Vishay General Semiconductor - Diodes Division P6SMB43AHE3_B/I
- Part No.:
- P6SMB43AHE3_B/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
P6SMB43AHE3_B/I.pdf
- Description:
- 600W,43V 5%,UNIDIR,SMB TVS
- Quantity:
- Payment:

- Shipping:

Inventory:4,483
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Product details
Overview
P6SMB43AHE3_B/I from Vishay General Semiconductor is a unidirectional surface-mount Transient Voltage Suppressor (TVS) diode in the P6SMB series, designed for robust overvoltage protection of sensitive electronics. It features a 43 V breakdown voltage (VBR), 36.8 V stand-off voltage (VWM), and clamps transients up to 59.3 V at 10.1 A peak pulse current (IPPM) under 10/1000 µs waveform - ideal for safeguarding power rails and signal lines in automotive control modules.
For engineers reviewing the P6SMB43AHE3_B/I datasheet, P6SMB43AHE3_B/I pinout, P6SMB43AHE3_B/I application, or P6SMB43AHE3_B/I equivalent, key selection criteria include its AEC-Q101 qualification, SMB (DO-214AA) package compatibility with automated SMT assembly, low incremental surge resistance, and 600 W peak pulse power rating for transient immunity in harsh environments.
Technical Context
This TVS diode operates as a unidirectional clamping device with cathode-band polarity marking, leveraging glass-passivated junction technology for stable breakdown characteristics and fast response (<1 ns). Its thermal resistance (RθJA = 100 °C/W) and 150 °C maximum junction temperature support operation in automotive under-hood and industrial power supply applications.
The device meets J-STD-020 MSL Level 1 moisture sensitivity and is rated for 100 A non-repetitive forward surge current (IFSM). Its 0.101 %/°C temperature coefficient of VBR ensures predictable clamping voltage drift across temperature, critical for reliable protection in wide-temperature-range systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VBR (min/max) | 40.9 V / 45.2 V at 1.0 mA test current - defines precise clamping onset threshold for overvoltage events |
| VWM | 36.8 V - maximum continuous reverse operating voltage before leakage exceeds 1.0 µA |
| VC @ IPPM | 59.3 V at 10.1 A - clamped voltage during 600 W transient, limiting stress on downstream ICs |
| PPPM | 600 W - peak pulse power handling per 10/1000 µs waveform, enabling robust ESD and load-dump immunity |
| IPPM | 10.1 A - peak pulse current capability directly tied to system-level surge compliance (e.g., ISO 7637-2) |
| TJ max | +150 °C - supports operation in high-ambient environments such as engine control units and industrial motor drives |
| AEC-Q101 Qualified | Yes - validated for automotive-grade reliability including temperature cycling, HTRB, and ESD testing |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, low-profile case with matte tin-plated leads solderable per J-STD-002 and JESD 22-B102. Cathode indicated by band; anode is unmarked end.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Cathode (banded end) | Reverse-biased terminal during normal operation | Connected to protected line (e.g., 12 V rail); conducts only during overvoltage to shunt energy to ground |
| Anode (unbanded end) | Reference/ground return path | Typically tied to system ground or low-impedance return plane; completes clamping current path |
Key Features
| Feature | Design Value |
|---|---|
| 600 W peak pulse power (10/1000 µs) | Enables compliance with ISO 7637-2 Pulse 1, 2a, 3a/b and IEC 61000-4-5 surge standards without external derating |
| Glass passivated junction | Ensures long-term stability of VBR and low leakage (<1 µA at VWM) across temperature and lifetime |
| AEC-Q101 qualified (HE3 suffix) | Validated for automotive use including temperature cycling, high-temperature reverse bias, and mechanical shock |
| MSL Level 1 (260 °C peak reflow) | Supports single-pass lead-free reflow without moisture-related popcorn failure or delamination |
| Low incremental surge resistance | Minimizes clamping voltage overshoot during fast transients, improving protection margin for 3.3 V/5 V logic interfaces |
Applications
| Automotive Power Rail Protection | Industrial Sensor Signal Line Clamping |
|---|---|
|
Use Scenario: Protecting 12 V battery-supplied microcontroller power inputs against load dump and alternator ripple in body control modules. IC Role / Device Role / Timing Role: Unidirectional TVS clamping device placed between input rail and chassis ground. Use Value: Limits transient voltage to ≤59.3 V, preventing latch-up or permanent damage to 3.3 V/5 V regulators and MCU I/O. |
Use Scenario: Safeguarding analog sensor outputs (e.g., pressure, temperature) connected to ADC inputs in factory automation PLCs. IC Role / Device Role / Timing Role: Low-capacitance clamping element on differential or single-ended signal traces. Use Value: Suppresses ESD and switching noise spikes while maintaining signal integrity due to fast <1 ns response and minimal leakage. |
| Telecom DC Power Input Protection | Consumer Device USB Port Surge Suppression |
|
Use Scenario: Securing 48 V DC input of PoE-powered network switches against induced surges from nearby lightning strikes or cable coupling. IC Role / Device Role / Timing Role: Primary overvoltage clamp on primary-side DC bus before DC/DC conversion stage. Use Value: Absorbs up to 600 W pulses without degradation, preserving upstream fuse coordination and downstream converter reliability. |
Use Scenario: Adding secondary-level surge protection on VBUS line of USB-C ports in portable audio devices and smart home hubs. IC Role / Device Role / Timing Role: Standoff-rated TVS placed after primary ESD diode array to handle higher-energy transients. Use Value: Provides 36.8 V working voltage margin above 5 V nominal, ensuring no conduction during normal operation while clamping >15 kV ESD events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ43A-E3/5B | Same VBR range (40.9–45.2 V), but lower PPPM = 400 W and higher VC = 69.4 V at 5.8 A | Limited to lower-energy transients; not AEC-Q101 qualified | Select when cost-sensitive industrial designs require basic ESD/EMI suppression without automotive qualification |
| 1.5SMC43A | Higher package thermal resistance (RθJA ≈ 120 °C/W), same VBR, but VC = 69.7 V at 8.6 A | Less effective clamping margin; requires larger PCB copper area for thermal management | Choose only if legacy SMC footprint reuse is mandatory and peak pulse energy is below 400 W |
Compared with SMAJ43A-E3/5B and 1.5SMC43A, the P6SMB43AHE3_B/I delivers superior clamping performance (59.3 V vs. ≥69.4 V), higher surge capacity (600 W), and automotive-grade reliability - making it the preferred choice for safety-critical or high-reliability 12–48 V systems where voltage margin and qualification matter.
Availability
P6SMB43AHE3_B/I is available at Aetrix Electronics and suitable for automotive electronic control units, industrial sensor interface modules, and telecom power supply designs requiring stable component supply with full traceability and long-term lifecycle support.
Supply support for P6SMB43AHE3_B/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in high-reliability diodes, MOSFETs, and passive components for automotive, industrial, and computing markets.
The P6SMB Series is engineered specifically for high-power transient suppression in space-constrained SMT applications, combining AEC-Q101 qualification, low-profile SMB packaging, and consistent 600 W surge capability across the voltage range.
FAQ
What is the breakdown voltage tolerance of the P6SMB43AHE3_B/I?
The P6SMB43AHE3_B/I has a specified breakdown voltage (VBR) range of 40.9 V to 45.2 V at 1.0 mA test current, representing a ±5% tolerance around the nominal 43 V rating. This tight tolerance ensures predictable clamping behavior in precision protection circuits and supports accurate margin analysis against downstream IC absolute maximum ratings. The P6SMB43AHE3_B/I maintains this specification across its full operating temperature range.
Is the P6SMB43AHE3_B/I suitable for automotive applications?
Yes, the P6SMB43AHE3_B/I is explicitly AEC-Q101 qualified, as confirmed by its HE3 suffix and "_B" revision code indicating automotive-grade screening. It undergoes rigorous testing for temperature cycling, high-temperature reverse bias, and mechanical shock - meeting requirements for under-hood and cabin electronics. The P6SMB43AHE3_B/I is commonly deployed in automotive body control modules, infotainment power supplies, and ADAS sensor interfaces.
What does the "/I" suffix mean in P6SMB43AHE3_B/I?
The "/I" suffix in P6SMB43AHE3_B/I denotes packaging in a 13-inch diameter plastic tape and reel containing 3200 units - optimized for high-volume SMT assembly lines. This contrasts with "/H", which indicates a 7-inch reel of 750 units. Both share identical electrical and reliability specifications; the "/I" variant supports extended production runs without frequent reel changes, reducing line downtime during manufacturing of the P6SMB43AHE3_B/I.
How does the clamping voltage of the P6SMB43AHE3_B/I compare to its breakdown voltage?
The P6SMB43AHE3_B/I clamps at 59.3 V when subjected to its rated 10.1 A peak pulse current (IPPM), which is approximately 38% above its minimum breakdown voltage of 40.9 V. This design margin ensures that downstream components experience significantly lower transient stress than the TVS's own breakdown threshold - a critical factor in protecting 3.3 V or 5 V logic rails. The P6SMB43AHE3_B/I achieves this with low incremental surge resistance, minimizing voltage overshoot during fast-rising transients.
Can the P6SMB43AHE3_B/I be used in bidirectional configurations?
No, the P6SMB43AHE3_B/I is a unidirectional TVS diode, identified by its "A" suffix and cathode band marking. Bidirectional variants in the same series use the "CA" suffix (e.g., P6SMB43CA). Using the P6SMB43AHE3_B/I in reverse-biased AC or floating-signal applications would result in unintended conduction during negative half-cycles. For bidirectional protection, select the AEC-Q101-qualified P6SMB43CAHE3_B/I instead.
P6SMB43AHE3_B/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- P6SMB, TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 36.8V
- Voltage - Breakdown (Min):
- 40.9V
- Voltage - Clamping (Max) @ Ipp:
- 59.3V
- Current - Peak Pulse (10/1000µs):
- 10.1A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- Telecom
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -65°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMB)
P6SMB43AHE3_B/I FAQ
1.How can I place an order for P6SMB43AHE3_B/I through Aetrix?
Please submit a Request for Quotation (RFQ) for P6SMB43AHE3_B/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for P6SMB43AHE3_B/I reliable?
The price and inventory of P6SMB43AHE3_B/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for P6SMB43AHE3_B/I is usually 5 days.
3.What payment methods are accepted for P6SMB43AHE3_B/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for P6SMB43AHE3_B/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for P6SMB43AHE3_B/I?
P6SMB43AHE3_B/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your P6SMB43AHE3_B/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for P6SMB43AHE3_B/I?
For technical support, including P6SMB43AHE3_B/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your P6SMB43AHE3_B/I requirements.
6.How does Aetrix verify that P6SMB43AHE3_B/I is sourced from the original manufacturer or authorized distributors?
All P6SMB43AHE3_B/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that P6SMB43AHE3_B/I meets industry standards.
7.What is the process for return or replacement of P6SMB43AHE3_B/I?
All P6SMB43AHE3_B/I units undergo pre-shipment inspection (PSI). If there is an issue with P6SMB43AHE3_B/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The P6SMB43AHE3_B/I part is unused and in its original packaging.
Return procedure for P6SMB43AHE3_B/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
P6SMB43AHE3_B/I Tags

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Nexperia USA Inc.

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Toshiba Semiconductor and Storage

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Diodes Incorporated
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