Vishay General Semiconductor - Diodes Division P6SMB220A-E3/5B
- Part No.:
- P6SMB220A-E3/5B
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
P6SMB220A-E3/5B.pdf
- Description:
- TVS DIODE 185VWM 328VC DO214AA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
P6SMB220A-E3/5B from Vishay General Semiconductor is a unidirectional surface-mount Transient Voltage Suppressor (TVS) diode in SMB (DO-214AA) package, rated for 220 V standoff voltage (VWM), 231 V minimum breakdown voltage (VBR), and 328 V maximum clamping voltage (VC) at 1.8 A peak pulse current (IPPM), used to protect power rails and signal lines in industrial power supplies and automotive ECUs against ESD and lightning-induced transients.
For engineers reviewing the P6SMB220A-E3/5B datasheet, P6SMB220A-E3/5B pinout, P6SMB220A-E3/5B application, or P6SMB220A-E3/5B equivalent, key selection criteria include clamping voltage margin relative to protected IC's absolute maximum rating, thermal resistance (RθJA = 100 °C/W), unidirectional polarity marking, RoHS-compliant matte tin plating, and 600 W peak pulse power capability with 10/1000 μs waveform.
Technical Context
This TVS diode operates as a voltage-clamped shunt protector: under normal conditions it presents high impedance (>1 MΩ leakage at 185 V), then rapidly avalanches below 231 V to divert surge current away from downstream circuitry. Its glass-passivated junction ensures stable breakdown and low incremental surge resistance.
Designed for automated SMT placement on PCBs with 5.0 mm × 5.0 mm copper pads per terminal, it meets J-STD-020 MSL Level 1 (peak reflow ≤260 °C) and supports repetitive transient suppression at 0.01% duty cycle, with junction temperature limited to 150 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM (Stand-off Voltage) | 185 V - Maximum continuous reverse voltage before significant leakage; sets upper limit of protected line operating range. |
| VBR (Breakdown Voltage) | 209–231 V at 1 mA - Confirmed avalanche onset range; ensures reliable triggering above system nominal voltage. |
| VC (Clamping Voltage) | 328 V at IPPM = 1.8 A - Peak voltage seen by protected device during 10/1000 μs surge; determines required voltage headroom. |
| PPPM (Peak Pulse Power) | 600 W - Sustained energy absorption capability for standardized 10/1000 μs waveform; defines transient robustness. |
| ID (Reverse Leakage) | 1.0 μA at VWM - Negligible standby current; avoids loading sensitive reference or bias networks. |
| RθJA | 100 °C/W - Junction-to-ambient thermal resistance; requires adequate PCB copper area for sustained 5.0 W dissipation. |
| Polarity | Unidirectional - Cathode marked by band; blocks forward conduction, clamps only reverse overvoltage events. |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, low-profile plastic case meeting UL 94 V-0 flammability rating; terminals are matte tin plated, solderable per J-STD-002 and JESD 22-B102.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Low-side connection point | Connected to ground or lower-potential rail; completes clamping path during reverse transient. |
| Cathode | High-side connection point | Marked by band; connected to protected line; conducts avalanche current into anode when VLINE exceeds VBR. |
Key Features
| Feature | Design Value |
|---|---|
| 600 W peak pulse power (10/1000 μs) | Enables protection against IEC 61000-4-5 Level 4 surges (4 kV line-earth) without derating on standard PCB layouts. |
| Glass passivated junction | Ensures stable VBR over lifetime and temperature, with minimal drift (<0.108 %/°C) and high reliability in harsh environments. |
| MSL Level 1 compliance | Supports lead-free reflow up to 260 °C without preconditioning; eliminates moisture sensitivity handling overhead. |
| RoHS-compliant, matte tin plating | Guarantees solder joint integrity and long-term corrosion resistance in industrial and automotive applications. |
| AEC-Q101 qualification option (_B suffix) | Validated for automotive under-hood use; P6SMB220A-E3/5B itself is commercial grade but shares identical die and package design. |
Applications
| Industrial Power Supply Protection | Automotive Body Control Module (BCM) |
|---|---|
|
Use Scenario: Protects 24 V DC input stage of programmable logic controller (PLC) power supply against load dump and inductive switching transients. IC Role / Device Role / Timing Role: Shunt TVS diode placed between input rail and ground, clamping surges before they reach upstream rectifier and downstream DC/DC controller. Use Value: Limits transient voltage to ≤328 V, maintaining safe margin below 36 V-rated input capacitors and 40 V MOSFETs. |
Use Scenario: Safeguards LIN bus transceiver power pins in BCM against battery disconnection spikes and alternator load dump. IC Role / Device Role / Timing Role: Unidirectional clamp referenced to chassis ground, absorbing negative-going transients on VCC line while blocking forward conduction. Use Value: Withstands 600 W pulses without degradation, preserving signal integrity and preventing latch-up in LIN PHY ICs. |
| Telecom AC/DC Adapter Input Stage | Motor Drive Gate Driver Supply Rail |
|
Use Scenario: Shields primary-side controller IC in 48 V telecom adapter from surges induced by nearby relay switching or lightning coupling. IC Role / Device Role / Timing Role: Standoff-rated TVS on bulk capacitor input, triggered only during overvoltage events exceeding 185 V. Use Value: 1.0 μA leakage at 185 V avoids unnecessary quiescent current draw, critical for Energy Star compliance. |
Use Scenario: Clamps positive voltage spikes on isolated gate driver supply (e.g., 15 V rail) caused by Miller capacitance coupling during IGBT turn-off. IC Role / Device Role / Timing Role: Fast-response shunt element across gate driver VDD and GND, activated within nanoseconds of overvoltage detection. Use Value: 30.6 ns typical response time prevents gate oxide overstress in SiC MOSFET drivers operating at >100 kHz switching frequency. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ220A | Same VWM (185 V), VC = 328 V, but lower PPPM = 400 W; SMA package (DO-214AC), RθJA = 130 °C/W. | Lower power handling and higher thermal resistance limit use to lower-energy transients or better-cooled layouts. | Select when footprint constraints favor smaller SMA or when surge energy is consistently <400 W. |
| 1.5SMC220A | Same electrical specs (VWM = 185 V, VC = 328 V), but larger SMC (DO-214AB) package; RθJA = 75 °C/W, PPPM = 1500 W. | Higher thermal mass supports repeated surges and higher ambient temperatures; requires larger PCB area. | Choose for high-reliability industrial systems where 1500 W margin and lower junction temperature rise are critical. |
Compared with SMAJ220A, P6SMB220A-E3/5B delivers 50% higher surge power headroom and superior thermal performance; versus 1.5SMC220A, it trades 2.5× PCB area for tighter layout integration while retaining full 600 W capability.
Availability
P6SMB220A-E3/5B is available at Aetrix Electronics and suitable for industrial power supplies, automotive body control modules, telecom adapters, and motor drive gate driver circuits requiring stable component supply, RoHS compliance, and consistent surge immunity performance.
Supply support for P6SMB220A-E3/5B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, and protection devices with emphasis on reliability, precision, and automotive-grade qualification.
The P6SMB Series targets cost-sensitive yet robust transient suppression in space-constrained SMT designs, balancing high pulse power, low profile, and process compatibility for consumer, industrial, and automotive electronics.
FAQ
What is the clamping voltage of P6SMB220A-E3/5B at its rated peak pulse current?
The P6SMB220A-E3/5B has a maximum clamping voltage (VC) of 328 V at 1.8 A peak pulse current (IPPM), measured under the standardized 10/1000 μs waveform. This value defines the highest voltage imposed on protected circuitry during a surge event and must be verified against downstream components' absolute maximum ratings. The P6SMB220A-E3/5B maintains this clamping performance across its specified operating temperature range.
Is P6SMB220A-E3/5B suitable for automotive applications?
P6SMB220A-E3/5B is RoHS-compliant commercial-grade; however, the P6SMB220A-HE3_B variant (same die and SMB package, with _B suffix) is AEC-Q101 qualified for automotive under-hood use. Engineers selecting P6SMB220A-E3/5B for automotive should confirm system-level qualification requirements-while the P6SMB220A-E3/5B shares identical electrical and thermal characteristics, only the HE3_B version carries formal automotive stress test validation.
What does the "E3/5B" suffix indicate in P6SMB220A-E3/5B?
The "E3" denotes RoHS-compliant, commercial-grade construction with matte tin-plated leads; "5B" specifies packaging in 13-inch diameter plastic tape and reel containing 3200 units. This differs from "E3/52", which uses 7-inch reels of 750 units. The P6SMB220A-E3/5B is optimized for high-volume SMT assembly lines requiring extended reel length and reduced changeover frequency.
How does the thermal resistance of P6SMB220A-E3/5B affect PCB layout?
P6SMB220A-E3/5B has a typical junction-to-ambient thermal resistance (RθJA) of 100 °C/W, measured on 0.2" × 0.2" (5.0 mm × 5.0 mm) copper pads per terminal. To maintain TJ ≤ 150 °C at full 5.0 W steady-state dissipation, designers must allocate ≥25 mm² of 2-oz copper per pad and avoid thermal isolation. The P6SMB220A-E3/5B's SMB footprint enables compact routing while demanding deliberate copper area planning.
Can P6SMB220A-E3/5B be used in bidirectional configurations?
No-P6SMB220A-E3/5B is unidirectional, with cathode identified by a band. For bidirectional operation, select the P6SMB220CA variant (e.g., P6SMB220CA-E3/5B), which provides symmetrical clamping in both polarities. Using P6SMB220A-E3/5B in reverse-biased signal paths risks forward conduction and failure; its datasheet-specified parameters apply only for reverse-transient suppression.
P6SMB220A-E3/5B Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- P6SMB, TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 185V
- Voltage - Breakdown (Min):
- 209V
- Voltage - Clamping (Max) @ Ipp:
- 328V
- Current - Peak Pulse (10/1000µs):
- 1.8A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -65°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMB)
P6SMB220A-E3/5B FAQ
1.How can I place an order for P6SMB220A-E3/5B through Aetrix?
Please submit a Request for Quotation (RFQ) for P6SMB220A-E3/5B on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for P6SMB220A-E3/5B reliable?
The price and inventory of P6SMB220A-E3/5B are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for P6SMB220A-E3/5B is usually 5 days.
3.What payment methods are accepted for P6SMB220A-E3/5B?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for P6SMB220A-E3/5B transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for P6SMB220A-E3/5B?
P6SMB220A-E3/5B orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your P6SMB220A-E3/5B order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for P6SMB220A-E3/5B?
For technical support, including P6SMB220A-E3/5B datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your P6SMB220A-E3/5B requirements.
6.How does Aetrix verify that P6SMB220A-E3/5B is sourced from the original manufacturer or authorized distributors?
All P6SMB220A-E3/5B products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that P6SMB220A-E3/5B meets industry standards.
7.What is the process for return or replacement of P6SMB220A-E3/5B?
All P6SMB220A-E3/5B units undergo pre-shipment inspection (PSI). If there is an issue with P6SMB220A-E3/5B, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The P6SMB220A-E3/5B part is unused and in its original packaging.
Return procedure for P6SMB220A-E3/5B:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
P6SMB220A-E3/5B Tags

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onsemi

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DESD3V3E1BL-7B
Diodes Incorporated

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onsemi

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Diodes Incorporated

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D5V0P1B2LP-7B
Diodes Incorporated

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DESD5V0U1BA-7
Diodes Incorporated

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ESD5Z5.0T1G
onsemi

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DESD5V0U1BB-7
Diodes Incorporated

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D12V0L1B2LP-7B
Diodes Incorporated

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PESD2V0Y1BSFYL
Nexperia USA Inc.

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DF2S5M4CT,L3F
Toshiba Semiconductor and Storage

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D5V0L1B2WS-7
Diodes Incorporated
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