Vishay General Semiconductor - Diodes Division P6SMB33AHE3_B/I
- Part No.:
- P6SMB33AHE3_B/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
P6SMB33AHE3_B/I.pdf
- Description:
- 600W,33V 5%,UNIDIR,SMB TVS
- Quantity:
- Payment:

- Shipping:

Inventory:4,817
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Product details
Overview
P6SMB33AHE3_B/I from Vishay General Semiconductor is a unidirectional surface-mount Transient Voltage Suppressor (TVS) diode in SMB (DO-214AA) package, designed for clamping voltage transients on power and signal lines. It features a 33 V breakdown voltage (VBR = 31.4–34.7 V at IT = 1.0 mA), 28.2 V stand-off voltage (VWM), 45.7 V maximum clamping voltage (VC) at 13.1 A peak pulse current (IPPM), and 600 W peak pulse power capability with 10/1000 μs waveform - used to protect MOSFETs, ICs, and sensor interfaces in automotive and industrial systems.
For engineers reviewing the P6SMB33AHE3_B/I datasheet, P6SMB33AHE3_B/I pinout, P6SMB33AHE3_B/I application, or P6SMB33AHE3_B/I equivalent, key selection criteria include unidirectional polarity, AEC-Q101 qualification, 150 °C max junction temperature, low incremental surge resistance, and compatibility with automated SMT placement on standard PCB copper pads.
Technical Context
This TVS diode operates as a voltage-clamping protection device that enters avalanche conduction when reverse voltage exceeds its breakdown threshold. Its glass-passivated junction ensures stable leakage performance and fast response time (<1 ns), while the SMB package provides mechanical robustness and thermal dissipation via 0.2" × 0.2" copper pads per terminal.
The device is rated for 600 W peak pulse power under 10/1000 μs waveform at 0.01% duty cycle, with derating above 25 °C ambient per Fig. 2. It supports 100 A non-repetitive forward surge current (IFSM) and exhibits a +0.098 %/°C temperature coefficient of VBR, enabling predictable clamping behavior across operating temperature range (−65 to +150 °C).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VBR (min/max) | 31.4 V / 34.7 V at 1.0 mA test current - defines precise avalanche onset window for reliable overvoltage triggering |
| VWM | 28.2 V - maximum continuous reverse working voltage before leakage exceeds 1.0 μA |
| VC @ IPPM | 45.7 V at 13.1 A - clamped voltage during 600 W transient, limiting stress on downstream components |
| IPPM | 13.1 A - peak pulse current supported under 10/1000 μs waveform, critical for IEC 61000-4-5 compliance margin |
| PPPM | 600 W - peak pulse power rating enabling protection against high-energy transients like inductive switching spikes |
| TJ max | +150 °C - maximum junction temperature allowing operation in under-hood automotive or industrial environments |
| AEC-Q101 | Qualified - validated for automotive-grade reliability including temperature cycling, HTRB, and ESD testing |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, matte tin-plated leads, RoHS-compliant and halogen-free (HM3 variant), MSL Level 1 (260 °C reflow peak), 0.106 g unit weight. Cathode indicated by band marking.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry / reverse voltage reference | Connected to lower-potential side (e.g., ground or return path); determines unidirectional conduction direction |
| Cathode | Avalanche conduction terminal / clamping node | Banded end; connected to protected line (e.g., 24 V rail or signal trace) to clamp transients to safe levels |
Key Features
| Feature | Design Value |
|---|---|
| 600 W peak pulse power | Enables robust protection against high-energy transients such as ISO 7637-2 Pulse 5a/b or IEC 61000-4-5 surges |
| Glass passivated junction | Ensures stable reverse leakage (<1.0 μA at VWM) and long-term reliability under thermal cycling |
| AEC-Q101 qualification | Validates suitability for automotive powertrain, body electronics, and ADAS modules requiring zero-failure field performance |
| Low profile SMB package | Supports high-density PCB layouts and automated pick-and-place assembly without tombstoning risk |
| 10/1000 μs waveform rating | Matches industry-standard surge test profiles, simplifying system-level EMC validation |
Applications
| Automotive Power Rail Protection | Industrial Sensor Interface Protection |
|---|---|
|
Use Scenario: Protecting 24 V supply rails in engine control units (ECUs) and lighting modules from load dump and inductive switching transients. IC Role / Device Role / Timing Role: Unidirectional TVS clamping element placed between power input and ground, activated within nanoseconds upon overvoltage event. Use Value: Limits rail voltage to ≤45.7 V during 600 W surge, preventing damage to MCU power supplies and CAN transceivers. |
Use Scenario: Safeguarding analog output lines (e.g., 4–20 mA current loops) in pressure or temperature sensors exposed to ESD and cable discharge events. IC Role / Device Role / Timing Role: Standby protection device shunting transient energy away from precision op-amps and ADC front-ends. Use Value: Maintains signal integrity by clamping transients before they exceed ±45.7 V, preserving sensor accuracy and avoiding latch-up. |
| Telecom DC Power Input Protection | Consumer Device USB Port Protection |
|
Use Scenario: Shielding 48 V PoE-powered equipment inputs from lightning-induced surges and hot-swap transients. IC Role / Device Role / Timing Role: Primary overvoltage clamp on DC input stage, coordinated with upstream fuses and secondary filtering. Use Value: Absorbs up to 600 W surge energy while holding clamped voltage below 50 V, ensuring compliance with IEC 61000-4-5 Level 4. |
Use Scenario: Adding transient immunity to USB VBUS lines in portable speakers, smart home hubs, and battery-powered peripherals. IC Role / Device Role / Timing Role: Low-capacitance unidirectional suppressor placed between VBUS and GND, minimizing signal distortion. Use Value: Provides <1 ns response and <1.0 μA leakage at 5 V, enabling USB 2.0 signal integrity while surviving 8 kV contact ESD per IEC 61000-4-2. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ33A-E3/5B | Same SMB package, 33 V VBR, but only commercial-grade (not AEC-Q101 qualified); 46.1 V VC at 12.9 A | Lacks automotive qualification; suitable for industrial/commercial designs where AEC-Q101 is not mandated | Select when cost sensitivity outweighs automotive reliability requirements and full qualification is unnecessary |
| 1.5SMC33A | Higher-power SMC package (1500 W), same 33 V VBR, 49.9 V VC at 30.1 A; larger footprint and higher thermal mass | Used where higher surge energy absorption is required, e.g., main board-level protection vs. point-of-load | Choose when system-level surge tests exceed 600 W or when PCB layout allows larger SMC footprint |
Compared with SMAJ33A-E3/5B, P6SMB33AHE3_B/I offers guaranteed AEC-Q101 qualification and tighter VBR tolerance; versus 1.5SMC33A, it delivers identical clamping performance in a 30% smaller SMB footprint ideal for space-constrained automotive modules.
Availability
P6SMB33AHE3_B/I is available at Aetrix Electronics and suitable for automotive ECUs, industrial sensor nodes, telecom power supplies, and consumer USB power delivery systems requiring stable component supply with AEC-Q101 assurance and consistent surge performance.
Supply support for P6SMB33AHE3_B/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability, efficiency, and application-specific optimization.
The P6SMB Series targets high-reliability transient suppression in automotive, industrial, and telecom infrastructure, engineered for robust clamping, low leakage, and seamless integration into automated SMT production lines.
FAQ
What is the exact breakdown voltage range for P6SMB33AHE3_B/I?
The P6SMB33AHE3_B/I has a specified breakdown voltage (VBR) range of 31.4 V to 34.7 V at a test current of 1.0 mA, measured per ANSI/IEEE C62.35 standards. This tight tolerance ensures consistent clamping behavior across production lots and supports precise overvoltage design margins in safety-critical applications such as automotive power distribution.
Is P6SMB33AHE3_B/I suitable for automotive applications?
Yes, P6SMB33AHE3_B/I is AEC-Q101 qualified and explicitly designated for automotive use with the "HE3_B" suffix indicating RoHS-compliant, halogen-free, and AEC-Q101-qualified construction. It meets requirements for under-hood and cabin modules including engine control, body electronics, and ADAS sensor interfaces where reliability under thermal and electrical stress is mandatory.
What is the maximum clamping voltage of P6SMB33AHE3_B/I under surge conditions?
The P6SMB33AHE3_B/I clamps to a maximum of 45.7 V when subjected to its rated peak pulse current of 13.1 A (10/1000 μs waveform). This value is measured under standardized test conditions with 0.2" × 0.2" copper pads and defines the upper voltage limit imposed on protected circuitry during transient events.
Does P6SMB33AHE3_B/I have bidirectional capability?
No, P6SMB33AHE3_B/I is a unidirectional TVS diode, as indicated by the "A" suffix and absence of "CA" in the part number. Its cathode is marked with a band, and it conducts only in reverse bias during overvoltage events - unlike bidirectional variants (e.g., P6SMB33CA) which protect AC or differential lines without polarity dependence.
What packaging and reel configuration does P6SMB33AHE3_B/I ship in?
P6SMB33AHE3_B/I ships in 13-inch diameter plastic tape and reel format (suffix "I"), containing 3200 units per reel. The tape conforms to EIA-481 standards, and the device is mounted in SMB (DO-214AA) package with matte tin-plated leads compatible with J-STD-002 solderability requirements and JESD22-B102 whisker testing Class 2.
P6SMB33AHE3_B/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- P6SMB, TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 28.2V
- Voltage - Breakdown (Min):
- 31.4V
- Voltage - Clamping (Max) @ Ipp:
- 45.7V
- Current - Peak Pulse (10/1000µs):
- 13.1A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- Telecom
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -65°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMB)
P6SMB33AHE3_B/I FAQ
1.How can I place an order for P6SMB33AHE3_B/I through Aetrix?
Please submit a Request for Quotation (RFQ) for P6SMB33AHE3_B/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for P6SMB33AHE3_B/I reliable?
The price and inventory of P6SMB33AHE3_B/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for P6SMB33AHE3_B/I is usually 5 days.
3.What payment methods are accepted for P6SMB33AHE3_B/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for P6SMB33AHE3_B/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for P6SMB33AHE3_B/I?
P6SMB33AHE3_B/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your P6SMB33AHE3_B/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for P6SMB33AHE3_B/I?
For technical support, including P6SMB33AHE3_B/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your P6SMB33AHE3_B/I requirements.
6.How does Aetrix verify that P6SMB33AHE3_B/I is sourced from the original manufacturer or authorized distributors?
All P6SMB33AHE3_B/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that P6SMB33AHE3_B/I meets industry standards.
7.What is the process for return or replacement of P6SMB33AHE3_B/I?
All P6SMB33AHE3_B/I units undergo pre-shipment inspection (PSI). If there is an issue with P6SMB33AHE3_B/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The P6SMB33AHE3_B/I part is unused and in its original packaging.
Return procedure for P6SMB33AHE3_B/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
P6SMB33AHE3_B/I Tags

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Nexperia USA Inc.

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Toshiba Semiconductor and Storage

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Diodes Incorporated
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