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Vishay General Semiconductor - Diodes Division P6SMB68AHE3_B/H
- Part No.:
- P6SMB68AHE3_B/H
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
P6SMB68AHE3_B/H.pdf
- Description:
- 600W,68V 5%,UNIDIR,SMB TVS
- Quantity:
- Payment:
- Shipping:
Inventory:3,183
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Product details
Overview
P6SMB68AHE3_B/H from Vishay General Semiconductor is a unidirectional surface-mount Transient Voltage Suppressor (TVS) diode in SMB (DO-214AA) package, designed for clamping voltage transients on power and signal lines. It features a 68 V breakdown voltage (VBR = 64.6–71.4 V at IT = 1.0 mA), 58.1 V stand-off voltage (VWM), and 92.0 V maximum clamping voltage (VC) at 6.5 A peak pulse current (IPPM), delivering 600 W peak pulse power with 10/1000 μs waveform - ideal for protecting automotive-grade MOSFETs and sensor interfaces.
For engineers reviewing the P6SMB68AHE3_B/H datasheet, P6SMB68AHE3_B/H pinout, P6SMB68AHE3_B/H application, or P6SMB68AHE3_B/H equivalent, key selection criteria include its AEC-Q101 qualification, unidirectional polarity with cathode band marking, low incremental surge resistance, and compatibility with automated SMT placement on PCBs requiring robust ESD and lightning surge immunity per IEC 61000-4-2/4-5.
Technical Context
This TVS diode operates as a voltage-clamping protection device that enters avalanche conduction when reverse voltage exceeds its breakdown threshold, diverting transient energy away from downstream ICs. Its glass-passivated junction ensures stable leakage performance (<1.0 μA at VWM) and fast response time (<1.0 ns), while the SMB package supports high thermal dissipation (RθJA = 100 °C/W) under repetitive 0.01% duty cycle surges.
The P6SMB68AHE3_B/H is rated for continuous operation from −65 °C to +150 °C junction temperature, meets MSL Level 1 per J-STD-020 (peak reflow ≤260 °C), and uses matte tin-plated leads compliant with J-STD-002 and JESD 22-B102 solderability standards. Its AEC-Q101 qualification confirms suitability for automotive powertrain and body electronics where reliability under thermal cycling and mechanical shock is critical.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VBR (min/max) | 64.6 V / 71.4 V at 1.0 mA test current - defines precise avalanche onset window for predictable clamping behavior |
| VWM | 58.1 V - maximum steady-state reverse voltage before significant leakage; sets safe operating margin below VBR |
| VC @ IPPM | 92.0 V at 6.5 A - clamped voltage during 600 W transient; determines protected circuit's maximum overvoltage exposure |
| PPPM | 600 W with 10/1000 μs waveform - quantifies single-pulse surge handling capability for lightning and inductive switching events |
| IPPM | 6.5 A - peak current the device safely shunts without degradation; directly linked to PCB trace width and grounding design |
| TJ max. | +150 °C - enables use in under-hood automotive environments and industrial power supplies with elevated ambient temperatures |
| AEC-Q101 | Qualified - validated for automotive applications including engine control units, ADAS sensors, and infotainment power rails |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, low-profile plastic case with UL 94 V-0 flammability rating; cathode indicated by band on one end.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward conduction terminal (unidirectional) | Connected to lower-potential side of protected line; forms forward path during positive transients or DC bias |
| Cathode | Avalanche conduction terminal (unidirectional) | Connected to higher-potential side; conducts reverse avalanche current during overvoltage events; marked with band |
Key Features
| Feature | Design Value |
|---|---|
| 600 W peak pulse power (10/1000 μs) | Enables protection against severe IEC 61000-4-5 level 4 surges (4 kV line-to-earth) without derating in standard layouts |
| AEC-Q101 qualified (HE3 suffix) | Validated for automotive-grade reliability including temperature cycling, humidity testing, and mechanical shock per ISO 16750 |
| Glass passivated junction | Ensures stable VBR tolerance (±5%) and low leakage (<1.0 μA) across life and temperature, critical for battery-powered sensors |
| MSL Level 1, 260 °C peak reflow | Supports lead-free reflow assembly without popcorn effect or delamination; no pre-baking required |
| Low incremental surge resistance | Minimizes VC overshoot during fast-rising transients (<1 ns response), improving protection margin for 3.3 V/5 V logic |
Applications
| Automotive Power Rail Protection | Industrial Sensor Interface Protection |
|---|---|
|
Use Scenario: Protecting 12 V battery-fed ECUs from load dump (ISO 7637-2 Pulse 5a) and alternator transients. IC Role / Device Role: Unidirectional TVS placed between power rail and ground to clamp spikes above 58.1 V. Use Value: Limits voltage seen by MCU and CAN transceivers to ≤92.0 V during 600 W surges, preventing latch-up or gate oxide damage. |
Use Scenario: Shielding analog output lines of pressure/temperature sensors in factory automation systems from ESD and cable discharge. IC Role / Device Role: TVS mounted at connector entry point to absorb ±8 kV contact ESD (IEC 61000-4-2) before signal conditioning stage. Use Value: Clamps transients within nanoseconds while adding <1 pF capacitance, preserving signal integrity for 0–10 V or 4–20 mA outputs. |
| Telecom Power Supply Input | Consumer Device USB Port Protection |
|
Use Scenario: Safeguarding AC/DC adapter inputs against lightning-induced surges on telecom central office power feeds. IC Role / Device Role: Primary-stage TVS on bulk input rail upstream of bridge rectifier and bulk capacitor. Use Value: Handles repetitive 10/1000 μs surges up to 600 W with 0.01% duty cycle, extending capacitor and MOSFET lifetime. |
Use Scenario: Adding secondary-level surge immunity to USB 2.0 VBUS lines in smart home hubs exposed to user-handling ESD. IC Role / Device Role: Unidirectional TVS between VBUS and GND, sized to survive >10,000 contact ESD events per IEC 61000-4-2. Use Value: Maintains <1.0 μA leakage at 5 V to avoid battery drain, while clamping 15 kV air discharge to <30 V at 30 A peak. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ68A-E3/5B | Same VBR range (64.6–71.4 V), but SMA package (DO-214AC); 400 W PPPM, higher RθJA (140 °C/W) | Limited to lower-energy transients; less suitable for automotive load dump due to reduced surge rating | Select when board space allows larger SMA footprint and surge requirements are ≤400 W |
| 1.5SMC68AHE3_A | Same VBR/VC, but SMC (DO-214AB) package; 1500 W PPPM, higher IPPM (16.3 A) | Better suited for high-energy industrial mains protection; larger footprint and higher cost | Choose for applications demanding >600 W clamping headroom, e.g., motor drive DC bus protection |
Compared with SMAJ68A-E3/5B, P6SMB68AHE3_B/H offers 50% higher peak pulse power in a smaller SMB footprint; versus 1.5SMC68AHE3_A, it trades surge capacity for compactness and cost efficiency in space-constrained automotive modules.
Availability
P6SMB68AHE3_B/H is available at Aetrix Electronics and suitable for automotive electronic control units, industrial sensor nodes, and telecom power supply inputs requiring stable component supply with AEC-Q101 assurance and RoHS compliance.
Supply support for P6SMB68AHE3_B/H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, MOSFETs, optoelectronics, and passive components with emphasis on reliability and application-specific performance.
The P6SMB Series is engineered for high-reliability transient suppression in automotive, industrial, and telecom infrastructure, combining AEC-Q101 qualification, robust surge ratings, and SMT-ready packaging for automated manufacturing.
FAQ
What is the breakdown voltage tolerance of P6SMB68AHE3_B/H?
The P6SMB68AHE3_B/H has a specified breakdown voltage range of 64.6 V to 71.4 V at 1.0 mA test current, representing a ±5% tolerance around the nominal 68 V rating. This tight VBR window ensures consistent clamping behavior across production lots and temperature ranges, critical for protecting sensitive 60 V-rated power stages. The P6SMB68AHE3_B/H maintains this specification under full AEC-Q101 stress testing.
Is P6SMB68AHE3_B/H suitable for bidirectional transient protection?
No, P6SMB68AHE3_B/H is a unidirectional TVS diode, identified by the "A" suffix and cathode band marking. For bidirectional protection, Vishay offers the P6SMB68CA variant. Using P6SMB68AHE3_B/H in bidirectional applications would allow forward conduction during negative transients, potentially damaging downstream circuitry. Always verify polarity alignment during layout - the cathode must connect toward the higher-potential side of the protected line.
What does the "HE3_B/H" suffix indicate in P6SMB68AHE3_B/H?
The "HE3" denotes RoHS-compliant construction with AEC-Q101 qualification; "B" indicates AEC-Q101 qualification level for devices from P6SMB6.8A to P6SMB220A; "H" specifies 7-inch tape-and-reel packaging with 750 units per reel. This full suffix confirms the P6SMB68AHE3_B/H meets automotive reliability standards, environmental compliance, and SMT assembly requirements - distinct from commercial-grade E3 or M3 variants.
How does P6SMB68AHE3_B/H perform under repeated surge stress?
P6SMB68AHE3_B/H is rated for repetitive 10/1000 μs surges at 0.01% duty cycle, meaning it can sustain 600 W pulses once every 10 seconds indefinitely without parameter shift. Its glass-passivated junction and low incremental resistance ensure minimal VC drift after >1000 surges. Derating is required above TA = 25 °C per Figure 2 in the datasheet - at 85 °C ambient, maximum IPPM drops to ~4.2 A to maintain safe junction temperature.
Can P6SMB68AHE3_B/H replace older P6SMB68A-E3 parts in existing designs?
Yes, P6SMB68AHE3_B/H is a direct drop-in replacement for P6SMB68A-E3 in terms of electrical specs, package dimensions, and soldering profile. The HE3 variant adds AEC-Q101 qualification and tighter process controls, while maintaining identical VBR, VC, and thermal characteristics. No PCB or schematic changes are needed - only update the BOM and ensure traceability documentation reflects the enhanced automotive qualification of the P6SMB68AHE3_B/H.
P6SMB68AHE3_B/H Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- P6SMB, TransZorb®
- Packaging:
- Bulk
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 58.1V
- Voltage - Breakdown (Min):
- 64.6V
- Voltage - Clamping (Max) @ Ipp:
- 92V
- Current - Peak Pulse (10/1000µs):
- 6.5A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- Telecom
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -65°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMB)
P6SMB68AHE3_B/H FAQ
1.How can I place an order for P6SMB68AHE3_B/H through Aetrix?
Please submit a Request for Quotation (RFQ) for P6SMB68AHE3_B/H on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for P6SMB68AHE3_B/H reliable?
The price and inventory of P6SMB68AHE3_B/H are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for P6SMB68AHE3_B/H is usually 5 days.
3.What payment methods are accepted for P6SMB68AHE3_B/H?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for P6SMB68AHE3_B/H transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for P6SMB68AHE3_B/H?
P6SMB68AHE3_B/H orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your P6SMB68AHE3_B/H order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for P6SMB68AHE3_B/H?
For technical support, including P6SMB68AHE3_B/H datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your P6SMB68AHE3_B/H requirements.
6.How does Aetrix verify that P6SMB68AHE3_B/H is sourced from the original manufacturer or authorized distributors?
All P6SMB68AHE3_B/H products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that P6SMB68AHE3_B/H meets industry standards.
7.What is the process for return or replacement of P6SMB68AHE3_B/H?
All P6SMB68AHE3_B/H units undergo pre-shipment inspection (PSI). If there is an issue with P6SMB68AHE3_B/H, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The P6SMB68AHE3_B/H part is unused and in its original packaging.
Return procedure for P6SMB68AHE3_B/H:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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