Vishay General Semiconductor - Diodes Division P6SMB36AHE3_A/I
- Part No.:
- P6SMB36AHE3_A/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
P6SMB36AHE3_A/I.pdf
- Description:
- TVS DIODE 30.8VWM 49.9VC DO214AA
- Quantity:
- Payment:

- Shipping:

Inventory:7,121
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
P6SMB36AHE3_A/I from Vishay General Semiconductor is a unidirectional surface-mount Transient Voltage Suppressor (TVS) diode in the P6SMB series, designed for clamping voltage transients on power and signal lines. It features a 36 V breakdown voltage (VBR = 34.2–37.8 V at IT = 1.0 mA), 30.8 V stand-off voltage (VWM), 49.9 V maximum clamping voltage (VC) at 12.0 A peak pulse current, and 600 W peak pulse power rating with 10/1000 μs waveform - deployed in automotive sensor protection and industrial power supply input stages.
For engineers reviewing the P6SMB36AHE3_A/I datasheet, P6SMB36AHE3_A/I pinout, P6SMB36AHE3_A/I application, or P6SMB36AHE3_A/I equivalent, this part is selected for robust ESD and surge immunity in AEC-Q101-qualified automotive electronics, where low clamping voltage, fast response time, and SMB package compatibility with automated SMT assembly are critical design requirements.
Technical Context
The P6SMB36AHE3_A/I operates as a unidirectional avalanche diode, leveraging glass-passivated junction technology to achieve sub-nanosecond response to transient overvoltage events. Its clamping behavior is defined by a 49.9 V VC at 12.0 A IPPM under 10/1000 μs waveform, with <0.1 % duty cycle repetition, and exhibits 1.0 μA max reverse leakage at VWM = 30.8 V.
Thermally, it supports operation from –65 °C to +150 °C junction temperature, with RθJA = 100 °C/W and RθJL = 20 °C/W, and is qualified to AEC-Q101 - confirmed by HE3 suffix and "_A/I" tape-and-reel packaging per JESD22-B102 solderability standards.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Breakdown Voltage VBR | 34.2–37.8 V at 1.0 mA test current - defines precise avalanche initiation threshold for reliable overvoltage triggering |
| Stand-off Voltage VWM | 30.8 V - maximum continuous reverse operating voltage before leakage exceeds 1.0 μA |
| Clamping Voltage VC | 49.9 V at 12.0 A peak pulse current - limits downstream circuit voltage during 600 W transient events |
| Peak Pulse Power PPPM | 600 W with 10/1000 μs waveform - sustains high-energy surges without failure under standardized lightning/surge test conditions |
| Junction Temperature Range | –65 °C to +150 °C - enables deployment in under-hood automotive and industrial environments with wide thermal cycling |
| AEC-Q101 Qualification | Qualified - validated for automotive reliability including HTOL, TC, UHAST, and mechanical stress per AEC standard |
| Package | SMB (DO-214AA) - 0.220" × 0.130" footprint compatible with IPC-7351B land pattern and reflow profiles up to 260 °C peak |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, cathode-banded unidirectional configuration. Matte tin-plated leads meet J-STD-002 solderability and JESD22-B102 whisker resistance (Class 2).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Low-side reference terminal | Connected to ground or lower-potential rail; completes conduction path during reverse transient clamp |
| Cathode | High-side transient input terminal | Connected to protected line (e.g., 36 V supply rail); band-marked end accepts positive surge relative to anode |
Key Features
| Feature | Design Value |
|---|---|
| 600 W peak pulse power (10/1000 μs) | Enables single-device protection against IEC 61000-4-5 Level 4 (4 kV) surges on 24–48 V systems without derating |
| AEC-Q101 qualification (HE3 suffix) | Validates suitability for automotive powertrain, body control, and ADAS modules requiring zero-failure field reliability |
| Low clamping ratio (VC/VBR ≈ 1.32) | Minimizes overvoltage stress on downstream MOSFETs or ICs compared to higher-ratio TVS devices |
| MSL Level 1 (260 °C peak) | Supports lead-free reflow without moisture-induced popcorn cracking - no bake required prior to assembly |
| Glass-passivated junction | Ensures stable VBR tolerance and low leakage (<1 μA) across temperature and lifetime, critical for battery-powered sensors |
Applications
| Automotive Body Control Module (BCM) | Industrial 24 V DC Power Input |
|---|---|
Use Scenario: Protecting LIN bus transceivers and window motor drivers from load-dump and inductive switching transients in vehicle door modules. IC Role / Device Role / Timing Role: Unidirectional TVS placed between 12 V supply rail and ground, clamping spikes up to 120 V within nanoseconds. Use Value: Prevents latch-up or permanent damage to 36 V-rated CAN/LIN interface ICs during ISO 7637-2 Pulse 5a events. |
Use Scenario: Safeguarding PLC I/O power inputs exposed to relay coil flyback and field wiring surges in factory automation cabinets. IC Role / Device Role / Timing Role: Primary surge suppression device on 24 V DC input stage, upstream of DC/DC converter and EMI filter. Use Value: Limits transient voltage to ≤49.9 V, ensuring downstream regulators operate within absolute maximum ratings during 600 W surges. |
| Automotive Camera Power Supply | Telecom Remote Radio Unit (RRU) |
Use Scenario: Shielding 36 V camera module power rails from alternator ripple and jump-start transients in ADAS front-facing cameras. IC Role / Device Role / Timing Role: Stand-off voltage matched to nominal 36 V system; clamps >40 V excursions before reaching image sensor or ISP. Use Value: Maintains clean power delivery during cold-crank and load-dump events, avoiding video corruption or reset faults. |
Use Scenario: Protecting 48 V bias supply lines feeding GaN power amplifiers in outdoor 5G base station RRUs subject to lightning-induced surges. IC Role / Device Role / Timing Role: Secondary-level TVS on DC feed line, coordinated with upstream MOVs to handle fast-rising edge transients. Use Value: Provides low-VC clamping (49.9 V) to prevent gate oxide breakdown in 65 V-rated GaN FETs during 10/1000 μs surges. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ36A-E3/5B | Same VWM (30.8 V), identical SMB package, but rated for 400 W PPPM (vs. 600 W) and not AEC-Q101 qualified | Limited to commercial-grade industrial or consumer use; unsuitable for automotive under-hood deployment | Select when cost sensitivity outweighs automotive qualification and 600 W surge margin |
| 1.5SMC36A | Same electrical specs (VBR, VC, PPPM), but larger SMC (DO-214AB) package (0.285" × 0.175") and no AEC-Q101 certification | Requires PCB layout change; used where higher thermal mass is needed but space allows larger footprint | Choose only if existing SMC land pattern exists and AEC-Q101 is not required |
Compared with SMAJ36A-E3/5B and 1.5SMC36A, P6SMB36AHE3_A/I delivers certified automotive reliability, higher surge margin (600 W), and drop-in SMB compatibility - making it the preferred choice for new AEC-Q101-compliant designs where board space and thermal performance are constrained.
Availability
P6SMB36AHE3_A/I is available at Aetrix Electronics and suitable for automotive body electronics, industrial 24 V power supplies, telecom remote radio units, and ADAS camera modules requiring stable component supply with full traceability and long-term lifecycle support.
Supply support for P6SMB36AHE3_A/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, TVS, MOSFETs, and optoelectronics with emphasis on reliability, efficiency, and application-specific optimization.
The P6SMB Series is engineered for high-energy transient suppression in automotive, industrial, and telecom infrastructure - delivering AEC-Q101-qualified, surface-mount TVS diodes with consistent clamping performance and MSL Level 1 process compatibility.
FAQ
What is the clamping voltage of P6SMB36AHE3_A/I at its rated peak pulse current?
The P6SMB36AHE3_A/I has a maximum clamping voltage (VC) of 49.9 V at 12.0 A peak pulse current (IPPM) under the standard 10/1000 μs waveform. This value is measured per JEDEC test conditions and ensures predictable overvoltage limiting for downstream components in circuits protected by the P6SMB36AHE3_A/I.
Is P6SMB36AHE3_A/I qualified for automotive applications?
Yes, P6SMB36AHE3_A/I is AEC-Q101 qualified, as confirmed by the "HE3" suffix and documentation in Vishay's P6SMB datasheet (Rev. 09-Jan-2024, Doc. #88370). This qualification covers stress tests including high-temperature operating life, temperature cycling, and unbiased highly accelerated stress testing - validating its use in automotive body control, ADAS, and powertrain systems.
What does the "_A/I" suffix mean in P6SMB36AHE3_A/I?
The "_A/I" suffix in P6SMB36AHE3_A/I indicates packaging: "A" denotes the revision code per Vishay's internal documentation, and "I" specifies 13-inch diameter plastic tape-and-reel delivery containing 3200 units. This format complies with EIA-481-D standards and supports high-speed pick-and-place assembly.
How does P6SMB36AHE3_A/I differ from non-HE3 variants like P6SMB36AE3?
P6SMB36AHE3_A/I includes AEC-Q101 qualification and enhanced process controls for automotive reliability, whereas P6SMB36AE3 is commercial-grade only. Both share identical electrical specs and SMB package, but only P6SMB36AHE3_A/I is approved for automotive under-hood use - a distinction critical for functional safety compliance in OEM designs using the P6SMB36AHE3_A/I.
What is the thermal resistance of P6SMB36AHE3_A/I, and how does it affect PCB layout?
P6SMB36AHE3_A/I has a typical junction-to-ambient thermal resistance (RθJA) of 100 °C/W and junction-to-lead (RθJL) of 20 °C/W. To maintain safe operation under repetitive surges, PCB layout must use minimum 0.2" × 0.2" (5.0 mm × 5.0 mm) copper pads per terminal - as specified in the datasheet - to achieve stated thermal performance and avoid exceeding the 150 °C max junction temperature.
P6SMB36AHE3_A/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- P6SMB, TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 30.8V
- Voltage - Breakdown (Min):
- 34.2V
- Voltage - Clamping (Max) @ Ipp:
- 49.9V
- Current - Peak Pulse (10/1000µs):
- 12A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -65°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMB)
P6SMB36AHE3_A/I FAQ
1.How can I place an order for P6SMB36AHE3_A/I through Aetrix?
Please submit a Request for Quotation (RFQ) for P6SMB36AHE3_A/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for P6SMB36AHE3_A/I reliable?
The price and inventory of P6SMB36AHE3_A/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for P6SMB36AHE3_A/I is usually 5 days.
3.What payment methods are accepted for P6SMB36AHE3_A/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for P6SMB36AHE3_A/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for P6SMB36AHE3_A/I?
P6SMB36AHE3_A/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your P6SMB36AHE3_A/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for P6SMB36AHE3_A/I?
For technical support, including P6SMB36AHE3_A/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your P6SMB36AHE3_A/I requirements.
6.How does Aetrix verify that P6SMB36AHE3_A/I is sourced from the original manufacturer or authorized distributors?
All P6SMB36AHE3_A/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that P6SMB36AHE3_A/I meets industry standards.
7.What is the process for return or replacement of P6SMB36AHE3_A/I?
All P6SMB36AHE3_A/I units undergo pre-shipment inspection (PSI). If there is an issue with P6SMB36AHE3_A/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The P6SMB36AHE3_A/I part is unused and in its original packaging.
Return procedure for P6SMB36AHE3_A/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
P6SMB36AHE3_A/I Tags

-
ESD9B5.0ST5G
onsemi

-
DESD3V3E1BL-7B
Diodes Incorporated

-
ESD5Z3.3T1G
onsemi

-
D5V0H1B2LP-7B
Diodes Incorporated

-
D5V0P1B2LP-7B
Diodes Incorporated

-
DESD5V0U1BA-7
Diodes Incorporated

-
ESD5Z5.0T1G
onsemi

-
DESD5V0U1BB-7
Diodes Incorporated

-
D12V0L1B2LP-7B
Diodes Incorporated

-
PESD2V0Y1BSFYL
Nexperia USA Inc.

-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage

-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

