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Vishay General Semiconductor - Diodes Division P6SMB75AHE3/5B

Part No.:
P6SMB75AHE3/5B
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
TVS Diodes
Package:
DO-214AA, SMB
Datasheet:
AetrixP6SMB75AHE3/5B.pdf
Description:
TVS DIODE 64.1VWM 103VC DO214AA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:8,410

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Product details

Overview

P6SMB75AHE3/5B from Vishay General Semiconductor is a unidirectional surface-mount Transient Voltage Suppressor (TVS) diode in SMB (DO-214AA) package, designed for clamping voltage transients on power and signal lines. It features a 75 V breakdown voltage (VBR = 71.3–78.8 V at IT = 1.0 mA), 64.1 V stand-off voltage (VWM), 103 V maximum clamping voltage (VC) at 5.8 A peak pulse current (IPPM), and 600 W peak pulse power rating with 10/1000 μs waveform - used to protect MOSFETs, ICs, and sensor interfaces in industrial power supplies.

For engineers reviewing the P6SMB75AHE3/5B datasheet, P6SMB75AHE3/5B pinout, P6SMB75AHE3/5B application, or P6SMB75AHE3/5B equivalent, this device is selected for robust overvoltage protection where AEC-Q101 qualification, low incremental surge resistance, and fast response time (<1 ns) are required in automotive-grade power rail and interface line designs.

Technical Context

This unidirectional TVS diode operates as a voltage-clamping shunt device triggered by reverse-biased avalanche breakdown. Its glass-passivated junction ensures stable leakage performance (≤1.0 μA at VWM) and repeatable clamping behavior across temperature (−65 °C to +150 °C).

The device delivers 600 W peak pulse power handling under standardized 10/1000 μs waveform conditions, with thermal resistance of RθJA = 100 °C/W and RθJL = 20 °C/W, enabling reliable operation on standard 0.2" × 0.2" copper pads without active cooling in space-constrained PCB layouts.

Key Specifications

Parameter Value and Actual Design Meaning
VBR (min/max) 71.3 V / 78.8 V at 1.0 mA test current - defines precise avalanche onset window for predictable clamping threshold
VWM 64.1 V - maximum continuous reverse operating voltage before leakage exceeds 1.0 μA
VC @ IPPM 103 V at 5.8 A - clamped voltage during 600 W transient event, limiting downstream stress
IPPM 5.8 A - peak pulse current capability under 10/1000 μs waveform, derated above 25 °C
PPPM 600 W - peak pulse power rating per JEDEC-standard waveform, defining transient energy absorption capacity
TJ max. +150 °C - maximum junction temperature enabling use in under-hood automotive and industrial ambient environments
Package SMB (DO-214AA) - surface-mount outline with 0.220" × 0.130" footprint, compatible with automated placement and reflow

Pinout & Package

SMB (DO-214AA) package: molded plastic case with matte tin-plated leads, RoHS-compliant and AEC-Q101 qualified (HE3 suffix), MSL Level 1, 260 °C lead-free reflow compatible.

Pin/Terminal Circuit Role Design Meaning
Anode Forward conduction terminal Connected to lower-potential side of protected line; enables unidirectional clamping only during reverse overvoltage events
Cathode (banded end) Avalanche breakdown terminal Connected to higher-potential side (e.g., VIN or signal line); conducts transient current to ground when VREV > VBR

Key Features

Feature Design Value
600 W peak pulse power (10/1000 μs) Enables single-device protection against IEC 61000-4-5 Level 4 surges (4 kV/2 Ω) on 12 V/24 V rails
AEC-Q101 qualified (HE3 suffix) Validated for automotive power electronics including body control modules and ADAS sensor interfaces
Glass passivated junction Ensures long-term stability of VBR and leakage under thermal cycling and humidity exposure
Low clamping ratio (VC/VBR ≈ 1.37) Minimizes overvoltage overshoot during fast transients, reducing risk of gate oxide damage in MOSFETs
MSL Level 1, 260 °C peak reflow Supports standard lead-free assembly without moisture sensitivity concerns or baking requirements

Applications

Automotive Power Rail Protection Industrial Sensor Interface Protection

Use Scenario: Protecting 12 V battery-fed ECUs from load dump and alternator ripple transients.

IC Role / Device Role / Timing Role: Unidirectional shunt TVS placed between VBAT and chassis ground to clamp spikes up to ±100 V.

Use Value: Limits voltage seen by downstream DC/DC converters and microcontrollers to ≤103 V, preventing latch-up or permanent damage.

Use Scenario: Safeguarding analog output lines (e.g., 4–20 mA current loops) in factory automation sensors.

IC Role / Device Role / Timing Role: TVS connected across signal and return lines to suppress ESD and inductive switching noise.

Use Value: Clamps transients within <1 ns while maintaining <1.0 μA leakage at 64.1 V, preserving signal integrity and measurement accuracy.

Telecom Power Input Protection Consumer Power Adapter Output Protection

Use Scenario: Guarding PoE-powered equipment inputs against induced lightning surges on Ethernet cables.

IC Role / Device Role / Timing Role: Front-end TVS on DC input stage of IEEE 802.3af/at PD circuits.

Use Value: Absorbs 600 W pulses without degradation, meeting GR-1089-CORE Level 3 surge immunity requirements.

Use Scenario: Secondary-side overvoltage suppression in AC/DC adapters for USB-C PD and smart home devices.

IC Role / Device Role / Timing Role: Clamp diode on +5 V/9 V/12 V output rails to prevent damage during no-load or short-circuit recovery.

Use Value: Maintains 64.1 V stand-off while delivering 103 V clamping, ensuring compliance with UL 62368-1 transient limits.

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient voltage suppression applications.

Alternative Part Technical Difference Application Difference Selection Advice
SMAJ75A-E3/61 Same SMB package, identical VBR (71.3–78.8 V), but rated for 400 W PPPM and not AEC-Q101 qualified Limited to commercial-grade consumer/industrial use; lacks automotive reliability validation Select when cost sensitivity outweighs automotive qualification requirements and 400 W pulse power suffices
1.5SMC75A Higher-power SMC package (same VBR, 1500 W PPPM), larger footprint (0.320" × 0.260"), RθJA = 30 °C/W Requires more PCB area and supports higher-energy transients; less suitable for dense automotive modules Choose for legacy designs needing higher surge margin or where thermal dissipation justifies larger package

Compared with SMAJ75A-E3/61 and 1.5SMC75A, P6SMB75AHE3/5B uniquely balances AEC-Q101 qualification, 600 W pulse capability, and compact SMB footprint - making it optimal for new automotive and space-constrained industrial designs requiring validated reliability.

Availability

P6SMB75AHE3/5B is available at Aetrix Electronics and suitable for automotive body electronics, industrial sensor nodes, and telecom power input stages requiring stable component supply, full traceability, and lifecycle continuity.

Supply support for P6SMB75AHE3/5B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in high-reliability diodes, MOSFETs, and passive components for demanding industrial and automotive applications.

The P6SMB Series targets board-level transient protection in harsh environments, with design focus on AEC-Q101 qualification, low-profile surface-mount compatibility, and consistent clamping performance across temperature and lifetime.

FAQ

What is the clamping voltage of P6SMB75AHE3/5B at its rated peak pulse current?

The P6SMB75AHE3/5B has a maximum clamping voltage (VC) of 103 V at its specified peak pulse current (IPPM) of 5.8 A under the 10/1000 μs waveform condition. This value is measured per JEDEC standards and reflects the actual voltage imposed on protected circuitry during a worst-case transient event. The clamping occurs rapidly (<1 ns), limiting stress on downstream components such as MOSFETs or microcontrollers in systems using the P6SMB75AHE3/5B.

Is P6SMB75AHE3/5B suitable for automotive applications?

Yes, P6SMB75AHE3/5B is AEC-Q101 qualified, as indicated by the "HE3" suffix, and is specifically intended for automotive use. It meets stringent reliability requirements including temperature cycling, humidity testing, and mechanical shock validation. The device operates across −65 °C to +150 °C junction temperature range and is rated for under-hood environments. Engineers selecting P6SMB75AHE3/5B for automotive power distribution modules or ADAS sensor interfaces can rely on its certified qualification status and tested performance.

What does the "5B" in P6SMB75AHE3/5B signify?

The "5B" in P6SMB75AHE3/5B denotes the packaging configuration: 13-inch diameter plastic tape and reel, containing 3200 units per reel. This format supports high-volume automated SMT assembly and is distinct from the "52" variant (7-inch reel, 750 units). The "HE3" portion confirms RoHS-compliance and AEC-Q101 qualification, while "P6SMB75A" identifies the 75 V unidirectional TVS family member. All elements are manufacturer-defined ordering codes per Vishay's documentation.

How does P6SMB75AHE3/5B compare to bidirectional variants like P6SMB75CA?

P6SMB75AHE3/5B is unidirectional, with polarity marked by a cathode band and intended for DC line protection where current flows in one direction. In contrast, P6SMB75CA is bidirectional, offering symmetrical clamping for AC or floating signal lines. The unidirectional P6SMB75AHE3/5B provides lower leakage (<1.0 μA at 64.1 V) and tighter VBR tolerance versus bidirectional types, making it preferable for regulated DC rails. Selection depends on circuit topology - P6SMB75AHE3/5B is correct for VBAT-to-ground protection, while P6SMB75CA suits differential signal pairs.

What is the thermal resistance of P6SMB75AHE3/5B, and how does it affect layout?

P6SMB75AHE3/5B has a typical junction-to-ambient thermal resistance (RθJA) of 100 °C/W and junction-to-lead resistance (RθJL) of 20 °C/W, measured on 0.2" × 0.2" copper pads per terminal. This means that under 5.8 A transient current, self-heating remains manageable without heatsinking - but sustained power dissipation must stay below 5.0 W (PD). Layout best practice requires adhering to Vishay's recommended pad dimensions (0.086" × 0.060") to ensure specified thermal performance and avoid derating penalties in the P6SMB75AHE3/5B design-in.

P6SMB75AHE3/5B Specifications

Product attributes
Attribute value
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package/Case:
DO-214AA, SMB
Series:
P6SMB, TransZorb®
Packaging:
Tape & Reel (TR)
Product Status:
Discontinued at Digi-Key
Type:
Zener
Unidirectional Channels:
1
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
64.1V
Voltage - Breakdown (Min):
71.3V
Voltage - Clamping (Max) @ Ipp:
103V
Current - Peak Pulse (10/1000µs):
5.8A
Power - Peak Pulse:
600W
Power Line Protection:
No
Applications:
-
Capacitance @ Frequency:
-
Operating Temperature:
-65°C ~ 150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
DO-214AA (SMB)

P6SMB75AHE3/5B FAQ

1.How can I place an order for P6SMB75AHE3/5B through Aetrix?

Please submit a Request for Quotation (RFQ) for P6SMB75AHE3/5B on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for P6SMB75AHE3/5B reliable?

The price and inventory of P6SMB75AHE3/5B are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for P6SMB75AHE3/5B is usually 5 days.

3.What payment methods are accepted for P6SMB75AHE3/5B?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for P6SMB75AHE3/5B transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for P6SMB75AHE3/5B?

P6SMB75AHE3/5B orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your P6SMB75AHE3/5B order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for P6SMB75AHE3/5B?

For technical support, including P6SMB75AHE3/5B datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your P6SMB75AHE3/5B requirements.

6.How does Aetrix verify that P6SMB75AHE3/5B is sourced from the original manufacturer or authorized distributors?

All P6SMB75AHE3/5B products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that P6SMB75AHE3/5B meets industry standards.

7.What is the process for return or replacement of P6SMB75AHE3/5B?

All P6SMB75AHE3/5B units undergo pre-shipment inspection (PSI). If there is an issue with P6SMB75AHE3/5B, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The P6SMB75AHE3/5B part is unused and in its original packaging.

Return procedure for P6SMB75AHE3/5B:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

P6SMB75AHE3/5B Tags

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