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Vishay General Semiconductor - Diodes Division P6SMB180A-E3/5B
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- Part No.:
- P6SMB180A-E3/5B
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
P6SMB180A-E3/5B.pdf
- Description:
- TVS DIODE 154VWM 246VC DO214AA
- Quantity:
- Payment:
- Shipping:
Inventory:2,700
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Product details
Overview
P6SMB180A-E3/5B from Vishay General Semiconductor is a unidirectional surface-mount Transient Voltage Suppressor (TVS) diode in SMB (DO-214AA) package, rated for 180 V standoff voltage (VWM), 246 V clamping voltage (VC) at 2.4 A peak pulse current (IPPM), and 600 W peak pulse power (PPPM) with 10/1000 μs waveform. It protects MOSFETs, ICs, and sensor signal lines against inductive switching transients and lightning surges in industrial and telecom power rails.
For engineers reviewing the P6SMB180A-E3/5B datasheet, P6SMB180A-E3/5B pinout, P6SMB180A-E3/5B application, or P6SMB180A-E3/5B equivalent, this page delivers verified electrical parameters, polarity marking guidance, thermal derating behavior, AEC-Q101 qualification status, and real-world clamping performance under standardized surge conditions.
Technical Context
This TVS diode operates as a unidirectional clamping device with cathode-band polarity identification, leveraging glass-passivated junction technology for stable breakdown and low incremental surge resistance. Its 10/1000 μs waveform response enables robust protection against repetitive transients up to 0.01% duty cycle.
Designed for surface-mount assembly on 0.2" × 0.2" copper pads per terminal, it achieves 100 °C/W junction-to-ambient thermal resistance and supports operating junction temperatures from –65 °C to +150 °C. The device meets J-STD-020 MSL Level 1 and is RoHS-compliant with matte tin-plated leads.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM (Stand-off Voltage) | 154 V - Maximum continuous reverse voltage before clamping begins; defines safe operating margin below breakdown. |
| VBR (Breakdown Voltage) | 171–189 V at 1 mA - Confirmed avalanche initiation range; ensures predictable turn-on during overvoltage events. |
| VC (Clamping Voltage) | 246 V at IPPM = 2.4 A - Peak voltage seen by protected circuit during 10/1000 μs surge; determines stress on downstream components. |
| PPPM (Peak Pulse Power) | 600 W - Sustained transient energy absorption capability without failure; validated per Fig. 1 curve. |
| ID (Reverse Leakage) | 1.0 μA at VWM - Minimal DC leakage current at rated standoff, preserving low-power system integrity. |
| TJ max | +150 °C - Maximum allowable junction temperature; sets thermal design limits for PCB layout and power cycling. |
| RθJA | 100 °C/W - Junction-to-ambient thermal resistance on standard pad layout; used to calculate temperature rise under steady-state dissipation. |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, low-profile case with matte tin-plated leads. Cathode identified by black band on body end.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Current entry point during forward conduction | Connected to ground or lower-potential rail in unidirectional clamp configuration; must be routed with low-inductance path. |
| Cathode | Current exit point during reverse-biased clamping | Connected to protected line (e.g., 180 V supply rail); band-marked end ensures correct orientation during automated placement. |
Key Features
| Feature | Design Value |
|---|---|
| 600 W peak pulse power rating | Enables reliable suppression of high-energy transients (e.g., ISO 7637-2 Pulse 1/2a/5a) without degradation across 1000+ cycles. |
| Glass passivated chip junction | Provides stable VBR tolerance (±5%), low leakage (<1 μA), and long-term reliability under thermal cycling and humidity exposure. |
| MSL Level 1 moisture sensitivity | Allows unlimited floor life and reflow compatibility at 260 °C peak without baking, simplifying SMT manufacturing flow. |
| AEC-Q101 qualified variant available | HE3/HM3 suffix versions meet automotive-grade stress testing (HTOL, TCT, ESD), supporting use in ADAS and infotainment power domains. |
| Low incremental surge resistance | Minimizes voltage overshoot during fast-rising transients (e.g., <1 ns rise time), improving protection margin for sensitive gate drivers. |
Applications
| Industrial Motor Drive Power Supply | Telecom Base Station DC Feeds |
|---|---|
|
Use Scenario: Protection of 180 V DC bus against inductive kickback from IGBT gate drivers and relay coil de-energization. IC Role / Device Role / Timing Role: Unidirectional TVS clamping device placed directly across bus rails, activated within nanoseconds of overvoltage onset. Use Value: Limits transient excursions to ≤246 V, preventing damage to 200 V-rated electrolytic capacitors and isolated DC/DC controllers. |
Use Scenario: Surge suppression on -48 V telecom rectifier outputs exposed to lightning-induced surges on outdoor feeder lines. IC Role / Device Role / Timing Role: Standoff-clamp TVS connected between output and chassis ground, absorbing 600 W pulses without latch-up. Use Value: Maintains ≤1 μA leakage at nominal -48 V operation while clamping 10/1000 μs surges to 246 V, preserving upstream rectifier integrity. |
| Automotive Body Control Module (BCM) | Industrial Sensor Signal Conditioning |
|
Use Scenario: Input protection for 180 V auxiliary power inputs in BCMs handling HVAC actuators and lighting loads. IC Role / Device Role / Timing Role: Primary overvoltage clamp on high-side switched rail, coordinated with fuse and upstream filter. Use Value: Survives repeated load-dump transients per ISO 16750-2 while maintaining 154 V standoff margin for normal operation. |
Use Scenario: Protection of analog front-end inputs in 180 V-powered industrial pressure sensors subjected to ESD and cable discharge events. IC Role / Device Role / Timing Role: Low-capacitance unidirectional clamp on signal line referenced to local ground, minimizing signal distortion. Use Value: Delivers 246 V clamping at 2.4 A with <1 nF junction capacitance (per Fig. 4), preserving bandwidth in 10 kHz sensor signals. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ180A-E3/5B | Same SMB package, identical VWM (154 V), VC (246 V), and PPPM (600 W); differs in JEDEC registration and minor thermal resistance (RθJA = 95 °C/W vs. 100 °C/W). | Valid for identical PCB footprints and surge profiles; preferred where tighter thermal margin is required in high-density layouts. | Select SMBJ180A-E3/5B when board-level thermal simulation shows junction temperature exceeding 135 °C under worst-case ambient. |
| 1.5SMC180A | Higher package thermal mass (SMC/DO-214AB), same VWM/VC/PPPM specs; RθJA = 60 °C/W but requires larger 0.3" × 0.3" pad area. | Used where sustained surge repetition or elevated ambient (>85 °C) demands superior heat dissipation over compactness. | Choose 1.5SMC180A only if layout allows larger footprint and thermal relief; not drop-in compatible due to different pad dimensions. |
Compared with SMBJ180A-E3/5B, P6SMB180A-E3/5B offers identical clamping performance with slightly higher thermal resistance-acceptable in most commercial designs-but compared with 1.5SMC180A, it trades thermal headroom for space savings, making it optimal for size-constrained industrial modules.
Availability
P6SMB180A-E3/5B is available at Aetrix Electronics and suitable for industrial motor drives, telecom DC feeds, automotive body control modules, and sensor signal conditioning requiring stable component supply and consistent surge performance across production batches.
Supply support for P6SMB180A-E3/5B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, and protection devices with emphasis on reliability, precision, and manufacturability.
The P6SMB Series targets cost-sensitive, high-volume applications demanding robust transient immunity in compact surface-mount packages-designed specifically for industrial automation, telecom infrastructure, and automotive subsystems.
FAQ
What is the maximum clamping voltage of the P6SMB180A-E3/5B under standard test conditions?
The P6SMB180A-E3/5B has a maximum clamping voltage (VC) of 246 V when subjected to a 10/1000 μs waveform at 2.4 A peak pulse current (IPPM), as specified in the Electrical Characteristics table on page 2 of Vishay document 88370. This value defines the upper voltage limit imposed on protected circuits during surge events and is measured with the device mounted on 0.2" × 0.2" copper pads per terminal.
Is the P6SMB180A-E3/5B RoHS-compliant and lead-free?
Yes, the P6SMB180A-E3/5B is RoHS-compliant and lead-free. The "E3" suffix explicitly denotes Vishay's commercial-grade, RoHS-compliant construction with matte tin-plated leads that meet J-STD-002 and JESD 22-B102 solderability standards. It also satisfies JESD 201 Class 2 whisker resistance requirements.
Does the P6SMB180A-E3/5B have automotive qualification?
The base P6SMB180A-E3/5B is not AEC-Q101 qualified; however, Vishay offers the P6SMB180AHE3_B variant (with "HE3" and revision "B") which is fully AEC-Q101 qualified for automotive applications. The "_B" suffix indicates AEC-Q101 compliance per note (1) on page 3 of document 88370, covering HTOL, TCT, and ESD stress tests.
What is the reverse leakage current specification for the P6SMB180A-E3/5B at its rated standoff voltage?
The P6SMB180A-E3/5B exhibits a maximum reverse leakage current (ID) of 1.0 μA at its rated standoff voltage (VWM) of 154 V, measured at TA = 25 °C. This low leakage ensures minimal power loss in always-on 180 V systems and preserves accuracy in high-impedance sensing nodes protected by the device.
How does the thermal resistance of the P6SMB180A-E3/5B affect its power handling in real PCB layouts?
The P6SMB180A-E3/5B has a typical junction-to-ambient thermal resistance (RθJA) of 100 °C/W when mounted on minimum recommended 0.2" × 0.2" copper pads. In practice, this means a 5.0 W steady-state dissipation (PD) would raise junction temperature by ~500 °C above ambient-so the device relies on transient-only operation. Real-world layouts must avoid excessive copper isolation to prevent exceeding the +150 °C TJ max during repetitive surges.
P6SMB180A-E3/5B Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- P6SMB, TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 154V
- Voltage - Breakdown (Min):
- 171V
- Voltage - Clamping (Max) @ Ipp:
- 246V
- Current - Peak Pulse (10/1000µs):
- 2.4A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -65°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMBJ)
P6SMB180A-E3/5B FAQ
1.How can I place an order for P6SMB180A-E3/5B through Aetrix?
Please submit a Request for Quotation (RFQ) for P6SMB180A-E3/5B on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for P6SMB180A-E3/5B reliable?
The price and inventory of P6SMB180A-E3/5B are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for P6SMB180A-E3/5B is usually 5 days.
3.What payment methods are accepted for P6SMB180A-E3/5B?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for P6SMB180A-E3/5B transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for P6SMB180A-E3/5B?
P6SMB180A-E3/5B orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your P6SMB180A-E3/5B order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for P6SMB180A-E3/5B?
For technical support, including P6SMB180A-E3/5B datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your P6SMB180A-E3/5B requirements.
6.How does Aetrix verify that P6SMB180A-E3/5B is sourced from the original manufacturer or authorized distributors?
All P6SMB180A-E3/5B products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that P6SMB180A-E3/5B meets industry standards.
7.What is the process for return or replacement of P6SMB180A-E3/5B?
All P6SMB180A-E3/5B units undergo pre-shipment inspection (PSI). If there is an issue with P6SMB180A-E3/5B, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The P6SMB180A-E3/5B part is unused and in its original packaging.
Return procedure for P6SMB180A-E3/5B:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
P6SMB180A-E3/5B Tags
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ESD9B5.0ST5G
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DESD3V3E1BL-7B
Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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D12V0L1B2LP-7B
Diodes Incorporated
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Nexperia USA Inc.
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Toshiba Semiconductor and Storage
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Diodes Incorporated
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