Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Vishay General Semiconductor - Diodes Division P6SMB16AHE3_A/I

Part No.:
P6SMB16AHE3_A/I
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
TVS Diodes
Package:
DO-214AA, SMB
Datasheet:
AetrixP6SMB16AHE3_A/I.pdf
Description:
TVS DIODE 13.6VWM 22.5VC DO214AA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:8,499

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

P6SMB16AHE3_A/I from Vishay General Semiconductor is a unidirectional surface-mount Transient Voltage Suppressor (TVS) diode in SMB (DO-214AA) package, designed for clamping voltage transients on power and signal lines. It features a 13.6 V stand-off voltage (VWM), 15.2–16.8 V breakdown voltage (VBR) at 1 mA, 22.5 V maximum clamping voltage (VC) at 26.7 A peak pulse current (IPPM), and 600 W peak pulse power capability with 10/1000 μs waveform - used to protect MOSFETs, ICs, and sensor interfaces in automotive and industrial power rails.

For engineers reviewing the P6SMB16AHE3_A/I datasheet, P6SMB16AHE3_A/I pinout, P6SMB16AHE3_A/I application, or P6SMB16AHE3_A/I equivalent, key selection criteria include unidirectional polarity, AEC-Q101 qualification, 150 °C max junction temperature, low incremental surge resistance, and compatibility with automated SMT assembly on standard PCB pad layouts.

Technical Context

The P6SMB16AHE3_A/I operates as a silicon avalanche diode that enters breakdown when reverse voltage exceeds its VBR range (15.2–16.8 V), limiting transient overvoltage to ≤22.5 V at 26.7 A. Its glass-passivated junction ensures stable leakage (<1.0 μA at VWM) and fast response time (<1.0 ns), enabling protection against ESD, inductive switching spikes, and lightning-induced surges.

Thermally, it exhibits RθJA = 100 °C/W and RθJL = 20 °C/W, supporting operation from –65 °C to +150 °C. The device is rated for 100 A non-repetitive forward surge current (IFSM) and meets J-STD-020 MSL Level 1 with 260 °C reflow peak, confirming suitability for high-reliability automotive electronics per AEC-Q101.

Key Specifications

Parameter Value and Actual Design Meaning
VWM (Stand-off) 13.6 V - Maximum continuous reverse operating voltage before clamping begins
VBR (Breakdown) 15.2–16.8 V at 1.0 mA - Confirmed avalanche onset range under standardized test conditions
VC (Clamping) 22.5 V at IPPM = 26.7 A - Peak voltage seen by protected circuit during 10/1000 μs transient
PPPM 600 W - Surge energy handling capacity with 10/1000 μs waveform at 0.01% duty cycle
ID (Leakage) ≤1.0 μA at VWM - Minimal reverse bias current ensuring low standby power loss
TJ max +150 °C - Maximum junction temperature enabling use in under-hood automotive environments
AEC-Q101 Qualified - Validated for automotive-grade reliability including temperature cycling, HTRB, and ESD

Pinout & Package

Package: SMB (DO-214AA), surface-mount, matte tin-plated leads, RoHS-compliant and halogen-free (HM3 suffix variant), MSL Level 1, 260 °C reflow peak.

Pin/Terminal Circuit Role Design Meaning
Cathode (banded end) Reverse-biased anode connection point Connected to protected line; conducts during overvoltage to shunt current to ground
Anode Reference/ground return path Typically tied to system ground or low-impedance return plane for effective clamping

Key Features

Feature Design Value
600 W peak pulse power Enables robust protection against IEC 61000-4-5 Level 4 surges (4 kV/2 Ω) on 12 V systems
AEC-Q101 qualification Validates reliability for automotive powertrain, body control, and ADAS modules requiring long-term field stability
Low clamping ratio (VC/VBR ≈ 1.45) Minimizes overvoltage stress on downstream ICs while maintaining margin above VWM
MSL Level 1 rating Allows direct placement into high-volume SMT lines without dry-pack or baking preconditioning
Glass-passivated junction Ensures stable electrical parameters across temperature and lifetime, reducing parameter drift in harsh environments

Applications

Automotive Power Rail Protection Industrial Sensor Interface Protection

Use Scenario: Protecting 12 V battery-fed ECUs from load dump and alternator transients.

IC Role / Device Role / Timing Role: Unidirectional TVS placed between power input and ground to clamp spikes above 13.6 V.

Use Value: Limits transient voltage to ≤22.5 V, preventing damage to 3.3 V/5 V regulators and CAN transceivers downstream.

Use Scenario: Shielding analog sensor outputs (e.g., pressure, temperature) from ESD and cable discharge events.

IC Role / Device Role / Timing Role: Low-capacitance TVS on signal line to ground, preserving signal integrity up to 1 MHz.

Use Value: Sub-1.0 μA leakage avoids DC offset errors; fast response prevents latch-up in precision ADC front-ends.

Consumer Power Adapter Input Stage Telecom Line Card Surge Protection

Use Scenario: Safeguarding AC/DC adapter primary-side rectifier and controller ICs from mains-borne surges.

IC Role / Device Role / Timing Role: Standoff-rated TVS across bulk capacitor input to absorb 600 W transients.

Use Value: Withstands repeated 10/1000 μs surges without degradation, extending adapter MTBF in surge-prone regions.

Use Scenario: Front-end protection of Ethernet PHY or DSL line drivers exposed to lightning-induced surges.

IC Role / Device Role / Timing Role: Unidirectional TVS on differential pair supply rail to suppress common-mode transients.

Use Value: 22.5 V clamping ensures compliance with GR-1089-CORE Level 3 (1.5 kV/42 Ω) without sacrificing bandwidth.

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient suppression applications.

Alternative Part Technical Difference Application Difference Selection Advice
SMAJ16A-E3/5B Same VWM (13.6 V), identical SMB package, but lower PPPM (400 W) and higher VC (25.0 V) Limited to lower-energy transients; not AEC-Q101 qualified Select when cost sensitivity outweighs automotive qualification or 600 W surge margin
1.5SMC16A Same VWM/VBR/VC specs, but SMC (DO-214AB) package - 2.5 mm wider, incompatible footprint Requires PCB layout change; higher thermal mass but same electrical performance Choose only if existing design uses SMC pads or requires higher thermal dissipation margin

Compared with SMAJ16A-E3/5B and 1.5SMC16A, the P6SMB16AHE3_A/I delivers certified automotive reliability, superior 600 W surge handling, and drop-in compatibility with standard SMB land patterns - making it optimal for new automotive and industrial designs where qualification and footprint reuse are critical.

Availability

P6SMB16AHE3_A/I is available at Aetrix Electronics and suitable for automotive power distribution, industrial sensor interface protection, and telecom line card surge mitigation requiring stable component supply, full traceability, and long-term lifecycle support.

Supply support for P6SMB16AHE3_A/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, MOSFETs, optoelectronics, and passive components with emphasis on reliability and application-specific performance.

The P6SMB Series targets high-surge industrial and automotive systems, delivering AEC-Q101-qualified TVS diodes optimized for automated SMT assembly, low-profile packaging, and repeatable clamping behavior under repetitive transients.

FAQ

What is the clamping voltage of P6SMB16AHE3_A/I at its rated peak pulse current?

The P6SMB16AHE3_A/I has a maximum clamping voltage (VC) of 22.5 V when subjected to its rated peak pulse current (IPPM) of 26.7 A using the standard 10/1000 μs waveform. This value is measured under defined test conditions per JEDEC standards and ensures predictable overvoltage limiting for protected circuits during surge events.

Is P6SMB16AHE3_A/I suitable for automotive applications?

Yes, P6SMB16AHE3_A/I is AEC-Q101 qualified and carries the HE3 suffix indicating RoHS-compliance and automotive-grade reliability. It supports operating temperatures from –65 °C to +150 °C and passes stress tests including temperature cycling, highly accelerated life testing (HALT), and ESD - making it appropriate for engine control units, body electronics, and ADAS power domains.

What does the "_A/I" suffix mean in P6SMB16AHE3_A/I?

In P6SMB16AHE3_A/I, "A" denotes unidirectional polarity, "HE3" indicates RoHS-compliant and AEC-Q101-qualified construction, and "I" specifies 3200-unit tape-and-reel packaging on 13-inch diameter reels - a standard delivery format for high-volume SMT production lines requiring extended reel length and automated feeder compatibility.

How does P6SMB16AHE3_A/I compare to bidirectional TVS diodes like P6SMB16CA?

P6SMB16AHE3_A/I is unidirectional and intended for DC power line protection where polarity is fixed, offering tighter leakage control (<1.0 μA) and slightly lower clamping voltage than its bidirectional counterpart P6SMB16CA. The latter supports AC or floating signal lines but exhibits symmetric clamping in both directions and higher ID at VWM - so P6SMB16AHE3_A/I is preferred for 12 V/24 V automotive rails with defined ground reference.

What is the thermal resistance of P6SMB16AHE3_A/I and how does it affect PCB layout?

P6SMB16AHE3_A/I has a typical junction-to-ambient thermal resistance (RθJA) of 100 °C/W and junction-to-lead (RθJL) of 20 °C/W. To maintain safe operation under repetitive surges, PCB layout must use minimum 0.2" × 0.2" (5.0 mm × 5.0 mm) copper pads per terminal per Vishay's recommended land pattern - insufficient copper area will cause excessive junction temperature rise and premature failure.

P6SMB16AHE3_A/I Specifications

Product attributes
Attribute value
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package/Case:
DO-214AA, SMB
Series:
P6SMB, TransZorb®
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Type:
Zener
Unidirectional Channels:
1
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
13.6V
Voltage - Breakdown (Min):
15.2V
Voltage - Clamping (Max) @ Ipp:
22.5V
Current - Peak Pulse (10/1000µs):
26.7A
Power - Peak Pulse:
600W
Power Line Protection:
No
Applications:
-
Capacitance @ Frequency:
-
Operating Temperature:
-65°C ~ 150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
DO-214AA (SMBJ)

P6SMB16AHE3_A/I FAQ

1.How can I place an order for P6SMB16AHE3_A/I through Aetrix?

Please submit a Request for Quotation (RFQ) for P6SMB16AHE3_A/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for P6SMB16AHE3_A/I reliable?

The price and inventory of P6SMB16AHE3_A/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for P6SMB16AHE3_A/I is usually 5 days.

3.What payment methods are accepted for P6SMB16AHE3_A/I?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for P6SMB16AHE3_A/I transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for P6SMB16AHE3_A/I?

P6SMB16AHE3_A/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your P6SMB16AHE3_A/I order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for P6SMB16AHE3_A/I?

For technical support, including P6SMB16AHE3_A/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your P6SMB16AHE3_A/I requirements.

6.How does Aetrix verify that P6SMB16AHE3_A/I is sourced from the original manufacturer or authorized distributors?

All P6SMB16AHE3_A/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that P6SMB16AHE3_A/I meets industry standards.

7.What is the process for return or replacement of P6SMB16AHE3_A/I?

All P6SMB16AHE3_A/I units undergo pre-shipment inspection (PSI). If there is an issue with P6SMB16AHE3_A/I, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The P6SMB16AHE3_A/I part is unused and in its original packaging.

Return procedure for P6SMB16AHE3_A/I:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

P6SMB16AHE3_A/I Tags

  • P6SMB16AHE3_A/I
  • P6SMB16AHE3_A/I PDF
  • P6SMB16AHE3_A/I Datasheet
  • P6SMB16AHE3_A/I Specifications
  • P6SMB16AHE3_A/I Images
  • Vishay General Semiconductor - Diodes Division
  • Vishay General Semiconductor - Diodes Division P6SMB16AHE3_A/I
  • Buy P6SMB16AHE3_A/I
  • P6SMB16AHE3_A/I Price
  • P6SMB16AHE3_A/I Distributor
  • P6SMB16AHE3_A/I Supplier
  • P6SMB16AHE3_A/I Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER