Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Vishay General Semiconductor - Diodes Division P6SMB18AHE3/5B

Part No.:
P6SMB18AHE3/5B
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
TVS Diodes
Package:
DO-214AA, SMB
Datasheet:
AetrixP6SMB18AHE3/5B.pdf
Description:
TVS DIODE 15.3VWM 25.2VC DO214AA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:5,084

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

P6SMB18AHE3/5B from Vishay General Semiconductor is a unidirectional surface-mount Transient Voltage Suppressor (TVS) diode in SMB (DO-214AA) package, rated for 18 V breakdown voltage (VBR = 17.1–18.9 V at IT = 1.0 mA), 25.2 V maximum clamping voltage (VC) at 23.8 A peak pulse current, and 600 W peak pulse power (10/1000 μs waveform). It protects MOSFETs, ICs, and sensor signal lines against inductive switching transients and ESD in automotive and industrial power supplies.

For engineers reviewing the P6SMB18AHE3/5B datasheet, P6SMB18AHE3/5B pinout, P6SMB18AHE3/5B application, or P6SMB18AHE3/5B equivalent, this AEC-Q101 qualified, RoHS-compliant TVS offers verified clamping performance, low incremental surge resistance, and MSL Level 1 moisture sensitivity - critical for high-reliability board-level surge protection design and automotive-grade BOM validation.

Technical Context

The P6SMB18AHE3/5B operates as a unidirectional avalanche diode with cathode-band polarity marking, leveraging glass-passivated junction technology for stable reverse breakdown and fast response (<1 ns). Its thermal resistance (RθJA = 100 °C/W) and junction temperature range (–65 to +150 °C) support operation on standard PCB copper pads without heatsinking under repetitive surge conditions.

Designed for transient suppression per IEC 61000-4-5 (surge) and IEC 61000-4-2 (ESD), it delivers consistent clamping at VC = 25.2 V up to IPPM = 23.8 A, with <0.1 % duty cycle derating above 25 °C ambient. The device meets JESD201 Class 2 whisker resistance and UL 94 V-0 flammability requirements for molded compound.

Key Specifications

Parameter Value and Actual Design Meaning
VBR (min/max) 17.1 V / 18.9 V at 1.0 mA test current - defines precise avalanche onset for reliable overvoltage triggering
VWM 15.3 V - maximum continuous reverse operating voltage before leakage exceeds 1.0 μA
VC @ IPPM 25.2 V at 23.8 A - clamping voltage limiting downstream component stress during 10/1000 μs surge
PPPM 600 W - peak pulse power handling capability under standardized lightning-surge waveform
IFSM 100 A - non-repetitive forward surge rating (8.3 ms half-sine), supporting inrush current immunity
TJ max +150 °C - enables use in under-hood automotive environments and high-temperature industrial enclosures
Package SMB (DO-214AA) - industry-standard surface-mount outline with 5.59 mm × 4.06 mm footprint and 2.20 mm height

Pinout & Package

Package: SMB (DO-214AA), surface-mount, matte tin-plated leads, MSL Level 1 (260 °C reflow peak), UL 94 V-0 compliant molding compound. Cathode identified by band marking on body.

Pin/Terminal Circuit Role Design Meaning
Anode Forward conduction terminal Connected to system ground or lower-potential rail; conducts during forward surge events (e.g., reverse battery protection)
Cathode Avalanche clamping terminal Connected to protected line (e.g., 12 V rail or sensor input); initiates clamping when reverse voltage exceeds VWM

Key Features

Feature Design Value
AEC-Q101 qualification Validated for automotive applications including engine control units and ADAS power domains
600 W peak pulse power (10/1000 μs) Withstands IEC 61000-4-5 Level 3 surges (1 kV open-circuit, 0.5 kV direct) without degradation
Glass passivated junction Ensures stable VBR tolerance (±5 %) and low leakage (<1 μA at VWM) across temperature
Low clamping ratio (VC/VBR ≈ 1.42) Minimizes overvoltage overshoot during fast transients, protecting 20 V-rated MOSFETs and logic ICs
MSL Level 1 rating Enables standard SMT reflow without baking or special handling, reducing manufacturing cost

Applications

Automotive Power Rail Protection Industrial Sensor Signal Line Protection

Use Scenario: 12 V battery-fed ECUs exposed to load-dump transients (ISO 16750-2) and alternator ripple.

IC Role / Device Role / Timing Role: Unidirectional TVS placed between power rail and ground to clamp positive-going surges above 15.3 V.

Use Value: Limits rail voltage to ≤25.2 V during 35 V/100 ms load dump, preventing damage to 24 V-tolerant microcontrollers and CAN transceivers.

Use Scenario: Analog output lines from pressure/temperature sensors in factory automation PLCs.

IC Role / Device Role / Timing Role: Point-of-entry TVS on 4–20 mA or 0–10 V signal traces to suppress ESD and field-induced spikes.

Use Value: Clamps transients to 25.2 V within <1 ns, preserving ADC input integrity and avoiding false readings or latch-up.

Consumer Power Adapter Input Stage Telecom DC Power Feeds

Use Scenario: Secondary-side 12 V/24 V outputs of AC-DC adapters powering routers and set-top boxes.

IC Role / Device Role / Timing Role: Primary overvoltage clamp on regulated DC output, upstream of LDOs and PMICs.

Use Value: Absorbs 600 W surges from capacitor discharge or hot-plug events while maintaining VWM margin over nominal 12 V ±10 %.

Use Scenario: -48 V DC feeding telecom base station RF modules and backhaul interfaces.

IC Role / Device Role / Timing Role: Unidirectional TVS on negative rail to suppress positive transients induced by cable coupling or relay switching.

Use Value: Withstands repeated 10/1000 μs surges up to 23.8 A while holding VC ≤25.2 V, ensuring uninterrupted bias to GaN amplifiers.

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient voltage suppression applications.

Alternative Part Technical Difference Application Difference Selection Advice
SMAJ18A-E3/5B Same VBR range (17.1–18.9 V), but lower PPPM = 400 W and higher VC = 29.2 V at 13.7 A Limited to lower-energy transients; unsuitable for ISO 16750-2 load dump compliance Select only for cost-sensitive consumer applications where 600 W surge immunity is not required
1.5SMC18A Same VBR and PPPM, but larger SMC (DO-214AB) package (7.11 mm × 6.22 mm) and higher RθJA = 120 °C/W Requires larger PCB area and exhibits higher thermal rise under repetitive surges Choose only if legacy SMC footprint compatibility is mandatory and space constraints allow

Compared with SMAJ18A-E3/5B and 1.5SMC18A, the P6SMB18AHE3/5B delivers superior energy absorption per unit area (600 W in SMB), tighter clamping (25.2 V vs. 29.2 V), and automotive qualification - making it the optimal choice for space-constrained, high-reliability 12 V system protection.

Availability

P6SMB18AHE3/5B is available at Aetrix Electronics and suitable for automotive electronics, industrial sensor interfaces, and telecom DC power feeds requiring stable component supply, AEC-Q101 traceability, and RoHS/halogen-free compliance.

Supply support for P6SMB18AHE3/5B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, and protection devices with emphasis on reliability, efficiency, and application-specific optimization.

The P6SMB Series targets board-level transient suppression in automotive, industrial, and communications systems, delivering high-power surge handling in compact surface-mount packages with AEC-Q101 qualification and robust thermal performance.

FAQ

What is the breakdown voltage tolerance for P6SMB18AHE3/5B?

The P6SMB18AHE3/5B has a specified breakdown voltage range of 17.1 V to 18.9 V at 1.0 mA test current, corresponding to a ±5 % tolerance around the nominal 18 V rating. This tight tolerance ensures predictable clamping onset across production lots and temperature extremes, critical for protecting 20 V-rated components without premature conduction.

Is P6SMB18AHE3/5B suitable for automotive applications?

Yes, P6SMB18AHE3/5B is AEC-Q101 qualified (indicated by the "HE3" suffix and revision "B"), tested for temperature cycling, humidity, mechanical shock, and surge endurance per automotive standards. It is widely deployed in engine control modules, body electronics, and ADAS power domains where load-dump and jump-start transients must be suppressed reliably.

What is the maximum clamping voltage of P6SMB18AHE3/5B under surge conditions?

The P6SMB18AHE3/5B clamps to a maximum of 25.2 V when subjected to its rated peak pulse current of 23.8 A (10/1000 μs waveform). This value is guaranteed across the full operating temperature range and forms the basis for downstream component voltage margining - for example, ensuring safe operation of 24 V logic ICs and MOSFETs.

Does P6SMB18AHE3/5B require special PCB layout considerations?

Yes. For optimal thermal and electrical performance, P6SMB18AHE3/5B should be mounted on minimum 0.2" × 0.2" (5.0 mm × 5.0 mm) copper pads per terminal, as specified in the Vishay datasheet. Minimizing trace inductance between the TVS and protected node is essential to preserve sub-nanosecond response; keep leads short and avoid vias in the clamping path.

How does the "5B" suffix affect packaging and ordering of P6SMB18AHE3/5B?

The "5B" suffix denotes 13-inch diameter plastic tape-and-reel packaging with 3200 units per reel, optimized for high-volume SMT assembly. This differs from "52" (7-inch reel, 750 units) and supports automated pick-and-place throughput while maintaining full traceability and AEC-Q101 compliance throughout the P6SMB18AHE3/5B supply chain.

P6SMB18AHE3/5B Specifications

Product attributes
Attribute value
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package/Case:
DO-214AA, SMB
Series:
P6SMB, TransZorb®
Packaging:
Tape & Reel (TR)
Product Status:
Discontinued at Digi-Key
Type:
Zener
Unidirectional Channels:
1
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
15.3V
Voltage - Breakdown (Min):
17.1V
Voltage - Clamping (Max) @ Ipp:
25.2V
Current - Peak Pulse (10/1000µs):
23.8A
Power - Peak Pulse:
600W
Power Line Protection:
No
Applications:
-
Capacitance @ Frequency:
-
Operating Temperature:
-65°C ~ 150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
DO-214AA (SMBJ)

P6SMB18AHE3/5B FAQ

1.How can I place an order for P6SMB18AHE3/5B through Aetrix?

Please submit a Request for Quotation (RFQ) for P6SMB18AHE3/5B on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for P6SMB18AHE3/5B reliable?

The price and inventory of P6SMB18AHE3/5B are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for P6SMB18AHE3/5B is usually 5 days.

3.What payment methods are accepted for P6SMB18AHE3/5B?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for P6SMB18AHE3/5B transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for P6SMB18AHE3/5B?

P6SMB18AHE3/5B orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your P6SMB18AHE3/5B order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for P6SMB18AHE3/5B?

For technical support, including P6SMB18AHE3/5B datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your P6SMB18AHE3/5B requirements.

6.How does Aetrix verify that P6SMB18AHE3/5B is sourced from the original manufacturer or authorized distributors?

All P6SMB18AHE3/5B products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that P6SMB18AHE3/5B meets industry standards.

7.What is the process for return or replacement of P6SMB18AHE3/5B?

All P6SMB18AHE3/5B units undergo pre-shipment inspection (PSI). If there is an issue with P6SMB18AHE3/5B, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The P6SMB18AHE3/5B part is unused and in its original packaging.

Return procedure for P6SMB18AHE3/5B:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

P6SMB18AHE3/5B Tags

  • P6SMB18AHE3/5B
  • P6SMB18AHE3/5B PDF
  • P6SMB18AHE3/5B Datasheet
  • P6SMB18AHE3/5B Specifications
  • P6SMB18AHE3/5B Images
  • Vishay General Semiconductor - Diodes Division
  • Vishay General Semiconductor - Diodes Division P6SMB18AHE3/5B
  • Buy P6SMB18AHE3/5B
  • P6SMB18AHE3/5B Price
  • P6SMB18AHE3/5B Distributor
  • P6SMB18AHE3/5B Supplier
  • P6SMB18AHE3/5B Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER