My Inquiry
My Account
Vishay General Semiconductor - Diodes Division P6SMB250AHM3_C/I
- Part No.:
- P6SMB250AHM3_C/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
P6SMB250AHM3_C/I.pdf
- Description:
- TVS DIODE 214VWM 344VC DO214AA
- Quantity:
- Payment:
- Shipping:
Inventory:5,576
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
P6SMB250AHM3_C/I from Vishay General Semiconductor is a unidirectional surface-mount Transient Voltage Suppressor (TVS) diode in SMB (DO-214AA) package, rated for 250 V standoff voltage (VWM), 263 V minimum breakdown voltage (VBR), and 344 A peak pulse current (IPPM) under 10/1000 μs waveform. It delivers 600 W peak pulse power protection for high-voltage DC bus lines in industrial motor drives and telecom power supplies.
For engineers reviewing the P6SMB250AHM3_C/I datasheet, P6SMB250AHM3_C/I pinout, P6SMB250AHM3_C/I application, or P6SMB250AHM3_C/I equivalent, key selection criteria include clamping voltage (344 V), unidirectional polarity with cathode band marking, AEC-Q101 qualification status (HM3 suffix), and compatibility with automated SMT assembly on 0.2" × 0.2" copper pads.
Technical Context
This TVS diode operates as a clamping device in parallel with sensitive circuitry, activating when transient voltage exceeds its 263 V minimum breakdown threshold to divert surge current away from downstream components. Its glass-passivated junction ensures stable leakage performance and fast response time (<1 ns).
Designed for high-energy transients, it sustains 600 W peak pulse power per 10/1000 μs waveform at 0.01% duty cycle and exhibits low incremental surge resistance-critical for limiting voltage overshoot during 344 A peak pulses. Thermal resistance is 100 °C/W junction-to-ambient (RθJA) on standard PCB pads.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM (Stand-off) | 250 V - Maximum continuous reverse operating voltage before clamping begins |
| VBR (Breakdown) | 237–263 V at 1 mA - Confirmed breakdown range ensuring reliable turn-on above system nominal voltage |
| VC (Clamping) | 344 V at 344 A - Peak voltage seen by protected circuit during full-rated surge event |
| IPPM | 344 A - Maximum non-repetitive surge current handled without degradation |
| PPPM | 600 W - Peak pulse power dissipation capability with 10/1000 μs waveform |
| TJ max. | 150 °C - Maximum junction temperature enabling operation in high-ambient industrial environments |
| Package | SMB (DO-214AA) - Low-profile SMT package compatible with J-STD-020 MSL Level 1 reflow profile (260 °C peak) |
Pinout & Package
SMB (DO-214AA) package with matte tin-plated leads; unidirectional polarity indicated by cathode band on one end. Mounting requires 0.2" × 0.2" (5.0 mm × 5.0 mm) copper pads per terminal per Vishay recommended layout.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Current entry point during forward conduction | Connected to lower-potential side of protected line; enables DC bias path in unidirectional configuration |
| Cathode | Current exit point during reverse clamping | Marked with band; connected to higher-potential rail (e.g., +250 V DC bus) to clamp positive transients |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | HM3 suffix confirms qualification for automotive-grade reliability (vibration, temperature cycling, HTRB) |
| 600 W peak pulse power | Handles high-energy surges common in industrial DC link and telecom rectifier outputs |
| Glass passivated junction | Ensures stable leakage current (<1 μA at 250 V) and long-term parameter stability over life |
| Low clamping ratio (VC/VBR ≈ 1.30) | Minimizes overvoltage stress on protected MOSFETs or controllers during surge events |
| MSL Level 1 moisture sensitivity | Enables standard SMT reflow without baking; supports high-yield automated assembly |
Applications
| Industrial Motor Drives | Telecom Power Rectifiers |
|---|---|
Use Scenario: Protection of IGBT gate drivers and DC-link capacitors against switching-induced voltage spikes in 200–300 V DC bus systems. IC Role / Device Role / Timing Role: Unidirectional TVS placed across DC bus to clamp positive transients exceeding 250 V. Use Value: Limits clamped voltage to 344 V, preventing overvoltage failure of 600 V-class IGBTs and electrolytic capacitors. |
Use Scenario: Surge suppression on output of bridge rectifiers feeding 48 V or 54 V telecom power systems with high inductive loads. IC Role / Device Role / Timing Role: Parallel-connected clamping device absorbing lightning-induced surges on rectified DC rails. Use Value: Withstands 344 A peak pulses while maintaining <1 μA leakage at 250 V, preserving system efficiency. |
| Railway Signaling Power | Renewable Energy Inverters |
Use Scenario: Input-side protection of 250 V-rated DC-DC converters powering signaling logic in railway control cabinets exposed to traction return currents. IC Role / Device Role / Timing Role: Standoff-rated TVS absorbing repetitive 10/1000 μs transients from nearby rail switching events. Use Value: AEC-Q101 qualification ensures robustness against thermal cycling and mechanical shock in rolling stock environments. |
Use Scenario: DC-link protection in string inverters where PV array open-circuit voltage reaches 250–300 V under cold conditions. IC Role / Device Role / Timing Role: Clamping device safeguarding MPPT controllers and isolation amplifiers from solar array surge coupling. Use Value: 150 °C max junction temperature rating supports operation in rooftop enclosures with ambient up to 85 °C. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ250A-E3/5B | Same VWM (250 V), lower PPPM (400 W), SMA package (smaller footprint, higher RθJA) | Limited to lower-energy transients; not AEC-Q101 qualified | Select when board space is constrained and surge energy remains below 400 W |
| 1.5SMC250AHE3_A/H | Same VWM and PPPM, but SMC (DO-214AB) package (larger, higher IPPM margin), AEC-Q101 qualified | Better thermal performance (RθJA = 60 °C/W) for high-duty-cycle environments | Choose when higher surge repetition rate or improved thermal derating is required |
Compared with SMAJ250A-E3/5B, P6SMB250AHM3_C/I offers 50% higher surge power handling and automotive qualification; versus 1.5SMC250AHE3_A/H, it provides identical protection specs in a smaller SMB footprint but with higher thermal resistance-favoring cost-sensitive, space-constrained designs with moderate surge repetition.
Availability
P6SMB250AHM3_C/I is available at Aetrix Electronics and suitable for industrial motor drives, telecom rectifier outputs, railway signaling power supplies, and renewable energy inverters requiring stable component supply with AEC-Q101 traceability and SMT-ready packaging.
Supply support for P6SMB250AHM3_C/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, MOSFETs, optoelectronics, and passive components with emphasis on reliability and high-power handling.
The P6SMB Series targets high-energy transient suppression in industrial, automotive, and telecom infrastructure, delivering standardized 600 W surge capability across a wide voltage range in compact SMB packages.
FAQ
What is the clamping voltage of the P6SMB250AHM3_C/I under full-rated surge current?
The P6SMB250AHM3_C/I has a maximum clamping voltage (VC) of 344 V at 344 A peak pulse current (IPPM) with a 10/1000 μs waveform. This value is measured per Figure 1 in Vishay Document 88370 and defines the upper voltage limit imposed on protected circuitry during worst-case transient events. The P6SMB250AHM3_C/I maintains this clamping performance across its specified operating temperature range.
Is the P6SMB250AHM3_C/I suitable for automotive applications?
Yes-the HM3 suffix in P6SMB250AHM3_C/I indicates halogen-free, RoHS-compliant construction and AEC-Q101 qualification per Vishay's ordering information (Document 88370, page 3, Note 2). This certification covers stress tests including HTGB, HTRB, and temperature cycling, making the P6SMB250AHM3_C/I appropriate for under-hood and chassis-mounted surge protection in automotive ECUs and power modules.
What does the "C/I" suffix mean in P6SMB250AHM3_C/I?
The "C/I" suffix in P6SMB250AHM3_C/I denotes tape-and-reel packaging: "C" indicates 7-inch diameter reel, and "I" specifies 3200 units per reel (per Vishay's Ordering Information table on page 3 of Document 88370). This format supports high-volume SMT placement and is distinct from "H" (750 units/reel) and "B" (13-inch reel) variants.
How does the P6SMB250AHM3_C/I compare to bidirectional TVS diodes in the same series?
The P6SMB250AHM3_C/I is unidirectional and features a cathode band for polarity identification; bidirectional variants (e.g., P6SMB250CA) lack marking and conduct in both directions. While both share 600 W PPPM, the unidirectional P6SMB250AHM3_C/I offers lower leakage (<1 μA at 250 V) and is preferred for DC-bus protection where polarity is fixed. Bidirectional types are used only in AC-coupled or floating signal-line applications.
What PCB pad layout is required for optimal thermal performance of the P6SMB250AHM3_C/I?
Vishay specifies a minimum 0.2" × 0.2" (5.0 mm × 5.0 mm) copper pad area for each terminal of the P6SMB250AHM3_C/I to achieve rated 600 W pulse power and 344 A IPPM. Deviating from this layout increases thermal resistance beyond the documented 100 °C/W RθJA, risking junction overheating during repeated surges. The P6SMB250AHM3_C/I datasheet (Fig. 6, page 4) confirms this requirement for safe operation.
P6SMB250AHM3_C/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- P6SMB, TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 214V
- Voltage - Breakdown (Min):
- 237V
- Voltage - Clamping (Max) @ Ipp:
- 344V
- Current - Peak Pulse (10/1000µs):
- 1.74A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -65°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMB)
P6SMB250AHM3_C/I FAQ
1.How can I place an order for P6SMB250AHM3_C/I through Aetrix?
Please submit a Request for Quotation (RFQ) for P6SMB250AHM3_C/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for P6SMB250AHM3_C/I reliable?
The price and inventory of P6SMB250AHM3_C/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for P6SMB250AHM3_C/I is usually 5 days.
3.What payment methods are accepted for P6SMB250AHM3_C/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for P6SMB250AHM3_C/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for P6SMB250AHM3_C/I?
P6SMB250AHM3_C/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your P6SMB250AHM3_C/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for P6SMB250AHM3_C/I?
For technical support, including P6SMB250AHM3_C/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your P6SMB250AHM3_C/I requirements.
6.How does Aetrix verify that P6SMB250AHM3_C/I is sourced from the original manufacturer or authorized distributors?
All P6SMB250AHM3_C/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that P6SMB250AHM3_C/I meets industry standards.
7.What is the process for return or replacement of P6SMB250AHM3_C/I?
All P6SMB250AHM3_C/I units undergo pre-shipment inspection (PSI). If there is an issue with P6SMB250AHM3_C/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The P6SMB250AHM3_C/I part is unused and in its original packaging.
Return procedure for P6SMB250AHM3_C/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
P6SMB250AHM3_C/I Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
