Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Vishay General Semiconductor - Diodes Division P6SMB33AHE3_B/H

Part No.:
P6SMB33AHE3_B/H
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
TVS Diodes
Package:
DO-214AA, SMB
Datasheet:
AetrixP6SMB33AHE3_B/H.pdf
Description:
600W,33V 5%,UNIDIR,SMB TVS
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:9,171

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

P6SMB33AHE3_B/H from Vishay General Semiconductor is a unidirectional surface-mount Transient Voltage Suppressor (TVS) diode in SMB (DO-214AA) package, designed for clamping voltage transients on power and signal lines. It features a 33 V breakdown voltage (VBR = 31.4–34.7 V at IT = 1.0 mA), 28.2 V stand-off voltage (VWM), 45.7 V maximum clamping voltage (VC) at 13.1 A peak pulse current, and 600 W peak pulse power rating with 10/1000 μs waveform - used to protect MOSFETs, ICs, and sensor interfaces in automotive and industrial power supplies.

For engineers reviewing the P6SMB33AHE3_B/H datasheet, P6SMB33AHE3_B/H pinout, P6SMB33AHE3_B/H application, or P6SMB33AHE3_B/H equivalent, key selection criteria include unidirectional polarity, AEC-Q101 qualification (indicated by HE3_B suffix), low incremental surge resistance, fast response time, and compatibility with automated SMT placement on 0.2" × 0.2" copper pads.

Technical Context

This TVS diode operates as a voltage-clamping protection device that enters avalanche conduction when reverse voltage exceeds its breakdown threshold. Its glass-passivated junction ensures stable VBR tolerance (±5%) and low leakage (<1.0 μA at VWM), while the SMB package supports high thermal dissipation (RθJA = 100 °C/W) and meets MSL Level 1 per J-STD-020.

The device is rated for repetitive 10/1000 μs surges at 0.01% duty cycle and handles non-repetitive 8.3 ms half-sine forward surge up to 100 A (IFSM). Junction temperature range spans –65 °C to +150 °C, and it complies with RoHS and halogen-free requirements per Vishay's HE3 material categorization.

Key Specifications

Parameter Value and Actual Design Meaning
VBR (min/max) 31.4 V / 34.7 V at IT = 1.0 mA - defines precise avalanche onset window for reliable overvoltage triggering
VWM 28.2 V - maximum continuous reverse operating voltage before leakage rises above 1.0 μA
VC @ IPPM 45.7 V at 13.1 A - clamped voltage during 600 W transient, limiting stress on downstream components
PPPM 600 W - peak pulse power handling with 10/1000 μs waveform, enabling robust ESD and lightning surge immunity
IFSM 100 A - single half-sine surge rating (8.3 ms), supporting high-energy inductive switching events
TJ max. +150 °C - extended junction temperature capability for under-hood automotive and high-ambient industrial use
AEC-Q101 Qualified - validated for automotive-grade reliability including temperature cycling, HTRB, and ESD testing

Pinout & Package

Package: SMB (DO-214AA), surface-mount, low-profile case with matte tin-plated leads solderable per J-STD-002 and JESD 22-B102. Cathode indicated by band marking; polarity is unidirectional.

Pin/Terminal Circuit Role Design Meaning
Anode Forward current entry / Reverse voltage reference node Connected to system ground or lower-potential rail; defines directionality of clamping action
Cathode Avalanche conduction terminal / Clamping output Connected to protected line (e.g., 24 V rail); conducts surge current to ground when VREV > VBR

Key Features

Feature Design Value
600 W peak pulse power (10/1000 μs) Enables protection against IEC 61000-4-5 Level 4 surges (4 kV line-to-ground) without derating in standard PCB layouts
Glass passivated junction Ensures long-term VBR stability and low parameter drift across temperature and lifetime
MSL Level 1 (260 °C peak) Supports lead-free reflow without moisture-induced cracking or delamination
AEC-Q101 qualified (HE3_B suffix) Validated for automotive powertrain and body electronics requiring zero-defect reliability and extended temperature operation
Low clamping ratio (VC/VBR ≈ 1.46) Minimizes overvoltage overshoot during transient events, reducing risk of latch-up or gate oxide damage in protected ICs

Applications

Automotive Power Supply Protection Industrial Sensor Interface Protection

Use Scenario: Protecting 24 V CAN bus power rails and microcontroller supply inputs from load-dump transients (ISO 7637-2 Pulse 5a) and alternator ripple.

IC Role / Device Role / Timing Role: Unidirectional TVS clamping device placed between battery input and DC-DC converter input stage.

Use Value: Limits transient voltage to ≤45.7 V during 13.1 A surges, preventing brownout or destruction of downstream PMICs and MCU regulators.

Use Scenario: Safeguarding analog front-end inputs of pressure/temperature sensors in factory automation PLC modules exposed to relay coil flyback.

IC Role / Device Role / Timing Role: Standoff protector on sensor signal lines (e.g., 0–10 V or 4–20 mA) referenced to local ground.

Use Value: Maintains <1.0 μA leakage at 28.2 V, preserving signal integrity while clamping 10/1000 μs spikes to safe levels for precision ADCs.

Consumer Power Adapter Output Protection Telecom DC Feeder Line Protection

Use Scenario: Secondary-side overvoltage suppression in USB-C PD adapters and AC/DC wall adapters subject to capacitor discharge transients.

IC Role / Device Role / Timing Role: Final-stage clamp on regulated 5/9/15/20 V outputs before connector interface.

Use Value: Responds in <1 ns to suppress fast-rising transients, with 45.7 V clamping ensuring compliance with UL 62368-1 secondary circuit limits.

Use Scenario: Protecting PoE-powered equipment (e.g., IP cameras, wireless APs) from induced surges on 48 V DC feeder lines.

IC Role / Device Role / Timing Role: Primary transient suppressor on DC input before PoE controller and DC-DC isolation stage.

Use Value: Handles 600 W pulses without degradation, meeting IEC 61000-4-5 Combination Wave (1.2/50 μs + 8/20 μs) requirements for Class B equipment.

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient voltage suppression applications.

Alternative Part Technical Difference Application Difference Selection Advice
SMAJ33A-E3/5T Same SMB package, 33 V VBR, but rated for 400 W PPPM; no AEC-Q101 qualification Lower surge capacity; suitable only for commercial-grade consumer or office equipment Select when cost sensitivity outweighs automotive or industrial surge margin requirements
1.5SMC33A Higher-power SMC package (1500 W), same VBR range, but larger footprint and higher RθJA (60 °C/W) Requires PCB area increase; better for high-repetition surge environments (e.g., motor drives) Choose when system-level surge testing exceeds 600 W or when thermal management allows larger package

Compared with SMAJ33A-E3/5T and 1.5SMC33A, the P6SMB33AHE3_B/H delivers optimal balance of AEC-Q101 reliability, compact SMB footprint, and verified 600 W surge handling - making it the preferred choice for space-constrained automotive and industrial designs where qualification and consistency are mandatory.

Availability

P6SMB33AHE3_B/H is available at Aetrix Electronics and suitable for automotive infotainment power rails, industrial PLC sensor inputs, and telecom PoE equipment requiring stable component supply with full traceability and long-term lifecycle support.

Supply support for P6SMB33AHE3_B/H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, and protection devices with emphasis on reliability, efficiency, and application-specific performance.

The P6SMB Series targets high-reliability transient suppression in automotive, industrial, and telecom systems - engineered for AEC-Q101 compliance, low clamping ratios, and robust surge endurance in surface-mount form factors.

FAQ

What is the breakdown voltage tolerance of P6SMB33AHE3_B/H?

The P6SMB33AHE3_B/H has a breakdown voltage VBR specified from 31.4 V to 34.7 V at test current IT = 1.0 mA, representing a ±5% tolerance around the nominal 33 V rating. This tight tolerance ensures consistent clamping behavior across production lots and enables predictable system-level overvoltage protection design without margin over-engineering.

Is P6SMB33AHE3_B/H suitable for automotive applications?

Yes, P6SMB33AHE3_B/H is AEC-Q101 qualified (denoted by the HE3_B suffix) and tested for automotive-grade reliability including temperature cycling, highly accelerated life testing (HALT), and ESD. It is explicitly intended for under-hood and body electronics such as engine control modules, ADAS camera power supplies, and gateway ECUs where sustained operation from –40 °C to +125 °C ambient is required.

What is the maximum clamping voltage of P6SMB33AHE3_B/H under surge conditions?

The maximum clamping voltage VC of P6SMB33AHE3_B/H is 45.7 V at peak pulse current IPPM = 13.1 A, measured with a 10/1000 μs waveform. This value defines the upper voltage limit imposed on protected circuitry during worst-case transient events and is critical for ensuring downstream components like 3.3 V or 5 V LDOs remain within absolute maximum ratings.

Does P6SMB33AHE3_B/H have a bidirectional variant?

No, P6SMB33AHE3_B/H is strictly unidirectional, as indicated by the "A" suffix and cathode band marking. For bidirectional operation, Vishay offers the P6SMB33CAHE3_B/H variant (with "CA" suffix), which provides symmetrical clamping in both polarities and is used in AC-coupled or floating signal line protection where polarity reversal may occur.

What is the thermal resistance of P6SMB33AHE3_B/H in standard mounting conditions?

The typical junction-to-ambient thermal resistance RθJA of P6SMB33AHE3_B/H is 100 °C/W when mounted on minimum recommended 0.2" × 0.2" (5.0 mm × 5.0 mm) copper pads per terminal. This value assumes no additional heatsinking and is used to calculate junction temperature rise under steady-state power dissipation (PD = 5.0 W) or transient thermal limits during surge events.

P6SMB33AHE3_B/H Specifications

Product attributes
Attribute value
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package/Case:
DO-214AA, SMB
Series:
P6SMB, TransZorb®
Packaging:
Bulk
Product Status:
Active
Type:
Zener
Unidirectional Channels:
1
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
28.2V
Voltage - Breakdown (Min):
31.4V
Voltage - Clamping (Max) @ Ipp:
45.7V
Current - Peak Pulse (10/1000µs):
13.1A
Power - Peak Pulse:
600W
Power Line Protection:
No
Applications:
Telecom
Capacitance @ Frequency:
-
Operating Temperature:
-65°C ~ 150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
DO-214AA (SMB)

P6SMB33AHE3_B/H FAQ

1.How can I place an order for P6SMB33AHE3_B/H through Aetrix?

Please submit a Request for Quotation (RFQ) for P6SMB33AHE3_B/H on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for P6SMB33AHE3_B/H reliable?

The price and inventory of P6SMB33AHE3_B/H are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for P6SMB33AHE3_B/H is usually 5 days.

3.What payment methods are accepted for P6SMB33AHE3_B/H?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for P6SMB33AHE3_B/H transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for P6SMB33AHE3_B/H?

P6SMB33AHE3_B/H orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your P6SMB33AHE3_B/H order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for P6SMB33AHE3_B/H?

For technical support, including P6SMB33AHE3_B/H datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your P6SMB33AHE3_B/H requirements.

6.How does Aetrix verify that P6SMB33AHE3_B/H is sourced from the original manufacturer or authorized distributors?

All P6SMB33AHE3_B/H products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that P6SMB33AHE3_B/H meets industry standards.

7.What is the process for return or replacement of P6SMB33AHE3_B/H?

All P6SMB33AHE3_B/H units undergo pre-shipment inspection (PSI). If there is an issue with P6SMB33AHE3_B/H, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The P6SMB33AHE3_B/H part is unused and in its original packaging.

Return procedure for P6SMB33AHE3_B/H:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

P6SMB33AHE3_B/H Tags

  • P6SMB33AHE3_B/H
  • P6SMB33AHE3_B/H PDF
  • P6SMB33AHE3_B/H Datasheet
  • P6SMB33AHE3_B/H Specifications
  • P6SMB33AHE3_B/H Images
  • Vishay General Semiconductor - Diodes Division
  • Vishay General Semiconductor - Diodes Division P6SMB33AHE3_B/H
  • Buy P6SMB33AHE3_B/H
  • P6SMB33AHE3_B/H Price
  • P6SMB33AHE3_B/H Distributor
  • P6SMB33AHE3_B/H Supplier
  • P6SMB33AHE3_B/H Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER