My Inquiry
My Account
Vishay General Semiconductor - Diodes Division P6SMB75AHM3_B/H
- Part No.:
- P6SMB75AHM3_B/H
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
P6SMB75AHM3_B/H.pdf
- Description:
- 600W,75V 5%,UNIDIR,SMB TVS
- Quantity:
- Payment:
- Shipping:
Inventory:4,679
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
P6SMB75AHM3_B/H from Vishay General Semiconductor is a unidirectional surface-mount Transient Voltage Suppressor (TVS) diode in SMB (DO-214AA) package, rated for 75 V breakdown voltage (VBR = 71.3–78.8 V at IT = 1.0 mA), 103 V maximum clamping voltage (VC) at 5.8 A peak pulse current (IPPM), and 600 W peak pulse power (10/1000 µs waveform). It protects sensitive ICs and MOSFETs against inductive switching transients and ESD in automotive and industrial power rails.
For engineers reviewing the P6SMB75AHM3_B/H datasheet, P6SMB75AHM3_B/H pinout, P6SMB75AHM3_B/H application, or P6SMB75AHM3_B/H equivalent, key selection criteria include clamping voltage margin relative to protected circuit's absolute maximum rating, thermal derating above 25 °C ambient, unidirectional polarity alignment with DC bias, and AEC-Q101 qualification status for automotive use cases.
Technical Context
This device operates as a voltage-clamping surge protector: under normal conditions it presents high impedance (>1 µA leakage at 64.1 V stand-off), but conducts heavily when reverse voltage exceeds its breakdown threshold, limiting transient energy via low incremental surge resistance. Its glass-passivated junction ensures stable VBR tolerance (±5%) and fast response (<1 ns).
Designed for surface-mount assembly on 0.2" × 0.2" copper pads, it delivers 600 W peak pulse power with 0.01% duty cycle, and supports repetitive surge events only when thermally managed-junction temperature must remain ≤150 °C, with RθJA = 100 °C/W in still air.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VBR (min/max) | 71.3 V / 78.8 V at 1.0 mA test current - defines precise conduction onset window for reliable overvoltage triggering |
| VWM | 64.1 V - maximum continuous reverse operating voltage before significant leakage begins |
| VC @ IPPM | 103 V at 5.8 A - clamped voltage seen by protected circuit during worst-case 10/1000 µs surge |
| PPPM | 600 W - peak transient power dissipation capability without failure under standardized waveform |
| IFSM | 100 A - non-repetitive forward surge current rating (8.3 ms half-sine), relevant for fault-current limiting |
| TJ max. | 150 °C - maximum junction temperature limit; requires thermal design to avoid derating below 600 W at elevated ambient |
| Package | SMB (DO-214AA) - industry-standard 2-pin SMD outline with 2.2 mm height, compatible with automated pick-and-place |
Pinout & Package
Package: SMB (DO-214AA), molded plastic case with matte tin-plated leads, UL 94 V-0 rated, MSL Level 1 (260 °C reflow peak).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Cathode (banded end) | Transient current sink | Connected to protected line; conducts surge current to ground when voltage exceeds VBR |
| Anode | Reference/ground return | Typically tied to system ground or low-impedance return path; completes clamping loop |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive applications including engine control units and body electronics per stress test requirements |
| 600 W peak pulse power | Withstands high-energy transients such as ISO 7637-2 Pulse 1/2a/5a without degradation when properly mounted |
| Low clamping ratio (VC/VBR ≈ 1.37) | Minimizes overvoltage stress on downstream components compared to higher-ratio TVS devices |
| Halogen-free & RoHS-compliant | Meets environmental compliance mandates for industrial and consumer electronics manufacturing |
| MSL Level 1 rating | Enables standard reflow soldering without pre-baking, reducing production complexity and cost |
Applications
| Automotive Power Rail Protection | Industrial Sensor Interface Protection |
|---|---|
Use Scenario: Protecting 12 V battery-fed ECUs from load-dump and alternator ripple transients per ISO 16750-2. IC Role / Device Role / Timing Role: Unidirectional TVS placed between power input and ground, clamping surges within 1 ns. Use Value: Limits voltage to ≤103 V during 600 W pulses, preventing damage to 36 V-rated DC-DC converters and microcontrollers. | Use Scenario: Shielding analog sensor signal lines (e.g., pressure, temperature) from ESD and cable discharge events. IC Role / Device Role / Timing Role: Low-capacitance TVS (CJ < 100 pF typical) shunted across differential pair or single-ended output. Use Value: Clamps ±8 kV contact ESD (IEC 61000-4-2) to safe levels while preserving signal integrity up to 1 MHz bandwidth. |
| Consumer Power Adapter Input Stage | Telecom DC Power Feeding Protection |
Use Scenario: Safeguarding AC/DC adapter primary-side rectifier and controller ICs from lightning-induced surges on mains input. IC Role / Device Role / Timing Role: Primary-side TVS connected across bulk capacitor, triggered by fast-rising line transients. Use Value: Absorbs 600 W surges without thermal runaway, enabling compact board layout with no heatsink required. | Use Scenario: Protecting PoE-powered equipment (e.g., IP cameras) from induced surges on 48 V DC feed lines. IC Role / Device Role / Timing Role: Unidirectional TVS installed at PD input, referenced to local ground plane. Use Value: Maintains 64.1 V working voltage margin above nominal 48 V, ensuring no false triggering during normal operation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ75A-E3/5B | Same VBR range (71.3–78.8 V), lower PPPM = 400 W, SMA package (smaller footprint, higher RθJA) | Not AEC-Q101 qualified; suitable for commercial-grade consumer products only | Select when board space is constrained and surge energy is ≤400 W; verify thermal performance with smaller pad area |
| 1.5SMC75A-H | Same electrical specs, but SMC (DO-214AB) package - larger body, lower RθJA = 60 °C/W, higher IPPM = 6.5 A | Preferred for high-reliability industrial systems requiring enhanced thermal robustness and higher surge margin | Choose when sustained surge repetition or elevated ambient temperatures demand better heat dissipation |
Compared with P6SMB75AHM3_B/H, SMAJ75A-E3/5B offers space savings but reduced surge handling and automotive qualification, while 1.5SMC75A-H provides superior thermal performance and higher peak current capacity at the cost of larger PCB footprint.
Availability
P6SMB75AHM3_B/H is available at Aetrix Electronics and suitable for automotive electronic control units, industrial sensor interfaces, consumer power adapters, and telecom DC feeding circuits requiring stable component supply with AEC-Q101 assurance and halogen-free compliance.
Supply support for P6SMB75AHM3_B/H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, MOSFETs, optoelectronics, and passive components with emphasis on reliability and application-specific performance.
The P6SMB Series targets high-energy transient protection in space-constrained, high-volume applications-designed specifically for automotive, industrial, and telecom systems where AEC-Q101 qualification, consistent clamping behavior, and automated assembly compatibility are mandatory.
FAQ
What is the breakdown voltage tolerance for P6SMB75AHM3_B/H?
The P6SMB75AHM3_B/H has a specified breakdown voltage range of 71.3 V to 78.8 V at 1.0 mA test current, corresponding to a ±5% tolerance around the nominal 75 V rating. This tight VBR distribution ensures predictable clamping onset across production lots and supports robust design margins in automotive and industrial applications where overvoltage thresholds must be precisely controlled. The P6SMB75AHM3_B/H datasheet confirms this range under "ELECTRICAL CHARACTERISTICS" table.
Is P6SMB75AHM3_B/H suitable for bidirectional transient protection?
No, P6SMB75AHM3_B/H is a unidirectional TVS diode, indicated by the "A" suffix and cathode band marking. It conducts only in reverse bias and must be oriented with cathode toward the protected line. For bidirectional protection, Vishay offers the P6SMB75CA variant. Using P6SMB75AHM3_B/H in AC or floating signal paths without proper DC biasing will result in unintended forward conduction and potential failure. Always verify polarity alignment in schematic and layout for P6SMB75AHM3_B/H.
Does P6SMB75AHM3_B/H meet AEC-Q101 requirements?
Yes, P6SMB75AHM3_B/H is AEC-Q101 qualified, as confirmed by the "_B/H" suffix in the ordering code and documentation in the Vishay P6SMB datasheet (Rev. 09-Jan-2024, Note 1 on page 3). This qualification covers stress tests including HTGB, HTRB, TCT, and ESD, validating suitability for automotive under-hood and cabin applications. The "HM3" prefix denotes halogen-free, RoHS-compliant construction, and "B" indicates AEC-Q101 qualification level for the 6.8 V to 220 V voltage range.
What is the maximum clamping voltage of P6SMB75AHM3_B/H at rated peak pulse current?
The maximum clamping voltage (VC) of P6SMB75AHM3_B/H is 103 V at 5.8 A peak pulse current (IPPM) under the standard 10/1000 µs waveform. This value represents the upper limit of voltage imposed on the protected circuit during worst-case surge events and is critical for verifying margin against downstream component absolute maximum ratings. The P6SMB75AHM3_B/H achieves this with a clamping ratio of approximately 1.37 (103 V / 75 V nominal), indicating efficient energy diversion.
Can P6SMB75AHM3_B/H be used in place of P6SMB75A-E3/52?
P6SMB75AHM3_B/H is not a direct drop-in replacement for P6SMB75A-E3/52 due to differences in qualification and packaging: P6SMB75AHM3_B/H is AEC-Q101 qualified and halogen-free (HM3), whereas P6SMB75A-E3/52 is commercial-grade, RoHS-compliant but not automotive-qualified (E3). Electrically they share identical VBR, VC, and PPPM, but P6SMB75AHM3_B/H requires validation for automotive use cases where E3 variants are insufficient. Always confirm qualification requirements before substitution.
P6SMB75AHM3_B/H Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- P6SMB, TransZorb®
- Packaging:
- Bulk
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 64.1V
- Voltage - Breakdown (Min):
- 71.3V
- Voltage - Clamping (Max) @ Ipp:
- 103V
- Current - Peak Pulse (10/1000µs):
- 5.8A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- Telecom
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -65°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMB)
P6SMB75AHM3_B/H FAQ
1.How can I place an order for P6SMB75AHM3_B/H through Aetrix?
Please submit a Request for Quotation (RFQ) for P6SMB75AHM3_B/H on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for P6SMB75AHM3_B/H reliable?
The price and inventory of P6SMB75AHM3_B/H are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for P6SMB75AHM3_B/H is usually 5 days.
3.What payment methods are accepted for P6SMB75AHM3_B/H?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for P6SMB75AHM3_B/H transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for P6SMB75AHM3_B/H?
P6SMB75AHM3_B/H orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your P6SMB75AHM3_B/H order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for P6SMB75AHM3_B/H?
For technical support, including P6SMB75AHM3_B/H datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your P6SMB75AHM3_B/H requirements.
6.How does Aetrix verify that P6SMB75AHM3_B/H is sourced from the original manufacturer or authorized distributors?
All P6SMB75AHM3_B/H products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that P6SMB75AHM3_B/H meets industry standards.
7.What is the process for return or replacement of P6SMB75AHM3_B/H?
All P6SMB75AHM3_B/H units undergo pre-shipment inspection (PSI). If there is an issue with P6SMB75AHM3_B/H, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The P6SMB75AHM3_B/H part is unused and in its original packaging.
Return procedure for P6SMB75AHM3_B/H:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
P6SMB75AHM3_B/H Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
