My Inquiry
My Account
Vishay General Semiconductor - Diodes Division P6SMB43AHE3_B/H
- Part No.:
- P6SMB43AHE3_B/H
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
P6SMB43AHE3_B/H.pdf
- Description:
- 600W,43V 5%,UNIDIR,SMB TVS
- Quantity:
- Payment:
- Shipping:
Inventory:2,239
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
P6SMB43AHE3_B/H from Vishay General Semiconductor is a unidirectional surface-mount Transient Voltage Suppressor (TVS) diode in SMB (DO-214AA) package, featuring 43 V breakdown voltage (VBR = 40.9–45.2 V at IT = 1.0 mA), 36.8 V stand-off voltage (VWM), and 59.3 V maximum clamping voltage (VC) at 10.1 A peak pulse current (IPPM). It delivers 600 W peak pulse power (10/1000 μs waveform) and is AEC-Q101 qualified for automotive applications including power line and sensor signal protection.
For engineers reviewing the P6SMB43AHE3_B/H datasheet, P6SMB43AHE3_B/H pinout, P6SMB43AHE3_B/H application, or P6SMB43AHE3_B/H equivalent, this device is selected for robust transient suppression in 12 V–48 V DC systems where low clamping ratio, fast response (<1 ns), and high surge reliability under repetitive transients are required.
Technical Context
This unidirectional TVS operates as a voltage-clamped shunt protector: when reverse voltage exceeds VWM (36.8 V), it avalanches near VBR (40.9–45.2 V) and clamps to ≤59.3 V at 10.1 A, limiting energy dissipation in downstream circuitry. Its glass-passivated junction ensures stable leakage (<1.0 μA at VWM) and long-term reliability across -65 °C to +150 °C junction temperature range.
Designed for automated SMT assembly on standard PCB pads (0.2" × 0.2" copper), the device meets J-STD-020 MSL Level 1 (peak reflow 260 °C) and supports repetitive 0.01% duty-cycle surges. Its low incremental surge resistance and fast response time enable effective suppression of ESD, inductive switching spikes, and lightning-induced transients on power rails and signal lines.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VBR (min/max) | 40.9 V / 45.2 V at 1.0 mA test current - defines precise avalanche onset window for predictable clamping behavior |
| VWM | 36.8 V - maximum continuous reverse operating voltage before significant leakage begins |
| VC @ IPPM | 59.3 V at 10.1 A (10/1000 μs) - actual clamped voltage seen by protected IC/MOSFET during surge |
| PPPM | 600 W - peak transient power handling capability under standardized surge waveform |
| IPPM | 10.1 A - maximum non-repetitive surge current the device safely conducts without failure |
| Junction Temp Range | -65 °C to +150 °C - enables operation in under-hood automotive, industrial control, and outdoor electronics |
| Leakage @ VWM | ≤1.0 μA - negligible standby current draw, critical for battery-powered and low-power sensor nodes |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, low-profile plastic case with matte tin-plated leads solderable per J-STD-002 and JESD 22-B102. Cathode indicated by band marking.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward conduction terminal (reverse-biased during protection) | Connected to system ground or lower-potential rail; forms cathode-to-anode path during avalanche |
| Cathode | Protected line connection point | Connected to line being protected (e.g., 12 V supply or CAN H); band-marked end determines polarity |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Validated for automotive-grade reliability including temperature cycling, humidity bias, and surge endurance |
| 600 W peak pulse power (10/1000 μs) | Handles high-energy transients from load dump or inductive kick without degradation |
| Clamping ratio (VC/VBR) ≈ 1.32 | Low overvoltage margin ensures minimal stress on downstream 3.3 V/5 V/12 V ICs during clamping |
| MSL Level 1 moisture sensitivity | Zero bake requirement before reflow; compatible with standard SMT assembly lines |
| Glass-passivated junction | Stable electrical parameters over lifetime and environmental stress, with <1.0 μA leakage at VWM |
Applications
| Automotive Power Rail Protection | Industrial Sensor Signal Line Protection |
|---|---|
|
Use Scenario: Suppressing load-dump transients (up to 60 V, 400 ms) on 12 V vehicle battery-fed ECUs and body control modules. IC Role / Device Role / Timing Role: Unidirectional shunt TVS placed between power rail and chassis ground to clamp overvoltage before reaching LDOs and microcontrollers. Use Value: Prevents latch-up or permanent damage to 3.3 V/5 V logic supplies during ISO 7637-2 Pulse 5a events, enabled by 59.3 V clamping and 600 W surge rating. |
Use Scenario: Protecting analog output lines (e.g., 4–20 mA current loop or 0–10 V sensor outputs) from ESD and cable discharge events in factory automation. IC Role / Device Role / Timing Role: Low-capacitance TVS connected between signal line and ground to divert sub-100 ns ESD pulses without distorting slow analog signals. Use Value: Maintains signal integrity with <1.0 μA leakage at 36.8 V and fast <1 ns response, avoiding offset drift or measurement error in precision sensor interfaces. |
| Telecom DC Power Input Protection | Consumer Device USB Power Port Protection |
|
Use Scenario: Safeguarding 48 V PoE-powered equipment inputs against lightning-induced surges and AC-line coupling transients. IC Role / Device Role / Timing Role: Primary-level TVS on DC input stage, upstream of DC-DC converters, rated for repeated 10/1000 μs surges. Use Value: Withstands 10.1 A peak pulse current and 600 W surge energy while maintaining ≤59.3 V clamping, ensuring converter IC survival per IEC 61000-4-5 Level 3. |
Use Scenario: Adding secondary-level surge immunity to USB Type-A/C VBUS lines in portable speakers, monitors, and docking stations. IC Role / Device Role / Timing Role: Unidirectional TVS placed between VBUS and GND to absorb contact ESD (±15 kV air, ±8 kV contact) per IEC 61000-4-2. Use Value: Achieves <1.0 μA leakage at 36.8 V and rapid avalanche turn-on, preventing false resets or port disablement during user-handling ESD events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ43A-E3/5B | Same VBR (40.9–45.2 V), but SMA package (DO-214AC); 400 W PPPM, higher RθJA (140 °C/W) | Limited to lower-energy transients; less suitable for automotive load dump or telecom surges | Select when board space allows larger SMA footprint and surge requirements are ≤400 W |
| 1.5SMC43A | Same VBR and PPPM (600 W), but SMC (DO-214AB) package; higher thermal mass, RθJL = 15 °C/W | Better sustained power handling but larger footprint; not AEC-Q101 qualified | Prefer for industrial power supplies needing higher thermal robustness without automotive certification |
Compared with SMAJ43A-E3/5B and 1.5SMC43A, P6SMB43AHE3_B/H offers optimal balance of compact SMB size, AEC-Q101 qualification, and full 600 W surge capability-making it the preferred choice for space-constrained automotive and high-reliability industrial designs requiring certified transient immunity.
Availability
P6SMB43AHE3_B/H is available at Aetrix Electronics and suitable for automotive electronic control units, industrial sensor interfaces, telecom power inputs, and consumer USB power protection requiring stable component supply and long-term lifecycle support.
Supply support for P6SMB43AHE3_B/H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability, efficiency, and application-specific performance.
The P6SMB Series is engineered for high-energy transient suppression in harsh environments, targeting automotive, industrial, and telecom applications where AEC-Q101 compliance, low clamping voltage, and repeatable surge endurance are mandatory.
FAQ
What is the maximum clamping voltage of the P6SMB43AHE3_B/H under a 10/1000 μs surge?
The P6SMB43AHE3_B/H has a maximum clamping voltage (VC) of 59.3 V when subjected to its rated peak pulse current of 10.1 A under the standardized 10/1000 μs waveform. This value is measured per JEDEC standards and guarantees that downstream components experience no more than 59.3 V during such transients, making P6SMB43AHE3_B/H suitable for protecting 48 V-rated circuits and 3.3 V–12 V ICs with appropriate margin.
Is the P6SMB43AHE3_B/H AEC-Q101 qualified, and what does the "_B/H" suffix indicate?
Yes, the P6SMB43AHE3_B/H is AEC-Q101 qualified, as confirmed by Vishay's ordering information note stating "_B is available for P6SMB6.8(C)A to P6SMB220(C)A, AEC-Q101 qualified". The "_B" denotes AEC-Q101 qualification, and "/H" specifies 7" diameter plastic tape and reel packaging (750 units per reel). The "HE3" suffix indicates RoHS-compliant, AEC-Q101 qualified commercial grade construction.
How does the P6SMB43AHE3_B/H compare to bidirectional variants like P6SMB43CA?
The P6SMB43AHE3_B/H is unidirectional, meaning it protects only against reverse-polarity transients on a positive rail, with cathode connected to the protected line. In contrast, P6SMB43CA is bidirectional and symmetric-suitable for AC lines or differential buses like RS-485. P6SMB43AHE3_B/H offers tighter VBR tolerance and lower leakage than its bidirectional counterpart, but cannot suppress positive-going transients on grounded lines-so P6SMB43AHE3_B/H selection requires confirmation of unidirectional system topology.
What is the thermal resistance and derating behavior of the P6SMB43AHE3_B/H?
The P6SMB43AHE3_B/H has a typical junction-to-ambient thermal resistance (RθJA) of 100 °C/W when mounted on minimum recommended 0.2" × 0.2" copper pads. Its peak pulse power must be derated linearly above 25 °C ambient: at 85 °C, PPPM drops to ~70% of 600 W (≈420 W), per Figure 2 in the datasheet. This derating is critical for under-hood automotive use where ambient temperatures exceed 70 °C.
Can the P6SMB43AHE3_B/H be used in parallel for higher surge current handling?
No-P6SMB43AHE3_B/H should not be paralleled without external balancing resistors, due to manufacturing variations in VBR (40.9–45.2 V) causing uneven current sharing during surges. Uneven distribution risks thermal runaway in one device. For higher IPPM, select a single higher-rated part (e.g., P6SMB51A) or verify matched-bin devices with <0.5 V VBR spread per Vishay application guidance. P6SMB43AHE3_B/H is designed for standalone deployment per its rated 10.1 A capability.
P6SMB43AHE3_B/H Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- P6SMB, TransZorb®
- Packaging:
- Bulk
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 36.8V
- Voltage - Breakdown (Min):
- 40.9V
- Voltage - Clamping (Max) @ Ipp:
- 59.3V
- Current - Peak Pulse (10/1000µs):
- 10.1A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- Telecom
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -65°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMB)
P6SMB43AHE3_B/H FAQ
1.How can I place an order for P6SMB43AHE3_B/H through Aetrix?
Please submit a Request for Quotation (RFQ) for P6SMB43AHE3_B/H on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for P6SMB43AHE3_B/H reliable?
The price and inventory of P6SMB43AHE3_B/H are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for P6SMB43AHE3_B/H is usually 5 days.
3.What payment methods are accepted for P6SMB43AHE3_B/H?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for P6SMB43AHE3_B/H transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for P6SMB43AHE3_B/H?
P6SMB43AHE3_B/H orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your P6SMB43AHE3_B/H order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for P6SMB43AHE3_B/H?
For technical support, including P6SMB43AHE3_B/H datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your P6SMB43AHE3_B/H requirements.
6.How does Aetrix verify that P6SMB43AHE3_B/H is sourced from the original manufacturer or authorized distributors?
All P6SMB43AHE3_B/H products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that P6SMB43AHE3_B/H meets industry standards.
7.What is the process for return or replacement of P6SMB43AHE3_B/H?
All P6SMB43AHE3_B/H units undergo pre-shipment inspection (PSI). If there is an issue with P6SMB43AHE3_B/H, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The P6SMB43AHE3_B/H part is unused and in its original packaging.
Return procedure for P6SMB43AHE3_B/H:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
P6SMB43AHE3_B/H Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
