio of ~1.37. This tight ratio reflects low dynamic impedance and ensures protected circuits experience minimal overvoltage - critical for safeguarding 150 V-rated MOSFETs or gate drivers without excessive derating.
What is the thermal resistance of P6SMB160CAHE3_A/H, and how does it affect layout?
P6SMB160CAHE3_A/H has a typical junction-to-ambient thermal resistance (RθJA) of 100 °C/W and junction-to-lead (RθJL) of 20 °C/W. To maintain safe operation under repetitive surges, PCB layout must use minimum 0.2" × 0.2" (5.0 mm × 5.0 mm) copper pads per terminal - as specified in the datasheet - to achieve rated power dissipation and avoid thermal runaway during sustained transient events.
Can P6SMB160CAHE3_A/H replace P6SMB160A in a design?
No - P6SMB160CAHE3_A/H is bidirectional, while P6SMB160A is unidirectional with a cathode band. Substituting them requires verifying circuit polarity: P6SMB160A blocks forward current in one direction and clamps reverse transients, whereas P6SMB160CAHE3_A/H clamps in both directions. Using P6SMB160CAHE3_A/H in place of P6SMB160A may cause unintended conduction in DC-biased lines unless the application is inherently AC or floating.
P6SMB160CAHE3_A/H Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- P6SMB, TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 136V
- Voltage - Breakdown (Min):
- 152V
- Voltage - Clamping (Max) @ Ipp:
- 219V
- Current - Peak Pulse (10/1000µs):
- 2.7A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -65°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMBJ)
P6SMB160CAHE3_A/H FAQ
1.How can I place an order for P6SMB160CAHE3_A/H through Aetrix?
Please submit a Request for Quotation (RFQ) for P6SMB160CAHE3_A/H on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for P6SMB160CAHE3_A/H reliable?
The price and inventory of P6SMB160CAHE3_A/H are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for P6SMB160CAHE3_A/H is usually 5 days.
3.What payment methods are accepted for P6SMB160CAHE3_A/H?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for P6SMB160CAHE3_A/H transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for P6SMB160CAHE3_A/H?
P6SMB160CAHE3_A/H orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your P6SMB160CAHE3_A/H order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for P6SMB160CAHE3_A/H?
For technical support, including P6SMB160CAHE3_A/H datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your P6SMB160CAHE3_A/H requirements.
6.How does Aetrix verify that P6SMB160CAHE3_A/H is sourced from the original manufacturer or authorized distributors?
All P6SMB160CAHE3_A/H products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that P6SMB160CAHE3_A/H meets industry standards.
7.What is the process for return or replacement of P6SMB160CAHE3_A/H?
All P6SMB160CAHE3_A/H units undergo pre-shipment inspection (PSI). If there is an issue with P6SMB160CAHE3_A/H, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The P6SMB160CAHE3_A/H part is unused and in its original packaging.
Return procedure for P6SMB160CAHE3_A/H:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
P6SMB160CAHE3_A/H Tags

-
ESD9B5.0ST5G
onsemi

-
DESD3V3E1BL-7B
Diodes Incorporated

-
ESD5Z3.3T1G
onsemi

-
D5V0H1B2LP-7B
Diodes Incorporated

-
D5V0P1B2LP-7B
Diodes Incorporated

-
DESD5V0U1BA-7
Diodes Incorporated

-
ESD5Z5.0T1G
onsemi

-
DESD5V0U1BB-7
Diodes Incorporated

-
D12V0L1B2LP-7B
Diodes Incorporated

-
PESD2V0Y1BSFYL
Nexperia USA Inc.

-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage

-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

;;2.jpg)