My Inquiry
My Account
Vishay General Semiconductor - Diodes Division P6SMB200AHE3_A/H
- Part No.:
- P6SMB200AHE3_A/H
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
P6SMB200AHE3_A/H.pdf
- Description:
- TVS DIODE 171VWM 274VC DO214AA
- Quantity:
- Payment:
- Shipping:
Inventory:7,150
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
P6SMB200AHE3_A/H from Vishay General Semiconductor is a unidirectional surface-mount Transient Voltage Suppressor (TVS) diode in SMB (DO-214AA) package, rated for 200 V standoff voltage (VWM), 210 V minimum breakdown voltage (VBR), and 274 V maximum clamping voltage (VC) at 2.2 A peak pulse current (IPPM). It delivers 600 W peak pulse power with 10/1000 μs waveform and is AEC-Q101 qualified for automotive electronics protection.
For engineers reviewing the P6SMB200AHE3_A/H datasheet, P6SMB200AHE3_A/H pinout, P6SMB200AHE3_A/H application, or P6SMB200AHE3_A/H equivalent, this device is selected for robust overvoltage protection of DC power rails and signal lines in harsh environments where fast response (<1 ns), low clamping ratio, and high surge reliability are required.
Technical Context
This TVS operates as a unidirectional clamping device: reverse-biased during normal operation, it remains high-impedance until transient voltage exceeds VBR, then avalanches to clamp energy within specified VC. Its glass-passivated junction ensures stable leakage (<1 μA at 171 V) and repeatable breakdown behavior across temperature.
Designed for automated SMT assembly, it meets MSL Level 1 per J-STD-020 (peak reflow 260 °C), features matte tin-plated leads compliant with J-STD-002, and supports bidirectional variants via CA suffix - though P6SMB200AHE3_A/H itself is strictly unidirectional with cathode band marking.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 171 V - Maximum continuous reverse operating voltage before conduction begins; defines safe DC rail margin. |
| VBR (min) | 190 V - Minimum breakdown voltage at 1 mA test current; guarantees clamping activation above system nominal voltage. |
| VC @ IPPM | 274 V - Clamped voltage at 2.2 A peak pulse current; determines worst-case stress on downstream ICs. |
| PPPM | 600 W - Peak pulse power handling with 10/1000 μs waveform; enables protection against IEC 61000-4-5 Level 4 surges. |
| IPPM | 2.2 A - Peak pulse current corresponding to VC; used to size PCB trace width and verify thermal derating. |
| TJ max | +150 °C - Maximum junction temperature; supports under-hood automotive placement without thermal shutdown. |
| RθJA | 100 °C/W - Junction-to-ambient thermal resistance on standard 0.2" × 0.2" copper pads; informs heatsinking requirements. |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, low-profile case with molded UL 94 V-0 compound and cathode band marking for polarity identification.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry / transient return path | Connected to ground or low-impedance return plane; completes clamping loop during surge events. |
| Cathode | Reverse-biased terminal / protected line connection | Connected to the line being protected (e.g., 24 V rail); avalanche conduction occurs when voltage exceeds VBR. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Validated for automotive-grade reliability including temperature cycling, HTRB, and ESD testing - suitable for engine control units and ADAS sensors. |
| 600 W peak pulse power | Withstands repetitive 10/1000 μs transients at 0.01% duty cycle - sufficient for ISO 7637-2 Pulse 1, 2a, and 5a compliance. |
| Glass-passivated junction | Ensures stable VBR tolerance (±5%), low leakage (<1 μA), and long-term parameter stability under thermal stress. |
| MSL Level 1 rating | Enables single-reflow assembly without moisture sensitivity concerns - eliminates baking requirement in production. |
| Low clamping ratio (VC/VBR ≈ 1.44) | Minimizes overvoltage overshoot during clamping - critical for protecting 200 V-rated MOSFETs and gate drivers. |
Applications
| Automotive Power Rail Protection | Industrial DC Motor Drive Inputs |
|---|---|
|
Use Scenario: Protecting 24 V supply lines in engine control modules from load dump and inductive switching spikes. IC Role / Device Role / Timing Role: Unidirectional TVS placed between battery rail and input filter capacitor to clamp transients before they reach DC-DC converters. Use Value: Limits voltage to ≤274 V during 100 V/100 ms load dump events, preventing damage to 36 V-input buck regulators. |
Use Scenario: Safeguarding PLC digital I/O modules connected to 48 V motor control circuits exposed to back-EMF. IC Role / Device Role / Timing Role: Standoff-connected TVS on motor enable lines to absorb flyback energy from relay coils and solenoid drivers. Use Value: Responds in <1 ns to suppress >1 kV spikes, preserving logic-level interface integrity without adding propagation delay. |
| Telecom DC Feeder Protection | Renewable Energy Inverter DC Link |
|
Use Scenario: Shielding PoE-powered equipment front-ends from lightning-induced surges on 48 V DC feeder lines. IC Role / Device Role / Timing Role: Primary clamping device upstream of hot-swap controllers and Ethernet PHYs. Use Value: Handles 600 W pulses while maintaining <1 μA leakage at 48 V - avoids false triggering and standby power loss. |
Use Scenario: Protecting IGBT gate drivers in solar string inverters from voltage reversals during rapid MPPT transitions. IC Role / Device Role / Timing Role: Bidirectional-capable variant not applicable; this unidirectional part guards positive DC link against overvoltage only. Use Value: Withstands repeated 200 V transients up to 150 °C ambient - matches inverter thermal profile without derating. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ200A-E3/52 | Same VWM (171 V), identical SMB package, but lower PPPM (400 W) and higher VC (324 V). | Limited to lower-energy transients; unsuitable for ISO 7637-2 Pulse 5a or IEC 61000-4-5 combination wave. | Select P6SMB200AHE3_A/H when 600 W clamping headroom and tighter VC are required for mission-critical automotive systems. |
| 1.5SMC200A | Higher package thermal resistance (RθJA = 125 °C/W), same VWM/VC, but larger SMC (DO-214AB) footprint. | Requires PCB redesign due to 2.5 mm longer body and different pad layout; not drop-in compatible. | Choose P6SMB200AHE3_A/H for space-constrained layouts needing SMB footprint and superior thermal performance. |
Compared with SMAJ200A-E3/52 and 1.5SMC200A, P6SMB200AHE3_A/H provides 50% higher peak power handling, 18% lower clamping voltage, and AEC-Q101 qualification - making it the preferred choice for automotive and industrial designs demanding validated reliability and compact form factor.
Availability
P6SMB200AHE3_A/H is available at Aetrix Electronics and suitable for automotive ECUs, industrial motor drives, telecom power supplies, and renewable energy inverters requiring stable component supply with full traceability and long-term lifecycle support.
Supply support for P6SMB200AHE3_A/H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in high-reliability diodes, MOSFETs, and passive components for automotive, industrial, and computing markets.
The P6SMB Series targets high-energy transient suppression in space-constrained, high-reliability applications - engineered specifically for AEC-Q101 compliance, automated SMT compatibility, and consistent clamping performance across temperature and lifetime.
FAQ
What is the maximum clamping voltage of P6SMB200AHE3_A/H at its rated peak pulse current?
The maximum clamping voltage (VC) of P6SMB200AHE3_A/H is 274 V at 2.2 A peak pulse current (IPPM) with a 10/1000 μs waveform. This value is measured under standardized test conditions and defines the upper voltage limit imposed on protected circuitry during transient events. P6SMB200AHE3_A/H maintains this clamping performance across its full operating temperature range (-65 °C to +150 °C), ensuring predictable protection in automotive under-hood environments.
Is P6SMB200AHE3_A/H suitable for bidirectional transient suppression?
No, P6SMB200AHE3_A/H is a unidirectional TVS diode, indicated by the "A" suffix and cathode band marking. It conducts only in reverse bias and must be oriented with cathode toward the protected line. For bidirectional protection, Vishay offers the P6SMB200CA variant (with "CA" suffix), which has symmetrical breakdown in both directions and no polarity marking. P6SMB200AHE3_A/H cannot substitute for bidirectional applications without circuit redesign.
What does the "HE3_A/H" suffix in P6SMB200AHE3_A/H signify?
The "HE3" denotes RoHS-compliant construction with AEC-Q101 qualification; "A" indicates the revision level of the device specification; "H" specifies the packaging format - 7-inch plastic tape and reel with 750 units per reel. This full suffix confirms P6SMB200AHE3_A/H meets automotive reliability standards and is supplied in production-ready SMT packaging compatible with high-speed pick-and-place equipment.
How does the thermal resistance of P6SMB200AHE3_A/H affect its surge capability at elevated ambient temperatures?
P6SMB200AHE3_A/H has a typical RθJA of 100 °C/W on 0.2" × 0.2" copper pads. At 85 °C ambient, its usable peak pulse power drops to ~420 W (derated per Fig. 2 in datasheet 88370), reducing IPPM proportionally. Engineers must apply this derating when designing for high-temperature enclosures. The device's 150 °C TJmax allows continued operation where alternatives would thermally throttle, making P6SMB200AHE3_A/H especially valuable in engine bay or industrial drive applications.
Can P6SMB200AHE3_A/H replace older P6SMB200A parts in existing designs?
Yes, P6SMB200AHE3_A/H is a direct replacement for legacy P6SMB200A parts with identical electrical specifications, SMB package dimensions, and pinout. The "HE3" suffix adds AEC-Q101 qualification and RoHS compliance without altering performance parameters. No PCB layout or schematic changes are needed; however, users should verify that their assembly process accommodates the MSL Level 1 reflow profile (260 °C peak) specified for P6SMB200AHE3_A/H.
P6SMB200AHE3_A/H Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- P6SMB, TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 171V
- Voltage - Breakdown (Min):
- 190V
- Voltage - Clamping (Max) @ Ipp:
- 274V
- Current - Peak Pulse (10/1000µs):
- 2.2A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -65°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMB)
P6SMB200AHE3_A/H FAQ
1.How can I place an order for P6SMB200AHE3_A/H through Aetrix?
Please submit a Request for Quotation (RFQ) for P6SMB200AHE3_A/H on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for P6SMB200AHE3_A/H reliable?
The price and inventory of P6SMB200AHE3_A/H are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for P6SMB200AHE3_A/H is usually 5 days.
3.What payment methods are accepted for P6SMB200AHE3_A/H?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for P6SMB200AHE3_A/H transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for P6SMB200AHE3_A/H?
P6SMB200AHE3_A/H orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your P6SMB200AHE3_A/H order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for P6SMB200AHE3_A/H?
For technical support, including P6SMB200AHE3_A/H datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your P6SMB200AHE3_A/H requirements.
6.How does Aetrix verify that P6SMB200AHE3_A/H is sourced from the original manufacturer or authorized distributors?
All P6SMB200AHE3_A/H products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that P6SMB200AHE3_A/H meets industry standards.
7.What is the process for return or replacement of P6SMB200AHE3_A/H?
All P6SMB200AHE3_A/H units undergo pre-shipment inspection (PSI). If there is an issue with P6SMB200AHE3_A/H, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The P6SMB200AHE3_A/H part is unused and in its original packaging.
Return procedure for P6SMB200AHE3_A/H:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
P6SMB200AHE3_A/H Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
