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Vishay General Semiconductor - Diodes Division P6SMB75AHE3_A/I
- Part No.:
- P6SMB75AHE3_A/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
P6SMB75AHE3_A/I.pdf
- Description:
- TVS DIODE 64.1VWM 103VC DO214AA
- Quantity:
- Payment:
- Shipping:
Inventory:3,626
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Product details
Overview
P6SMB75AHE3_A/I from Vishay General Semiconductor is a unidirectional surface-mount Transient Voltage Suppressor (TVS) diode in SMB (DO-214AA) package, designed for clamping voltage transients on power and signal lines. It features a 75 V standoff voltage (VWM), 78.8 V maximum breakdown voltage (VBR), 103 V clamping voltage (VC) at 5.8 A peak pulse current (IPPM), and 600 W peak pulse power (PPPM) with 10/1000 μs waveform - used to protect MOSFETs, ICs, and sensor interfaces in automotive and industrial power supplies.
For engineers reviewing the P6SMB75AHE3_A/I datasheet, P6SMB75AHE3_A/I pinout, P6SMB75AHE3_A/I application, or P6SMB75AHE3_A/I equivalent, key selection criteria include clamping voltage margin relative to system rail, thermal resistance (RθJA = 100 °C/W), AEC-Q101 qualification status, unidirectional polarity marking, and compatibility with automated SMT placement on 5.0 mm × 5.0 mm copper pads.
Technical Context
This TVS diode operates as a voltage-clamping protection device that enters avalanche conduction when reverse voltage exceeds its breakdown threshold (VBR = 71.3–78.8 V). Its low incremental surge resistance ensures minimal voltage overshoot during transient events, while glass-passivated junction construction guarantees stable performance under repetitive surges.
Designed for unidirectional operation, it uses cathode-band polarity identification and meets J-STD-020 MSL Level 1 (peak reflow ≤ 260 °C). The device sustains 100 A non-repetitive forward surge current (IFSM) and operates across -65 °C to +150 °C junction temperature range, supporting robust deployment in engine control units and industrial motor drives.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM (Stand-off Voltage) | 64.1 V - Maximum continuous reverse operating voltage before clamping begins; defines safe DC/AC working limit for protected line. |
| VBR (Breakdown Voltage) | 71.3–78.8 V at 1 mA test current - Voltage at which avalanche conduction initiates; determines minimum overvoltage trip point. |
| VC (Clamping Voltage) | 103 V at 5.8 A IPPM - Peak voltage seen by downstream circuit during 10/1000 μs transient; critical for ensuring IC survival. |
| PPPM (Peak Pulse Power) | 600 W - Maximum transient energy absorption capability with 10/1000 μs waveform; enables protection against IEC 61000-4-5 Level 4 surges. |
| RθJA | 100 °C/W - Junction-to-ambient thermal resistance on standard 0.2" × 0.2" copper pads; informs derating requirements above 25 °C ambient. |
| TJ max. | +150 °C - Maximum allowable junction temperature; supports operation in under-hood automotive environments. |
| AEC-Q101 Qualified | Yes - Validated for automotive-grade reliability per stress test requirements including HTOL, TCT, and ESD; designated by HE3 suffix. |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, matte tin-plated leads, RoHS-compliant and halogen-free (per HM3/HE3 designation), UL 94 V-0 molding compound.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Cathode (banded end) | Reverse-biased avalanche terminal | Connected to protected line; conducts during overvoltage to clamp to VC; polarity must match system ground reference. |
| Anode | Reference/ground return path | Typically tied to system ground or low-impedance return plane; completes clamping current path during transient event. |
Key Features
| Feature | Design Value |
|---|---|
| 600 W peak pulse power (10/1000 μs) | Enables compliance with IEC 61000-4-5 surge immunity up to 4 kV (line-earth) in properly laid out PCBs with adequate copper area. |
| AEC-Q101 qualified (HE3 suffix) | Validated for automotive applications including engine control, body electronics, and ADAS sensors requiring long-term field reliability. |
| Glass passivated junction | Provides stable leakage current (< 1 μA at VWM) and consistent VBR over temperature and lifetime, reducing false triggering risk. |
| Low profile SMB package | 0.130" × 0.155" footprint supports high-density layouts; compatible with standard SMT pick-and-place equipment and reflow profiles. |
| MSL Level 1 moisture sensitivity | Allows unlimited floor life before reflow; eliminates baking requirement and simplifies manufacturing logistics. |
Applications
| Automotive Power Rail Protection | Industrial Sensor Interface Protection |
|---|---|
Use Scenario: Protecting 12 V battery-fed microcontroller power inputs in engine control modules from load dump and alternator transients. IC Role / Device Role / Timing Role: Unidirectional clamping TVS placed between VCC and GND, triggered within < 1 ns to limit voltage excursion below 103 V. Use Value: Prevents latch-up or permanent damage to 3.3 V/5 V logic rails during ISO 7637-2 Pulse 5a (load dump) events up to 65 V peak. |
Use Scenario: Safeguarding analog output lines of pressure/temperature sensors connected to PLC analog input cards. IC Role / Device Role / Timing Role: Reverse-biased TVS on 4–20 mA loop or 0–10 V signal line, absorbing induced lightning surges on factory floor wiring. Use Value: Maintains signal integrity by clamping transients to ≤103 V while adding < 0.5 pF capacitance - negligible impact on 1 kHz bandwidth signals. |
| DC-DC Converter Input Protection | Motor Drive Gate Driver Protection |
Use Scenario: Shielding buck converter input stage from back-EMF spikes generated by relay switching or cable disconnect events. IC Role / Device Role / Timing Role: TVS placed upstream of input capacitor, conducting only during >64.1 V excursions to shunt energy into ground plane. Use Value: Limits input voltage overshoot to 103 V, preventing overstress of 80 V-rated input MOSFETs and bulk capacitors. |
Use Scenario: Protecting high-side gate driver ICs from Miller-induced voltage spikes during fast IGBT/MOSFET switching in HVAC inverters. IC Role / Device Role / Timing Role: Clamping diode across gate-source terminals or supply rail, activated within sub-nanosecond to suppress dv/dt-induced turn-on. Use Value: Ensures gate voltage remains within ±20 V absolute maximum rating despite 100 V/ns edge rates, avoiding unintended conduction. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ75A-E3/5B | Same SMB package, 75 V VWM, but lower PPPM (400 W), higher VC (121 V), no AEC-Q101 qualification. | Limited to commercial-grade industrial or consumer applications; not suitable for automotive under-hood use. | Select when cost is prioritized over automotive qualification and surge margin is sufficient for IEC 61000-4-5 Level 2. |
| 1.5SMC75A-Q | Same VWM/VC specs, but larger SMC (DO-214AB) package (0.205" × 0.130"), higher RθJA (70 °C/W), AEC-Q101 qualified. | Requires more PCB area; better thermal performance allows higher duty-cycle surge handling in space-constrained designs. | Choose when board layout permits larger footprint and enhanced thermal management is needed for repetitive surge environments. |
Compared with SMAJ75A-E3/5B, P6SMB75AHE3_A/I delivers 50 % higher surge power rating and automotive qualification; versus 1.5SMC75A-Q, it saves 30 % board area while trading 30 °C/W higher thermal resistance - optimal for single-event protection in compact automotive ECUs.
Availability
P6SMB75AHE3_A/I is available at Aetrix Electronics and suitable for automotive power rail protection, industrial sensor interface hardening, and DC-DC converter input safeguarding requiring stable component supply with full traceability and long-term lifecycle support.
Supply support for P6SMB75AHE3_A/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability, efficiency, and application-specific optimization.
The P6SMB Series targets high-energy transient suppression in automotive, industrial, and telecom systems where AEC-Q101 qualification, low clamping voltage, and automated assembly compatibility are mandatory design requirements.
FAQ
What is the clamping voltage of P6SMB75AHE3_A/I at its rated peak pulse current?
The P6SMB75AHE3_A/I has a maximum clamping voltage (VC) of 103 V when subjected to its specified peak pulse current (IPPM) of 5.8 A using the standard 10/1000 μs waveform. This value is measured under defined test conditions per JEDEC standards and represents the highest voltage the protected circuit will experience during such a transient event. Designers must ensure downstream components have voltage ratings exceeding this clamping level to guarantee robust protection.
Is P6SMB75AHE3_A/I suitable for automotive applications?
Yes, P6SMB75AHE3_A/I is AEC-Q101 qualified, as indicated by the "HE3" suffix and documented in Vishay's official specifications. It undergoes rigorous stress testing including high-temperature operating life, temperature cycling, and ESD verification - making it appropriate for under-hood and chassis-mounted automotive electronics such as body control modules, lighting drivers, and sensor signal conditioning circuits where reliability under harsh environmental conditions is essential.
How does the SMB package of P6SMB75AHE3_A/I compare to SMA or SMC in terms of thermal performance?
The SMB (DO-214AA) package used in P6SMB75AHE3_A/I has a typical junction-to-ambient thermal resistance (RθJA) of 100 °C/W on standard 0.2" × 0.2" copper pads, which is higher than SMC (DO-214AB, ~70 °C/W) but lower than SMA (DO-214AC, ~125 °C/W). This means P6SMB75AHE3_A/I offers a balanced trade-off between compact size and thermal capability - sufficient for single-pulse surge events but requiring careful layout for repetitive surges. Its small footprint supports high-density automotive PCBs where space is constrained.
What is the meaning of the "_A/I" suffix in P6SMB75AHE3_A/I?
The "_A/I" suffix in P6SMB75AHE3_A/I denotes packaging configuration: "A" indicates tape-and-reel format per Vishay's ordering convention, and "I" specifies a 13-inch diameter reel containing 3200 units. This format is optimized for high-volume automated SMT assembly lines. The base "HE3" confirms RoHS-compliance and AEC-Q101 qualification, while the full suffix ensures traceability to exact reel-level logistics and manufacturing batch data required by Tier 1 automotive suppliers.
Can P6SMB75AHE3_A/I be used in bidirectional configurations?
No, P6SMB75AHE3_A/I is a unidirectional TVS diode, as confirmed by its part number structure (ending in "A", not "CA") and electrical specifications listing only VWM and VBR for unidirectional operation. Bidirectional variants in the same series carry the "CA" suffix (e.g., P6SMB75CA). Using P6SMB75AHE3_A/I in a bidirectional application would leave positive-going transients unprotected; designers requiring symmetrical clamping must select the corresponding CA version or implement dual unidirectional devices in series-opposing configuration.
P6SMB75AHE3_A/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- P6SMB, TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 64.1V
- Voltage - Breakdown (Min):
- 71.3V
- Voltage - Clamping (Max) @ Ipp:
- 103V
- Current - Peak Pulse (10/1000µs):
- 5.8A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -65°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMB)
P6SMB75AHE3_A/I FAQ
1.How can I place an order for P6SMB75AHE3_A/I through Aetrix?
Please submit a Request for Quotation (RFQ) for P6SMB75AHE3_A/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for P6SMB75AHE3_A/I reliable?
The price and inventory of P6SMB75AHE3_A/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for P6SMB75AHE3_A/I is usually 5 days.
3.What payment methods are accepted for P6SMB75AHE3_A/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for P6SMB75AHE3_A/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for P6SMB75AHE3_A/I?
P6SMB75AHE3_A/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your P6SMB75AHE3_A/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for P6SMB75AHE3_A/I?
For technical support, including P6SMB75AHE3_A/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your P6SMB75AHE3_A/I requirements.
6.How does Aetrix verify that P6SMB75AHE3_A/I is sourced from the original manufacturer or authorized distributors?
All P6SMB75AHE3_A/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that P6SMB75AHE3_A/I meets industry standards.
7.What is the process for return or replacement of P6SMB75AHE3_A/I?
All P6SMB75AHE3_A/I units undergo pre-shipment inspection (PSI). If there is an issue with P6SMB75AHE3_A/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The P6SMB75AHE3_A/I part is unused and in its original packaging.
Return procedure for P6SMB75AHE3_A/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
P6SMB75AHE3_A/I Tags
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Diodes Incorporated
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