Vishay General Semiconductor - Diodes Division P6SMB51AHE3_A/I
- Part No.:
- P6SMB51AHE3_A/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
P6SMB51AHE3_A/I.pdf
- Description:
- TVS DIODE 43.6VWM 70.1VC DO214AA
- Quantity:
- Payment:

- Shipping:

Inventory:6,499
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
P6SMB51AHE3_A/I from Vishay General Semiconductor is a unidirectional surface-mount Transient Voltage Suppressor (TVS) diode in the SMB (DO-214AA) package, designed for clamping voltage transients on power and signal lines. It features a 43.6 V stand-off voltage (VWM), 48.5–53.6 V breakdown voltage (VBR) at 1 mA, 70.1 V maximum clamping voltage (VC) at 8.6 A peak pulse current, and 600 W peak pulse power capability with a 10/1000 µs waveform - used to protect MOSFETs, ICs, and sensor interfaces in industrial and automotive electronics.
For engineers reviewing the P6SMB51AHE3_A/I datasheet, P6SMB51AHE3_A/I pinout, P6SMB51AHE3_A/I application, or P6SMB51AHE3_A/I equivalent, this device delivers AEC-Q101 qualification, low incremental surge resistance, fast response time, and MSL Level 1 moisture sensitivity - critical for high-reliability board-level ESD and surge protection design.
Technical Context
This TVS diode operates as a unidirectional clamping device with cathode-band polarity marking, optimized for transient suppression on DC power rails and low-speed signal paths. Its glass-passivated junction ensures stable leakage performance (<1.0 µA at VWM) and robust surge handling up to 100 A IFSM (8.3 ms half-sine).
The device is rated for continuous operation from −65 °C to +150 °C junction temperature and exhibits a positive temperature coefficient of VBR (+0.102 %/°C), enabling predictable voltage drift under thermal stress. Thermal resistance is 100 °C/W (junction-to-ambient, typical) on standard 0.2" × 0.2" copper pads.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 43.6 V - Maximum reverse working voltage before clamping begins; sets safe operating margin below circuit supply rails. |
| VBR (min/max) | 48.5 V / 53.6 V at 1 mA - Confirmed breakdown threshold range; defines minimum clamping onset under standardized test conditions. |
| VC @ IPPM | 70.1 V at 8.6 A - Clamped voltage during 10/1000 µs surge; determines worst-case overvoltage seen by protected downstream components. |
| PPPM | 600 W - Peak pulse power rating; supports repetitive transient events at 0.01 % duty cycle without degradation. |
| IPPM | 8.6 A - Peak pulse current capacity at VC; directly correlates to surge energy absorption (≈ 0.086 J per pulse). |
| TJ max. | +150 °C - Maximum junction temperature; enables use in under-hood automotive or high-ambient industrial environments. |
| AEC-Q101 | Qualified - Validated for automotive-grade reliability including temperature cycling, HTRB, and ESD testing per AEC specification. |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, low-profile plastic case with matte tin-plated leads solderable per J-STD-002 and JESD 22-B102. Cathode identified by band marking on one end.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Low-side connection point | Connected to ground or return path; completes clamping loop when transient exceeds VWM. |
| Cathode | High-side connection point | Connected to protected line (e.g., 48 V rail); reverse-biased during normal operation, avalanches during overvoltage. |
Key Features
| Feature | Design Value |
|---|---|
| 600 W peak pulse power | Enables robust protection against IEC 61000-4-5 Level 4 surges (4 kV line-earth) on 24–48 V systems without derating. |
| AEC-Q101 qualified | Validated for automotive powertrain and body electronics applications requiring extended temperature and lifetime reliability. |
| MSL Level 1 (260 °C peak) | Compatible with standard lead-free reflow profiles; no pre-baking required prior to assembly. |
| Glass passivated junction | Ensures stable leakage current (<1 µA) and long-term parameter stability across humidity and thermal cycling. |
| Low clamping ratio (VC/VBR ≈ 1.42) | Minimizes overvoltage overshoot during fast transients, reducing stress on downstream MOSFET gate oxides or IC inputs. |
Applications
| Automotive Body Control Module (BCM) | Industrial PLC Digital Input Protection |
|---|---|
Use Scenario: Protecting 12 V/24 V microcontroller I/O lines and CAN transceiver power rails from load-dump and inductive switching transients. IC Role / Device Role / Timing Role: Unidirectional clamping TVS placed between supply rail and ground, responding within <1 ns to suppress >100 V spikes. Use Value: Prevents latch-up or permanent damage to MCU GPIOs and transceivers during vehicle battery disconnect/reconnect events. |
Use Scenario: Safeguarding 24 V digital input channels on programmable logic controllers exposed to relay coil flyback and field wiring surges. IC Role / Device Role / Timing Role: Standoff-rated TVS on input front-end, conducting only during >43.6 V transients while remaining high-impedance during normal operation. Use Value: Eliminates false triggering and extends mean time between failures (MTBF) in factory automation environments. |
| Telecom Power Supply Output Rail | Consumer Appliance Motor Driver Board |
Use Scenario: Clamping output transients on isolated 48 V telecom DC-DC converters feeding baseband processing units. IC Role / Device Role / Timing Role: Secondary-side TVS on regulated output, absorbing coupled noise from primary-side switching and external lightning-induced surges. Use Value: Maintains clean 48 V bus integrity and avoids brownout resets in mission-critical network infrastructure equipment. |
Use Scenario: Protecting gate drivers and bootstrap circuits in BLDC motor inverters subjected to back-EMF spikes during commutation. IC Role / Device Role / Timing Role: Localized TVS on low-voltage control rails (e.g., 15 V gate drive supply), shunting inductive kickback away from driver ICs. Use Value: Reduces gate oxide stress and prevents premature failure of high-side N-channel MOSFET drivers in white goods. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ51A-E3/5B | Same VWM (43.6 V), identical SMB package, but lower PPPM (400 W) and higher VC (83.5 V at 4.8 A). | Not AEC-Q101 qualified; suitable for commercial-grade consumer or computing applications only. | Select when cost sensitivity outweighs automotive qualification and surge margin requirements. |
| 1.5SMC51A | Higher package thermal mass (SMC/DO-214AB), same VWM/VBR, but larger footprint and 1.5 kW PPPM rating. | Used where PCB space permits and higher single-pulse energy absorption (>1.5×) is required. | Choose for industrial power supplies needing enhanced surge endurance beyond 600 W. |
Compared with SMAJ51A-E3/5B and 1.5SMC51A, the P6SMB51AHE3_A/I offers balanced surge capability (600 W), AEC-Q101 qualification, and compact SMB footprint - making it optimal for space-constrained, automotive-qualified designs where both reliability and board area efficiency are critical.
Availability
P6SMB51AHE3_A/I is available at Aetrix Electronics and suitable for automotive body electronics, industrial PLC input modules, and telecom power supply protection requiring stable component supply, full traceability, and lifecycle continuity.
Supply support for P6SMB51AHE3_A/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, and protection devices with emphasis on reliability, precision, and application-specific validation.
The P6SMB Series targets board-level transient suppression in automotive, industrial, and telecom systems - engineered for high-energy clamping, AEC-Q101 compliance, and compatibility with automated SMT assembly.
FAQ
What is the maximum clamping voltage of the P6SMB51AHE3_A/I under a 10/1000 µs surge?
The P6SMB51AHE3_A/I has a maximum clamping voltage (VC) of 70.1 V at 8.6 A peak pulse current (IPPM) under a 10/1000 µs waveform. This value is measured per JEDEC standards and represents the worst-case voltage imposed on protected circuitry during a defined surge event. The P6SMB51AHE3_A/I maintains this clamping performance across its full operating temperature range and after repeated surge exposure, provided derating guidelines are followed.
Is the P6SMB51AHE3_A/I suitable for automotive applications?
Yes, the P6SMB51AHE3_A/I is AEC-Q101 qualified, as indicated by the "HE3" suffix and documented in Vishay's official specifications. It undergoes rigorous stress testing including temperature cycling, high-temperature reverse bias (HTRB), and ESD qualification per AEC-Q101 Rev D. The P6SMB51AHE3_A/I is approved for use in automotive body control modules, infotainment power supplies, and sensor interface circuits where transient immunity and long-term reliability are mandatory.
What does the "_A/I" suffix in P6SMB51AHE3_A/I signify?
The "_A/I" suffix in P6SMB51AHE3_A/I denotes packaging configuration: "A" indicates unidirectional polarity, "I" specifies 13-inch diameter plastic tape-and-reel delivery (3200 units per reel). This matches Vishay's ordering nomenclature where "I" replaces "5B" in alternate coding. The P6SMB51AHE3_A/I is RoHS-compliant, halogen-free, and rated for MSL Level 1 handling - confirming full compatibility with modern lead-free SMT processes.
How does the P6SMB51AHE3_A/I compare to bidirectional TVS diodes like P6SMB51CA?
The P6SMB51AHE3_A/I is unidirectional and intended for DC rail protection with defined polarity (cathode to line), whereas P6SMB51CA is bidirectional and used on AC or floating signal lines. The P6SMB51AHE3_A/I provides lower leakage (<1 µA at VWM) and tighter VBR tolerance than its bidirectional counterpart. For 48 V DC systems with ground-referenced transients, the P6SMB51AHE3_A/I delivers superior clamping consistency and reduced standby power loss compared to bidirectional alternatives.
What is the thermal resistance of the P6SMB51AHE3_A/I, and how does it affect layout design?
The P6SMB51AHE3_A/I has a typical junction-to-ambient thermal resistance (RθJA) of 100 °C/W when mounted on 0.2" × 0.2" (5.0 mm × 5.0 mm) copper pads per terminal. This value assumes minimal copper area; increasing pad size or adding internal ground/power planes reduces RθJA and improves surge endurance. Layout must maintain symmetric thermal paths for both terminals to avoid localized heating - critical for maintaining the P6SMB51AHE3_A/I's 150 °C TJ rating during repetitive surge events.
P6SMB51AHE3_A/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- P6SMB, TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 43.6V
- Voltage - Breakdown (Min):
- 48.5V
- Voltage - Clamping (Max) @ Ipp:
- 70.1V
- Current - Peak Pulse (10/1000µs):
- 8.6A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -65°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMB)
P6SMB51AHE3_A/I FAQ
1.How can I place an order for P6SMB51AHE3_A/I through Aetrix?
Please submit a Request for Quotation (RFQ) for P6SMB51AHE3_A/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for P6SMB51AHE3_A/I reliable?
The price and inventory of P6SMB51AHE3_A/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for P6SMB51AHE3_A/I is usually 5 days.
3.What payment methods are accepted for P6SMB51AHE3_A/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for P6SMB51AHE3_A/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for P6SMB51AHE3_A/I?
P6SMB51AHE3_A/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your P6SMB51AHE3_A/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for P6SMB51AHE3_A/I?
For technical support, including P6SMB51AHE3_A/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your P6SMB51AHE3_A/I requirements.
6.How does Aetrix verify that P6SMB51AHE3_A/I is sourced from the original manufacturer or authorized distributors?
All P6SMB51AHE3_A/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that P6SMB51AHE3_A/I meets industry standards.
7.What is the process for return or replacement of P6SMB51AHE3_A/I?
All P6SMB51AHE3_A/I units undergo pre-shipment inspection (PSI). If there is an issue with P6SMB51AHE3_A/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The P6SMB51AHE3_A/I part is unused and in its original packaging.
Return procedure for P6SMB51AHE3_A/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
P6SMB51AHE3_A/I Tags

-
ESD9B5.0ST5G
onsemi

-
DESD3V3E1BL-7B
Diodes Incorporated

-
ESD5Z3.3T1G
onsemi

-
D5V0H1B2LP-7B
Diodes Incorporated

-
D5V0P1B2LP-7B
Diodes Incorporated

-
DESD5V0U1BA-7
Diodes Incorporated

-
ESD5Z5.0T1G
onsemi

-
DESD5V0U1BB-7
Diodes Incorporated

-
D12V0L1B2LP-7B
Diodes Incorporated

-
PESD2V0Y1BSFYL
Nexperia USA Inc.

-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage

-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

